1 CORPE Accelerated Aging of 4-terminal Device 2 on-state voltage measurements:V DS and V SS - Use of Kelvin-source (or emitter) becoming more common - V DS covers MOSFET die (could also be IGBT) - V SS covers bond-wires - Die resistance and bond-wire resistance can be calculated separately V SS MOSFET D S G Bond-wire Aux. S V DS V DS Measurement Circuit [17] Instrumentation Amplifier Schematic for online V SS and V DS measurements First Prototype Measurement Board
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1
CORPE
Accelerated Aging of 4-terminal Device
2 on-state voltage measurements: VDS and VSS
- Use of Kelvin-source (or emitter) becoming more common
- VDS covers MOSFET die (could also be IGBT)
- VSS covers bond-wires
- Die resistance and bond-wire resistance can be calculated
separately
VSS
MOSFET
D
S
G
Bond-w
ire
Aux. S
VDS
VDS Measurement Circuit [17] Instrumentation Amplifier
Schematic for online VSS and VDS measurements First Prototype Measurement Board
2
CORPE
Full 6-pack Cycler
Measurement Board Version 2
- Power cycling on 6 MOSFETs simultaneously (six-pack module)
- Die resistance recorded
- Bond-wire resistance recorded
- µΩ changes can be recorded
Measurement board output during 2-second current pulse on 20A MOSFET
3
CORPE
Full 6-pack Cycler
Measurement Board Version 2
- Power cycling on 6 MOSFETs simultaneously (six-pack module)
- Die resistance recorded
- Bond-wire resistance recorded
- µΩ changes can be recorded
Measurement board output during 2-second current pulse on 20A MOSFET
4
CORPE
Power Cycling Results – Bond-wires
Power Cycling Test of 20A SiC MOSFETs
- Several step increases – cracks forming
- MOSFET 5 first to fail after period of increased gradient
- MOSFET 2 has first step increase
5
CORPE
Power Cycling Results – Bond-wires
Power Cycling Test of 20A SiC MOSFETs
- Several step increases – cracks forming
- MOSFET 5 first to fail after period of increased gradient
- MOSFET 2 has first step increase
6
CORPE
Power Cycling Results – Bond-wires
Power Cycling Test of 20A SiC MOSFETs
- Several step increases – cracks forming
- MOSFET 5 first to fail after period of increased gradient
- MOSFET 2 has first step increase
7
CORPE
Power Cycling Results – Die Resistance
Power Cycling Test of 20A SiC MOSFETs
- Resistance of die initially decreases – possibly VTH shift
8
CORPE
Power Cycling Results – Die Resistance
Power Cycling Test of 20A SiC MOSFETs
- Resistance of die initially decreases – possibly VTH shift
9
CORPE
Measurement Board Version 3
More parameters: more information on degradation
- Bond-Resistance
- Die Resistance
- Threshold Voltage
- Thermal Resistance
- Reduce required testing time and have more targeted post-
failure analysis
- Provide clear information on the formation of failures during
aging tests
- Help accurate failure prediction
- Contact: [email protected]
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