SGU - Material Science Part 5 [Special Subject_ Nano Material]

SWISS GERMAN UNIVERSITY

Hernanto Wiryomijoyo / MT / Bachelor / Material Science Rev. 2– 01/05/07

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MATERIAL SCIENCEPart 5 [Special Subject: Introduction to Application of Nano Material Composite and Technology]

Main References:1. http://www.crnano.org2. http://www.intel.com/research/silicon3. http://www.platit.com

http://www.intel.com/research/silicon

http://www.platit.com/



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Nanotechnology is the projected ability to make things from the bottom up, using techniques and tools that are being developed today to place every atom and molecule in a desired place. If this form of molecular engineering is achieved, which seems probable, it will result in a manufacturing revolution. It also has serious economic, social, environmental, and military implications.

The principles of physics, as far as I can see, do not speak against the possibility of manuvering things atom by atom. It is not an attempt to violate any laws; it is something, in principle, that can be done; but in practice, it has not been done because we are too big. — Richard Feynman, Nobel Prize winner in physics

When Eric Drexler (right) popularized the word 'nanotechnology' in the 1980's, he was talking about building machines on the scale of molecules, a few nanometers wide—motors, robot arms, and even whole computers, far smaller than a cell. Drexler spent the next ten years describing and analyzing these incredible devices, and responding to accusations of science fiction

What is nanotechnology?

Meanwhile, mundane technology was developing the ability to build simple structures on a molecular scale. As nanotechnology became an accepted concept, the meaning of the word shifted to encompass the simpler kinds of nanometer-scale technology. The U.S. National Nanotechnology Initiative was created to fund this kind of nanotech: their definition includes anything smaller than 100 nanometers with novel properties.

Nanotechnology is often referred to as a general-purpose technology. That’s because in its mature form it will have significant impact on almost all industries and all areas of society. It offers better built, longer lasting, cleaner, safer, and smarter products for the home, for communications, for medicine, for transportation, for agriculture, and for industry in general.

http://www.crnano.org/overview.htm

http://www.foresight.org/FI/Drexler.html

http://www.crnano.org/crnglossary.htm#Nanometer

http://www.nano.gov/

http://www.crnano.org/products.htm



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(A) shows a hand holding a computer chip. This is shown magnified 100 times in

(B) Another factor of 100 magnification (C) shows a living cell placed on the chip to show

scale. Yet another factor of 100 magnification(D) shows two nanocomputers beside the cell. The

smaller (shown as block) has roughly the same power as the chip seen in the first view; the larger (with only the corner visible) is as powerful as mid-1980s mainframe computer. Another factor of 100 magnification

(E) shows an irregular protein from the cell on the lower right, and a cylindrical gear made by molecular manufacturing at top left. Taking a smaller factor of 10 jump,

(F) shows two atoms in the protein, with electron clouds represented by stippling. A final factor of 100 magnification

(G) reveals the nucleus of the atom as a tiny speck.

The Power of Ten



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Yield Trend for Intel® Logic Technologies



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90 Nanometer: The World's Most Advanced Chip-Making Process from

Intel®

• Intel has been driving the pace of Moore's Law by introducing a new process generation every two years. The 90 nanometer (nm) process is the next generation after the 0.13-micron process. 0.13-micron is the process Intel currently uses to make the bulk of its microprocessors.

• Intel has announced the integration of strained silicon to improve the performance of transistors on the 90-nm process technology, the most advanced semiconductor manufacturing process in the industry.

• Technology and Manufacturing Group, and director of process architecture and integration adding, "The transistors use features that other companies have yet to match, such as a 1.2-nm gate oxide thickness, nickel silicide for low resistance, and strained silicon technology."

• 90-nm process combines higher-performance, lower-power transistors, strained silicon, high-speed copper interconnects and a new low-k dielectric material. This is the first time all of these technologies will be integrated into a single manufacturing process.



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Transistor Strain Techniques

Legends:S: Source; D: Drain; G: Gate



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Intel's Strained Silicon Transistors• A unique selectively deposited SiGe Source-Drain structure

induces channel strain in PMOS devices, improving drive current by 25% relative to non-strained devices.

• A high stress Si3N4 cap layer induces channel strain in NMOS devices, improving drive current by 10% relative to non-strained devices.

• NMOS and PMOS transistors are optimized separately for high performance using this approach to strain engineering and the added process cost is only ~2%.

• This approach to transistor strain engineering is scalable to future generations.



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90 nm Generation Transistors



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90 nm Generation Interconnects



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90 nm Generation Transistors consider the behaviour of silicon atoms-they form

an orderly grid-like pattern or lattice structure. Intel engineers strain or stretch this lattice, allowing electrons to flow faster with less resistance.

In NMOS devices (N for negative) the signal carriers, or electrons, have a negative charge. Current is on when a NMOS transistor gate is at high voltage, and off when its gate is at low voltage.

In PMOS (P for positive) devices, the signal carriers are "holes," or an absence of electrons. The current in a PMOS transistor flows opposite to that of an NMOS transistor. It is off when its gate voltage is high and on when its gate voltage is low.

The Intel process stresses the crystal lattice differently for NMOS and PMOS devices. This results in drive current improvements of about 10 percent for NMOS and 25 percent for PMOS in silicon manufactured with Intel's 90nm process while increasing manufacturing costs by only two percent.



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90 nm Integrating Strained Silicon CMOS (complementary metal oxide

semiconductor) is Intel's process technology for making all logic chips, such as microprocessors and chipsets. CMOS consists of two types of transistors, N and P. These transistor types operate differently.

Strained silicon is a process to raise drive current in both types of CMOS transistors. Using a very thin layer of single-crystal silicon with built in stress, or strain, improves drive current, making the devices run faster. At the molecular level, this silicon resembles a lattice.

125-million transistor desktop processor, code-named Prescott, and a 144-million transistor mobile processor, code-named Dothan.

Code Name: Prescott; Clock Speed: 2.80 – 3.40 GHz; Die Size: 112 mm2; L1 Cache: 16 KB; L2 Cache: 1 MB; Total Instruction: 157; Total Pipeline: 31



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The keyboard on any flat surfaces from where you can carry out functions you would normally do on your desktop computer…

And also….



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In the revolution of miniature computers, scientists have made great developments with bluetooth technology... So Goodbye Laptop



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Knowledge Based Small-Medium Enterprises (KB-SME)



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Nano-structured Coatings

The three most important structures are deposited as nanogradients (with continuous changing of the composition from the substrate to the top), nanolayers (with typical sublayer’s thicknesses of 3 – 10 nm), nanocomposites (nanocrystalline grains are embedded into an amorphous matrix).



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Nano Structured Coatings



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PVD-Coating of Nano-composites with Dynamic Rotating ARC-Cathodes – [LARC®: LAteral Rotating ARC-Cathodes]

To deposit nano-composites based on nano-layers on an industrial and economic scale, the coating equipment have to fulfil the following basic requirements:

• The cathodes must be built in very close to each other.• A highly ionized plasma,• Supported by a strong magnetic field is necessary.• This requires a very fast motion of the ARC track.



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Nano-structured Bonding Process The magnetic field is turned by 180° and the ARC is ignited from the back. Due to this procedure it is possible to clean the targets before the coating process begins - and to deposit the initially large particles (droplets) against the wall. Meanwhile the substrates can be cleaned in intensive plasma. The ARC will be turned towards the tools without being distinguished. In effect, it is possible to shorten the time of ion etching and to deposit the adhesive coating with metallic clean targets.



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Nano-structured Coating Chemical Strategy

Due to the fast ARC-spot and the use of different “pure” targets (e. g. Ti, Al or AlSi) the coating stochiometry (composition) is freely programmable (continuously changeable = gradient) even during the processes.

• At the beginning of this LARC.-coating, the aluminium will be deposited later to the titanium, so that an optimum adhesion coating can emerge.

• Afterwards, during the deposition, the Al-content is continuously increased, so that the hardness, temperature stability and oxidation resistance of the coating improve.



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Nano-indentation of Nano-composite (nc-Ti1-xAlxN) / (a-Si3N4)The silicon is deposited from alloyed targets (AlSi, CrSi, TiSi etc.) After the deposition from the target, Al and Si must be segregated. Silicon is not solved into the metallic phase, the nano-crystalline grains (TiAlN) are embedded into an amorphous Si3N4-matrix.

For this highly ionized plasma, a highly intensive magnetic field is necessary. A fast ARC-spot movement will permit a high intensive magnetic field without “cutting through” the targets (which is a real danger with planar targets). The emergence of the nano-composite structure shows no “space” between the nano-crystalline grains, keeps the crystal sizes small and the interface boundaries sharp, therefore giving a high hardness. An additional advantage is the stop of crack propagation at the grain boundaries.



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Hardness Increasing by Nano-composite (nc-Ti1-xAlxN) / (a-Si3N4)

• Nano-composite segregation completed• Si is not in the metallic phase, only Si3N4

• high hardness• high stability up to high temperatures



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Oxidation Resistance of Nano-composite Coating

Sample No.

Konsentrasi oksigen diukur dengan ERD

setelah deposisi

Konsentrasi oksigen diukur dengan ERD setelah beberapa

lamaKonsentras

i oksigen (at.%)

Umur setelah deposisi (hari)

Konsentrasi oksigen

(at.%)

Umur setelah beberapa lama (hari)

140199 0.07 30 0.05 645

180199 0.06 26 0.05 641

260199 0.03 4 0.02 633

080499 - - 0.01 494

170599 - - 0.8 455

130999 - - 0.05 397 200 400 600 800 1000 1200-10

0

10

20

30

40

50

60 (a) Si 3 N4= 16.18%; TiSi 2 = 9.57 %(b) Si 3 N4= 18.01%; TiSi 2 = 14.27 %(c) Si 3 N4=10.73%; TiSi 2 = 18.52 %(d) Si 3 N4= 10.73%; TiSi 2 = 18.52 %

(d)

(c)

(b)

(a)

pena

mba

han

bera

t [m

g/cm

2 ]

temperatur udara kering [ o C]



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Heat Resistance of Nano-composite Coating (nc-Ti1-xAlxN) / (a-Si3N4)



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Hardness Comparison of selected Nano-composite Material with other strong materials.



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Micro Structuring of Edges of Precision Tools

after micro structuring

before micro structuring



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Application of Nano-composite Coatings

NOTE: The knowledge based small and medium size enterprises (KB-SME) are the driving forces for the development of new innovative technologies for today’s manufacturing industry. There are a lot of innovative ideas, products and technologies, developed by KB-SME’s, they point the way ahead. This paper shows three of them with outstanding importance:• Integration of conventional cutting technologies and lasering into multi-functional machine centers for high performance and precision machining• Intelligent tools measuring and reacting directly on the cutting edge• Compact coating machines depositing nanostructured coatings directly in the manufacturing work shopThe innovative technologies of the KB-SME’s are extremely important for the manufacturing industry and for the whole society.



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10-10-50µm50µm

Fiber

10-10-100nm100nm

Water Water DropletDroplet

Nano-Whiskers™ Textile



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Military Industry

SGU - Material Science Part 5 [Special Subject_ Nano Material]

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