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Scaling I Mohammad Sharifkhani. Reading Text book II (pp. 123)

Jan 17, 2018

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Acknowledgement Some of the slides/figures in this series is brought from other people’s slides in various conferences. So I would like to appreciate them all.
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Scaling I Mohammad Sharifkhani Reading Text book II (pp. 123) Acknowledgement Some of the slides/figures in this series is brought from other peoples slides in various conferences. So I would like to appreciate them all. What is Scaling ? Smaller devices More devices on a given area Recent devices Are they really MOS? Challenges 1. Complexity 2. Cost of integrated circuits is increasing 3. Power 4. Robustness issues 5. The interconnect problem Transistor count The cost of T. drops at the expense of reliability of the chip and testing cost Frequency Multi-core technologies is going to replace the frequency scaling or make it go slower Power Power consumption is the limiting factor in high performance designs Power issue in scaled technologies Lets assume that these trends continue that is, frequency doubles, supply voltage scales down 30%, active capacitance grows 30% to 35%, and die size grows 25%. Now we can speculate on power dissipation and supply currents. Power cont Supply voltage scaling is mandatory! Power density Supply Current Issues IR drop due to high current Supply rails on the chip L(di/dt) creates noise on the supplies Especially when VDD low-voltage is used Hottest chips in ISSCC Die Size The size of the die affects Yield $ Testing $ Reliability ~$ Lithography issues The wavelength of the beam that is used to project an image to a surface determines the accuracy of lines on the image Consider painting a 1cm line with 3cm brush EUV: absorbed by matter vaccume Lower throughput Lithography Cost Cost increase due to complexities such as Lower wavelength laser Exposure system (mirrors, etc.) Correcting masks (phase shifting, etc.) The cost drops after a few years Fab cost Does it make sense to have a fab or better go fabless? Comparison 0.25um vs. 45nm Process Variation Remember tolerance in Electronics I? Feature size Accuracy (random variation) Mean vs. Std. Sources: Lithography Feature size, oxide thickness variations Random dopant fluctuations Temperature gradients, supply grid Affect: Yield Speed, power Leakage power Reliability Testing Interconnect Source: Bohr, Mark T., Interconnect Scaling - The Real Limiter to High Performance ULSI, Proceedings of the 1995 IEEE International Electron Devices Meeting, pp ) Add process variation Extra: LOCOS vs STI