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The 9th International Conference on Information Optics and
PhotonicsSession 1: Photonic Integration and Optical
Interconnect
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Sess
ion
1
Session 1: Photonic Integration and Optical Interconnect
18th JulyChair: Daoxin Dai, Zhejiang University, China
14:00-14:45Photonic Integrated Devices with Nanostructures
(Keynote) Yidong HuangTsinghua University, China
- 7 -
14:45-15:15Energy-Efficient Silicon Photonic Transmitters for
Pulse-Amplitude Modulation (Invited) Wei ShiCenter for optics,
photonics, and lasers (COPL), Laval University, Canada
- 8 -
15:15-15:45Engineering Wavefront for Tailoring Accelerating
Beams Based on Integrated Photonic Approaches (Invited) Yujie
ChenSun Yat-sen University, China
- 9 -
15:45-16:00 Coffee BreakChair: Yidong Huang, Tsinghua
University, China
16:00-16:30Silicon Microring Resonators for Optical Filtering
and Switching (Invited) Daoxin DaiZhejiang University, China
- 10 -
16:30-17:00Photonic Integrated Devices on Silicon Platform for
Chip-Scale Optical Interconnects and Processing (Invited) Jian
WangHuazhong University of Science and Technology, China
- 11 -
17:00-17:30Electro-Optic Modulation and Thermo-Optic Tuning
Based on Silicon-Graphene Hybrid Structure (Invited) Ciyuan
QiuShanghai Jiao Tong University, China
- 12 -
18:00-19:00 Dinner Time
19th JulyChair: Baile Zhang, Nanyang Technological University,
Singapore
09:00-09:30Silicon Optical Modulators with Advanced Modulation
Formats (Invited) Lin YangState Key Laboratory on Integrated
Optoelectronics, Institute of Semiconductors, CAS, Beijing,
China
- 13 -
09:30-10:00Monolithic Integration of III-V Quantum Dot Lasers on
Silicon for Silicon Photonics (Invited) Siming ChenUniversity
College London, UK
- 14 -
10:00-10:30Physics-Enabled Design and Innovation in Silicon
Photonics: From Novel Devices to High-Density Waveguides
Integration (Invited) Wei JiangNanjing University, China
- 15 -
10:30-10:45
Relative Intensity Noise of An InAs/GaAs Quantum Dot Laser
Epitaxially Grown on Germanium (Oral) Cheng Zhou1, Yueguang Zhou2,
Chunfang Cao3, Jiangbing Du1, Qian Gong3, Cheng Wang2 1 Shanghai
Jiao Tong University, China; 2 ShanghaiTech University, China; 3
Shanghai Institute of Microsystem and Information Technology, CAS,
China
- 19 -
10:45-11:00 Coffee BreakChair: Lin Yang, State Key Laboratory on
Integrated Optoelectronics, Institute of Semiconductors, CAS,
Beijing, China
11:00-11:30Surface-Wave Photonic Crystals (Invited) Baile
ZhangNanyang Technological University, Singapore
- 16 -
11:30-11:45Measure and Correct the Orbital Angular Momentum
Spectra of Light Beams (Oral) Peng Zhao, Xue Feng, Yidong Huang
Tsinghua University, China
- 19 -
12:15-14:00 Lunch Time
Zhiping (James) Zhou, Peking University, ChinaYidong Huang,
Tsinghua University, ChinaSiyuan Yu, Sun Yat-sen University,
China
Session Chairs:
Location: B515, 5F, Main Building, Harbin Institute of
Technology No.2 Campus
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The 9th International Conference on Information Optics and
PhotonicsSession 1: Photonic Integration and Optical
Interconnect
- 6 -
Session 1
19th JulyChair: Wei Jiang, Nanjing University, China
14:00-14:30Integrated Devices for Optical Vortices (Invited) Xue
FengTsinghua University, China
- 17 -
14:30-15:00China Silicon Photonics Platform in A Multi Project
Wafer Service (Invited) Junbo FengChina Electronics Technology
Group Corporation 38th Research Institute, China
- 18 -
15:30-16:00 Coffee Break15:30-17:30 Poster18:00-20:00
Banquet
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 7 -
Sess
ion
1
Photonic Integrated Devices with Nanostructures
ABSTRACT
BIOGRAPHYYidong Huang was born in Beijing, China. She received
the B.S.
and Ph.D. degrees in optoelectronics from Tsinghua University,
Beijing, China, in 1988 and 1994, respectively. From 1991 to 1993,
she was with Arai Laboratories, Tokyo Institute of Technology,
Japan, on leave from the Tsinghua University. Her Ph.D.
dissertation was mainly concerned with strained semiconductor
quantum well lasers and laser amplifiers. In 1994, she joined the
Photonic and Wireless Devices Research Laboratories, NEC
Corporation, where she was engaged in the research on semiconductor
laser diodes for optical-fiber communication and became an
assistant manager in 1998. She received “Merit Award” and
“Contribution Award” from NEC Corporation in 1997 and 2003,
respectively. She joined the Department of Electronics Engineering,
Tsinghua University in 2003, as a professor, and be appointed by
the Changjiang Project and the National Talents Engineering in 2005
and 2007, respectively. She was Vice Chairman of the Department
from 2007-2012 and has been the Chairman of the Department from
2013. She is presently engaged in research on nano-structure
optoelectronics. Professor Huang authored/co-authored more than 300
journal and conference papers. She is a senior member of the
IEEE.
Yidong HuangTsinghua University,
China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 8 -
Session 1
Energy-Efficient Silicon Photonic Transmitters for
Pulse-Amplitude Modulation
ABSTRACTEnergy-efficient data transmissions through optical
interconnects
are required for rapidly growing short and mid-reach markets
such as data centers and ultra-high-speed computing. Further
increase in optical transmission speed has been hindered by power
consumption and limited bandwidth resources, for which integrated
optical transceivers using advanced modulation formats, such as
pulse-amplitude modulation (PAM), are a promising solution. In this
talk, we review our recent progress in silicon photonics for PAM
transmissions, such as femtojoule PAM modulators and DAC-less
CMOS-SiP integrated transmitters.
BIOGRAPHYWei Shi is an Assistant Professor in the Department of
Electrical
and Computer Engineering, Université Laval, Québec, QC, Canada.
He received the Ph.D. degree in electrical and computer engineering
from the University of British Columbia, Vancouver, BC, Canada, in
2012, where he was awarded the BCIC Innovation Scholarship for a
collaboration entrepreneurship initiative. Before joining
Université Laval in 2013, he was a researcher at McGill University,
Montreal, QC, Canada, where he held a Postdoctoral Fellowship from
the Natural Sciences and Engineering Research Council of Canada
(NSERC). His research focuses on integrated photonic devices and
systems, involving silicon photonics, nanophotonics design and
fabrication, CMOS-photonics co-design, high-speed optical
transmission and detection, and integrated lasers. He currently
directs a NSERC Strategic Partnership Grants (SPG) project on
hybrid photonic integration and a NSERC Collaboration Research and
Development Grants (CRD) project on high-speed silicon photonic
transmitters for advanced modulation formats.
Wei ShiCenter for Optics,
Photonics, and Lasers (COPL), Laval University,
Canada
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 9 -
Sess
ion
1
Engineering Wavefront for Tailoring Accelerating Beams Based on
Integrated Photonic Approaches
ABSTRACTLight fields with appropriate wavefront design are
capable of
propagating along curved trajectories in free space, namely,
accelerating beams, which can be useful for either energy or
information delivery using light. Previous methods for the
realization of accelerating beams are mainly based on bulky
phase-only spatial light modulator. In this talk, I will discuss
how we can engineer wavefront using integrated photonic approaches
with the outcome of the generation of accelerating beams.
BIOGRAPHYYujie Chen received his Ph.D. degree in Physics
(Photonics) from the
Institute of Photonics, University of Strathclyde, Glasgow, UK,
in 2012. He is currently an associate professor in School of
Electronics and Information Technology at Sun Yat-sen University,
Guangzhou, China. His research is mainly focused on the interaction
of light with micro/nano-structures and their applications in
integrated photonic devices. Up to date, he has
authored/co-authored for about 48 peer-reviewed articles, 30
conference papers, 2 book chapters, as well as several patent
applications.
Yujie ChenSun Yat-sen University,
China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 10 -
Session 1
Silicon Microring Resonators for Optical Filtering and
Switching
ABSTRACTSilicon-based optical micro-ring resonators (MRRs) are
very
attractive for many applications because of the ultra-compact
footprint and easy fabrication. This paper gives a review of our
recent work on novel silicon-based MRRs and the applications for
optical filtering and switching. The following parts are included.
(1) A “perfect” high-order MRR optical filter with a box-like
filtering response is realized by introducing bent directional
couplers; (2) A efficient thermally-tunable MRR optical filter with
a graphene transparent nano-heater is realized by introducing
transparent graphene nanoheaters; (3) Polarization-selective MRR
optical filters are realized to work with resonances for only one
of TE and TM polarizations for the first time. (4) A on-chip
reconfigurable optical add-drop multiplexer for hybrid
mode-/wavelength-division-multiplexing systems is realized for the
first time by monolithically integrating a mode demultiplexer, four
tunable MRR optical switches, and a mode multiplexer.
BIOGRAPHYProf. Daoxin Dai received the B. Eng. degree from
Zhejiang
University (ZJU) in 2000, and the Ph.D. degree from the Royal
Institute of Technology (Sweden) in 2005. He joined ZJU as an
assistant professor in 2005 and became an associate professor in
2007, a full professor in 2011. Dr. Dai worked at UCSB as a
visiting scholar from the end of 2008 until 2011. His research
interests are in silicon nanophotonics for optical interconnections
and optical sensing. He has published >150 refered international
journals papers (including 10 invited review papers). Dr. Dai is
one of Most Cited Chinese Researchers in 2015 and 2016 (from
Elsevier). His paper has >4560 citations and the H-index is 38
(Google Scholar). He has been invited to give more than 40 invited
talks and served as the program committee member or session chair
for many top international conferences (like OFC 2013-2015). Dr.
Dai was the leading Guest Editor of the Integrated Photonics
special issue of Photonics Research. He is serving as the Associate
Editor of the Journals of "IEEE Photonics Technology Letters",
"Optical and Quantum Electronics" and "Photonics Research".
Daoxin DaiZhejiang University,
China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 11 -
Sess
ion
1
Photonic Integrated Devices on Silicon Platform for Chip-Scale
Optical Interconnects and Processing
ABSTRACTSilicon photonics is a promising nanophotonic
integration platform
facilitating possible integration of complete optical
communication systems on a monolithic chip. In this talk, we will
report recent advances in photonic integrated devices on silicon
platform for chip-scale optical interconnects and processing.
Design, fabrication and applications of different kinds of silicon
nanophotonic devices are discussed, such as strip waveguides, slot
waveguides, hybrid plasmonic waveguides, microring resonators, comb
filter and interleaver.
BIOGRAPHYJian Wang received the Ph.D. degree in physical
electronics
from the Wuhan National Laboratory for Optoelectronics, Huazhong
University of Science and Technology, Wuhan, China, in 2008. He
worked as a Postdoctoral Research Associate in the Optical
Communications Laboratory in the Ming Hsieh Department of
Electrical Engineering of the Viterbi School of Engineering,
University of Southern California, Los Angeles, California, USA,
from 2009 to 2011. He is currently a professor at the Wuhan
National Laboratory for Optoelectronics, Huazhong University of
Science and Technology, Wuhan, China. He gained supports from the
New Century Excellent Talents in University in 2011, the National
Science Foundation for Excellent Young Scholars in 2012, and the
National Program for Support of Top-notch Young Professionals in
2015.
Jian Wang has devoted his research efforts to innovations in
photonic integrated devices and frontiers of high-speed optical
communications and optical signal processing. He has more than 300
publications, including 3 book chapters, 2 special issues, 3 review
articles, 5 invited papers, 42 tutorial/keynote/invited talks
(invited talk at OFC2014, tutorial talk at OFC2016), 8 postdeadline
papers, and more than 100 journal papers published on Science,
Nature Photonics, Scientific Reports, Optics Express, Optics
Letters, etc.
Jian WangHuazhong University of
Science and Technology, China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 12 -
Session 1
Electro-Optic Modulation and Thermo-Optic Tuning Based on
Silicon-Graphene Hybrid Structure
ABSTRACTGraphene is considered to be a promising material to
build active
optoelectronic device. In this talk, we firstly review recent
research progress on the silicon-graphene optoelectronic devices.
Then we present our works on the electro-optic modulators and the
thermo-optic tunable filter based on silicon-graphene hybrid
structure. By tuning the Fermi level of the graphene, we
demonstrate a silicon-graphene micro-ring electro-optic (EO)
modulator with modulation depth about 40%. We also propose a
nanobeam EO modulator and a spatial light modulator with speed
higher than 45 GHz. Thanks to the high thermo-optic coefficient of
graphene, we demonstrate a tunable filter with heating efficiency
about 1.5 nm/mW.
BIOGRAPHYCiyuan Qiu received the B.S. degree and M.S. degree
from Tsinghua
University, Beijing, China in 2005 and 2007 respectively, and
the Ph.D. degree from Rice University, Houston, USA, in 2013. He
then worked as post-doc in Rice University until June 2014. He
joined Shanghai Jiao Tong University, Shanghai, China, in August
2014. Dr. Qiu has published 59 journal and conference papers. He
has 1 first-author paper published in Nano Letters (IF=13.779) and
1 first-author paper published in Scientific reports (IF=5.578).
The total SCI citation is 381 from other researchers.
Ciyuan QiuShanghai Jiao Tong
University, China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 13 -
Sess
ion
1
Silicon Optical Modulators with Advanced Modulation Formats
ABSTRACTI will review our efforts in developing high-speed
silicon Mach-
Zehnder optical modulators with large optical bandwidth.
Firstly, I will introduce how to optimize the modulation
efficiency, optical loss, electro-optical bandwith of the silicon
optical modulator. The fabricated silicon Mach-Zehnder optical
modulator has an electro-optical bandwidth of 30 GHz. When the
device is optically biased at the quadrature point, it has the
dynamic extinction ratios of 6.5 dB, 5.9 dB and 5.2 dB at the
speeds of 40 Gbps, 50 Gbps and 64 Gbps for OOK modulation.
Secondly, I will introduce a silicon 16-QAM optical modulator,
which is based on four Mach-Zehnder modulators driven by four
binary electrical signals. With the simple electrical driving
configuration, the device generates a 16-QAM optical signal at 20
Gbaud with an error vector magnitude of 13.7%. Finally, I will
introduce two types of silicon PAM-4 optical modulator. One is
driven by a PAM-4 electrical signal and the other is driven by two
binary electrical signals with different peak-to-peak voltages.
Both two devices can generate PAM-4 optical signals at the speed of
over 30 Gbaud in the wavelength of 1525-1565 nm. The corresponding
bit error rates could reach as low as ~10−6, which is below the
hard-decision forward error correction threshold of 3.8×10-3.
BIOGRAPHYLin Yang received his Ph. D. degree in microelectronics
and solid
state electronics from Institute of Semiconductors, Chinese
Academy of Sciences, Beijing, China, in 2003. From 2003 to 2007, he
was a postdoctoral fellow of Research Center for Integrated Quantum
Electronics, Hokkaido University, Sapporo, Japan. He is currently a
professor of State Key Laboratory on Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing,
China. His current research interests include silicon-based
photonic devices for optical interconnect, optical computing and
optical communication. He is the author or co-author of 80 journal
papers and 100 conference papers.
Lin YangState Key Laboratory
on Integrated Optoelectronics, Institute
of Semiconductors, CAS, Beijing, China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 14 -
Session 1
Monolithic Integration of III-V Quantum Dot Lasers on Silicon
for Silicon Photonics
ABSTRACTThe availablility of silicon lasers is the key
technology for the whole Si
photonics industry. But the indirect bandgap of silicon is a
severe limitation, and, despite recent advances, these devices will
not, in the foreseeable future, outperform their III-V
counterparts. Much effort has been directed toward hybrid
integration of III-V lasers with Si photonics platforms. Although
impressive results have been achieved, on a longer term,
large-scale integration of photonics circuits will rely on
monolithic integration of laser sources on silicon.
In this talk, I will review our recent progress made in the
direct growth of III-V light sources on silicon. I firstly briefly
address issues related to the III-V/Si substrates itself before
moving to results on III-V quantum lasers monolithically integrated
on Ge, Ge-on-Si, and Si substrates.
BIOGRAPHY Siming Chen received his MSc and PhD degrees in
Electrical
Engineering from the University of Sheffield, U.K., in 2010 and
2014, respectively. In Sep 2013, he joined the Department of
Electronic and Electrical Engineering at University College London,
U.K., as a research associate. He is currently a Royal Academy of
Engineering (RAEng) Research Fellow hosted by University College
London. His major research interest concentrates on monolithic
integration of III-V compound semiconductors and optoelectronic
devices on silicon substrates.
Since 2011, Chen has published over 50 papers in international
journals and conference proceedings, such as Nature Photonics, ACS
Photonics, MRS Bulletin, Applied Physics Letters, Optics Express
and IEEE JSTQE, etc. Chen’s research achievements have been widely
reported/highlighted by over 20 tech magazines, newspapers, and
websites world-wide, including Daily Mail, OSA: optics &
photonics, Technology.org, Photonics.com, Headlines & Global
News, Science Daily, Nanotechnology Now, SPIE Newsroom,
Semiconductor Today, IET, Phys.org and Space Daily, etc. Chen has
also filed 5 international patents, with 1 granted already.
Siming ChenUniversity College
London, UK
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 15 -
Sess
ion
1
Physics-Enabled Design and Innovation in Silicon Photonics: From
Novel Devices to High-Density Waveguides Integration
ABSTRACTSilicon photonics is making rapid advances in recent
years.
Currently, basic device building blocks have become widely
available. In the future, innovation opportunities may continue to
emerge in devices and integration. At the device level, novel
structures (such as photonic crystals and resonators) show promise
to reduce device size and power consumption, yet they may bring
sophisticated physics that cannot be easily analyzed by common
simulation tools such as FDTD. Advanced physics theory is needed to
analyze performance of such novel devices. Furthermore, advanced
device physics and design can also help to prevent device failure
in fabrication. We will show an example how this helped to
successfully fabricate Si photonic devices on a CMOS fab line that
has not done photonics before. Lastly, for large-scale integration,
physics-based theory can also help. High-density waveguide
integration at half-wavelength waveguide pitch has been
demonstrated with very low crosstalk, assisted by advanced physics
theory. Potential applications of such high-density waveguides in
optical phased arrays and space-division multiplexing will be
discussed.
BIOGRAPHYWei Jiang received his B.S. degree in physics from
Nanjing
University, Nanjing, China, in 1996, and his M.A. degree in
physics and his Ph.D. degree in electrical and computer engineering
from the University of Texas, Austin, in 2000 and 2005,
respectively.
He is currently a professor in the Department of Quantum
Electronics and Optical Engineering, College of Engineering and
Applied Sciences, Nanjing University, Nanjing, China. Prior to
joining Nanjing University, he was an assistant professor and then
an associate professor in the Department of Electrical and Computer
Engineering of Rutgers, the State University of New Jersey, USA.
His research interests include silicon photonics, photonic
crystals, nanophotonics, and their applications in communications,
computing, and sensing.
Dr. Jiang received DARPA Young Faculty Award in 2012 and IEEE
Region I Outstanding Teaching Award in 2013, among other
honors.
Wei JiangNanjing University,
China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 16 -
Session 1
Surface-Wave Photonic Crystals
ABSTRACTPhotonic crystals, also known as photonic bandgap (PBG)
materials,
can forbid the propagation of electromagnetic (EM) waves in a
certain frequency range in all directions, but they generally lack
subwavelength features. In parallel, EM modes supported on
periodically textured metal surfaces, which are commonly termed as
spoof (or designer) surface plasmons, possess spatial scales
typically much smaller than the wavelength, but they generally do
not have PBG concepts. Here we show that it is possible to merge
these two fields by creating surface-wave photonic crystals. Many
device concepts in the context of photonic crystals can thus be
transferred and applied directly to the manipulation of surface
waves at the subwavelength scale.
BIOGRAPHYDr. Baile Zhang is an Associate Professor in the
Division of Physics
and Applied Physics, School of Physical and Mathematical
Sciences, at Nanyang Technological University, Singapore. He
received his Ph.D. in 2009 from MIT, following his B.S. degree in
2003 and M. S. degree in 2006 from Tsinghua University in Beijing,
all majored in Electrical Engineering.
Baile ZhangNanyang Technological University, Singapore
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 17 -
Sess
ion
1
Integrated Devices for Optical Vortices
ABSTRACTIntroduced by Allen et al., it has been realized that
light can
carry orbital angular momentum (OAM) in addition to the spin
angular momentum (SAM). Independent of the polarization state,
light with an azimuthal phase dependence of exp(ilφ) has OAM lћ per
photon. The value of l (the topological charge), as a new
dimensionality, can be valued with any integer. Having l spiral
phase fronts and a transverse component of the Poynting vector
perpendicular to the propagating direction, such kind of light is
also known as optical vortex.
Aim to explore the benefit introduced by optical vortex, we have
proposed and demonstrated several photonic integrated devices. In
this article, some representative devices of our recent work would
be briefly introduced. They are the integrated “Cobweb” emitter
with a wide switching range of OAM modes, integrated “Cogwheel”
emitter to generate optical superimposed vortex beam and plasmonic
vortex devices.
BIOGRAPHYDr. Xue Feng received his BS, MS and PhD degrees in
Electrical
Engineering from Tsinghua University in 1999, 2002 and 2005,
respectively. Since 2005, he has been working in Department of
Electronic Engineering, Tsinghua University, Beijing, China. His
major research interest is focused on micro/nano-structure
optoelectronics, silicon photonics, and integrated optoelectronic
devices. As author and co-author, he has published more than 100
journal or conference papers.
Xue FengTsinghua University,
China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Invited Talks
Note
- 18 -
Session 1
China Silicon Photonics Platform in a Multi Project Wafer
Service
ABSTRACTRapid progress has been made in recent years in the
field of silicon
photonics in China. Foundry processes now become an essential
issue in the whole design and fabrication flow. Shared shuttle run
services are ideal for rapid and relatively inexpensive
prototyping. We present the silicon photonic platform in China that
offers monolithically integrated active and passive silicon
photonics devices through the MPW (multi-project wafer) service. A
great number of devices have been demonstrated in this platform,
which include low-loss waveguides, efficient grating couplers,
passive optical devices, high-speed modulators and germanium
waveguide photo-detectors.
BIOGRAPHYJunbo Feng received the B.E. and Ph.D. degrees from
Huazhong
University of Science and Technology, China in 2004 and 2009,
respectively. He is currently a senior engineer in the 38th
Institute of China Electronics Technology Group Corporation. His
research topics focus on silicon photonics and optical integration
technologies. He studied in the Electronic Engineering Department
of Georgia Tech. from January 2007 to June 2008. After that, he
continued his research in Peking University and became a post
doctor in Tsinghua University until 2011. He has authored more than
30 journal and conference publications and a book chapter, and
owned more than 10 patents. He presided over 5 national and
provincial projects in the past five years. He obtained Youth
Talent Support Program and First Class Prizes of the State
Scientific and Technological Progress Award of CETC38.
Junbo FengChina Electronics Technology Group Corporation,
China
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The 9th International Conference on Information Optics and
PhotonicsSession 1——Oral Reports
- 19 -
Sess
ion
1
CIOP-2017-0773 Relative Intensity Noise of an InAs/GaAs Quantum
Dot Laser Epitaxially Growing on Germanium
Cheng Zhou1, Yueguang Zhou2, Chunfang Cao3, Jiangbing Du1, Qian
Gong3, Cheng Wang21 State Key Laboratory of Advanced Optical
Communication Systems and Networks, Department of Electronic
Engineering, Shanghai Jiao Tong University; 2 School of Information
Science and Technology, ShanghaiTech University; 3 State Key
Laboratory of Functional Materials for Informatics, Shanghai
Institute
of Microsystem and Information Technology, Chinese Academy of
Sciences
Integration of photonic circuits on the CMOS-compatible silicon
(Si) platform is increasingly demanded for cost-effective
applications in data centers, access networks, and supercomputers.
Nowadays, a large variety of Si-based optical modulators,
detectors, and passive photonic devices have been successfully
demonstrated. However, it remains challenging to monolithically
integrate semiconductor lasers on Si. Fortunately, III-V quantum
dot (Qdot) lasers are weakly sensitive to growth defects arising
from the lattice mismatch between the III-V compounds and Si, and
epitaxially-grown InAs/GaAs Qdot lasers on germanium (Ge), Ge-Si,
and Si were reported in recent years. It was shown that the static
performances including the lasing threshold and the output power
were slightly degraded in comparison with their counterparts grown
on the GaAs substrate, which was attributed to the high density of
threading dislocation defects. However, there are few studies of
the defect impacts on the dynamical characteristics. Among the
laser dynamics, the relative intensity noise (RIN) increases the
bit error rate during the data transmission and hence limits the
maximum communication rate.
In this work, we report the RIN properties of an InAs/GaAs Qdot
laser epitaxially grown on the Ge substrate. The laser was grown on
a Ge [100] wafer with 6° miscut towards [111] plane, using the
gas-source molecular beam epitaxy technique. A GaAs buffer layer
grew on the Ge substrate, followed by the Qdot laser structure with
an active region consisting of five-stacked InAs Qdot layers.
Ridge-waveguide laser diodes were fabricated with cavity length of
4.4 mm and ridge width of 6.0 μm. Both cavity facets were
as-cleaved. During the experiment, the laser temperature is kept
constant at 20 ℃ using a thermo-electric cooler. The lasing
threshold is 300 mA, and the optical spectrum peaks around 1045 nm.
In the measurement of the laser’s RIN, the background thermal noise
and the photodiode shot noise are carefully removed.
Above threshold, the RIN of Ge-based Qdot laser is around -90.0
dB/Hz for frequencies less than 0.5 GHz, and it decreases to be
lower than -115.0 dB/Hz for frequencies of 4.0–6.0 GHz. The high
RIN at the low frequencies is due to excess noises arising from the
current source, the thermal fluctuation and the multimode
partitioning effect. The RIN exhibits a peak around 1.0 GHz owing
to the relaxation oscillation resonance. In addition, the RIN shows
another peak around 9.0 GHz, which is not common in the RIN
spectrum of semiconductor lasers. This phenomenon can be attributed
to the split of the longitudinal cavity modes resulting from the
Qdot size fluctuations. Beyond 12.0 GHz, the RIN remains constant
and lower than -115.0 dB/Hz. Increasing the bias current reduces
the RIN down to a minimum level of about -120.0 dB/Hz. In contrast,
an InAs Qdot laser growing on the GaAs substrate using the same
layer structure and the same growth technique exhibits a minimum
RIN of -135.0 dB/Hz. That is, the RIN performance of the Ge-based
Qdot laser deteriorates by about 15 dB/Hz, which is mainly due to
the growth dislocation defects.Key words: silicon photonics;
semiconductor lasers; quantum dots; fluctuations, relaxations, and
noise
CIOP-2017-1792 Measure and Correct Orbital Angular Momentum
Spectra of Light Beams
Peng Zhao, Xue Feng, Yidong HuangDepartment of Electronic
Engineering, National Laboratory for Information Science and
Technology, Tsinghua University
In 1992, Allen et al. established the relation between light
beam with an azimuthal phase distribution of exp(ilφ) and the
orbital angular momentum (OAM), while the integer number of l names
as the OAM order or the topological charge and the carried OAM is
lħ per photon. OAM can be employed in plenty applications, such as
optical communication, quantum information processing and optical
imaging, since it provides an infinite and additional dimension of
light. In such applications, measuring OAM spectrum of light is
necessary, however, although many methods have been proposed,
several issues are still not well addressed, such as sensitivity to
the tilt of light and lack of relative phases between OAM spectrum
coefficients. To obtain the whole information carried by the OAM
light beam, the OAM spectrum has to be measured in terms of
intensity and phase. Thus, it is necessary to measure the complex
optical field distribution. In this work, an interference method is
proposed and demonstrated to measure the complex optical field of a
light beam. The scheme consists of a laser source operating at 1550
nm, a spacial light modulator (SLM) for generating objective light
beams under test, an M-Z interferometer and a charge coupled device
(CCD) camera for measuring the interference patterns. With the
measured light field, the complex OAM spectrum of light can be
obtained by mode matching. Furthermore, the small tilt angle of the
objective light can be extracted from the field. Then with the
obtained angle tilt, the dispersion of the OAM spectrum due to the
tilt can be corrected.Key words: orbital angular momentum;
interference; optical field
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