-
10
14
18
22
26
30
34
38
42
46
50
0 2 4 6 8 10 12 14 16 18 20VGS - Gate-to- Source Voltage (V)
RD
S(o
n) -
On-
Sta
te R
esis
tanc
e (m
Ω) TC = 25°C, I D = 5A
TC = 125°C, I D = 5A
G001
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5Qg - Gate Charge (nC)
VG
S -
Gat
e-to
-Sou
rce
Vol
tage
(V
) ID = 5AVDS =15V
G001
1D
2
D
D
3
D
4
D 5
G
6
SS
P0108-01
Product
Folder
Sample &Buy
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Documents
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CSD17571Q2SLPS393A –OCTOBER 2013–REVISED JANUARY 2015
CSD17571Q2 30V N-Channel NexFET™ Power MOSFETs1 Features
Product Summary1• Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT•
Low Thermal Resistance VDS Drain-to-Source Voltage 30 V• Avalanche
Rated Qg Gate Charge Total (4.5 V) 2.4 nC
Qgd Gate Charge Gate-to-Drain 0.6 nC• Pb-Free Terminal
PlatingVGS = 4.5 V 24 mΩ• RoHS Compliant RDS(on) Drain-to-Source
On-ResistanceVGS = 10 V 20 mΩ• Halogen Free
VGS(th) Threshold Voltage 1.6 V• SON 2 mm × 2 mm Plastic
Package
Ordering Information(1)2 ApplicationsDevice Media Qty Package
Ship
• Optimized for Load Switch Applications SON 2 x 2 mm Tape
andCSD17571Q2 7-Inch Reel 3000 Plastic Package Reel• Storage,
Tablets, and Handheld Devices(1) For all available packages, see
the orderable addendum at• Optimized for Control FET
Applications
the end of the data sheet.
3 Description Absolute Maximum RatingsThis 30 V, 20 mΩ, SON 2×2
NexFET™ power
TA = 25°C VALUE UNITMOSFET is designed to minimize losses in
powerVDS Drain-to-Source Voltage 30 Vconversion and load management
applications, whileVGS Gate-to-Source Voltage ±20 Voffering
excellent thermal performance for the size of
Continuous Drain Current (Package Limit) 22 Athe package.
IDContinuous Drain Current(1) 7.6 A
Top View IDM Pulsed Drain Current, TA = 25°C(2) 39 APD Power
Dissipation(1) 2.5 W
TJ, Operating Junction and –55 to 150 °CTstg Storage Temperature
Range
Avalanche Energy, single pulseEAS 7.2 mJID = 12 A, L = 0.1 mH,
RG = 25 Ω
(1) RθJA = 50 on 1 in² Cu (2 oz.) on 0.060" thick FR4 PCB(2)
Pulse duration 10 μs, duty cycle ≤2%
RDS(on) vs VGS Gate Charge
1
An IMPORTANT NOTICE at the end of this data sheet addresses
availability, warranty, changes, use in safety-critical
applications,intellectual property matters and other important
disclaimers. PRODUCTION DATA.
http://www.ti.com/product/CSD17571Q2?dcmp=dsproject&hqs=pfhttp://www.ti.com/product/CSD17571Q2?dcmp=dsproject&hqs=sandbuysamplebuyhttp://www.ti.com/product/CSD17571Q2?dcmp=dsproject&hqs=tddoctype2http://www.ti.com/product/CSD17571Q2?dcmp=dsproject&hqs=swdesKithttp://www.ti.com/product/CSD17571Q2?dcmp=dsproject&hqs=supportcommunityhttp://www.ti.com/product/csd17571q2?qgpn=csd17571q2
-
CSD17571Q2SLPS393A –OCTOBER 2013–REVISED JANUARY 2015
www.ti.com
Table of Contents1 Features
..................................................................
1 6 Device and Documentation Support.................... 7
6.1 Trademarks
............................................................... 72
Applications
........................................................... 16.2
Electrostatic Discharge Caution................................ 73
Description
............................................................. 16.3
Glossary
....................................................................
74 Revision
History..................................................... 2
7 Mechanical, Packaging, and Orderable5
Specifications.........................................................
3Information
............................................................. 85.1
Electrical
Characteristics........................................... 37.1 Q2
Package Dimensions .......................................... 85.2
Thermal Information
.................................................. 37.2 Q2 Tape and
Reel Information................................ 105.3 Typical
MOSFET Characteristics.............................. 4
4 Revision History
Changes from Original (October 2013) to Revision A Page
• Updated Figure
#8..................................................................................................................................................................
6
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-
CSD17571Q2www.ti.com SLPS393A –OCTOBER 2013–REVISED JANUARY
2015
5 Specifications
5.1 Electrical CharacteristicsTA = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNITSTATIC
CHARACTERISTICSBVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA
30 VIDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 24 V 1
μAIGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100
nAVGS(th) Gate-to-Source Threshold Voltage VDS = VGS, IDS = 250 μA
1.3 1.6 2 V
VGS = 4.5 V, IDS = 5 A 24 29 mΩRDS(on) Drain-to-Source
On-Resistance VGS = 10 V, IDS = 5 A 20 24 mΩgƒs Transconductance
VDS = 15 V, IDS = 5 A 43 SDYNAMIC CHARACTERISTICSCISS Input
Capacitance 360 468 pFCOSS Output Capacitance VGS = 0 V, VDS = 15
V, ƒ = 1 MHz 101 131 pFCRSS Reverse Transfer Capacitance 9 12 pFRg
Series Gate Resistance 3.8 7.6 ΩQg Gate Charge Total (4.5 V) 2.4
3.1 nCQgd Gate Charge – Gate-to-Drain 0.6 nCVDS = 15 V, IDS = 5
AQgs Gate Charge Gate-to-Source 0.9 nCQg(th) Gate Charge at Vth 0.6
nCQOSS Output Charge VDS = 15 V, VGS = 0 V 3.4 nCtd(on) Turn On
Delay Time 5.3 nstr Rise Time 19 nsVDS = 15 V, VGS = 4.5 V, IDS = 5
A
RG = 2 Ωtd(off) Turn Off Delay Time 8 nstƒ Fall Time 2.6 nsDIODE
CHARACTERISTICSVSD Diode Forward Voltage IDS = 5 A, VGS = 0 V 0.8 1
VQrr Reverse Recovery Charge 2.3 nCVDD = 15 V, IF = 5 A, di/dt =
300 A/μstrr Reverse Recovery Time 11 ns
5.2 Thermal InformationTA = 25°C unless otherwise specified
THERMAL METRIC MIN TYP MAX UNITRθJC Junction-to-Case Thermal
Resistance (1) 6.2 °C/WRθJA Junction-to-Ambient Thermal Resistance
(1) (2) 65
(1) RθJC is determined with the device mounted on a 1 inch2
(6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inches × 1.5
inches(3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC
is specified by design, whereas RθJA is determined by the user’s
boarddesign.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2
oz. (0.071 mm thick) Cu.
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-
GATE Source
DRAIN
N-Chan
M0164-01
GATE Source
DRAIN
N-Chan
M0164-02
CSD17571Q2SLPS393A –OCTOBER 2013–REVISED JANUARY 2015
www.ti.com
Max RθJA = 65 when Max RθJA = 235 whenmounted on 1 inch2 mounted
on minimum(6.45 cm2) of 2 oz. pad area of 2 oz.(0.071 mm thick) Cu.
(0.071 mm thick) Cu.
5.3 Typical MOSFET CharacteristicsTA = 25°C unless otherwise
specified
Figure 1. Transient Thermal Impedance
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1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
−75 −25 25 75 125 175TC - Case Temperature (ºC)
VG
S(th
) - T
hres
hold
Vol
tage
(V
)
ID = 250uA
G001
10
14
18
22
26
30
34
38
42
46
50
0 2 4 6 8 10 12 14 16 18 20VGS - Gate-to- Source Voltage (V)
RD
S(o
n) -
On-
Sta
te R
esis
tanc
e (m
Ω) TC = 25°C, I D = 5A
TC = 125°C, I D = 5A
G001
0
1
2
3
4
5
6
7
8
9
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5Qg - Gate Charge (nC)
VG
S -
Gat
e-to
-Sou
rce
Vol
tage
(V
) ID = 5AVDS =15V
G001
1
10
100
1000
0 3 6 9 12 15 18 21 24 27 30VDS - Drain-to-Source Voltage
(V)
C −
Cap
acita
nce
(pF
)
Ciss = Cgd + CgsCoss = Cds + CgdCrss = Cgd
G001
0
5
10
15
20
25
30
35
40
45
50
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2VDS - Drain-to-Source
Voltage (V)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
VGS = 10VVGS = 6VVGS = 4.5V
G001
0
3
6
9
12
15
18
21
24
27
30
0 0.5 1 1.5 2 2.5 3 3.5 4VGS - Gate-to-Source Voltage (V)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A)
TC = 125°CTC = 25°CTC = −55°C
VDS = 5V
G001
CSD17571Q2www.ti.com SLPS393A –OCTOBER 2013–REVISED JANUARY
2015
Typical MOSFET Characteristics (continued)TA = 25°C unless
otherwise specified
Figure 2. Saturation Characteristics Figure 3. Transfer
Characteristics
Figure 4. Gate Charge Figure 5. Capacitance
Figure 6. Threshold Voltage vs Temperature Figure 7. On-State
Resistance vs Gate-to-Source Voltage
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-
0.0
3.0
6.0
9.0
12.0
15.0
18.0
21.0
24.0
27.0
30.0
−50 −25 0 25 50 75 100 125 150 175TA - AmbientTemperature
(ºC)
I DS -
Dra
in-
to-
Sou
rce
Cur
rent
(A
)
G001
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 50VDS - Drain-to-Source Voltage (V)
I DS -
Dra
in-t
o-S
ourc
e C
urre
nt (
A) 1ms
10ms100ms1s
DC
Single PulseTypical RthetaJA =190ºC/W(min Cu)
G001
0.1
1
10
100
0.01 0.1 1TAV - Time in Avalanche (mS)
I AV -
Pea
k A
vala
nche
Cur
rent
(A
) TC = 25ºCTC = 125ºC
G001
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
−75 −25 25 75 125 175TC - Case Temperature (ºC)
Nor
mal
ized
On-
Sta
te R
esis
tanc
e
VGS = 4.5VVGS = 10V
ID = 5A
G001
0.0001
0.001
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1VSD − Source-to-Drain Voltage (V)
I SD −
Sou
rce-
to-D
rain
Cur
rent
(A
) TC = 25°CTC = 125°C
G001
CSD17571Q2SLPS393A –OCTOBER 2013–REVISED JANUARY 2015
www.ti.com
Typical MOSFET Characteristics (continued)TA = 25°C unless
otherwise specified
Figure 8. Normalized On-State Resistance vs Temperature Figure
9. Typical Diode Forward Voltage
Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse
Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
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CSD17571Q2www.ti.com SLPS393A –OCTOBER 2013–REVISED JANUARY
2015
6 Device and Documentation Support
6.1 TrademarksNexFET is a trademark of Texas Instruments.All
other trademarks are the property of their respective owners.
6.2 Electrostatic Discharge CautionThese devices have limited
built-in ESD protection. The leads should be shorted together or
the device placed in conductive foamduring storage or handling to
prevent electrostatic damage to the MOS gates.
6.3 GlossarySLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and
definitions.
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M0165-01
D
1 13 3
4 46 6
b
E2
KL
A1
C
Top View
Bottom View
Front View
E
Pin 1 Dot Pin 1 IDe
D1
E1
K3K1
D2
K2
K4
A
E3
2
5
2
5
CSD17571Q2SLPS393A –OCTOBER 2013–REVISED JANUARY 2015
www.ti.com
7 Mechanical, Packaging, and Orderable InformationThe following
pages include mechanical, packaging, and orderable information.
This information is the mostcurrent data available for the
designated devices. This data is subject to change without notice
and revision ofthis document. For browser-based versions of this
data sheet, refer to the left-hand navigation.
7.1 Q2 Package Dimensions
DIM MILLIMETERS INCHESMIN NOM MAX MIN NOM MAX
A 0.700 0.750 0.800 0.028 0.030 0.032A1 0.000 0.050 0.000 0.002b
0.250 0.300 0.350 0.010 0.012 0.014C 0.203 TYP 0.008 TYPD 2.000 TYP
0.080 TYP
D1 0.900 0.950 1.000 0.036 0.038 0.040D2 0.300 TYP 0.012 TYPE
2.000 TYP 0.080 TYPE1 0.900 1.000 1.100 0.036 0.040 0.044E2 0.280
TYP 0.0112 TYPE3 0.470 TYP 0.0188 TYPe 0.650 BSC 0.026 TYPK 0.280
TYP 0.0112 TYPK1 0.350 TYP 0.014 TYPK2 0.200 TYP 0.008 TYPK3 0.200
TYP 0.008 TYPK4 0.470 TYP 0.0188 TYPL 0.200 0.25 0.300 0.008 0.010
0.012
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-
CSD17571Q2www.ti.com SLPS393A –OCTOBER 2013–REVISED JANUARY
2015
7.1.1 Recommended PCB Pattern
For recommended circuit layout for PCB designs, see application
note SLPA005 – Reducing Ringing ThroughPCB Layout Techniques.
7.1.2 Recommended Stencil Pattern
Note: All dimensions are in mm, unless otherwise specified.
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-
2.00 ±0.05 Ø 1.50 ±0.10
1.7
5 ±
0.1
0
Ø 1.00 ±0.25
M0168-01
8.0
0+
0.3
0
–0.1
0
4.00 ±0.10
4.00 ±0.10
3.5
0 ±
0.0
5
10° Max
10° Max
0.254 ±0.021.00 ±0.05
2.30 ±0.05
2.3
0 ±
0.0
5
CSD17571Q2SLPS393A –OCTOBER 2013–REVISED JANUARY 2015
www.ti.com
7.2 Q2 Tape and Reel Information
Notes: 1. Measured from centerline of sprocket hole to
centerline of pocket2. Cumulative tolerance of 10 sprocket holes is
±0.203. Other material available4. Typical SR of form tape Max 109
OHM/SQ5. All dimensions are in mm, unless otherwise specified.
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-
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status(1)
Package Type PackageDrawing
Pins PackageQty
Eco Plan(2)
Lead finish/Ball material
(6)
MSL Peak Temp(3)
Op Temp (°C) Device Marking(4/5)
Samples
CSD17571Q2 ACTIVE WSON DQK 6 3000 RoHS & Green NIPDAU | SN
Level-1-260C-UNLIM -55 to 150 1751
(1) The marketing status values are defined as follows:ACTIVE:
Product device recommended for new designs.LIFEBUY: TI has
announced that the device will be discontinued, and a lifetime-buy
period is in effect.NRND: Not recommended for new designs. Device
is in production to support existing customers, but TI does not
recommend using this part in a new design.PREVIEW: Device has been
announced but is not in production. Samples may or may not be
available.OBSOLETE: TI has discontinued the production of the
device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that
are compliant with the current EU RoHS requirements for all 10 RoHS
substances, including the requirement that RoHS substancedo not
exceed 0.1% by weight in homogeneous materials. Where designed to
be soldered at high temperatures, "RoHS" products are suitable for
use in specified lead-free processes. TI mayreference these types
of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to
mean products that contain lead but are compliant with EU RoHS
pursuant to a specific EU RoHS exemption.Green: TI defines "Green"
to mean the content of Chlorine (Cl) and Bromine (Br) based flame
retardants meet JS709B low halogen requirements of
-
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Incorporated
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1 Features2 Applications3 DescriptionTable of Contents4 Revision
History5 Specifications5.1 Electrical Characteristics5.2 Thermal
Information5.3 Typical MOSFET Characteristics
6 Device and Documentation
Support6.1 Trademarks6.2 Electrostatic Discharge
Caution6.3 Glossary
7 Mechanical, Packaging, and Orderable Information7.1 Q2 Package
Dimensions7.1.1 Recommended PCB Pattern7.1.2 Recommended Stencil
Pattern
7.2 Q2 Tape and Reel Information