/ SEMICONDUCTORS AND SEMIMETALS VOLUME 22 Lightwave Communications Technology Volume Editor W. T. TSANG AT&T BELL LABORATORIES HOLMDEL, NEW JERSEY PartD/>^ Photodetectors 1985 ® ACADEMIC PRESS, INC. (Harcourt Brace Jovanovich, Publishers) Orlando San Diego New York London Toronto Montreal Sydney Tokyo
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SEMICONDUCTORS AND SEMIMETALS
VOLUME 22 Lightwave Communications Technology
Volume Editor
W. T. TSANG A T & T BELL LABORATORIES
HOLMDEL, NEW JERSEY
P a r t D / > ^ Photodetectors
1985
® ACADEMIC PRESS, INC. (Harcourt Brace Jovanovich, Publishers) Orlando San Diego New York London Toronto Montreal Sydney Tokyo
Contents
LIST OF CONTRIBUTORS vii
TREATISE FOREWORD ix
FOREWORD xi PREFACE xv
Chapter 1 Physics of Avalanche Photodiodes
Federico Capasso
I. Introduction 2 II. Theory of Impact Ionization 3
III. Avalanche Multiplication and Measurement of Ionization Rates 66 IV. Avalanche Photodiodes with Enhanced Ionization Rate Ratios
and Solid-State Photomultipliers 105 References 168
Chapter 2 Compound Semiconductor Photodiodes
T. P. Pearsall and M. A. Pollack
I. Introduction 174 II. Compound Semiconductor Photodiode Principles 186
III. Compound Semiconductor Photodiode Properties 198 IV. Integrated Photodiode Devices 225
References 241
Chapter 3 Silicon and Germanium Avalanche Photodiodes
Takao Kaneda
I. Introduction 247 II. Design Considerations 249
III. Silicon Avalanche Photodiod.es 263 IV. Germanium Avalanche Photodiodes 289 V. Minimum Detectable Power 320