Slide 1 V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, N. Parthasarathy, M. Seo, M. Urteaga, M. J. W. Rodwell , Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 L. Samoska, A. Fung, Jet Propulsion Labs, Pasadena, CA 91109 Common Base Amplifier with 7- dB gain at 176 GHz in InP mesa DHBT Technology
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Slide 1 V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom, N. Parthasarathy, M. Seo, M. Urteaga, M. J. W. Rodwell, Department of Electrical and Computer Engineering,
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Slide 1
V. Paidi, Z. Griffith, Y. Wei, M. Dahlstrom,
N. Parthasarathy, M. Seo, M. Urteaga,
M. J. W. Rodwell ,Department of Electrical and Computer Engineering,
University of California, Santa Barbara, CA 93106
L. Samoska, A. Fung,Jet Propulsion Labs, Pasadena, CA 91109
Common Base Amplifier with 7- dB gain at 176 GHz in
InP mesa DHBT Technology
Slide 2
Outline
• Motivation.
• Why Common-base?
• Effect of layout parasitics on circuit stability and MSG.
• InP mesa DHBT process.
• Circuit simulations.
• Device Results
• G-band Power amplifier results.
• W-band Power amplifier results.
Slide 3
Motivation and Previous Results
• Applications for electronics in 140-220 GHz frequency band
Wideband communication systems Atmospheric sensing Automotive radar
• Small signal amplifier results
6.3 dB @ 175 GHz single stage amplifier in InP TSHBT technology, Miguel et.al.,12 dB @ 170 GHz three stage CE amplifier in InP TSHBT technology, Miguel et. al., 6-stage amplifier with 20 6 dB from 150-215 GHz, InP HEMT, Weinreb et. al.
• Power amplifier results 14-16 dBm @140-170 GHz with 10 dB gain in InP HEMT technology, Lorene et. al., 12.5 dBm @90 GHz with 8.6 dB gain in TS InP DHBT technology, Yun et. al., 14-16 dBm @65-145 GHz with > 10 dB gain in InP HEMT technology, Lorene et. al.,
Slide 4
Why mesa -InP HBTs for 140- 220 GHz power amplifiers ?
• fmax > 400 GHz, ft > 250 GHz
• High current density > 3 mA/ m2.
• Vbr,ce0 > 6V
• Low thermal resistance.
High power density, high gain in 140-220-GHz frequency range
Slide 5
Why Common Base ?
RL
InputMatchingnetworkVin Vout
OutputLoadlineMatchingnetwork
Common Base Circuit Schematic
0
5
10
15
20
25
30
10 100
MS
G/M
AG
, dB
Frequency, GHz
Common base
Common Collector
Common emitter
U
Common base has the highest MSG/MAG.
Slide 6
Base inductance
• 0.8 m base contact width Leads to base access inductance.
• Lb ~ 3 pH for 0.8 mX12 m HBT.
Longer finger length results in larger base access inductance