Silicon Sensor with Readout ASICs for EXAFS Spectroscopy Gianluigi De Geronimo , Paul O’Connor Microelectronics Group, Instrumentation Division, Brookhaven National Laboratory, Upton, NY Rolf H. Beuttenmuller, Zheng Li Semiconductor Lab., Instrumentation Division, Brookhaven National Laboratory, Upton, NY Anthony J. Kuczewski, D. Peter Siddons National Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY
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Silicon Sensor with Readout ASICs for EXAFS Spectroscopy
Silicon Sensor with Readout ASICs for EXAFS Spectroscopy. Gianluigi De Geronimo , Paul O’Connor Microelectronics Group, Instrumentation Division , Brookhaven National Laboratory, Upton, NY Rolf H. Beuttenmuller, Zheng Li - PowerPoint PPT Presentation
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Silicon Sensor with Readout ASICs for EXAFS Spectroscopy
Gianluigi De Geronimo, Paul O’ConnorMicroelectronics Group, Instrumentation Division, Brookhaven National Laboratory, Upton, NY
Rolf H. Beuttenmuller, Zheng LiSemiconductor Lab., Instrumentation Division, Brookhaven National Laboratory, Upton, NY
Anthony J. Kuczewski, D. Peter SiddonsNational Synchrotron Light Source, Brookhaven National Laboratory, Upton, NY
Typical fluorescence EXAFS spectroscopy geometry
EXAFS
Sample
Sensor Detector
Resolution : > 200 S/N < 300 eV FWHM
Rate : > 10 MHz/cm2
> 100 kHz/pixel
Spectroscopy (energy windows)
Electronics front-end processing readout
2 – 20 keV
Resolution vs Rate
Cp
pixel
Ci
Ip
charge preamplifier
shaper
Q
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
amp
litu
de
Q
width 1 / rate
Am
plit
ud
e [
V]
Time [µs]
pixelsofnumberNN
Raterate
10rate
IA
p
rateCC)(AENC p
21
ip12
1k 10k 100k 1M10
100
1k
10k
1
12
118
1182
1pA
10pA
Ileak
= 100pA
Rm
s el
ectr
ons
F
WH
MS
i [eV
]
rate [Hz]
Resolution vs Rate
prateCC ip
1
NrateRate
ratep
2
IA
Optimum pixellation
20 mm
charge sharing (20µm/side) and trapping (gap/side) : empirical
2
1ip
2
pNP
NRate
C)N(CENC
Optimum pixellation
10 100 1k100
1k
10k
12
118
1182
400
P = 3W, p2 = 5mW
L = 20mm
cpa
= 400fF/mm2, c
pf = 75fF/mm
Ci = 300fF
p2 = 4mW
Rate = 10MHz
40MHz
Rm
s el
ectr
ons
F
WH
MS
i [eV
]
Pixel count N
quadrant(812=96 pixels)
96-channel front-end(3 32 channel ASICs)
Peltier
20mm
Si n-type high resistivity wafer 250µm thick,N = 384 p+ 1mm1mm pixels, Cp 700-1000fF
gaps 10µm, 30µm, 50µm
Beam through
sample
sensor
direct wire bonding
bump bonding
integrated metal lines
strips
Interconnecting pixel to front-end electronics
ASIC
sensor
+ interconnect parasitic+ bond length- fringe capacitance- charge sharing and trapping
ASIC
sensor
+ interconnect parasitic- constraint on ASIC area and layout- fluorescence from Pb (Sn/Pb/Ag)- illumination from segmented side
ASIC
sensor
+ dielectric losses interconnect parasitic- bond length
+ bond length- interconnect parasitic- dielectric losses