SAMSUNG FOUNDRY 32/28nm Low-Power High-K Metal Gate Logic Process and Design Ecosystem
SAMSUNG FOUNDRY32/28nm Low-Power High-K Metal Gate Logic Process and Design Ecosystem
Design Enablement
SamsungFoundryofferscustomersaccesstoacomprehensiveecosystemofdesignenablementandimplementationbusinesspartnersfromtheEDA,IP,packaginganddesignservicesindustries.Customerscantapintoservicesrequiredtosolvetheirmostcriticaldesignissues.Theseinclude:
• Best-in-class reference flowsfrommajorEDAvendorsviatheCommonPlatformallianceofIBM®,Samsung®andGLOBALFOUNDRIES®
• An extensive IP portfoliofromSamsungandtheCommonPlatformallianceecosystemincludingmixedsignal/analog,logicandmemory
• Comprehensive libraries ofstandardcells,memorycompilersandI/Os
• Predictive DFM solutionstoaddressyieldupstreaminthedesignflow
High-k Metal Gate
High-kdielectricmaterialswithmetalgateinthetransistor’sgatestackextendstheCMOSprocesstechnologywellbeyond32/28nm.SamsungFoundry,inconjunctionwiththe
InternationalSemiconductorDevelopmentAlliance(ISDA),tunedits32/28nmLow-Power(LP)High-kMetalGate(HKMG)Gate-Firstprocessnodetoachieveanarrayofbenefitsandimprovementsover45nmLPPoly-Sion,including:
• 2xgatedensityincrease(SuperiorareascalingwithGate-FirstHKMG)
• >100xlowergateleakage
• >40%delayimprovementatfixedleakage
• ~10xleakagereductionatfixedspeed
Immersion Lithography
Firstintroducedat45nm,immersionlithographyisacriticalfeatureofSamsungFoundry’s32/28nmprocessflow.Samsunghasthelargestinstallationofimmersionlithographytoolsintheindustry,andextensiveexperienceusingtheminitshighlysuccessfulmemoryfabrication.
3D Packaging Technology
SavvychipcompaniesarecloselyinvestigatingnewpackagingsolutionsasawaytostayaheadofMoore’sLaw.Alsoknownas3Dorverticalpackaging,throughsiliconvia(TSV)allowschipmakerstoincreasefunctionalitybyverticallyconnectingcomponentsusingsiliconviasinthepackagingprocess.
Thedynamicaspectsoftheconsumerelectronicsmarketmakeitoneofthemostchallenginginthesemiconductorindustry.Predictingconsumers’interestscoupledwiththeneedtoprovidepowerefficientproductsthatofferPC-likeexperiencesonahandheldproductisenoughtotestanydesigner’sfortitudeandcreativity.Samsung’sexpertiseindeepsub-micronmanufacturingisenablingcustomerstoquicklydesignexcitingnewproductsatthemostadvancedprocessnodes.
SAMSUNG PUSHES FOUNDRY TECHNOLOGY EXPERTISE TO NEW LEVELS
LOGIC AND MEMORY TSV
HKMG ENAbLES PERFORMANCE bOOST
Unequaled Customer Benefits
• Advanced process technology InadditiontoitsownsignificantprocessR&Dinvestments,Samsungisactivelyinvolvedinmanyjointresearchanddevelopmentalliances,includingISDA.Asaresult,Samsungfoundrycustomerscandesigninnovativeproductsbuiltonthe
mostadvancedprocessplatforms.
• Design IPSamsunghasanextensiveportfoliooflibrariesandIPthatisavailabletocustomers,particularlyintheembeddedmemoryandmixedsignalareas,includinglicensedIPfromleadingcompaniessuchasARM®,Snowbush®,andSynopsis®.
• Manufacturing plantMaintainsadvanced90,65,45,32/28nmproductionequipment.TheGiheung,SouthKoreafoundryservescustomerswithleading-edge,high-volume
manufacturingservices.
• Partnerships for multi-sourcingAlongwithIBMandGLOBALFOUNDRIES,SamsungisamemberoftheCommonPlatformalliance.Thethreecompaniesprovideworldwidemulti-sourcingofthesameproductdesigntomeetcustomerneeds,withoutany
redesignrequired.
• Extensive customer supportFromtheinitialengagementtovolumemanufacturing,Samsung’sbusiness,
engineeringandlogisticsteamsarefocusedonfullcustomersatisfaction.
• Customer IP protectionSamsunghasputfirewallsandstrictsecuritysystemsinplacetoensurethatnounauthorizedindividualshaveanyaccesstocustomerIP.Customerscan
auditthesystematanytime.
• Long-term commitmentSamsunghasmadetheinvestmentsinfacilities,personnelandtimeinorderforitsfoundrytosucceedoverthelongterm.Thecompany’sexecutive-levelcommitmentandfinancialstrengtharethebackboneenablingthisapproach.
START ENGAGEMENT
TECHNICAL REQUIREMENTS»Expert-leveltechnicaldiscussions»Clearunderstandingofcustomers’ detailedrequirements
DESIGN ENABLEMENT»Designkits»LibrariesandIP»DesignservicesandDFM
EXPEDITED PROTOTYPING & SHUTTLES»In-housemaskmakingforfastTAT»Superhotlotprototypingservice»Cost-effectiveprototypingandIP verificationshuttles
HIGH-VOLUME MANUFACTURING»300mmcapacity»High-volumeproduction experience»Aggressiveyield-improvementmethods
WAFER-LEVEL TESTING»Wafersort»Qualityandreliabilityexpertise»Fullyequippedfailureanalysislabs
BUMPING, ASSEMBLY & FINAL TEST»Turn-keymanagement
SHIP PRODUCTS
Samsung’sFull-ServiceFoundrySolution
SAMSUNG 65/45/32/28nm IP SOLUTIONS
Standard Cell Library
•HighDensity
•HighSpeed
•MultiVT
•PowerManagementKit
•MultiChannel
Memories
•Single-PortSRAM(HD,LP)
•Dual-PortSRAM(HD,LP)
•RegisterFile(1RW,1R1W)
•RedundancySRAM
•ROM(Via)
•OTP
Analog Cores
•ADC/DAC
• AudioDAC/CODEC
• PLL
• VoltageRegulator
CPUs
•ARM7
•ARM9
•ARM11
•Cortex-M/Cortex-A5/ Cortex-A8/Cortex-A9
High-Speed Interfaces (PHY)
•USB2.0/USB3.0
•8GUniversalSerDes (SAS/SATA/PCIExpress)
•3G/6GSerialATA
•DDR2,DDR3,mDDR,LPDDR2
•DDR3/2combo
•LVDS,subLVDS,mini-LVDS
•HDMI
•DisplayPort
•MIPI
High-Speed Interfaces (Link)
•USBHSOTG/Device/Host
•S-ATA
•10/100/1000MEthernet
•UniPro
•PCIDevice/Bridge
Multimedia
• MPEG4/H.264
•2D/3DEngine
•JPEGCodec
•NTSC/PALEncoder
General & Special-purpose I/O
•LVCMOS(In-Line,STG,CUP)
•SSTL2/SSTL18/SSTL15/SSTL12
•USB1.1Transceiver
AMBA-based Peripherals
•AMBA-2.0/3.0-basedPeripherals
•MemoryController (SDRAM/SRAM/NOR/NAND)
•MultimediaCardInterface (SDMMC/SDIO)
•ARMPrimeCell
www.samsung.com/us/business/foundry©2011.Theappearanceofallproducts,dates,figures,diagramsandtablesaresubjecttochangeatanytimewithoutnotice.SamsungandSamsungSemiconductor,Inc.aretrademarksofSamsungElectronicsCo.,Ltd.
BRO-11-FoundryPrinted03/11
Thefabislocatedona350-acresiteinGiheung,SouthKorea.Ithasaround-the-clockstaffthatincludesdedicatedresourcesforcustomerservice,design,DFM,productengineering,test,failureanalysisandreliability.TheplantproducesadvancedlogicchipsolutionsincludingthosewithembeddedmemoryRF-CMOSchipsandothersophisticatedICs.
Formoreinformation,visitSamsungFoundryat:www.samsung.com/us/business/foundry
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