Silicon Carbide Detectors for Intense Luminosity Invesgaons and Applicaons CALL presentata nell’ambito della CSN5, anni 2016-2018 SiCILIA Luca Labate Istituto Nazionale di Ottica – CNR, Pisa and INFN, Sezione di Pisa
Silicon Carbide Detectorsfor Intense Luminosity Investigations and Applications
CALL presentata nell’ambito della CSN5, anni 2016-2018
SiCILIA
Luca Labate
Istituto Nazionale di Ottica – CNR, Pisaand INFN, Sezione di Pisa
SiCILIA
Active area 1 cm2 E stage thickness ≥ 100 m E stage thickness 500 ÷ 1000 m
Epitaxial growth SIC:beyond the state of the art
New Tecnology p-n junctions SiC
SiC E-E telescopes
Radiation Hard detectors for Nuclear Physics experiments and Nuclear applications
E a
mp
litu
de
(a.u
.)
E amplitude (a.u.)
Ion identification
Know how transfer
From the proposal Requirements for next generation nuclear physics experiments at high luminosity (E/E ~1/1000, m/m~1/200, t~0.1o), very low cross sections → high fluxes, exceeding those tolerated by state of the art solid state detectorsSimilar requirements are encountered in laser-driven proton/ion acceleration, where also the insensitivity to visible light would be an assetSilicon carbide offers an ideal response to such challenges
Wide bandgap (3.3eV) lower leakage current than silicon Signal (for MIP !): Diamond 36 e/m SiC 51 e/m Si 89 e/m more charge than diamond Si/SiC≈2
Higher displacement threshold than silicon
radiation harder than silicon
M.Moll , NIM in Physics Research A 511 (2003) 97–105
NUMEN project NUclear Matrix Elements of Neutrinoless Double Beta Decays by Heavy Ion Double Charge Exchange Reactions
DCE => 12C, 18O, 20Ne to energies between 15 and 30 MeV/u
Applications
MAGNEX
1 cm2 E-E telescope
European initiative for a next-generation charged particle array
FAZIA Collaboration
Radiation hard telescopes for heavy-ion induced reactions around and below the Fermi energy (10-100 AMeV). The project aim is to build a 4Pi array for charged particles, with high granularity and good energy resolution, with A and Z identification capability
-NPDetectors working in plasmas environment
TDR1-Laser Driven Nuclear Physics
Requirements Radiation Hardness Timing Insensitivity to the visible radiation X-ray sensitivity Neutron sensitivity (ITER, ESS, etc.) Nuclear reactions in Laser plasmas @ ELI-NP
ELIMED concept
ELI-Beamlines MEDical and multidisciplinary applications
Applications
SiC detector construction: state of art
Schottky diodes on epitaxyal layer grow onto high-purity 4H–SiC n- type substrate
Active thickness ~ 80 m 4H-SiC bulk ~ 250 m Active Area ~ 2x2 mm2
SiCILIA 1 cm2 E-E telescope thickness of E stage ≥ 100 m thickness of E stage 500 ÷ 1000 m
Istituto per la Microelettronica e Microsistemi
Deliverables
SiCILIASiCILIA
WP4: G.GoriniNeutrons
Irradiation and test
WP4: G.GoriniNeutrons
Irradiation and test
WP5: D. GiovePhoton detection and spectroscopy
WP5: D. GiovePhoton detection and spectroscopy
WP6: G.PasqualiIons identification:
Pulse shape discrimination
WP6: G.PasqualiIons identification:
Pulse shape discrimination
WP1: S.Tudisco Design studies
and test
WP1: S.Tudisco Design studies
and test
WP2: F. La ViaMaterial Study
and devicesconstruction
WP2: F. La ViaMaterial Study
and devicesconstruction
WP3: G.CirroneIons and electrons
irradiation
WP3: G.CirroneIons and electrons
irradiation
CNR-IMM Catania
Tests @CNR-INO Pisa
FBK Trento ST-Microelectronics
Work packages organizationWP1 – Project coordinator and management
Tests @CNR-INO Pisa
Risultati 2016
- Definizione delle specifiche rivelatori WP1,WP2
Simulazioni
- Definizione processo di realizzazione rivelatori WP2, WP1, WP5, STM, FBK
Definizione processo di epitassia: Caratterizzazione processo e resa ipotetica
Definizione strutture di bordo: Giunzione P+/N, Diodi Schottky
Lay-out e definizione del processo di realizzazione: Giunzioni P+/N, Diodi Schottky
- Allestimento set-up per caratterizzazioni WP2, WP5
Realizzazione dei dispositivi
- Test su diodi commerciali e vecchi dispositivi WP5, WP1, WP6
- Preparazione linee di irraggiamento WP3, WP4
- Test di dispositivi di confronto WP4
Test e preparazione dei set-up di misura
People FTE 2017Giancarlo Bussolino 0.8Luca Labate 0.5
Milestones 2018
WP1 – Caratterizzazione test e ottimizzazione dei prototipi - Design and construction del dimostratore SiC-Wall
WP2 - Characterization dei prototipi - Ottimizzazione and realizzazione dei dispositivi finali
WP3 - Irragiamenti ai LNS - Irraggiamenti al LINAC di Messina - Test sperimentali in laser-driven facilities (tra cui ILIL-INO-CNR)
Wp4 - Installazione di prototipi SiC al JET fusion reactor
Wp5 - Caratterizzazione X-Ray spectroscopy dei prototipi SiC
Wp6 - Studio dei prototipi di SiC single pads e telescopi con fasci ionici.
Pisa activity in 2017 (partial overlapping with L3IA activity)
- Design and construction of the proton test beamline @ILIL-PW (collaboration with LNS)- Test of “old” SiC detectors (next test with SiC detectors developed in the framework of SiCilia foreseen in 2 weeks from now)
Pisa foreseen activity in 2018
- Test of SiC detectors (2-3 experimental campaigns)
Richieste 2017
Pisa: Consumi (consumabili laser) → 3 kEuroInventario (translation stages) → 5 kEuro