SIMS: Secondary Ion Mass Spectroscopy Principle Secondary Chamber (sample loading) Primary Chamber (target) Ion source O2+, Cs+ Ion gun DeltaV=5KV Magnetic Arm Wire Chamber V=6KV V=5KV
Dec 26, 2015
SIMS: Secondary Ion Mass Spectroscopy
Principle
Secondary Chamber(sample loading)
Primary Chamber(target)
Ion sourceO2+, Cs+
Ion gunDeltaV=5KV
Magnetic Arm
Wire Chamber
V=6KV
V=5KV
The beam is scanning (and escavating) the sample
200-250 um
0.5-2 um
Measured with AFM
Restricted region analyzed(to avoid scattering from walls)
Readout is switched between Si, Al, B/P forevery point.
t
Counts (log scale)
Si (bulk), constant
B or P,As, decreasing as a function of time (depth)
t
Si (bulk), constant
B or P,As (implant), constantNIST control sample(B or P implant with constant density in silicon bulk)
time converted to depth by using the AFM measurement
Still waiting for n-in-n results...
n-in-p: pixel implant
n+ window (pixel): 3 points for each of the two samples
moderated p-spray
non-moderated p-spray
back contact
Still waiting for final n-in-n numbers
Reasonable values for pixel and high-low pspray
Something strange in the back metal(at least for the measurements done while I was here)
Contamination from the wet etching?
Next PPS meetings1) Mini PPS meeting (phone): 13 Dec 4pm - short, 1-2 hours just summary of activities
2) PPS General meeting (CERN): Feb 15th (?) - 1 day with possible overspill to 16th
3) PPS General meeting: Liverpool End May/ Beg June (?) (attached to the RD50 workshop)
For 1) we might want to provide some materialFor 2) and 3) we should prepare talks