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SELECTED REFERENCES
Ion Implantation
Carter, G., W.A. Grant Ion Implantation of Semiconductors, London 1976 Dearneley, G., .l.R. Freeman, R.S. Nelson, .1. Stephen Ion Implantation Technology Nort.h Rolland, Amsterdam, 1973 Hirvonen, .l.K. Ion Implantation Academic Press, New York 1981 Mayer, J.W., L. Eriksson, J .A. Davies Ion Implantation in Semiconductors Academic Press, New York, 1970 Ryssel II., I. Ruge Ion lInplantation John Wiley & Sons, Chichester 1986 Townsend, P.D., J .C. Kelly, N .E.W. Hartley Ion Implantation, Sputtering and their Applications, London, 1976 Williams, J .S., J.M. Poate eds. Ion Implantation and Beam Processing, Academic Press, New York (1984) Ziegler, J.F. editor Handbook of Ion Implantation Technology North Holland Amsterdam, 1992 Ziegler, J.F. editor Ion Imp/antation: Science and Technology Academic Press, Orlando Florida, 1984
Solid State Devices
Baliga, B.J., Modem Powe7' Devices Wiley, New York, 1987 But.cher, P.N., N.H. March, M.P. Tosi Crystalline Semiconductor Mate1·jals and Devices Plenum Press, New York, 1986 Ghandhi, S.K. VLSI Fabrication Principles, Wiley, New York, 1983 Levy, R.A. editor Microelectronic Materials and Processes, Kluwer, Dordrecht, The Netherlands, 1989 Mayer, J.W., S.S. Lau Electronic Materials Science for Integrated Circuits in Si and GaAs Macmillan Publishing Company, New York, 1990 Muller, R.S., T.I. Kamins Device Electronics for Integrated Circuits, second edition, Wiley, New York, 1986 Murarka, S.P., M.C. Peckerar Electronic Materials Science and Technology Academic Press, London, 1989 Sah, C.T" Fundamentals of Solid State Electronics World Scientific, Singapore 1991 Streetman, B.G., Solid State Electronic Devices third edition, Prentice - Rall Englewood Cliffs, N.J., 1990 Sze, S.M. Semiconduc/01' Devices, Physics and Technology Wiley, Singapore 1985 Sze, S.M. eds, VLSI Technology 2nd edition Me Graw-Hill, New York, 1983 Wolf, S., R.N, Tauber Silicon Processing for the VLSI Era Lattice Press, Sunset Beach. California 1986
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level energies for platinum level energies for gold
Activation energy Activation energy for formation and migration Alpha particle Amorphization threshold, energy dependence
dose dependence temperature dependence
Amorphous, surface layer subsurface layer thickness zones
Amorphous-layer under a mask, regrowth Amphoteric impurity Analogue devices Annealing,
of amorphous zones of boron implants of Be-implanted GaAs of Cd-implanted GaAs of Mg-implanted GaAs of Si-implanted GaAs of Si-implanted InP
Anodic oxidation Anomalous B diffusion Antisite complexes
235 236 236
200, 201 33, 50
9
293 292, 293
180 197 297
152, 156 150, 151, 213 151, 155, 156
135, 174 71 71
149, 157 186, 187, 188, 189
321 302
19 183, 184
190, 191, 192, 193 321, 323
323 323 321 327
239, 240 275 323
380 Ion Implantation: Basics to Device Fabrication
Ar ion laser Arrhenius plot Arsenic precipitates As, arsenic in Si As-V pairs Auger recombination Avrami-lohnson-Mehl B Profiles for (100) channeling Background level for SIMS analysis Balling-up of the native oxide Band narrowing Bandgap discontinuity Base of bipolar transistor Base transit time Beam, divergence
neu traliz ation Bernas ion source Bethe-Bloch treatment Bevel edge Bi, bismuth in Si Biasing configurations BICMOS Bidimensional dopant concentration profiles Binary Collision Approximation (BCA) Binding energy Bipolar devices Bipolar junction transistor Bipolar transistor, n-p-n
fabrication sequence of Bistable memory devices Bit flip Bit line Bits Black-body radation Bohr potential Boltzmann Transport Equation (BTE) Bonded process for silicon on insulator Born-Mayer potential Boron precipitates Bragg conditions Breakdown of the oxide Breakdown voltage Built-in potential Bulk diffusivity Burgers vector Buried collectors Buried compound layers Buried COSi2 Buried dielectric layer
70 160, 161 280, 281
8 149 304 158 108 223 308 304 333
17, 260 305, 311
246 64 37 91
231, 233 8
302 312 256
119, 120 8
260 17,18,255,301, 302
18 20
332 297 262 262
60, 199, 200 120 119 339 120 191 256
74 12, 65, 189, 287
11 279 144
260 24, 334
343 316
Index
Buried layer for bipolar collector Calibration curve for SRP Calibration curve for temperature sheet resistance values Capping layer Capping oxide Carbon-damage in teraction Carrier concentration
Carrier spilling Carrier traps Cascade volume Channel doping Channel stop Channel stop formation Channeling Charge coupled devices (CCD) Charge exchange canal Charge to breakdown Charged state ions, B, P Chemical vapor deposition Climb of dislocation Clustering of point defects CMOS,
inverter Coheren t precipitates Collector of bipolar transistor Collector/base depletion region transit time Collision cascade Common-emitter configuration Compensation mechanism Compressive stress Conduction band Contact potential Contaminants Contour map Cooling vacuum system
CoSi2 Cosmic rays Covalent bond Critical angle for channeling Critical value for secondary defect formation Cromatic aberration Cross section Crystalline defects Crystallization heat Crystallization under ion beam irradiation Current gain
Cut-off frequency iT Czokralsky grown silicon b-doped
381
19 229 204
205, 319, 324 268 216 238
229 330 155 343
15, 285, 287 299
28, 102, 103, 105, 241 294
43 65 32
315, 335 196 214
5, 144, 208 282, 286
211 17,24,27,260,301
305 132, 169
303 322 186
8, 10 11 73 70 61
31, 316 297
8
104, 105, 106, 108 213, 214
255 243, 253
129 150 163 303
303, 305 181, 208
356
382
Damage, dose rate dependence dopant dependence energy density dependence levels
Damage-related hole traps Dangling bond Data smoothing for SRP Dechanneled fraction
Ion Implantation: Basics to Device Fabrication
19, 25 157 149 140 331 332 170 229 111
Dechanneling of point defects, dislocation, stacking faults Deep level
250, 251, 252 316
Deep level damage Defect engineering Defect lifetime Defect mobility
212, 328 215 196 154
Delay time for the interfacial oxide rupture Depleted region, width 10,
310 11, 24
electric field Depletion-layer width Depletion-mode device Deposited energy distributions Depth perception of RBS Depth profiling Depth resolution for SIMS analysis Detection limits for SIMS analysis Device isolation Dielectric layer Dielectric stress Diffusion, of dopants
coefficien t of electrons coefficien t of holes
of Al processes of metallic impurities
Digital devices Digital logic gates Direct band Direct energy gap Direct recom bination Disc system, for dose control
scanner Dislocation Dislocation clim b Dislocation lines Dislocation loop Dislocation removal rate Displaced silicon at.oms Displacement t.hreshold energy Displacement.s Per Atom (DPA)
11 267
14, 262 136 244 222 224 223 317 263
64 205 304 304 204 235 235 302 302
13 8
13 57 58
143, 180, 186, 250 195
26, 173 173,186, 192,196,211,212,214,215,278,320
196, 197, 198 140, 212
132 138
Index
Divacancy Donor impurity Dopant species Double diffused drain Double implant techique Drain of MOSFET Drain-ind uced-barrier-lowering DRAM Duoplasmatron source Dynamic annealing Early effect Edge dislocation Einzel lens Elastic collision Elastic stopping power Elastomer Electron -hole recom bina tion Electron,
affinity diffusion length drift velocity in Si, GaAs, InP mobility in GaAs mobility in InP mobility in Si paramagnetic resonance shower
Electronegative elements Electronic energy loss Electronic stopping,
for channeled particles Electropositive elements Electrostatic lens Elongated dislocations Emissivity Emitter of bipolar transistor Emitter delay Emitter-Coupled Logic (ECL) Emitter/base depletion region transit time Encapsulant End of range damage End station Energy contamination, P
As BF3
Energy gap Engineering defect Enhancement mode MOSFETs Enhancement-mode devices Epitaxial regrowth in GaAs
2,
383
142 9 6
271 70
14, 15, 23, 261 269
13,261,262,341 39
155, 182,317 304 144
49 80 81 61 17
7, 8 41
304
325 9, 316, 326
326 9
217 58, 66
220 87
80, 88 109, 110
220 49
214 201, 202, 203, 205
17,24,27,260, 301 305 302 305 320 182
33 51 52
52, 53 325 301
15, 282 262 318
384
EPROM Er in Si, levels Extended defects Extrinsic, base region
dislocation loops point defects semiconductors stacking fault
Faraday cup Feeding-in Fermi level Fermi-Dirac distribution Ferroelectrics
Field oxide spacing Field-oxidation Fixed-oxide charge Flash Eprom Floating Zone (FZ) wafers Fluence Forward bias Forward current Forward-active mode Four point probe Free carrier absorption Free energy of amorphous Si phase Freeman ion source Frenkel defect Frenkel pair Fully depleted FET Fully depleted mode GaAs Gate Gate floating Gate oxide Gaussian distribution Generation centers Getter Gettering, centers
Hall coefficient Hall effect Halogen lamp Hard-sphere potential Hartee-Fock-Slater atomic charge distribution Head-on collision Heat capacity Heat flow equation Heat of formation of Si02 Heavy metals He-Ne laser Heterogeneous amorphization Heterogeneous nucleation of damage Heterojunction Bipolar Transistors (HBT) Heterojunction FET Heterojunctions Hexagonal silicon phase Hexagonal Si interstitials High Electron Mobility Transistors (HEMT) High resolution transmission electron microscopy High speed bipolar transistor Hole Hopping conduction Hot carrier Hot electrons Hot Implants IGFET III-V compound semiconductors Impact ionization Implant-isolated GaAs MESFET Implant through a mask Impurity band Indirect band gap Inelastic collision InP Insulated Gate Bipolar Transistor (IGBT) Intelligent power,
vertical Interface-trapped charges Interfacial bond In ternal "get tering" Internal electric fields Interstitials Intrinsic base Intrinsic point defects In trinsic silicon Intrinsic stacking fault Inverse square potential In version condition
385
236, 237 236 , 237
200 82 87 81
200, 201 59
334 75 70
157, 158 157, 158
354, 355, 356 353
31 153, 162, 163
143
353, 354 217
301, 355 7, 8 331 259
28, 270 35, 152, 213
13 3, 315
270
116 116
10 8, 13
80, 137 315 288
5 6
265 176
341 333 141 306 142
8 145, 146, 173
82, 83, 86 265
386 Ion Implantation: Basics to Device Fabrication
Inversion layer Inverter Ion analyzing mechanism Ion Beam Induced Epitaxial Amorphization (IBIEA) Ion Beam Induced Epitaxial Crystallization (IBIEC),
parameters LOCal Oxidation of Silicon (LOCOS) Low pressure vapor phase epitaxy Magnetic analyzer Magnetic rigidity Magneto electrical effects Majority carriers Market device Market share MARLOWE code Mask Mass spectrum Mass resolution Maximum penetration Mechanical lapped MESA isolated CMOS structure MESFET Mesh for simulation Metal buried layer Metal contamination Metal gate transistor Metal layers Metal probes Metal-base Metal-dopant compounds Metallic, contamination
impurities Microtwins Millimeter wave devices Minority carrier lifetime Misfit dislocations Mobile ionic charges Mobility of hole, electron Modulation doped Molecular Beam Epitaxy (MBE) Molecular Dynamics Moliere potential Monolayer Monte Carlo Moore law
387
3, 315 271
43,45 91 35
323 249
53 84 90
285, 295 355
45 46
237 8 1 1
123, 124, 125, 139, 293 23, 129, 189
47, 48, 220, 221 48
108 254 341
17, 325 129 316 294 356 316 227
355, 356 280
27 13
181 325
260, 287 31
265 8, 9, 237, 238
353 315, 332, 356
119 120 245
119, 120, 171, 172 27
388 Ion Implantation: Basics to Device Fabrication
MOS MOS capacitance MOSFET MOSFET threshold voltage Multi-Quantum Wells (MQW) Murphy's law n-type,
Positron annihilation Power devices Power electronics Power law potential Power metal-oxide-semiconductor field-effect transistor Power supplied Preamorphization Precipitates Precipitation Precipitation of oxygen Preferential sputtering Primary damage Programmable SRAM Projected range,
of B, P, As and Sb in Si Punch-through effect Punch-through-stopper Pyrometer Quaternary compound semiconductors Radio frequency voltage Random Access Memory (RAM) Range distribution of B, P, As and Sb in Si Range of implanted ions Rapid Thermal Annealing (RTA) ,
apparatus Rapid Thermal Processing (RTP)
389
40 38
204 316, 355, 356, 358
249 23, 29
315 340 107 199
75,76 70
99 261 278
197, 250 230, 267
279 337
260, 301, 306 205
13, 290 337 217 260 287
84,85 289 287 274 143
179, 186 301 225
25 293
80,92 93
269 272
199, 202, 203 315
43,44 262
93 19, 80
29, 198, 214, 275, 325 199
29, 198
390 Ion Implantation: Basics to Device Fabrication
Read Only Memory (ROM) Row potential Realignment of the polylayer Recombination-generation centers Reflection Reflectivity Refresh delay time Refresh test Regrowth velocity of the amorphous layer,
Relaxation time Resistivity of Silicon Retrograde well Revers bias Revers breakdown Revers current Reverse recovery charges Reverse recovery time trr Road-shaped defects Rod-like defects Row line Rutherford Backscattering Spectrometry (RBS),
radius Screw dislocation Secondary defects Secondary electron suppressor Secondary ion escape depth Secondary Ion Mass Spectrometry (SIMS) Secondary ion signal Secondary ion yield Secondary Neutral Mass Spectrometry (SNMS)
of buried amorphos layer Solid solubility limit Solid solubility of Au Solid state detector Source Source/drain junction depth Spherical aberration Spherical aberration coefficient Spiking Spreading resistance Spreading Resistance Profilometry (SRP) Sputtered ions Spu ttering Sputtering ion source Spu ttering rate Sputtering yield Stacked cell Stacking fault Standard deviation
391
179, 210, 286 192, 197
196 301
32 30, 334, 339
28, 29, 75, 205, 260 203 236
142, 213 31
195, 203, 276 3, 277, 343
278 3, 4, 284
180 209 180 191 263 316
31 93, 94, 95, 293
95 95
294 324 297
297, 334 174, 181, 185, 189,200,249
181, 182 187,281,301
288 242
13, 14, 15, 261 274 255 256 341 118
218, 227, 231 219 100
42 219
101,219,221 263
143, 192 , 194, 250, 320 80, 92
392 Ion Implantation: Basics to Device Fabrication
Stefan-Boltzmann constant Storage capacitor Straggle Strain Strain field Stress induced precipitation of dopant Stripping canal Sub cascade Subthreshold current Superlattices SUPREM Surface mobility Surface peak Switches Switching speed of bipolar transistors Syn thesis of silicon nitride Syn thesis of stoichiometric Si3 N 4
Tandem Tandem accelerators Tandetrons Ternary compound semiconductors Therma-wave Thermal diffusion lenght Thermal expansion coefficient Thermal stress Thermocouple Thomas-Fermi function
60, 201 263
80, 92 293 320 180 280
39 155, 162
269 332
96, 126 268
246, 251 332
18 337 336
35 39 40
315 70,71
199 197, 198 197, 324
203 84
Thomas-Fermi potential 85, 86, 120 Threading dislocation 340 Threshold voltage of the MOSFET 14, 21, 259, 264, 265, 266 , 268, 285, 342, 354 Threshold-voltage adjustment of MOSFET 264 Thyristor 3 Tilt angle 112 Tilt implant 273 Transconductance 268, 342 Transient diffusion 26, 224, 275 Transistor 7 Transistor action Transistor-Transistor Logic (TTL) Transition elements as contaminants Transmission coefficen t Transmission Electron Microscope (TEM) Transport equation TRansport Ion Mass (TRIM) Trapped charged impurities Trench Trench capacitors Trench isolation TRIM.SP
301 302
74 99
252, 253 92
91, 115, 120, 133, 136, 155, 163,212, 293 265
76, 127, 128, 263, 306 263 284 121
Index
Tungsten-halogen lamps Tunneling Twin-tube Twins Twins silicon Twist angle Two-dimensional damage Two-dimensional carrier profiles Two-dimensional diffusivity Ultra Large Scale Integration (ULSI) Ultra High Vacuum Chemical Deposition (UHVCD) Universal screening function UT-MARLOWE V shaped dislocations Vacancies Vacancy loops Vacancy-interstitial pairs Valence band Van der Pauw pattern Vapor pressure of As VD-MOS Vertical punch-through Very Large Scale Integration (V LSI) circuits VLSI CMOS Voids Voltage-transfer characteristics Wafer charging Wafer cooling Wafer warpage Walton-Cockroft system Work function X-ray emission Yield Yield strength Young's modulus Ziegler-Biersack-Littmark distribution Ziegler-Biersack-Littmark potential