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SEE Testing Using Laser Irradiation With Different Characteristics
O.Mavritskiy, A.Egorov, A.Chumakov, A.Yanenko,
A.Pechenkin, D.Savchenkov, A.Petrov
National Research Nuclear University
“MEPhI”http://www.mephi.ru
Specialized Electronic Systemshttp://www.spels.ru
E-mail: [email protected]
31 Kashirskoe shosse, 115409 Moscow, Russian Federation, tel./fax: +7 (495) 324-0420
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Contents
• Main parameters of SPELS pulse laser facilities
• Experimental technique
• SEE testing results, obtained on different facilities for SRAM CY62256, compared to heavy ion testing results
• SEE testing results for SY55852UKC – high speed flip-flop CML logic IC
• National standardization of laser SEE testing
2013
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• Main parameters of SPELS pulse laser facilities
• Experimental technique
• SEE testing results, obtained on different facilities for SRAM CY62256, compared to heavy ion testing results
• SEE testing results for SY55852UKC – high speed flip-flop CML logic IC
• National standardization of laser SEE testing
2013
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Laser facilities common layout
femto-* or picosecond laser+OPG**
Attenuation unit
Focusing unit(microscope)
Visualization unit (VIS/NIR*** cameras)
Control unit(PC)
Testing unit DUT
XYZ Micro positioner
* - FEMTO-T; ** - PICO-4; *** - PICO-3;
2013
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SPELS laser facilities
Type PICO-3 PICO-4 FEMTO-T
Wavelength, m 1.064/0.532 (0.7…1.0) / (1.15 ... 2.20) 0.87
Pulse duration, ps 70 25 0.1 … 2
Pulse energy, J 7.8/3.0 20 20
Spot diameter, m2.2/1.2
TEM00
32
TEM00
Repetition rate, Hz 0* … 1000 0* … 1000 0* … 100
* - single pulse mode
2013
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2013
λ = 870 nm λ = 900 nm λ = 1000 nm
PICO-4 beam profiles for different wavelengths
Z = 1 mm (distance from focus plane)
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• Main parameters of SPELS pulse laser facilities
• Experimental techniques
• SEE testing results, obtained on different facilities for SRAM CY62256, compared to heavy ion testing results
• SEE testing results for SY55852UKC – high speed flip-flop CML logic IC
• National standardization of laser SEE testing
2013
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Experimental techniquesLaser SEE testing
Local laser irradiation technique
Focused laser irradiation technique
Heavy ion testing
1. Localization of sensitive area
2. Determination of laser threshold energy
3. Ionization response registration
4. Estimation of LET5. Estimation of cross
section
SEE cross section vs. laser energy
SEE cross section vs. LET(minimum 2 points)
Rate prediction
LET Kl. Jl
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DUT: Cypress CY62256 high-performance
CMOS static RAM
DUT test circuit diagram
2013
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SEU and SEL maps
2 nJ
1 nJ
0.5 nJ
0.4 nJ
Ionization response map
(OBIC)
Any wavelength from
0,85 …1, 06 µm range
CY62256 SRAM
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The most sensitive regions
SELSEU
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CY62256 SRAM
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SEL threshold energy vs. spot diameter dependency
= 1.0 µm. Region 4 (in the bank)
RPP approximation
line with sensitive
region dimensions
as fitting parameters
1
10
100
1000
1 10 100
Jth
, n
J
D, µm
J0
Facility type PICO-3 PICO-4
Wavelength, µm 1,06 1,00 0,90 0,85
Side of irradiation Back Front Front Front Front
Threshold energy J0, nJ 0.7 5.0 1.50 0.45 0.31
Size of sensitive area, µm2 5.0 × 21 5.0 × 22 2.6 × 30 4.3 × 19 4.3 × 20
2013
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2013
Facility type PICO-3 PICO-4
Wavelength, µm 1,06 1,06 1,00 0,90 0,85
Side of irradiation Back Front Front Front Front
LET, MeV·cm2/mg 60 80 30 35 35
Facility type PICO-3 PICO-4 FEMTO-T
Wavelength, µm 1,06 1,00 0,90 0,85 0,87
Side of irradiation Back Front Front Front Front Front
LET, MeV·cm2/mg 150 ! 30 24 20 23
SEL LET estimation for CY62256NLL
SEU LET estimation for CY62256NLL
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Focused laser testing SEU and SEL results
1,0E-06
1,0E-05
1,0E-04
1,0E-03
1,0E-02
1,0E-01
1,0E+00
0 1 2 3 4 5 6 7 8 9 10
σ, cm
2
J, nJ
SEU SEL
SEL and SEU cross-section vs. laser energy for CY62256NLLlaser facility FEMTO-T (λ = 0.870 µm)
2013
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Ion testing
IonAngle of
incidence
Energy,
MeV
Effective LET,
MeV×cm2/mg
22Ne 0° 70 6
22Ne 60° 70 14
40Ar 0° 130 16
40Ar 60° 130 33
84Kr 0° 300 41
136Xe 0° 390 69
U-400M isochronous cyclotron of FlerovNuclear Reaction
Laboratory of Joint Institute for Nuclear
Research, Dubna, Russia
Heavy ion testing
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Focused laser and heavy ion testing SEU and SEL results
SEU and SEL cross-section vs. LET for CY62256NLL.Laser facility FEMTO-T (λ = 0.870 µm); heavy ion facility U-400M
2013
1,0E-06
1,0E-05
1,0E-04
1,0E-03
1,0E-02
1,0E-01
1,0E+00
0 10 20 30 40 50 60 70 80 90
σ, c
m2
LET, MeV·cm2/mg
SEU (ion testing) SEU (laser testing)SEL (ion testing) SEL (laser testing)
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• Main parameters of SPELS pulse laser facilities
• Experimental techniques
• SEE testing results, obtained on different facilities for SRAM CY62256, compared to heavy ion testing results
• SEE testing results for SY55852UKC – high speed flip-flop CML logic IC
• National standardization of laser SEE testing
2013
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sensitive to SEU point
SEU in high speed flip-flop CML logic IC SY55852
Frontside scanning using FEMTO-T (870 nm, 200 fs)
1
10
100
1000
1 10 100
E th, n
J
D, µm
SEU threshold Eth vs. beam diameter dependence for 200 fs laser pulses
Facility FEMTO-T PICO-4
Pulse duration 70 fs … 1.5 ps 20 ps
Wavelength 870 nm 870 nm
SEU resultSame SEU threshold
(≈1,5 nJ)No SEU ! up to 15 nJ
(damage energy)
(Minimum output rise time 35 ps)
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Conclusions
2013
National Research Nuclear University “MEPhI” Specialized Electronic Systems
31 Kashirskoe shosse, 115409 Moscow, Russian Federation, e-mail: [email protected] , fax: +7 (495) 324-0420
Testing the same SRAM on three laser facilities showed:
• Within the same facility: SEL and SEU – correlate!
• On different facilities: SEU parameters – differ by several times:
Influence of spot size effect (beam quality & spot size are of a great importance!)
Various optical losses for different wavelengths
Influence of IC elements’ dynamic characteristics
• Focused laser testing satisfactory correlates with heavy-ion testing
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• Main parameters of SPELS pulse laser facilities
• Experimental techniques
• SEE testing results, obtained on different facilities for SRAM CY62256, compared to heavy ion testing results
• SEE testing results for SY55852UKC – high speed flip-flop CML logic IC
• National standardization of laser SEE testing
2013
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2013
National Research Nuclear University “MEPhI” Specialized Electronic Systems
31 Kashirskoe shosse, 115409 Moscow, Russian Federation, e-mail: [email protected] , fax: +7 (495) 324-0420
National standardization of laser SEE testing
Industry standard: Laser technique. Method 1000.9. OST 11.073.013-03. Part 10
Guidance documents:Laser technique for SEU estimation RD 319.03.24Laser technique for SEL estimation RD 319.03.58
Technical guide: Combined laser focused and ion beam technique. TM-4
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Thank you very much for your attention!