SMD Type MOSFET - kexin.com.cn (KDT2955).pdf · SMD Type 2 MOSFET r P-Channel MOSFET NDT2955 (KDT2955) Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ

SMD Type

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MOSFET

P-Channel MOSFETNDT2955 (KDT2955)

■ Features ● VDS (V) =-60V

● ID =-2.5 A (VGS =-10V)

● RDS(ON) ＜ 300mΩ (VGS =-10V)

● RDS(ON) ＜ 500mΩ (VGS =-4.5V)

SG D

D

■ Absolute Maximum Ratings Ta = 25℃

Parameter Symbol Rating Unit

Drain-Source Voltage VDS -60

Gate-Source Voltage VGS ±20

Continuous Drain Current (Note.1) ID -2.5

Pulsed Drain Current IDM -15

(Note.1) 3

Power Dissipation (Note.2) 1.3

(Note.3) 1.1

Thermal Resistance.Junction- to-Ambient (Note.1) RthJA 42

Thermal Resistance.Junction- to-Case RthJC 12

Junction Temperature TJ 150

Junction Storage Temperature Range Tstg -55 to 150

PD W

V

℃/W

A

℃

Note.1: 42°C/W when mounted on a 1in pad of 2 oz copper

Note.2: 95°C/W when mounted on a .0066 in pad of 2 oz copper

Note.3: 110°C/W when mounted on a minimum pad.

2

2

1.80

(max

)

0.02

~ 0

.1

0.70±0.1

4.60 (typ)

10 。

7.0±

0.3

3.50

±0.2

6.50±0.2

3.00±0.1

2.30 (typ)

SOT-223 Unit:mm

4

1 2 3

0.250

Gauge Plane

1.Gate 2.Drain3.Source

4.Drain

SMD Type

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MOSFET

P-Channel MOSFETNDT2955 (KDT2955)

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit

Drain-Source Breakdown Voltage VDSS ID=-250μA, VGS=0V -60 V

Zero Gate Voltage Drain Current IDSS VDS=-60V, VGS=0V -10 uA

Gate-Body leakage current IGSS VDS=0V, VGS=±20V ±100 nA

Gate Threshold Voltage VGS(th) VDS=VGS ID=-250μA -2 -4 V

VGS=-10V, ID=-2.5A 300

VGS=-4.5V, ID=-2A 500

VGS=-10V, ID=-2.5A TJ=125℃ 513

On state drain current ID(ON) VGS=-10V, VDS=-5V -12 A

Forward Transconductance gFS VDS=-10V, ID=-2.5A 5.5 S

Input Capacitance Ciss 601

Output Capacitance Coss 85

Reverse Transfer Capacitance Crss 35

Total Gate Charge Qg 11 15

Gate Source Charge Qgs 2.4

Gate Drain Charge Qgd 2.7

Turn-On DelayTime td(on) 12 21

Turn-On Rise Time tr 10 20

Turn-Off DelayTime td(off) 19 34

Turn-Off Fall Time tf 6 12

Body Diode Reverse Recovery Time trr 25

Body Diode Reverse Recovery Charge Qrr 40 nC

Drain-Source Avalanche Energy WDSS Single Pulse, VDD = 30 V, ID = 2.5 A 174 mJ

Maximum Body-Diode Continuous Current IS -2.5 A

Diode Forward Voltage VSD IS=-2.5A,VGS=0V (Note.1) -1.2 V

ns

mΩ

VGS=-10V, VDS=-30V, ID=-1A,RG=6Ω(Note.1)

RDS(On) Static Drain-Source On-Resistance

IF=-2.5A, dI/dt=100A/μs

VGS=0V, VDS=-30V, f=1MHz

VGS=-10V, VDS=-30V, ID=-2.5A (Note.1)

pF

nC

Note.1: Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%

■ Marking

Marking * DT2955

SMD Type

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MOSFET

P-Channel MOSFETNDT2955 (KDT2955)

■ Typical Characterisitics

0

3

6

9

12

0 1 2 3 4 5

-VDS, DRAIN TO SOURCE VOLTAGE (V)

-I D, D

RA

IN C

UR

REN

T (A

)

VGS = -10V

-7.0V

-4.0V

-4.5V

-5.0V

-6.0V

0.8

1

1.2

1.4

1.6

1.8

2

0 3 6 9 12-ID, DRAIN CURRENT (A)

RD

S(O

N),

NO

RM

ALI

ZED

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E VGS=-4.5V

-5.0V

-6.0V -7.0V

-8.0V -10V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

RD

S(O

N),

NO

RM

ALI

ZED

DR

AIN

-SO

UR

CE

ON

-RES

ISTA

NC

E ID = -2.5AVGS = -10V

0.05

0.1

0.15

0.2

0.25

0.3

0.35

2 4 6 8 10

-VGS, GATE TO SOURCE VOLTAGE (V)

RD

S(O

N),

ON

-RES

ISTA

NC

E (O

HM

)

ID = -1.3A

TA = 125oC

TA = 25oC

Figure 3. On-Resistance Variation withTemperature.

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

0

2

4

6

8

10

2.5 3.5 4.5 5.5

-VGS, GATE TO SOURCE VOLTAGE (V)

-I D, D

RA

IN C

UR

REN

T (A

)

TA = -55oC 25oCVDS = -10V

125oC

0.0001

0.001

0.01

0.1

1

10

0 0.2 0.4 0.6 0.8 1 1.2-VSD, BODY DIODE FORWARD VOLTAGE (V)

-I S, R

EVER

SE D

RA

IN C

UR

REN

T (A

) VGS =0V

TA = 125oC

25oC

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

SMD Type

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MOSFET

.

P-Channel MOSFETNDT2955 (KDT2955)

■ Typical Characterisitics

0

2

4

6

8

10

0 3 6 9 12

Qg, GATE CHARGE (nC)

-VG

S, G

ATE

-SO

UR

CE

VOLT

AG

E (V

) ID = -2.5AVDS = -20V

-30V

-40V

0

200

400

600

800

0 15 30 45 60

-VDS, DRAIN TO SOURCE VOLTAGE (V)

CA

PAC

ITA

NC

E (p

F )

CISS

COSS

CRSS

f = 1 MHzVGS = 0 V

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

100

0.1 1 10 100

-VDS, DRAIN-SOURCE VOLTAGE (V)

-I D, D

RA

IN C

UR

REN

T (A

)

DC

1s100ms

100 s

RDS(ON) LIMIT

VGS = -10VSINGLE PULSER JA = 110oC/W

TA = 25oC

10ms1ms

10s

0

10

20

30

40

50

0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

P(pk

), PE

AK

TR

AN

SIEN

T PO

WER

(W) SINGLE PULSE

R JA = 110°C/WTA = 25°C

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10 100 1000t1, TIME (sec)

r(t),

NO

RM

ALI

ZED

EFF

ECTI

VE T

RA

NSI

ENT

THER

MA

L R

ESIS

TAN

CE

R JA(t) = r(t) * R JA

R JA = 110oC/W

TJ - TA = P * R JA(t)Duty Cycle, D = t1 / t2

P(pk)

t1t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.