saha.ppt

S. Saha and B. Gadepally

Technology CAD: Technology Modeling, Device Design and Simulation


2004 VLSI Design Tutorial, January 5, 2004 Mumbai, India


Coordinator: Prof. Bhaskar GadepallyAdjunct Prof., Electrical Engineering, IIT BombayChairman, Reliance Software Consulting, Inc.155 E. Campbell Ave., Campbell, CA 95008 (USA)[email protected]

2004 VLSI Design Tutorial, January 5, 2004Mumbai, India



Instructor: Dr. Samar SahaSilicon Storage Technology, Inc.1171 Sonora CourtSunnyvale, CA 94086 (USA)[email protected]

2004 VLSI Design Tutorial, January 5, 2004Mumbai, India


Mumbai, India S. Saha and B. Gadepally 4

Tutorial Outline• Prof. B. Gadepally:

– Introduction and Tutorial Overview.

• Dr. S. Saha:– Front-end Process Technology CAD (TCAD) Models and

Process Simulations

– Device TCAD Models and Device Simulations

– Industrial Application of TCAD Calibration of Process and Device Models

– Industrial Application of TCAD in Device Research Compact / SPICE Modeling.

Bhaskar Gadepally


Introduction and Tutorial Overview


Mumbai, India Bhaskar Gadepally 6

Overview of IC Technology• In the past three decades:

– device densities have grown exponentially

– device and technology complexities have increased significantly

– design constraints are many-fold: ultra thin oxide interconnect power supply

– technology development cost has increased enormously.


Overview of IC Technology

Channel Engineering - non-uniform channel doping - Quantum Mechanical effects - low-diffusivity impurities - threshold voltage control

Source-Drain Engineering - ultra-shallow extensions - low-energy implants - RTA/LTA techniques - halo optimization

p-substrate

p-well n-well

n+

PMOS

n+ p+p+STIHalo

P+ polySpacer

NMOS

STI(ShallowTrench Isolation)

Gate Engineering: Dielectric - ultra-thin gate oxide - direct tunneling - high-k dielectrics

Gate Engineering: Stack - dual-poly / poly depletion - work function engineering - interface propertiesN+ poly


Overview of IC Devices• New device and device physics are continuously

evolving:– nano-scale devices

– microscopic diffusion

– quantum mechanical carrier transport

– molecular dynamics

– quantum chemistry

– high-frequency interconnect behavior.


Technology CAD

• With the increased complexities in IC process and device physics:

– intuitive analysis is no longer possible to design advanced IC processes and devices

– TCAD tools are crucial for efficient technology and device design to quantify potential roadblocks to indicate new solutions for continuos scaling of devices.


Technology CAD• Scope of TCAD:

– front-end process modeling and simulation implant, diffusion, oxidation etc.

– numerical device modeling and simulation I - V, C - V etc. simulation

– topography modeling and simulation deposition, lithography, etching etc.

– device modeling for circuit simulation compact / SPICE modeling

– interconnect simulation capacitance, inductance etc.


Tutorial Objective• Offer insight into the physical basis of TCAD,

especially, bulk-process and device TCAD.

• Describe systematic methodologies for an effective application of TCAD tools.

• Describe systematic calibration methodology for predictive usage of TCAD tools:– process models– device models.

• Offer users sufficient insight to leverage new tools.


Session 1: Bulk-Process Simulation• Front-end process models implemented in process

TCAD tools:– ion implantation models

analytical Monte Carlo

– microscopic diffusion models point defects

– oxidation transient enhanced diffusion.


Session 2: Device Simulation• Device models implemented in device TCAD tools:

– fundamentals of carrier transport drift-diffusion solution hydrodynamic solution carrier mobility models

– device physics of nanoscale technology inversion layer quantization

– fundamental limits of MOSFETs.


Session 3: Industry Application• Introduction to process and device simulation tools.

• Mesh generation.

• Model selection.

• Predictive usage of TCAD:– process model calibration– device model calibration.

• Predictive simulation of CMOS technology.


Session 3: Industry Application - Calibration

Calibration Effort

TD E

ffect

iven

ess

Low Moderate High

Low

Mod

erat

eH

igh

No or a limitedcalibration onlyprovides somephysical trendsand is usefulfor a first-orderprocess anddevice analysis.

Global calibrationprovides higheraccuracy andpredictability ofsimulation data.Local calibration

with the previousgeneration oftechnology willprovide physicaltrends. Absolutevalues may notmatch real data.


Session 4: TCAD in Research & Modeling

• Simulation tools in device research:– simulation structure

– model selection

– examples sub-100 nm MOSFETs DG-MOSFETs - FinFETs.

• TCAD in device (compact) modeling:– examples

substrate current model flash memory cell macro-model.

Samar Saha


Bulk-Process Simulation


Mumbai, India Samar Saha 18

Outline• Introduction.

• Bulk-process Models:– Ion Implantation– Diffusion– Oxidation.

• Summary.


Introduction

• Front-end IC fabrication processes include:– implant: S/D and halo (low energy); well (high energy) etc.

– diffusion: Rapid thermal annealing (RTA) Transient Enhanced Diffusion (TED) and other anomalous effects

– oxidation: gate oxide, STI liner oxide etc.

p-substrate

p-well n-well

n+

PMOS

n+ p+p+STI

Gate oxide

Halo

P+ polySpacerN+ poly

NMOS

STI(ShallowTrench Isolation)

Source Source DrainDrain


Introduction

• Objective of this session:– understanding of physical models implemented in a

process TCAD tool model hierarchy model limitations building new models

– basic understanding of general purpose simulator internals

– TCAD models in general without considering any particular tools.


Ion Implantation

• Ion Implantation Mechanisms.

• Ion Implant Models:– Analytical– Monte Carlo (MC).

• Implant-induced Damage Modeling.

• “Plus-one” Approximation.

• Summary.


Ion Implantation• Bombard wafers with

energetic ions energy, E 0.5 KeV - 1 MeV > Ebinding.

• Ions collide elastically with target atoms creating:– ion deflections, energy loss– displaced target atoms

(recoils).

• Ions suffer inelastic drag force from target electrons– ion energy loss– lattice heating.

Ion

Target

Rec

oil

channeling


Ion Implantation

• Channeling is caused by ions traveling with few collisions and little drag along certain crystal directions.

• Ions come to rest after losing all the energy on:– elastic collisions (nuclear

stopping)

– inelastic drag (electronic stopping).

Ion

Target

Rec

oil

channeling


Ion Energy Loss Mechanisms• Nuclear stopping (Sn(E)):

– ion energy loss to target atom by interaction with the electric field of the target atom’s nucleus

– classical relationship of two colliding particles– the scattering potential with the exponential screening

function is given by

where Z1 = atomic number of incoming ion

Z2 = atomic number of target atom.

e ar

ibarV i

r4ZZq

)( 1 22

DeflectedIon

Target

Recoil

Ion


Ion Energy Loss Mechanisms

• Electronic stopping (Se(E)) is due to the viscous drag force on moving ion in a dielectric medium.

EZZkS ee ,..., 21

– ke is a model parameter.

• Accurate model must account for the variation of Se in space.

• Stopping power S of an ion is given by:

electronicnuclear dxdE

dxdES


Ion Range Distribution

• Ions come to rest over a distribution of locations.

• Peak, depth, and lateral spread of distribution are determined by:– ion mass, energy, dose, and incident angle

– target atom, composition, geometry, structure, and temperature.

• Implanted profile can be represented by:– particles

– distribution functions.


Ion Range Distribution


Ion Range Distribution• The as-implanted 1D

distribution function is described by a series of coefficients called moments.

• 2D distribution of the implanted profile is constructed from 1D distribution function taking lateral spread vertical spread.


1D Analytical Ion Implantation Models• Gaussian distribution:

– amorphous targets – two coefficients

where Q = implant dose (#/cm-2)

Rp = projected range normalized first moment

p = straggle/standard deviation second moment.

2

2

2exp

2)(

p

p

p

RxQxN xRp

N


1D Analytical Ion Implantation Models

• Pearson-IV: – crystalline targets without channeling

four coefficients (Rp, p, skewness, kurtosis)

– crystalline targets with channeling, tilt, and rotation. six coefficients.

• Dual Pearson-IV:– crystalline targets with channeling, tilt, and rotation

– second profile to model the channeling

– nine coefficients.

• Legendre Polynomials - 19 coefficients.


1D Analytical Ion Implantation Models

• Coefficients are fit to the measured doping profiles.

• Coefficient-set for each distribution is tabulated for different:– ion mass (As, B, In, P, Sb)

– dose, energy, tilt, and rotation

– target type.

• Multi-layer targets:– each material is treated separately and scaled by its Rp.

– dose absorbed on the top layer is calculated and is used as the dose matching thickness for the layer below.


2D/3D Analytical Ion Implantation Models• Each 1D profile along a vertical line is converted to 2D

or 3D distribution by multiplying it by a function of lateral coordinates:

here lateral straggle, l p

• Multi-layer targets and sloped surfaces are converted to 2D/3D by dose matching approach.

• More complex models have l(x).

• Low energy profiles need non-separable point-response functions.

l

l

y

xNyxN

22

exp)(),(

2

1


Monte Carlo Modeling of Ion Implantation• The collision energy loss is modeled by binary

collision approximation (BCA), that is, each ion collides with one target atom at a time.

• The energy loss (E) is modeled in terms of:– incident energy, E0 and scattering angle, 0 of ion

– separation between two particles– coulomb potential between two particles– impact parameter.

• BCA requires special formulation for:– ion channeling– low energies when lattice movements come into play.


Monte Carlo Modeling of Ion Implantation• Ongoing development in MC modeling is to improve:

– speed of calculations– electronic stopping power, Se model

detailed local model for Se local and non-local split in energy loss due to Se

where fnl = fraction of non-local energy split

a = universal screening length p = impact parameter.

• Overall accuracy of MC implant model is excellent.

enl

nl Sap

afNLfE

exp

21

2


Ion Channeling in Crystalline Silicon• Along certain angles in crystal, ion may encounter no

target atoms.

Ion• Repeated small-angle

collisions steer the ion back into the channel.

• Channeling was first discovered by MC simulation.

• Channeling is: – important at any energy– critical at low energy where <110> channels steer Boron

ions under MOS gate.

• Analytic channeling model is complex.


Ion Channeling in Crystalline Silicon


Damage Creation Models• Each incoming ions generates damage seen by

subsequent ions:– recoils target atoms knocked out of lattice sites– amorphous pockets.

• The effect of damage is significant on as-implanted profile as well as during subsequent diffusion.

• Models based on Kinchin-Pease formulation is used to estimate damage density: n = Er/2Ed

where Er = recoil energy

Ed = target displacement energy (~ 15 eV for Silicon).


“Plus-one” Damage Model• Most recoiled interstitials (I) find a vacancy (V) and

recombine rapidly either during the implantation or the first instants of annealing.

• Distribution of remaining recoils shows:– net excess of V near the surface– net excess of I toward bulk.

• At low ion mass and/or moderate energy: – population of net I and net V is less than the population

of I due to dopant atoms taking substitutional sites – one “extra-ion” is created for each dopant atom taking a

substitutional site.


Deviation from “Plus-one” Model• “Plus-one” approximation often fails for:

– heavy ions as the population of recoils can become quite large relative to

extra ion population

– low energy– low dose.

• An effective “plus-n” factor as a function of ion species, energy, and dose is used. Typical values:

As: n 3.5 @ E 5 KeV; n 1.2 @ E 500 KeV B: n 1.2 @ E 5 KeV; n 1.0 for E > 20 KeV P: n 2.2 @ E 5 KeV; n 1.0 @ E 500 KeV.


Ion Implantation: Summary

• Ion implantation with ion energy > Ebinding of target atoms is used to implant impurity atoms into target.

• Analytical ion implantation model:– the impurity profile is represented by moments for different

species, dose, energy, tilt, and rotation– the moments are extracted from the experimental profile

to create look-up table– simulation is performed using this look-up table.

• MC ion implantation model is more accurate, particularly for low energy.

• The implant damage is modeled by “plus-n” model.


Diffusion• Fundamentals of Dopant Diffusion

– Fick’s Laws– Oxidation Enhanced Diffusion (OED)– Oxidation Retarded Diffusion (ORD)– Transient Enhanced Diffusion (TED).

• Point Defect Model.

• Clusters and Precipitates.

• Polysilicon Diffusion.

• Impurity Profiling.

• Summary.


Fick’s Laws of Diffusion• Fick’s first law:

– describes flux (F) through any surface– diffusion is downhill - high low concentration, “- sign”

• Fick’s second law law of conservation of particles

• Low concentration diffusion in silicon is Fickian - each dopant A satisfies:

CDxCDF

FtC .

ADt

CA

A 0.

Fin Fout

x

C

(D diffusivity = constant)


Concentration-Dependent Diffusion

• Typically, intrinsic carrier concentrations (ni) at processing temperatures are high 1019 cm-3.

• For high doping concentrations, C ni, dopant diffusion shows enhancements of the form:

• Diffusion enhancement is due to the variation of point defect population with Fermi level.

• The effective extrinsic diffusivity is given by:

iii npc

nnb

nna

DD

2

0 1

;2

imm

im

ipx n

nDnnD

npDDD

mmmpxo DDDDD

where


Surface Effects on Bulk Diffusion: OED/ORD

• Experimental data show that processes which modify the surface can affect diffusion in the bulk.

• Enhancement of diffusivity in one species while retardation in another is the evidence of two different diffusion mechanisms I and V.

Diffusion processSpecies /defects Oxidation Oxinitridation Nitridation

B, P, I Enhanced Enhanced RetardedAs Enhanced Enhanced Enhanced

Sb Enhancedthen retarded

Enhancedthen retarded

Enhanced

StackingFaults

Grow Grow Shrink


Transient Enhanced Diffusion (TED)• Anomalous displacement of implanted dopants during

low temperature anneals.• Reverse temperature effect: displacement larger at

lower temperatures - up to 0.3-0.4 m.• Displacement increases with implant dose and energy.• Corresponds to temporary increase in diffusivity ~

10,000X.• Implant of one species can drive diffusion of another.• Enhancement is transient.• Spatially non-uniform diffusion enhancements.• Reduced activation.


Transient Enhanced Diffusion (TED)• As implanted over a

buried B layer.

• As implant creates damage deep into the substrate.

• The implant damage causes a significant enhancement in B diffusion deep into the substrate during 20 sec. anneal at 850 °C.

Simulation results


Point Defect Model for Dopant Diffusion• Point defects (I and V) model explains:

– most of the observed trends in dopant diffusion by relating them to the properties of I and V

– “action-at-a-distance” effect of the surface on bulk diffusion.

Vacancy mechanism As, Sb

Kick-out mechanism B, P, In, As, Au, Zn, P

above 900 °C

Frank-Turnbullmechanism

Zn, below 900 °C


Defect Charge States• Defects which have states in the gap will have a

distribution of charge states.• The concentration of charged point defects depends

on Fermi level.• Dopants can diffuse with any of the defect charge

states, some combinations have higher probability.• In principle, must solve a set of: PDEs one for each combination.

• “Five-stream” diffusion model solves equations:

• “Three-stream” model solves equations.

echdefectdopant NNN arg

echdefectdopant NNN arg

echdopantdefectdopant NNNN arg

defectdopant NN


“Electric-field” Effects For high doping

concentration > ni at the processing temperature, the electric field set up by ionized dopants affects diffusivity.

Example: As + B co-diffusion

at 900 °C, 15 min. B- pulled towards

the N+ region due to e-field effects.


Generation/Recombination of Defects• General flux model:

where = fraction of silicon atom injected

– Vm = silicon atom/cm3

– assumed generation growth rate, G.– recombination rate surface excess I - I* and increases

under a growing surface.

• Lateral diffusion of defects during OED is governed by the ratio of DI/Kinert 10 m.

recgensurf FFF

).()(1

,

**

0

0

IIKIIGGKKF

GGGVF

total

k

rinertrec

g

mgen


Surface Generation/Recombination• During OED, recombination/generation fluxes are

large and must balance:

• Fixed interstitial super-saturations, also, occur under nitride, silicide surfaces.

• During TED, recombination appears to be fast, even at inert surfaces, recombination rate:

• Several models are available.

• Optimize Kinert for TED and adjust to fit OED at the expense of lateral OED decay length.

total

gen

KF

II *

.1.0 mKD inertI


Gradient Effects in Transient Diffusion• Dopant flux arises from diffusion of defects-dopant

pairs: boron flux = DBI[BI].

• Number of pairs is proportional to the boron and interstitial concentrations:

boron flux = DBIkpair(IB + BI)

where IB = interstitials enhance boron diffusion I = boron diffusion due to defect gradient

• During TED, I is large near the surface causing:– extra dopant flux to the surface– surface pile-up (and possible interface loss) of dopant.


Interstitial Clustering Model• The growth and dissolution is given by:

where kd is the decay constant

kc is the growth constant

C = concentration of clustered interstitials I = concentration of unclustered interstitials.

• After implantation I is large, C/t = C(kcI) clusters grow exponentially until I = kd/kc.

• When I is small, clusters decay exponentially with time constant 1/kd.

CIkCktC

cd


{311} Cluster Dissolution

• {311} defects:– rod-shaped defect clusters condensed from “+1” amount

of damaged silicon-I at annealing T > 400 °C

– precipitate on {311} planes and extend in the <110> directions to form planar defects.

• Time scale for {311} evaporation is similar to the time scale for TED.

• Simple reaction-based model offers first-order account of evaporation curve.

• Steady super saturation of dopant diffusion is observed during TED.


Dopant Clustering/Precipitation

• Dopants are only soluble up to a limit at any temperature (solid solubility limit).

• Dopants also show deactivation below the solid solubility limit.

• Due to the clusters of size m dopant atoms such as As with m = 4,

– clustering reaction emits interstitials to generate required V.

Can generate enhanced diffusion at the same level as TED.

As

V As

As

As


Chemical Pump Effects• Dopant atom A interacting with I form A + I AI

interstitial-assisted mobile species.

• When AI pairs diffuse out of a region of high I* to a region of low I*, pairs are out of equilibrium and must dissociate, AI A + I.

• A is deposited while I diffuses (“pumped”) away from the surface enhancing diffusion in bulk.

• Surface dopant layer may cause enhanced diffusion in bulk - e.g. D/D* = 70 at 900 °C.

• Causes cooperative diffusion, e.g. emitter push effect in bipolar junction transistors.


Diffusion in Polysilicon• Point defects usually pinned near equilibrium in poly

due to grain boundaries.

• Dopants diffuse in two streams via grain and in boundary.

• An effective model includes:– two streams– dopant transfer from grain to grain boundary– grain growth with time– dopant transfer to grain boundary.

• Segregation coefficient, growth rate, and re-growth rate = f(temperature, grain size, Fermi level).


Metrology for Developing Diffusion Models• Spreading resistance

profile (SRP)

– 1D carrier profiles

– good sensitivity

– modest depth resolution

– carrier spilling

– difficult to use for shallow junctions.

1.E+15

1.E+16

1.E+17

1.E+18

1.E+19

1.E+20

1.E+21

0.0 0.2 0.4 0.6 0.8 1.0 1.2Depth (m)

Log(

Con

cent

ratio

n (c

m-3

)) n

p


Metrology for Developing Diffusion Models• Secondary Ion Mass Spectroscopy (SIMS)

– 1D chemical profiles– good sensitivity to all dopants– excellent depth resolution– surface region troublesome.

• 2D carrier profiling with excellent space resolution:– scanning capacitance microscopy (SCM)

measurement affects sample

– transmission electron holography (TEH) measures electrostatic potential difficult sample preparation.


Monte Carlo Diffusion Methods: AlgorithmMonte Carlo diffusion program (MARLOWE, UT-Austin) offersaccurate diffusion modeling.

MARLOWEGenerates initial I, V positions

THEORETICALCALCULATIONS

Energy of interactionsand

diffusion barriers

EXPERIMENTS

MONTE CARLO DIFFUSION CODE - Diffusion - Clustering - I - V recombination - Surface annihilation - I, V trapping - Boron kick-out, kick-in


• Diffusion is critical to activate the implanted dopants in the semiconductor devices.

• Dopants diffuse in silicon by interacting with point defects through a number of possible atomic-scale mechanisms.

• For short times, the diffusion is dominated by TED because of high concentration of point defects.

• Point defect concentrations depend on temperature, Fermi level, implant damage, and surface processes like oxidation.

• 1D/2D metrology is used to calibrate diffusion model.

Diffusion: Summary


Oxidation

• Fundamentals of Thermal Oxidation.

• Oxide Growth Model:– Deal-Grove Model

– Thin Oxide Model.

• Oxidation Chemistry.

• Oxide Flow: – Oxidation-induced Stress

– Visco-elastic Model.

• Summary.


Oxidation: Diffusion, Reaction, Flow• Oxidation proceeds by three sequential processes:

– oxidant diffuses through existing oxide– oxidant reacts at silicon surface to create new oxide– overlying oxide flows to accommodate new volume.

• Process is at first limited by reaction but diffusion through growing oxide becomes limiting.

O2 or H2O ambientOxidant

Reactionzone

Nitride

Silicon


Oxidation: Deal-Grove Model

C0

CL

SiliconSiO2

L

CCDF Ldiff

0

Freac = kCL

D = diffusivity of oxidant

CL = concentration at Si-SiO2 interface

C0 = concentration at the SiO2 surface

L = oxide thickness k = interface reaction rate constant


Oxidation: Deal-Grove Model

C0

CL

SiliconSiO2

L

CCDF Ldiff

0

Freac = kCL

• At equilibrium: Fdiff = Freac, CL = C0 / [1 + kL/D]

• Oxidation growth rate is given by:

where

C* = equil. oxidant conc.; Ns = # oxidant/cm3 in oxide

BL

ABtL

211

ss NCkABNDCB *;*2


Thin Oxide Models• Deal-Grove model does not fit the early part of

oxidation curve.• The data in thin regime can be fitted with an addition

to Deal-Grove model given by:

where and

C0 3.6x108 m/hr, EA 2.35 eV, and 7 nm in <111> or <100> oriented silicon substrates.

• This model can be found in TCAD tools like SUPREM4.

LC

BL

ABtL exp

211

kTECC Aexp0


Oxidation - Planar Growth

• Two-step oxidation shows a significant difference in oxide density.

• Planar growth generates an intrinsic stress in oxide during growth process:– modest stress (3x109 dynes/cm2)– density increases (< 3%)– refractive index increases (1%) relative to fully relaxed

oxides.First oxidation

Second oxidation1100 C 800 C

900 C900 C L grown in the second step varies depending on the thermal

history of oxide (not just on L).


Oxidation - Planar Growth• Intrinsic stress is an atomistic process.• Relaxes gradually with annealing at a rate which

steadily decreases.• Recent measurements show that relaxation rate is

independent of stress level.• History effects are not accounted for in most process

simulators.• Measured linear/parabolic coefficients describe

oxidation in a state of intrinsic stress. 1D stress already accounted for in one-step

oxidation.


Oxidation Chemistry• Oxidation rate coefficients are sensitive to ambient

additives:– steam 20 - 50 times faster than O2

– 3% Cl2 increases growth rate by 20 - 30%

– 100 ppm NF2 increases growth rate by 2 - 5

– heavy substrate doping increases rate by 2 - 10 according to the relation

– all easily accounted for by building table of B, B/A vs. additive or dopant concentration.

– NO, NO2 are not supported in most process TCAD tools.

2

0

iii nnd

npc

nnba

kk


Oxide Flow• Oxide growing on a curved surface must flow.

• Resulting deformations (and stresses) can be large! LOCOS top surface must stretch by 15 - 20%.

• Elastic limit of glass << 1%

Si3N4

Silicon

Oxide

Silicon

Old Oxide

New Oxide


Oxide Flow

• Large deformations on a curved surface during oxidation mean viscous flow must occur.

• Viscous flow model used to model stress during oxide growth includes:– incompressible viscous flow

– linear elasticity.

• Visco-elastic flow model:– allows oxide to be “slightly” compressible

– eliminates pressure equation

– offers a significant numerical benefit.


Visco-elastic Model: Stress Simulation • Oxide stress

after local oxidation.

• Length of stress vector amount of stress.

Compression

Tension

SiO2

Si3N4


Oxidation: Summary• Basic growth mechanism of thermal oxide:

– oxidant transport through the SiO2 layer to Si/SiO2 interface

– chemical reaction at the interface to produce the new layer of oxide.

• The growth is linear parabolic law.

• The basic Deal-Grove model is extended to explain:– thin oxide growth– mixed ambient oxidation.

• Important effects of thermal oxidation include OED, ORD, and impurity redistribution and segregation.


Bulk-Process Simulation: Summary

• Accurate process models and TCAD tools are extremely critical for continuous scaling of IC’s .

• Workstation performance is continuously improving for cost-effective computer experiments.

• Existing models and TCAD tools treat different aspects of process simulation quite well.

• As new understanding develops, new models are incorporated in TCAD tools to improve predictability.

• Successful process TCAD will require a firm grasp of the controlling process physics.

Samar Saha


Device Simulation



Outline• Introduction.• Carrier Transport Models.• Inversion Layer Mobility.• Quantum Mechanical Confinement.• Discrete Dopant Effects.• Numerical Methods.• Summary.


Introduction

p-substrate

p-well

n+n+

STI

Poly

STI

hot carriers

Non-local transport(velocity overshoot)

QM tunnelingElectrostatics: - 2D/3D effects - discrete charges

Atomicscale

effects

QM confinement

Surface scatteringQuasi-ballistic transport

• A device TCAD tool solves a set of equations to deal with various physical phenomena in semiconductor devices:


Introduction

• Objectives of this session is to:– focus on the underlying physics and models for practical

application of device TCAD such as

identify device physics issues for simulation

discuss and compare simulation approaches

identify limitations

uncertainties

challenges.


Carrier Transport Models• A device TCAD tool generates device characteristics

by solving:– Poisson’s [.D = (r)] + carrier transport equations self-

consistently.

• Carrier transport models include:– drift-diffusion (DD) - standard– Monte Carlo (MC)– molecular dynamics– hydrodynamic (HD)– Boltzmann equation– quantum balance equations.


Carrier Transport Models• The basic concept in transport theory is the carrier

distribution function = f(r,px,t).

• f(r,px,t) = probability of a carrier at the position r with momentum px at any instant t.

• f(r,px,t) is a Maxwellian distribution function with:– area = carrier density, n(r,t)– the spread depends on

carrier temperature

– first moment is velocity– second moment is kinetic energy.

f(r,px,t)

pxEquilibrium


Carrier Transport Models

• At equilibrium, f(r,px,t) is symmetric around px = 0.

• If an e-field is applied along the negative px direction: – electron distribution is distorted and displaced from the origin– causes electron scattering.

• Device TCAD challenge is to solve f(r,px,t).

f(r,px,t)

pxEquilibrium

f(r,px,t)

pxNon-equilibrium

x



• To solve for f(r,p,t) - Boltzmann Transport Equation (BTE):– six dimensions

three in position space three in momentum space

– solution techniques: MC simulation spherical harmonics scattering matrix and so on.



• Solving f(r,p,t), we can find the quantities that device engineers deal with directly such as:– carrier density, n(r,t)– current density, Jn(r,t)

– energy current, JE(r,t)

– average kinetic energy, un(r,t)

– electron temperature, Tn(r,t)

– heat flux, Qn(r,t).

• Six-dimensional equation is difficult to solve and computationally demanding. In TCAD, we directly solve for the quantities of interest.


Carrier Transport: Balance Equations• Basic idea to solve for a quantity (n) of interest is to

formulate a balance equation such as:– rate of increase in n= rate n flows into the volume + net

generation rate.

RGFt

n

Examples:– n = n(x,t): continuity

equation.– n = Jnx(x,t): current

equation.

R Gn

F


Carrier Transport Models• Assuming slowly varying time, we can write the current

equation:

where

= average time between collisions m* = effective mass of electrons.

• We need a balance equation for kinetic energy, uxx.

• For simplicity of computation:– approximate the effects of scattering in n

– close the balance equations by approximating uxx.

x

qnuqnJ xxnxnnx

/2

*/)],,([ mqtprfn


Carrier Transport Models: Drift-Diffusion• The simplest solution of carrier transport equation is

local field or DD approach.

• In DD, is determined by scattering, scattering is determined by uxx, and uxx is determined by .

• For high fields in bulk silicon, (x) and uxx are constants or slowly varying:

here n = 0[N,TL,(x)]; Dn = (kBTL/q)n

• Then the current equation is given by:

Local field transport model: [n = f(local field)]

dxdnTkxtxqntxJ nLBxnnx )(,,


Carrier Transport Models: Drift-Diffusion• DD solution fails to predict device characteristics for

small geometry ( 0.1 m) MOSFETs.

• We know:

here <> is related to the average carrier energy, un(Tn) and Tn = local electron temperature.

• Thus, the DD-transport model can be improved by assuming, n as a function of local energy. Local energy transport model: n = f(local energy)

Alternatively, n = 0[N,TL,Tn]

*/)],,([ mqtprfn


Carrier Transport Models: Local Energy

• Solve for energy density, n = W(x,t) = nu:

whereE = relaxation time.

• n = JE(x,t):

• Unknowns: (x), n(x), p(x), un(x), and up(x)

dxnDdqxnTkCtxJ n

xneBEEx)()(,

E

xnxEx uunxJdx

txdJ

)()(, 0

increase in energy flux

input e-field rate of energydissipation


Carrier Transport Models: DD vs. HD

DD vs. HD model data deviate significantly for 40 nm devices.


Macroscopic Transport Models: Summary• Models are derived directly from BTE.

• Require numerous simplifying assumptions: closure, scattering.

• Difficult to assess the validity of assumptions.

• Many flavors: HD, energy transport (ET).

• Beyond DD, adds significant numerical complexity.

• HD/ET generally provide good estimates of:– average carrier energy– current density.

• Significant differences between various models.


Carrier Transport Models: MC Simulation• MC is a rigorous transport model.• The essence of the model is:

qdtdp

electron

r1

r2

r3, r4

r1 r2

r3, r4

r1

r1: free flight duration

r2: scattering event

r3: direction after scattering r4


MC Simulation: Summary• Advantages:

– numerical method for solving the BTE with e-e correlation

– advanced physics is readily treated (e.g. scattering and complete band structures)

– most reliable transport method for treating hot electron distributions and for assessing novel devices.

• Disadvantage:– computationally demanding:

under near-equilibrium conditions for examining rare events.


Carrier Transport Models: Quantum• Different techniques available include:

(1) equilibrium or ballistic transport

simplest form is used for MOS capacitor simulation

(2) wave propagation with phase randomizing scattering non equilibrium Green’s function approach (Wigner

functions, density matrix)

(3) density gradient/QM potential approach

ErEm C )(

*22

nn

qmnqDVnqJ

n

nnnn

2

*

2

6


Carrier Transport Models: Summary• Drift-diffusion (local field model):

= f(local field)

• Balance equations (mostly local energy): = f(local energy) Examples: HD, ET, etc.

• Boltzmann solvers:– MC

• Quantum transport:– Schrodinger-Poisson– density gradient / quantum potential.


Inversion Layer Mobility• Choice of mobility model

can significantly alter the simulation results.

• Inversion layer mobility versus effective normal electric field show well-known characteristics:– high fields: universal

behavior independent of doping density.

– low fields: dependent on 1) doping density and 2) interface charge.

universal behavior


Inversion Layer Mobility• Mobility versus effective normal electric field curve is

modeled using three components:– coulomb scattering (due to ionized impurity)– phonon scattering - almost constant– surface roughness scattering (at Si/SiO2 interface).

• At low normal fields: – less inversion charge density– ionized impurity scattering dominates and eff = f(NA).

• At high normal fields:– higher inversion charge density close to the interface– surface roughness scattering dominates.


Inversion Layer Mobility

• For higher normal fields, universal behavior as a function of effective normal field:

• The effective field is a non-local quantity.

• Local field mobility models preferred for device TCAD should produce universal behavior in terms of the computed effective field. – Example:

Lombardi Surface Mobility Model.

deplSSi

eff NNKq

5.0


Inversion Layer Mobility• For ultra-thin gate oxide thickness the inversion layer

carrier wave function can extend through Si/SiO2 interface to SiO2/polysilicon interface.

• Mobility may depend on the surface roughness of SiO2/polysilicon interface “remote interface roughness” scattering.

p-substrate

p-well

n+n+

STI

NMOS

STI

Poly Gate OxideElectronwave function


Choice of Surface Mobility Models


Inversion Layer Mobility: Summary

• Mobility is extremely critical for advanced MOSFET device simulation.

• Choice of mobility model can effect simulation data.

• Local field mobility models are being extended for high normal fields and high doping densities.

• New effects may begin to be felt in ultra-thin oxide devices– Example:

remote interface scattering.


Quantum Mechanical Confinement

• The charges near the silicon surface are confined to a potential well formed by:– oxide barrier

– bend Si-conduction band due to applied gate potential.

• Due to QM confinement of charges near the surface:

– energy levels are grouped in discrete energy sub-bands

– each sub-band corresponds to a quantized level for carrier motion in the normal direction.

EC(y)

Depth into Si (y)

EFEner

gy


• Due to QM confinement, the inversion layer concentration:– peaks below the SiO2/Si interface

0 at the interface and is determined by the boundary condition for the electron wave function.


Depth into Si (y)

n(y)

Classical

Quantumz

z = shift in the centroid of charge in silicon away from the interface.

Equivalent oxide thickness for z is:

zQMTSi

OXOX

)(


• Classical:– CSi >> COX (accumulation / inversion)

– Ctotal ~ COX (accumulation / inversion)

• Quantum:– CSi ~ Si/z

– Ctotal < COX (accumulation / inversion)

• Impact of QM confinement:– Vth since more band bending is required to populate the lowest

sub-band– TOX

eff since a higher VG over-drive is required to produce a given level of inversion charge density

– Ctotal since TOXeff = TOX + (OX/Si)z.


Cox

CSi

Vgate


QM Confinement: Modeling Approach• van Dort’s model: amount of band-gap widening due

to splitting of energy levels is given by:

where B = constant

y = distance from Si/SiO2 interface

yref = reference distance for the material

En = normal electrical field

and,

refnsemi

g yyFEkT

ByE /4

)( 323

1

)())(1( 2 yFenyFnn kTE

CLi

CLii

g


QM Confinement: Modeling Approach• Modified local density approximation (MLDA):

– robust and efficient formulation to compute quantization of carrier concentration near Si/SiO2 interface

– offers a good compromise between the accuracy and simulation time

– the confined carrier density is given by FD statistics

)()(

)()()(

and,

2(1exp1

2)(

121

00

yNyn

kTFyEyEyE

yjkTE

dNyn

c

QMFcg

nF

CQM


QM Confinement: COX Reduction

0

3

6

9

12

-2.5 -1.5 -0.5 0.5 1.5 2.5Gate Voltage (V)

Cap

acita

nce

(fF/m

2 )

QM-effects

w/o QM-effects N(p-sub) = 5E17 (cm-3);Tox = 3 nm

Simulation data obtained by simulation program TSUPREM4


QM Confinement: TOX Measurement

4

5

6

7

8

2 3 4 5 6TOX (nm)

T O

X/TO

X (%

)TOX TOX

eff - TOX


QM Confinement: Effect on Vth

• Vth increase due to QM effect depends on channel doping, Nch.

Maximum increase in Vth~ 100 mV for Nch ~ 1x1018 cm-3.

0.00

0.02

0.04

0.06

0.08

0.10

0 5 10 15 20 25 30

Transition Depth (nm)

V th(

QM

) - V

th(C

L) (V

)

nMOSFETsLeff = 100 nm; Tox = 3 nmVDS = 50 mV; VBS = 0

1e18uniform

1e17

GR

ARST

Nch

(cm

-3)

Transitiondepth

1E18

1E17GR-GradedRetrograde

1E18

1E17AR-AbruptRetrograde

1E18

1E17

Depth

ConventionalStep, ST


QM Confinement: Effect on ION

0

5

10

15

20

0 5 10 15 20 25 30Transition Depth (nm)

Io

n(CL

-QM

)/Ion

(CL)

(%)

nMOSFETSLeff = 100 nm; Tox = 3 nmVGS = VDS = 1.5 V; VBS = 0

GR

ARST

1e18uniform1e17

• Ion decrease due to QM confinement depends on Nch.

• Maximum drop in Ion~ 20% for Nch ~ 1x1018 cm-3.


QM Confinement: Summary• Impact of QM confinement becomes significant for

TOX < 4 nm.

• QM confinement affects:– TOX measurement

– drive current– scaling limits.

• Modeling approaches:– semi-physical (e.g. van Dort)– quantum potentials - MLDA– 1D self-consistent Schrodinger-Poisson.


Discrete Dopant Effects• The volume of active

channel region for an advanced MOSFET: V = (W) x (L) x (Xj)

• Typically: length, L = 40 nm width, W = 100 nm;

junction depth, Xj = 25 nm;

Nchannel = 1x1018 cm-3

Ntot = 100 impurity atoms.

The number of dopants in V is a statistical quantity.

V

P (NA cm-3)Source

Drain

Xj


Discrete Dopant Effects• Effects of discrete dopants:

– significant threshold (Vth) variation,Vth (10’s of mV)

– lower average Vth (10’s of mV)

– asymmetry in drive current, IDS.

• 3D transport leads to inhomogeneous conduction in sub-100 nm devices.

• Continuum diffusion models are inadequate to model discrete dopant effects in sub-100 nm MOSFETs.

Source

Drain


Discrete Dopant Effects: Summary

• 2D continuum models can predict spread in Vth.

• Full 3D simulation is necessary to predict mean.

• The role of continuum versus granular models will become increasingly important as devices continue to shrink.


Hot Electron Effects• Effect:

– hot electron injection.

• Outcome: – substrate current.

• Trends:– power supplies are decreasing– electric fields are increasing.


Hot-Carrier Effects• Channel electron

traveling through high electric field near the drain end can:

– become highly energetic, i.e. hot– cause impact ionization and generate e and holes

holes go into the substrate creating substrate current, Isub.

• Some channel e have enough energy to overcome the SiO2-Si energy barrier generating gate current, Ig.

• The maximum e-field, Em near the drain has the greatest control of hot carrier effects.

Gate Ig

n+ Drainn+ Source

Isub

holehot e


Hot Electron Effects: Substrate Current• Local field model (DD)

c = critical electrical field 1.2 MV/cm = impact ionization coefficient.

– calibration of impact ionization model parameters are required to match silicon data

– tuned parameter values can be non-physical and non-predictive for a new technology.

c

n

e

qJrrGn

)(

][


Hot Electron Effects: Isub using DD Model

DD simulation results with default Isub model parameters do not match the measurement data.


Hot Electron Effects: Substrate Current

• Local energy model (HD / ET model)

“surface impact ionization”– better predictive capability than DD approach, but still

uses tuned parameters.

• Non-local energy model.

• Full band MC.

)()(

][

bulkMOSFETqJrurG n

nn


Hot Electron Effects: Summary

• Local field models are highly unphysical that result in unphysical calibrated parameters.

• Local energy models are more physical, but still require calibration of model parameters.

• Physically sound models that provide accurate results without calibration of model parameters are:– full band MC

– non-local energy transport models.


Device TCAD: Summary

• As devices scale down to 0.1 m and below, new physical effects are coming into play.

• Existing tools treat different aspects of device simulation fairly well.

• No single tool treats all of the important physics.

• Successful device TCAD will require a firm grasp of the controlling device physics.

Samar Saha


Industry Application: Calibration of Process and Device Models



Outline• Objectives.• Technology and Industry Trends affecting TCAD.• TCAD Challenges.• TCAD Tool Set.• Calibration:

– Process Models– Device Models.

• Mesh Generation.• TCAD in Technology Development.• Summary.


Objectives• Present issues and solutions for industrial TCAD:

– process simulation calibration

– device simulation key physical models

– mesh generation optimal approach

– calibration examples submicron process submicron device.


Industry Trends affecting TCAD

• CMOS logic as technology driver:

– CMOS logic technology design-space much larger than that of DRAM or BJT technologies

– CMOS logic generation life-span is extremely short

– CMOS simulation is essentially 2D.

• Logic technology offerings becoming broader:

– high-Vth devices

– thick-oxide devices

– low-Vth devices.



• System-on-a-chip (SOC) and logic derivatives:

– integration issues driving increasing share of TCAD cycles

integrating memory and logic (NVRAM, DRAM)

BiCMOS

CMOS imaging

SiGe BJT and PFET.

• Net result:

Rapidly expanding opportunities for TCAD to contribute.



• Rapid thermal processing (RTP):– easy process addition increases design space

– many subtle electrical effects.

• Larger wafer sizes:– interaction of process variations on circuit performance

becoming increasingly important new TCAD arena.

• New impurity species increase design options:– In– Ge– N.



• New materials and methods:– nitrided gate oxide

– high-K gate dielectric

– junction pre-amorphization

– SOI

– selective epitaxial growth

– laser thermal annealing (LTA).

• Net result: – rapidly expanding design space for TCAD to cover – process TCAD challenges predominate.


Industrial TCAD Challenges• Challenge is to transform TCAD potential into

valuable results for process and device engineers.

• Key tasks:– system perspective

connect process recipes to device parametric/circuit performance (“virtual fab”)

organize TCAD process to make non-experts productive TCAD users and maximize productivity of experts

– process and device simulations process simulation reflect actual process results accurate electrical results for compact model extraction.


Industrial TCAD Challenges

• Critical assumptions for success:– calibrate/characterize complex physical models for the

present range of operation - global calibration

– timely development/implementation of required physical models

– timely calibration (local calibration) of process and device models to contribute significantly for the next generation technology development technology transfer.

• TCAD usage can be significantly broadened.


TCAD Tool Set

• Process simulation:

– 2D capability with

extensive detailed physical model set for implantation, diffusion, oxidation, deposition, and etching

detailed knowledge of model formulation and modification.

– examples based on

vendor supported SUPREM4-process platform

generalized calibration procedure.


TCAD Tool Set

• Device Simulation:

– general 2D capability based on moments of Boltzmann equation

– control-volume discretization of DD/HD equations

– examples based on

vendor supported MEDICI-device platform

generalized calibration procedure

– user environment

vendor supported TWB-framework platform.


Calibration - Role of TCAD• TCAD in research:

– evaluate advanced device options– understand device physics.

• TCAD in technology development (TD):– perform tradeoffs for design options to reduce

experimental wafer starts– assess manufacturability and design options– diagnose device/layout problems.

• TCAD in manufacturing:– process simplification for production technologies– problem diagnosis and fix.

Accuracy is crucial, especially, for TD and manufacturing.


Need for Calibration

• Deviation of simulation and measured data:– technology dependent:

different focus area and application different physical models involved.

– site/fab dependent: equipment material environment measurement techniques human interface.


Need for Calibration

• Limitation of physical models:– secondary mechanisms become important

– model dependency on implementation details

– model short-fall in describing the target generation of process technology and devices.

• Limitation of model characterization/range:– may not cover all possible process conditions

– may not cover all technologies

– may not be able to measure directly.


Calibration Challenges

• Experimental data:– expensive to obtain, especially, SIMS profiles

– insufficient processing information

– statistical fluctuations.

• Model complexity:– some parameters can not be directly measured

– more parameters than data points.

• Simulation accuracy:– grid dependency

– practical limitation on CPU and memory.


Objective of Tool Calibration

• Device specific calibration:– operation region (optimization)

– technology development

– items of importance.

• DOE and characterization.

• Calibration of model parameters.

• Supporting software utilities.


General Calibration Methodology

• Use short flows to characterize process profiles:– design process splits to cover design space.

• Use full flows to characterize devices with different dimensions (L and W dependencies).

• Tool calibration:– match SIMS profiles

– use device data to correlate 2D effects

– match device characteristics.

• Two-phase process.


Process Simulation Overview

• Model calibration for process simulation:

– overview of calibration process

– Phase 1: 1D impurity calibration methodology example - nMOSFET channel profile

– Phase 2: 2D calibration (process + device) methodology example - reverse short channel effect (RSCE).

• Summary.


Process Modeling Approach• Predictive capability for a wide range of logic and

memory technologies necessitates:– new implant tables with new species like In, Ge etc.

– 3-stream TED model for dopant, interstitials, and vacancies

– “plus-n” damage model with accumulated damage from multiple implants

– amorphization due to implant damage

– transient activation/deactivation of dopants

– dislocation loops as source/sink for interstitials

– 3-phase segregation model.


Process Simulation Calibration: Overview

• Model calibration (Phase 1)– implant models

– diffusion models

– oxidation models

– etch/deposition models.

TEM/SEM cross-sections, SIMS profiles, key (1D) electrical parameters.

• Technology/2D calibration (Phase 2)– key process model parameters

– selected set of 2D electrical parameters.


MOSFETs Process Model Calibration Flow

Match SIMS profilesAdjust for dose loss

Match Vth

RSCE

Two-dimensional CalibrationDIBLSurface recombinationDamage by S/D implant

One-dimensional CalibrationImplant moments/tableOEDSegregation (set by channel profile)Diffusivity (in oxide for dose loss)Tox (QM,Poly-depletion corrections)

One-dimensional CalibrationDiffusivity of dopant-defect pairDiffusivity of defects


MOSFETs 1D Process Model Calibration

p-substrate

p-well n-well

n+

PMOS

n+ p+p+STI

NMOS

A B C F E D Cross-section for short loop experiments:

A / D NMOS / PMOS channel B / E NMOS / PMOS SDE C / F NMOS / PMOS S/D.


A Typical Short Loop Experiment for P-Well

Wafer No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14Sacrificial oxide x x x x x x x x x x x x x xP-Well (B) implant x x x x x x x x x x x x x xN-PT (B) implant x x x x x x x x x x x x xWell drive x x x x x x x x x x x xnVth (BF2) implant x x x x x x x x x x xGate oxidation x x x x x x x x x xPoly re-oxidation x x x x x x x x xRTA1 x x x x x x x xSpacer dep/etch x x x x x x xS/D oxide x x x x x xN+ (As) implant x xRTA2 x x x


Calibration Example: Channel Profile• Use of detailed physical models to achieve 1D SIMS

profile fit:– typical Phase-1 calibration activity– model updated over several technology generations.

• Channel profile after complete technology thermal cycle.

• Initial approach for implant and diffusion– MC implant

significant CPU burden

– scaled solid solubility– physics-based implant moments / implant table update.


Example: NMOS Channel Profile

P-Well B, 1E13 @ 200 KeVafter spacer deposition/etch

Depth (m)

log1

0 (B

oron

)

SIMS

Simulation


Technology Calibration - Phase 2• Coupled process and device simulations using Phase

1 calibration data.

• Target output (electrical) parameters:– C - V curves

– Vth

– RSCE.

• Input variables (5 - 8 process model parameters):– point-defect distributions from implants

“plus-n” model

– key impurity segregation coefficients– parabolic oxidation rate.


2D Calibration Example: RSCE


Process Modeling: Summary

• Systematic process model calibration methodology is critical.

• Observed success within a (CMOS) technology:– process re-optimization offered a significant

improvement in device performance

– process centering achieved at manufacturing co-location with minimum development effort.

• Observation: – each successive technology generation requires a

significant calibration effort (model update).


Device TCAD

• Role of device simulation in TCAD

• Key physical models and examples:– mobility models for deep sub-micron CMOS

– quantum effects in scaled CMOS devices

– DD model.

• Device model calibration:– impact ionization with DD model.

• Summary.


Device Simulation Role in TCAD

• Simulate device electrical behavior with sufficient accuracy to calibrate process simulation models:– primarily 2D electrostatic simulation

Vth, DIBL, Ioff, body effect, capacitances

– expect DD model is sufficient for most requirements for MOSFETs with Leff 0.1 m.

• Provide capability for the physical simulation of wide range of device parameters:– substrate current, latch-up, ESD, and so on.

• Support exploratory device simulation for research.


Device Simulation: CPU Burden• Numerical issues associated with device simulation

are well established:– core issue is repeated solution of large, sparse, ill-

conditioned, non-symmetric sets of linear equations– typical industrial CMOS problem:

~ 10,000 mesh nodes simultaneous solution for (, n, p)

– iterative solution methods often exhibit lack of convergence on problems of industrial interest.

• Optimized direct solution methods along with optimal mesh generation techniques can reduce CPU burden significantly without sacrificing accuracy.


Critical TCAD Models: Carrier Mobility

• Device-design trends arising from CMOS scaling require consideration of:– coulombic scattering in the inversion layer

high substrate/channel doping levels channel doping can vary significantly across the device

– inversion- and accumulation-layer mobility.

• Industrial use of a mobility model requires:– strictly local calculation of mobility

minor increase in program complexity no restrictions on device geometries or device designs.


Critical Device TCAD Models: QM Effects• CMOS scaling requires inclusion of inversion-layer

QM effects in device simulation for:– thinner gate oxides– higher substrate doping.

• Inversion-layer QM correction model must be:– strictly local calculation of required physical quantities

minor increase in program complexity no restrictions on device geometries or device designs

– acceptable CPU burden– no significant degradation in robustness.

• Models: van Dort / MLDA.


MOSFETs: Device Model Calibration Flow

Work functionQM modelLow field mobility

High field mobility

Band to band tunneling

Impact Ionization

IDS vs. VGS (Vth)

@ VBS = 0,VDS = 50 mV

Isub vs. VGS

@ VBS = 0,VGS = 0

IDS vs. VGS (IDS vs. VDS)

@ VBS = 0,VDS = VDD

IDS vs. VDS

@ VBS = 0,VGS = 0


Example: Impact Ionization Model DD-simulation over estimates Isub by more than an order.


Example: Impact Ionization Model

• Impact Ionization model calibration:– used calibrated process model (technology calibration)

– used calibrated device models (device calibration)

– calibrate impact ionization coefficients.

• The electron impact ionization rate:

where Ai and Bi are empirical constants

Eeff = effective electric field due to non-local effect.

eff

iii E

BA exp


Example: Impact Ionization Model For DD, transform the model in terms of local electric

field, E. Assume, Eeff E, Eeff = k *

where k and are constants depending on the spatial variation of E

near the drain-end of the channel.

Substituting for Eeff and defining Bi k * i, the modified

impact ionization coefficient is:

Optimize i and to fit the measurement data.

EA i

ii exp


Example: Impact Ionization Model Calibrate device TCAD models: comparison of I - V data.


Example: Impact Ionization Model Simulation with calibrated impact ionization coefficients.


Example: Impact Ionization Model Simulation with calibrated impact ionization coefficients.


Device TCAD: Summary• Vendor supported device TCAD tools work very well

with the present applications such as:– MOSFET I - V and C - V characteristics for technology

development logic DRAM.

• Model selection and calibration show good results for sub-0.25 m technology development.

• Device TCAD effectiveness depends on:– mobility model suitable for the target technology– inversion-layer QM effects.


Mesh Generation for Simulation• Role and Requirements.

• Methods:– structured – quadtree– unstructured– hybrid.

• Example:– typical MOSFET mesh and gridding considerations.

• Summary.


Mesh Generation: Role and Requirements

• Requirement is to support complete automation of process-to-device simulation transition:– highest barriers to expanded TCAD usage are

mesh generation process simulation accuracy.

• Consistent and specialized grid distribution is an important key to simulation of high-performance MOSET devices:– resolution of inversion layers and depletion regions

– resolution of mobility-model physical effects.


Mesh Generation: Role and Requirements

• Requirements:

– must accept device structures from detailed process simulation

– no restrictions on device structures

– mesh generation approach must minimize computational burden without compromising solution robustness and accuracy key: anisotropic grid-point distributions (the capability of

supporting extreme differences in grid-point spacing in x- and y-directions).


Mesh Generation MethodsMethods Advantages Disadvantages

Structured:- algebraic- elliptic

- Precise grid control- Smooth grid transition- Supports anisotropic grid

scales.

- Requires significantstructural preprocessing

- Difficult to automate- Large grid sizes.

Unstructured - Very general- Easy to automate.

- Do not support anisotropicgrids

- Large grid size for industrialproblems.

Quadtree/Octree:- isotropic

recursivesubdivision

- Very general- Easy to automate.

- Needs advanced features tosupport anisotropic grids

- Large grid size for industrialproblems.

Hybrid:- recursive

subdivision foranisotropy

- unstructuredmesh algorithm

- Very general- Easy to automate- Precise and smooth grids- Supports grid scales- Minimizes mesh sizes- Minimizes CPU burden.

- Need to identify differentregions for gridding prior todevice simulation.


Hybrid Mesh Generation: Half-MOSFET

x

y

Gate S/DC

hann

el Source/Drain


Mesh Generation Dependence of device performance on vertical grid-spacing.


Mesh Generation Dependence of device performance on horizontal grid-spacing.


Mesh Generation: Summary

• Mesh generation is the critical component of an effective TCAD system.

• Simulation results vary significantly on mesh and may result in:– unphysical calibration parameters

– unpredictable/inconsistent results.

• Robust mesh: – allows process simulators to be consistently and robustly

linked to device simulators by non-experts

– significantly reduces CPU burden for device simulation.


Industry Application: Summary

• Vendor supported TCAD tools offer most simulation capabilities for industrial usage.

• Systematic calibration procedure is required to support efficient:

– process technology optimization

– future technology development.

• Mesh generation is crucial for predictive technology simulation.

• Well calibrated physical models provide efficient predictive TCAD capability.

Samar Saha


Industry Application: TCAD in Device Research and Compact Modeling



Research Application: Overview

• Role of TCAD in device research:– how it differs from development/manufacturing.

– examples sub-100 nm MOSFET device design design optimization of FinFETs.

• TCAD for compact modeling:– TCAD-based compact model parameter extraction for

substrate current modeling

– flash memory cell macro model.

• Summary.


Role of TCAD in Research• Performance analysis of future device design options

to guide development effort.

• Understand device physics for new device concepts.

• Typically, research TCAD is not the “virtual fab” paradigm:– process simulation is not used, since device cannot be

made with current process technologies.

• Circuit performance is directly evaluated from the output of device simulation using two different ways:1 device simulation model extraction circuit simulation2 mixed-mode device/circuit simulation.


Example: Sub-100 nm MOSFET Design• Design issues in achieving MOSFET devices near

the lower limit of channel length:– scaling requirements– material limitations of scaling – feasibility of continuous scaling.

• Methodology to generate sub-100nm MOSFET device characteristics vs. scaling parameters.

• Results and discussions.• Summary.


Scaling Requirements vs. Limitations

Scaling Requirements Present LimitationsA reduction in gate oxidethickness, TOX in proportion tothe gate length, Lg to: control threshold voltage, Vth control drain-induced barrier

lowering (DIBL) improve drive current, IDSAT.

SiO2-Tox(eff) 2 nm to maintain: tolerable chip standby power ~

100 mW range tolerable direct-tunneling gate

leakage current, Ig ~ 1 A/cm2

off-state leakage current, Ioff ~ 1nA/m.

A reduction in source-drainextension junction depth, Xjwith scaling Lg to control: short channel effect (SCE).

Xj 30 nm to maintain: lower source-drain series

resistance, RSD higher IDSAT.

A reduction in Lg to: improve device performance.

Lg 60 nm to maintain: Xj 30 nm


Feasibility of Continuous TOX and Xj Scaling

• Scaling Tox(eff) 2 nm is feasible with a highK dielectric gate material to maintain:– a thicker value of TOX(physical) for a tolerable value of Lg

– a target value of gate capacitance (COX) equivalent to that of an ultra-thin SiO2 gate material.

• Scaling Xj 30 nm is essential to:

– scale down Lg, gate area, and COX

– improve ac device performance.


Idealized Device Simulation Structure

• Channel doping profile: vertically and laterally non-uniform.

• SDE: heavily-doped source-drain extension regions with junction depth Xj.

• DSD: heavily-doped deep source-drain of junction depth Xjd.

• Halo: channel-type doping around SDE regions.

Leff

HaloXjd

Xj

HaloDSD

SDE

LextTOX

Lg

Body (B)

Poly-Si gate Spacer


Design Simulation Experiment

• Designed CMOS technologies for Leff = 25 nm with:– {Lg = 40 nm, Xj 14 nm, Tox(eff) = {1,1.5, 2} nm}

– {Lg = 50 nm, Xj 20 nm, Tox(eff) = {1,1.5, 2} nm}

– {Lg = 60 nm, Xj 26 nm, Tox(eff) = {1,1.5, 2} nm}.

• For each technology:– non-uniform vertical channel doping profile was optimized for

the target long channel |Vth| 0.23 V

– two halo profiles (double halo architecture) were used to reduce DIBL from both SDE and DSD regions achieve non-uniform lateral channel doping profile with the

target |Ioff| 10 nAm @ |VDD| = 1 V.


Simulation Strategy

• Optimized technology parameters:– SDE peak concentration 2.5x1020 cm-3

– DSD peak concentration 3.7x1020 cm-3

– peak halo concentration 5x1018 - 1x1019 cm-3.

• Channel concentration dependent on Lg.

• Device characteristics were generated using MEDICI with:– hydrodynamic model for semiconductors

– van Dort’s Quantum Mechanical model

– calibrated device models (global calibration!!).


Simulated Channel Doping ContoursLg


-0.45

-0.35

-0.25

-0.15

-0.05

0.05

0.15

0.25

0.35

0.45

10 20 30 40 50 60 70 80 90 100

Leff (nm)

Vth

(V)

Tox(eff) = 2.0 nmTox(eff) = 1.5 nmTox(eff) = 1.0 nm

40 nm Technology; Xj 14 nm|VDS| = 0.05 V; VBS = 0

nMOSFET

pMOSFET

(a)

-0.45

-0.35

-0.25

-0.15

-0.05

0.05

0.15

0.25

0.35

0.45

10 20 30 40 50 60 70 80 90 100

Leff (nm)

Vth

(V)


60 nm Technology; Xj 26 nm|VDS| = 0.05 V; VBS = 0

pMOSFET

nMOSFET

(b)

• |Vth| increases with the increase in TOX(eff) for all devices.

• Devices with Leff = 25 nm and TOX(eff) = 2 nm, |Vth| > 0.4 V is too high for high-performance operation @ |VDD| 1 V.

• TOX(eff) < 2 nm offers lower |Vth| for low power operation.

Simulated Vth vs. Leff for different TOX(eff)


Simulated IDSAT vs. Ioff for different TOX(eff)

• Devices with |Ioff| nAm represents Leff = 25 nm.

• At a constant |Ioff| 2 nA/m:

– |IDSAT| increases as TOX(eff) decreases

– TOX(eff) < 2 nm is essential to improve IDSAT for Leff = 25 nm devices.

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

5.0E-05 2.0E-04 3.5E-04 5.0E-04 6.5E-04 8.0E-04

|IDSAT| (A/m)

|I off|

(A/

m)


|VDS| = 1 V; VBS = 0

nMO

SFET

pMO

SFET

40 nm TechnologyXj 14 nm(a)

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

5.0E-05 2.0E-04 3.5E-04 5.0E-04 6.5E-04 8.0E-04

|IDSAT| (A/m)

|I off|

(A/

m)


pMO

SFET

nMO

SFET

|VDS| = 1 V; VBS = 0

60 nm TechnologyXj 26 nm(b)


• For a typical 50 nm technology with Leff = 25 nm and Tox(eff) = 1 nm: – S 80 mV/decade– |DIBL| 60 mV– IDSAT(n) 680 A/m, |IDSAT(p)| 275 A/m @ |VGS| = 1 V = |VDS|.

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

-1.0 -0.5 0.0 0.5 1.0

V(Gate) (V)

|I(D

rain

)| (A

/m

)

|V(Drain)| = 1.00 V|V(Drain)| = 0.05 V

Tox(eff) = 1 nmLg = 50 nmXj 20 nmLeff = 25 nm

S 80 mV/decade|DIBL| 0.060 V

pMOSFETnMOSFET

(a)

V(Source) = 0V(Body) = 0

0.E+00

1.E-04

2.E-04

3.E-04

4.E-04

5.E-04

6.E-04

7.E-04

-1.0 -0.5 0.0 0.5 1.0

V(Drain) (V)

|I(D

rain

)| (A

/m

)

|V(Gate)| = 1.0 V|V(Gate)| = 0.8 V|V(Gate)| = 0.6 V|V(Gate)| = 0.4 V

pMOSFET

nMOSFET

Tox(eff) = 1 nm; Lg = 50 nmXj 20 nm; Leff = 25 nmV(Source) = 0 = V(Body)

(b)

Simulated I - V Data for TOX(eff) = 1 nm


• For 25 nm devices of a 50 nm CMOS technology, as Tox(eff) increases from 1 nm 1.5 nm:– S increases [S 8 mV/decade]– DIBL increases [(DIBL) 30 mV]– |IDSAT| decreases [IDSAT(n) 102 A/m; IDSAT(p) 42 A/m].

1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

-1.0 -0.5 0.0 0.5 1.0

V(Gate) (V)

|I(D

rain

)| (A

/m

)

|V(Drain)| = 1.00 V|V(Drain)| = 0.05 V

Tox(eff) =1.5 nmLg = 60 nmXj 20 nmLeff = 25 nm

S 88 mV/decade|DIBL| 0.090 V

pMOSFET nMOSFET

(a)

V(Source)=0V(Body)=0

0.E+00

1.E-04

2.E-04

3.E-04

4.E-04

5.E-04

6.E-04

-1.0 -0.5 0.0 0.5 1.0

V(Drain) (V)

|I(D

rain

)| (A

/m

)


pMOSFETnMOSFET

Tox(eff) = 1.5 nm; Lg = 50 nmXj 20 nm; Leff = 25 nmV(Source) = 0 = V(Body)

(b)

Simulated I - V Data for TOX(eff) = 1.5 nm


1.E-10

1.E-09

1.E-08

1.E-07

1.E-06

1.E-05

1.E-04

1.E-03

-1.0 -0.5 0.0 0.5 1.0

V(Gate) (V)

|I(D

rain

)| (A

/m

)

|V(Drain)| = 1.00 V|V(Drain)| = 0.05 V

Tox(eff) = 2 nmLg = 50 nmXj 20 nmLeff = 25 nm S 96 mV/decade

|DIBL| 0.12 V

pMOSFET nMOSFET

(a)

V(Source)=0V(Body)=0

0.E+00

1.E-04

2.E-04

3.E-04

4.E-04

5.E-04

-1.0 -0.5 0.0 0.5 1.0

V(Drain) (V)

|I(D

rain

)| (A

/m

)


pMOSFET nMOSFET

Tox(eff) = 2 nm; Lg = 50 nmXj 20 nm; Leff = 25 nmV(Source) = 0 = V(Body)

(b)

• For 25 nm devices of a 50 nm CMOS technology, as Tox(eff) increases from 1 nm 2 nm:– S increases [S 16 mV/decade]– DIBL increases [(DIBL) 60 mV]– |IDSAT| decreases [IDSAT(n) 214 A/m; IDSAT(p) 72 A/m].

Simulated I - V Data for TOX(eff) = 2 nm


Simulated Vth vs. Xj for Different TOX(eff)

-0.45-0.35-0.25-0.15-0.050.050.150.250.350.45

12 14 16 18 20 22 24 26 28X j (nm)

V th (V

)


|VDS| = 0.05 V; VBS = 0

L eff = 25 nm; |I off | 10 nA/m

pMO

SFE

TnM

OS

FET


Simulated IDSAT vs. Xj for Different TOX(eff)

1.8E-04

2.8E-04

3.8E-04

4.8E-04

5.8E-04

6.8E-04

12 14 16 18 20 22 24 26 28

X j (nm)

| I DSA

T| (

A/m

)


nMO

SFE

TpM

OS

FET

|VGS| = |VDS|=1V; VBS=0|I off | @ 10 nA/mmL eff = 25 nm


Simulated DIBL vs. Xj for Different TOX(eff)

10

30

50

70

90

110

130

150

12 14 16 18 20 22 24 26 28X j (nm)

dVth

(DIB

L) (m

V/V)

Tox(eff) = 2.0 nm (nMOSFET)Tox(eff) = 1.5 nm (nMOSFET)Tox(eff) = 1.0 nm (nMOSFET)Tox(eff) = 2.0 nm (pMOSFET)Tox(eff) = 1.5 nm (pMOSFET)Tox(eff) = 1.0 nm (pMOSFET)

Leff = 25 nm

VBS = 0


Simulated S vs. Xj for Different TOX(eff)

60

65

70

75

80

85

90

95

100

12 14 16 18 20 22 24 26 28X j (nm)

S (m

V/de

cade

)

Tox(eff) = 2.0 nm (nMOSFET)Tox(eff) = 1.5 nm (nMOSFET)Tox(eff) = 1.0 nm (nMOSFET)Tox(eff) = 2.0 nm (pMOSFET)Tox(eff) = 1.5 nm (pMOSFET)Tox(eff) = 1.0 nm (pMOSFET)

Leff = 25 nm

VBS = 0


Simulated Delay for Different Xj and Lg

0

5

10

15

20

25

30

35

14 16 18 20 22 24 26 28X j (nm)

Incr

emen

tal G

ate

Del

ay,

(%)


= [{(Xj) - (Xj = 14 nm)}/(Xj = 14 nm)]100

|VDD| = 1 V; Fanout = 1

Leff = 25 nm


Sub-100 nm MOSFET Design: Summary• The simulation results show the feasibility of 25 nm

MOSFETs with:– TOX(eff) 2 nm to

maintain lower |Vth| for |VDD| 1 V operation achieve higher |IDSAT| for a target value of |Ioff| lower value of DIBL lower value of S 80 mV/decade

– Xj 30 nm to scale Lg 60 nm improve device speed.

• 25 nm devices with Xj 14 nm and Lg 40 nm show a significant improvement in speed.


• Design FinFET (double-gate MOSFET) Simulation Structure.

• Optimize Different Fin-dimensions.

• Feasibility of 20 nm FinFET Device.

• Comparison of 20 nm Device Performance using FinFET vs. Conventional MOSFET Architecture.

• Summary.

Example: Double Gate MOSFET Design


Idealized Double Gate MOSFET Structure

Tox

Tox

TSiSource Drain

Top Gate

Bottom GateLg

• Tox = Top/bottom gate oxide thickness.

• TSi = Un-doped/lightly-doped channel width.

• Lg = Channel length.


Simulated DG-MOSFET FinFET Structure

Tfin

Hfin

Lg


Major Process Steps to Generate FinFETs

1. D

efin

e Si

-Fin

2. G

ate

oxid

atio

n

3. P

oly-

Si g

ate

4. N

itrid

e sp

acer

S

/D im

plan

t

5. H

alf-

stru

ctur

e

6. Full-structure

Oxide

Si-Fin

BOX

Nitride

Poly

Nitr

ide


Critical Parameters for FinFET Simulation

• Parameters used for simulation structure design:– Tfin = 10 to 30 nm

– Hfin = 50 nm

– Lg = 10 to 50 nm

– Tox = 1.5 nm.

• For device simulation, channel doping was optimized to obtain Vth 0.1 V for Lg = 20 nm nFinFETs.

• Device structures and the characteristics were generated using 3D-simulation tool Taurus (from Synopsys).


Vth vs. Lg for Different Tfin; Hfin = 50 nm

-0.4-0.3-0.2-0.10.00.10.20.3

10 20 30 40 50L (Gate) (nm)

Vth

(V)

Tfin = 10 nmTfin = 20 nmTfin = 30 nm


IDSAT vs. Lg for Different Tfin; Hfin = 50 nm

5.0E-04

1.0E-03

1.5E-03

2.0E-03

2.5E-03

10 20 30 40 50L (Gate) (nm)

I DSA

T (

A/

m)

Tfin = 10 nmTfin = 20 nmTfin = 30 nm


S vs. Lg for Different Tfin; Hfin = 50 nm

50

70

90

110

130

150

10 20 30 40 50

L (Gate) (nm)

S (m

V/de

cade

)

Tfin = 10 nm Tfin = 20 nmTfin = 30 nm


I V Characteristics of 20 nm FinFETs


FinFETs vs. Conventional MOSFETs

DeviceParameters Units FinFETs Double-halo

MOSFETsLeff nm 20 20Tox nm 1.5 1.5Vth V 0.13 0.35IDSAT (VGS = VDS = 1 V) A/m 775 587Ioff (VGS = 0, VDS = 1 V) A/m 3 0.05DIBL V 32 130S-factor mV/decade 83 100

20 nm FinFETs show superior device performance compared to 20 nm conventional MOSFETs.


• TCAD is used to design and study FinFET device characteristics.

• The simulation data for nFinFETs with 10 nm < Lg < 50 nm and Hfin = 50 nm show:– higher Vth roll-off as Lg decreases for thicker Tfin devices

– lower IDSAT in thinner Tfin devices due to higher s/d resistance

– increase in S with decrease in Lg for Tfin < 50-nm

– S 60 mV/decade for all Tfin with Lg >>40-nm.

• 20 nm FinFETs show superior device performance than 20 nm conventional bulk-MOSFETs.

FinFET Design: Summary


Example: Compact Model Extraction for Isub

• Procedure for TCAD-based Compact Model Parameter Extraction.

• Simplification of Isub Model for TCAD-based Compact Modeling.

• Model Extraction.

• Model Verification.

• Summary.


Substrate Current, Isub Model

Isub generated due to impact ionization is given by:

whereAi and Bi are impact ionization parameters

lc = characteristic length of saturation region

Em = maximum lateral electric field near the drain

Ec = critical electric field for velocity saturation.

,exp

m

iDSmc

i

isub E

BIElBAI

22

cc

DSATDS ElVV



At strong inversion (VDS >> VDSAT) Em is given by:

where

Leff = effective channel length of device

Vth = threshold voltage of device.

thGSeffc

thGSeffcDSAT VVLE

VVLEV

c

DSATDSm l

VVE

DSATDS

ciDSDSATDS

i

isub VV

lBIVVBAI exp



• The bias dependence of Ec is given by:

Ec = Ec0 + EcgVGS + EcbVBS

where Ec0, Ecg, and Ecb are model parameters given by:

Ec0 = Ec @ VGS = VBS = 0

Ecg = slope of Ec vs. VGS plot @ VBS = constant

Ecb = slope of Ec vs. VBS plot @ VGS = constant

• The bias dependence of lc is given by:

lc = (lc0 + lc1VDS)TOX

here lc0 and lc1 are model parameters.


Isub Model Parameters

• Empirical constants:– Ai = 1.65x106 (1/cm)

– Bi = 1.66x106 (V/cm)

• Technology dependent parameters:– Ec0 = bias independent constant (V/cm)

– Ecg= gate bias dependent parameter (1/cm)

– Ecb = back-gate bias dependent parameter (1/cm)

– lc0 = bias independent constant (cm)

– lc1 = bias dependent constant (cm/V).

We assume, lc = lc0 is a technology dependent constant for TCAD-based parameter extraction (i.e. ignore lc1).


TCAD-based Isub Model Extraction

VDSAT extraction

Ec extraction

lc extraction

SPICE simulation

Format I - V dataCompute Isub/IDS

DeviceSimulation

Device ModelCalibration

At each VGS, generate:IDS - VDS and Isub - VDS

ProcessSimulation

Process ModelCalibration

Generate:Device Structure

Extraction of{Ec0, Ecg, Ecb}


Parameter Extraction: VDSAT VDSAT is extracted by mapping constant Isub/IDS contours on IDS vs. VDS

family of simulated curves.


Parameter Extraction: Ec0, Ecg, and Ecb

• Ec0 and Ecg extraction:

– extract VDSAT for different values of VGS at VBS = 0.

– compute Ec from:

– plot Ec vs. VGS to extract:

Ec0 = intercept @ VGS = 0

Ecg = slope.

• Same procedure to extract Ecb with VBS 0.

thGSeffc

thGSeffcDSAT VVLE

VVLEV


Parameter Extraction: lc and Components

• The simplified from of the expression: log(Y) = mX + C,

where X = 1/(VDS - VDSAT)

Y = Isub/[IDS(VDS - VDSAT)]

• Parameters are extracted from log(Y) vs. X plots: slope, m = - Bi lc

intercept, C = ln(Ai/Bi).

DSATDS

ciDSDSATDS

i

isub VV

lBIVVBAI exp


Parameter Extraction: lc and Components


TCAD-based Isub Models

• For nMOSFET devices of the target technology:

+ Ec0 = 5.50E+04 (V/cm)

+ Ecg = 3.50E+03 (1/cm)

+ lc = 1.38E-05 (cm)

+ Ai = 1.65E+06 (1/cm)

+ Bi = 1.66E+06 (V/cm)


Model VerificationMeasurement and simulation data using the extracted models.


Model VerificationMeasurement and simulation data using the extracted models.


Model Extraction for Isub: Summary

• The example shows the basic idea to use TCAD for compact model parameter extraction using:– calibrated process models for process TCAD

– calibrated device models for device TCAD

– simplified equations and extraction routines, as needed.

• Process and device models were calibrated for the target technology.

• Isub model is simplified to extract model parameters.

• The simulation data using TCAD-based model agree very well with the measurement data.


Example: Flash Memory Cell - Macro Model

• Flash Memory Cell Compact Modeling

– split gate cell

– two-transistor macro model

– necessity for TCAD-based macro model.

• Model extraction.

– procedure.


Flash Memory Cell - Split Gate Structure• Cell consists of:

– WL transistor– FG transistor.

• FG may not have contact pad for measurement.

• Typically, 1T-cell model is used.

• 2T-model provides more accurate cell characteristics. TCAD-based.


Flash Memory Cell: TCAD-based Model

CalibratedDevice Model

CalibratedProcess Model

Extract SPICEModel for T1

Extract SPICEModel for T2

Model Verification

SimulateI - V for T1

SimulateTest Structures

SPICE/CircuitSimulation

GenerateMacro Model

Cal

ibra

ted

Dev

ice

Mod

el

SimulateI - V for T2


TCAD in Research & Modeling: Summary

• Device TCAD can be successfully used in device research to:– study different device options

– examine new device ideas

– optimize device design range for technology development guideline.

• Calibrated TCAD models can be used accurately to:– predict device performance

– extract compact model

– predict circuit performance.


References[1] J.D. Plummer et al., Silicon VLSI Technology - Fundamentals, Practice and

Modeling. Prentice Hall, New Jersey, 2002.

[2] S. Tian, “Predictive Monte Carlo ion implantation simulator from sub-keV to above 10 MeV,” J. Appl. Phys., vol. 93, No. 10, p 5893, 2003.

[3] S. Furukawa et al., “Theoretical considerations on lateral spread of implanted ions,” Jap. J. Appl. Phys., vol. 11, p 134, 1992.

[4] S. Hobler and S. Selberherr, “Two-dimensional modeling of ion implantation induced point defects,” IEEE Trans. Computer-Aided Design, vol. 7, p 174, 1998.

[5] L. Pelaz et al., “Modeling of the ion mass effect on transient enhanced diffusion: deviation from ‘+1’ model,” Appl. Physics. Lett., vol. 73, p 1421, 1998.

[6] S. Chakravarthi and S.T. Dunham, “Influence of extended defect models on prediction of boron transient enhanced diffusion,” in Silicon Front End Technology - Materials Processing and Modeling, N. Cowern, P. Griffin, D. Jacobsen, P. Packan, and R. Webb, eds. (Mat. Res. Soc. Proc. vol. 532, Pittsburgh, PA, 1998).


References[7] P.M. Fahey et al., “Point Defects and Dopant Diffusion in Silicon,” Rev.

Modern Physics, vol. 61, p. 289, 1989.

[8] A. S. Grove, Physics and Technology of Semiconductor Devices. John Wiley & Sons, New York, 1967.

[9] H.Z. Massoud et al., “Thermal Oxidation of Silicon in Dry Oxygen: Growth-Rate Enhancement in the Thin Regime I. Experimental Results, II Physical Mechanisms,” J. Electrochem. Soc., vol. 132, p. 2685 and 2693, 1985.

[10] F. Nouri et al., “Optimized shallow trench isolation for sub-0.18 m technology,” Proc. SPIE Conf. on Microelectronic Device Technology, vol. 3506, p. 156, 1998.

[11] TSUPREM4, Synopsys Corp., Mountain View, CA.

[12] H. Kosina et al., Device modeling for the 1990’s,” Microelectron. J., vol. 26, p. 217, 1995.

[13] S.E. Laux and M.V. Fischetti, “Transport models for advanced device simulation-truth or consequences?,” BCTM Tech. Dig., 1995.


References[14] M.K. Ieong and T.W. Tang, “Influence of hydrodynamic models on the

prediction of semiconductor device characteristics,” IEEE-TED, vol. 44, p. 2242, 1997.

[15] M.S. Lundstrom, Fundamentals of carrier transport, 2nd edition Cambridge University Press, 2000.

[16] M.N. Darwish et al., “An improved electron and hole mobility model for general purpose device simulation,” IEEE-TED, vol. 44, p. 1529, 1998.

[17] D. Vasileska et al., “Scaled silicon MOSFETs: Degradation of the total gate capacitance,” IEEE-TED, vol. 44, p. 584, 1997.

[18] C. Rafferty et al., “Multi-dimensional quantum effect simulation using a density-gradient model and script-level programming techniques,” Simulation of Semiconductor Process and Devices, K.De Meyer and S Biesemans (eds.), p. 137, 1998, Springer-Verlag.

[19] M.J. van Dort et al., “A simple model for quantization effects in heavily-doped silicon MOSFETs at inversion conditions,” Solid-St. Electron., vol. 37, p. 411, 1994.


References[20] P. Vande Voorde et al., “Accurate doping profile determination using TED/QM

models extendible to sub-quarter micron nMOSFETs,” IEDM Tech. Dig., p. 811, 1996.

[21] S. Selberherr, “MOS device modeling at 77K,” IEEE-TED, vol. 36, p.1464, 1989.

[22] S. Saha, “Effects of inversion layer quantization on channel profile engineering for nMOSFETs with 0.1 m channel lengths,” Solid-State Electron., vol. 42, p. 1985, 1998.

[23] S. Saha et al., “Effects of inversion layer quantization and polysilicon gate depletion on tunneling current of ultra-thin SiO2 gate material,” Mater. Res. Soc. Symp. Proc., vol. 567, p. 275, 1999.

[24] P. Wong and Y. Taur, “Three-dimensional atomistic simulation of discrete random dopant distribution effects in sub-0.1 m MOSFETs,” IEDM Tech. Dig., p. 705, 1993.

[25] P.A. Stolk et al., “Modeling statistical dopant fluctuations in MOS Transistors,” IEEE-TED, vol. 45, p. 1960, 1998.


References[26] S.E. Laux and M.V. Fischetti, “The physics of hot-electron degradation of Si

MOSFETs: can we understand it?,” App. Surf. Sci., vol. 39, p. 578, 1989.

[27] C. Jungemann et al., “Is physically sound and predictive modeling of NMOS substrate currents possible?,” Solid-St. Electron., vol. 42, p. 647, 1998.

[28] S. Saha et al., “Impact ionization rate of electrons for accurate simulation of substrate current in submicron devices,” Solid-State Electron., vol. 36, p. 1429, 1993.

[29] R.W. Dutton and Z. Yu, Technology CAD: Computer simulation of IC processes and devices. Kluwer, 1993.

[30] S. Selberherr, Analysis and simulation of semiconductor devices. Springer-Verlag, 1984.

[31] N. Arora, MOSFET models for VLSI circuit simulation – theory and practice. Springer-Verlag, 1993.

[32] S. Saha, “Managing technology CAD for competitive advantage: An efficient approach for integrated circuit fabrication technology development,” IEEE Trans. Eng. Manage., vol. 46, p. 221, 1999.


References[33] S. Saha, “Improving the efficiency and effectiveness of IC manufacturing

technology development,” in Technology and Innovation Management, D.F. Kocaoglu, T.R. Anderson, D.Z. Milosevic, K. Niwa, and H. Tschirky (eds.), Portland, OR: PICMET 1999, p. 540, 1999.

[34] S. Saha, “Technology CAD for integrated circuit fabrication technology development and technology transfer,” in Proc. SPIE Conf. on Design and Process Integration for Microelectronic Manufacturing II, vol. 5042, p. 63, 2003.

[35] C.V. Mouli, “Models and methods: Effective use of technology-computer aided design in the industry,” J. Vac. Sci. Tech. B., vol. 18, p. 354, 2000.

[36] C. Lombardi et al., “A physically based mobility model for numerical simulation of non-planar devices,” IEEE Trans. Computer-Aided Design., vol. 17, p. 1164, 1988.

[37] S. Saha, “MOSFET test structures for two-dimensional device simulation,” Solid-State Electron., vol. 38, p. 69, 1995.

[38] O.C. Zienkiewcz, The Finite Element Method, McGraw-Hill, 1977.


References[39] S. Saha, “Scaling considerations for high performance 25 nm metal-oxide-

semiconductor field-effect transistors,” J. Vac. Sci. Tech.. B, vol. 19, p. 2240, 2001.

[40] S. Saha, “Design considerations for 25 nm MOSFET devices,” Solid-State Electron., vol. 45, p. 1851, 2001.

[41] C.C. Hu, “FinFET – a device for nanoscale IC (NSI),” in IEEE Silicon Nanoelectronics Workshop Digest, p. 1, 2002.

[42] S. Saha, “Device characteristics of sub-20 nm silicon nanotransistors,” in Proc. SPIE Conf. on Design and Process Integration for Microelectronic Manufacturing II, vol. 5042, p. 172, 2003.

[43] G. Pei et al., “FinFET design consideration based on 3-d simulation and analytical modeling,” IEEE Trans. Electron. Dev., vol. 49, p.1411, 2002.

[44] TAURUS, Synopsys Corp., Mountain View, CA.

[45] MEDICI, Synopsys Corp., Mountain View, CA.

[46] S. Saha, “Extraction of substrate current model parameters from device simulation,” Solid-State Electron., vol. 37, p. 1786, 1994.

saha.ppt

Documents

strictly local

program complexity

large grid

layer qm effects

accumulation

india technology

transient

impact ionization