Semiconductors For Room-Temperature Radiation Detector ...assets.cambridge.org/97811074/09507/frontmatter/9781107409507… · an ultra low noise preamplifier for room temperature
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Semiconductors For Room-TemperatureRadiation Detector Applications
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
This publication is in copyright. Subject to statutory exceptionand to the provisions of relevant collective licensing agreements, no reproduction of any part may take place without the written permission of Cambridge University Press.
This publication has been registered with Copyright Clearance Center, Inc.For further information please contact the Copyright Clearance Center,Salem, Massachusetts.
First published 1993 First paperback edition 2012
Single article reprints from this publication are available throughUniversity Microfilms Inc., 300 North Zeeb Road, Ann Arbor, mi 48106
CODEN: MRSPDH
isbn 978-1-107-40950-7 Paperback
Cambridge University Press has no responsibility for the persistence oraccuracy of URLs for external or third-party internet websites referred to inthis publication, and does not guarantee that any content on such websites is,or will remain, accurate or appropriate.
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
INVESTIGATION OF DEEP LEVELS IN X-RAY DETECTOR MATERIAL WITHPHOTO INDUCED CURRENT TRANSIENT SPECTROSCOPY (PICTS) 231
C. Eiche, M. Fiederle, J. Weese, D. Maier, D. Ebling, and K.W. Benz
MATHEMATICAL MODEL FOR THE SIMULATION OFCRYSTALLIZATION OF CdTe IN A VERTICAL BRIDGMAN FURNACE 237
Ch. Steer, M. Hage-Ali, and P. Siffert
PART IV: DIAMOND
*ELECTRICAL PROPERTIES OF NATURAL Ila DIAMONDS USING PHOTO-AND PARTICLE EXCITATION 245
L.S. Pan, S. Han, D.R. Kania, K.K. Gan, S. Zhao, H. Kagan, R. Kass,R. Malchow, F. Morrow, W.F. Palmer, C. White, S.K. Kim, F. Sannes,S. Schnetzer, R. Stone, G.B. Thomson, Y. Sugimoto, A. Fry, S. Kanda,S. Olsen, M. Franklin, J.W. Ager III, and P. Pianetta
DIAMOND DOPING BY LOW ENERGY ION IMPLANTATION DURINGGROWTH 251
K.D. Jamison, H.K. Schmidt, D. Eisenmann, and R.P. Hellmer
ELECTRICAL PROPERTIES IN CVD DIAMOND FILMS 257S. Zhao, K.K. Gan, H. Kagan, R. Kass, R. Malchow, F. Morrow,W. Palmer, C. White, L.S. Pan, S. Han, D. Kania, M. Piano,M. Landstrass, M. Lee, S. Kim, F. Sannes, S. Schnetzer, R. Stone,G. Thomson, Y. Sugimoto, A. Fry, S. Kanda, and S. Olsen
EXPERIMENTAL RESULTS IN PICOSECOND AND SUBPICOSECONDRANGE OF Ila TYPE DIAMOND DETECTOR IN X-UV, VISIBLE ANDIR FIELDS 263
M. Nail, Ph. Gibert, J.L. Miquel, and M. Cuzin
CHARACTERIZATION OF CVD DIAMOND FILMS BY OPTICALSPECTROSCOPIES 275
Joel W. Ager III, Sung Han, Ron S. Wagner, Lawrence S. Pan,D.R. Kania, and Stephen M. Lane
FAST DIAMOND PHOTOCONDUCTORS 281T. Pochet, B. Brullot, R. Galli, and C. Rubbelynck
RADIATION DOSIMETRY VIA THE RADIO-PHOTOLUMINESCENCE OFSYNTHETIC DIAMOND 287
Rex J. Keddy, Tom L. Nam, and Shawn Araikum
X-RAY STUDIES OF SYNTHETIC RADIATION-COUNTING DIAMONDS 293Andrew Yacoot, Moreton Moore, and Anthony Makepeace
ELECTRICAL MOBILITY AND CARRIER LIFETIME INSINGLE-CRYSTAL, ISOTOPICALLY PURE TYPE Ila SYNTHETICDIAMOND 299
L.S. Pan, S. Han, D.R. Kania, and W. Banholzer
SUB-NANOSECOND DETECTION OF HEAVY IONS USINGSINGLE-CRYSTAL, NATURAL TYPE Ila DIAMOND 305
Sung Han, Stanley G. Prussin, Lawrence S. Pan, Stephen M. Lane,Don R. Kania, Ronald S. Wagner, and Caleb R. Evans
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
*NEW COMPOUND SEMICONDUCTOR MATERIALS FOR NUCLEARDETECTORS 319
Michael R. Squillante, John Zhang, Chuxin Zhou, Paul Bennett, andLarry Moy
IMPROVEMENTS IN THALLIUM BROMOIODIDE PHOTODETECTORS FORSCINTILLATION SPECTROMETERS 329
J.G. Zhang, L. Cirignano, K. Daley, and M.R. Squillante
INVESTIGATION OF LEAD IODIDE CRYSTALS FOR USE AS HIGHENERGY SOLID STATE RADIATION DETECTORS 335
Dominique C. David, R.B. James, H. Feemster, R. Anderson,A.J. Antolak, D.H. Morse, A.E. Pontau, H. Jayatirtha, A. Burger,X.J. Bao, T.E. Schlesinger, G.S. Bench, and D.W. Heikkinen
VARIABLE ANGLE SPECTROSCOPIC ELLIPSOMETRY STUDIES OF Hgl2 341Huade Yao and Blaine Johs
*PHYSICAL-CHEMICAL CONSIDERATIONS FOR SEMICONDUCTOR ROOM-TEMPERATURE RADIATION DETECTORS 347
M. Schieber, H. Hermon, and M. Roth
PROCESSING AND CHARACTERIZATION OF HgBrxI9 x RADIATIONDETECTORS "" 357
C. Zhou, M.R. Squillante, L.P. Moy, and P. Bennett
STUDIES OF CHARGE COLLECTION IN GaAs RADIATION DETECTORS 363K. Berwick, M.R. Brozel, CM. Buttar, M. Cowperthwaite, and Y. Hou
FAST GaAs PHOTOCONDUCTOR RESPONSES TO SUBNANOSECONDPROTON PULSES 369
B. Brullot, R. Galli, X. Lecat, C. Rubbelynck, and T. Pochet
ANALYSIS OF DEEP LEVELS IN GaAs DETECTOR DIODES USINGIMPEDANCE SPECTROSCOPY 375
C. Eiche, M. Fiederle, J. Weese, D. Maier, D. Ebling, J. Ludwig,and K.W. Benz
EXPERIMENTAL RESULTS FROM 7-IRRADIATED GaAs CRYSTALSGROWN WITH DIFFERENT TECHNIQUES 381
W. Bencivelli, E. Bertolucci, U. Bottigli, A. Cavallini, S. D'Auria,C. Da V&, C. Del Papa, M.E. Fantacci, V. Rosso, A. Stefanini, andG. Stefanini
PART VI: II-VI DETECTOR TECHNOLOGY
•IMPROVED QUALITY OF BULK II-VI SUBSTRATES FOR HgCdTe ANDHgZnTe EPITAXY 391
Sanghamitra Sen and John E. Stannard
EXCESS CARRIER LIFETIMES IN (HgCd)Te GROWN BY MOCVDINTERDIFFUSED MULTILAYER PROCESS 403
P. Mitra, T.R. Schimert, Y.L. Tyan, A.J. Brouns, and F.C. Case
MAPPING OF DEFECTS IN METAL-SEMICONDUCTOR-METAL (MSM)DETECTORS IN Hg l Cd Te BY NUCLEAR MICROPROBE 411
Patrick W. Leech, Sean P. Dooley, and David N. Jamieson
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
The first Symposium on Semiconductors for Room-Temperature Radiation DetectorApplications was held at the 1993 MRS Spring Meeting in San Francisco, California.The purpose of the symposium was to provide a forum for presenting and evaluatingthe most recent results on semiconductor radiation detectors for utilization in the energyrange of a few eV to 1 MeV. The primary emphasis of the papers was on developingx-ray and gamma-ray detectors which combine the advantages of room temperatureoperation with the excellent energy resolution of cryogenically cooled spectrometers.By eliminating the cryogen, new radiation-sensing instruments can be manufactured thatare portable, easy to operate, and relatively maintenance-free.
The symposium was organized into technical sessions on mercuric iodide, cadmiumtelluride, diamond, cadmium zinc telluride, silicon, new detector materials, and deviceapplications. The discussion on device performance indicated that the quality of room-temperature semiconductor x-ray and gamma-ray detectors now meet the specificationsrequired for several applications in spectroscopy, environmental monitoring, mineralexploration, medical instrumentation, imaging, space, and industrial quality control.Progress was also demonstrated in the processing of the electronic pulses to improve theenergy resolution of the detectors, and in the availability of compact circuits to allowpackaging of field instruments which have significantly less weight compared toconventional technology. New results were reported on the relationships betweenmaterial properties and detector quality, and on improved techniques for purification,crystal growth, and processing technology. These measurements generated confidencethat continued advances in the performance of room-temperature semiconductordetectors and an expanded commercial market for these detectors are forthcoming.
The symposium was well attended, and the international participation was especiallystrong. One hundred and six presentations representing work from twenty one countrieswere given orally or as posters. This proceedings volume contains seventy-six peer-reviewed papers. The symposium organizers hope that it will serve as an importantupdate on the status of the technology and as a useful reference source for othersworking in the field.
The organizers would also like to thank the following organizations for their supportof this symposium:
Aurora Technologies CorporationeV Products (a division of II-VI Inc.)Kurt J. Lesker CompanyOxford Nuclear Measurements Group
Radiation Monitoring DevicesSandia National LaboratoriesTN Technologies, Inc.Xsirius, Inc.
Ralph B. JamesT.E. SchlesingerPaul SiffertLarry Franks
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Volume 284—Amorphous Insulating Thin Films, J. Kanicki, R.A.B. Devine,W.L. Warren, M. Matsumura, 1993, ISBN: 1-55899-179-4
Volume 285—Laser Ablation in Materials Processing—Fundamentals and Applications,B. Braren, J. Dubowski, D. Norton, 1993, ISBN: 1-55899-180-8
Volume 286—Nanophase and Nanocomposite Materials, S. Komarneni, J.C. Parker,G.J. Thomas, 1993, ISBN: 1-55899-181-6
Volume 287—Silicon Nitride Ceramics—Scientific and Technological Advances,I-W. Chen, P.F. Becher, M. Mitomo, G. Petzow, T-S. Yen, 1993,ISBN: 1-55899-182-4
Volume 288—High-Temperature Ordered Intermetallic Alloys V, I. Baker,J.D. Whittenberger, R. Darolia, M.H. Yoo, 1993, ISBN: 1-55899-183-2
Volume 289—Flow and Microstructure of Dense Suspensions, L.J. Struble,C.F. Zukoski, G. Maitland, 1993, ISBN: 1-55899-184-0
Volume 290—Dynamics in Small Confining Systems, J.M. Drake, D.D. Awschalom,J. Klafter, R. Kopelman, 1993, ISBN: 1-55899-185-9
Volume 291—Materials Theory and Modelling, P.D. Bristowe, J. Broughton,J.M. Newsam, 1993, ISBN: 1-55899-186-7
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information
Volume 307—Applications of Synchrotron Radiation Techniques to Materials Science,D.L. Perry, R. Stockbauer, N. Shinn, K. D'Amico, L. Terminello,1993, ISBN: 1-55899-203-0
Volume 308—Thin Films—Stresses and Mechanical Properties IV, P.H. Townsend,J. Sanchez, C-Y. Li, T.P. Weihs, 1993, ISBN: 1-55899-204-9
Volume 309—Materials Reliability in Microelectronics III, K. Rodbell, B. Filter,P. Ho, H. Frost, 1993, ISBN: 1-55899-205-7
Volume 310—Ferroelectric Thin Films III, E.R. Myers, B.A. Tuttle, S.B. Desu,P.K. Larsen, 1993, ISBN: 1-55899-206-5
Volume 311 — Phase Transformations in Thin Films—Thermodynamics and Kinetics,M. Atzmon, J.M.E. Harper, A.L. Greer, M.R. Libera, 1993,ISBN: 1-55899-207-3
Volume 312—Common Themes and Mechanisms of Epitaxial Growth, P. Fuoss,J. Tsao, D.W. Kisker, A. Zangwill, T.F. Kuech, 1993,ISBN: 1-55899-208-1
Volume 313—Magnetic Ultrathin Films, Multilayers and Surfaces/MagneticInterfaces—Physics and Characterization (2 Volume Set), C. Chappert,R.F.C. Farrow, B.T. Jonker, R. Clarke, P. Griinberg, K.M. Krishnan,S. Tsunashima/E.E. Marinero, T. Egami, C. Rau, S.A. Chambers,1993, ISBN: 1-55899-211-1
Volume 314—Joining and Adhesion of Advanced Inorganic Materials, A.H. Carim,D.S. Schwartz, R.S. Silberglitt, R.E. Loehman, 1993,ISBN: 1-55899-212-X
Volume 315—Surface Chemical Cleaning and Passivation for SemiconductorProcessing, G.S. Higashi, E.A. Irene, T. Ohmi, 1993,ISBN: 1-55899-213-8Prior Materials Research Society Symposium Proceedings
available by contacting Materials Research Society
Cambridge University Press978-1-107-40950-7 - Materials Research Society Symposium Proceedings: Volume 302:Semiconductors for Room-Temperature Radiation Detector ApplicationsEditors: R. B. James, T. E. Schlesinger, Paul Siffert and Larry FranksFrontmatterMore information