Top Banner
S. Reda EN160 SP’08 esign and Implementation of VLSI System (EN01600) ecture 19: Combinational Circuit Design (1/3 Prof. Sherief Reda Division of Engineering, Brown University Spring 2008 [sources: Weste/Addison Wesley – Rabaey/Pearson]
12

S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

Dec 18, 2015

Download

Documents

Elwin Griffin
Welcome message from author
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
Page 1: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Design and Implementation of VLSI Systems(EN01600)

Lecture 19: Combinational Circuit Design (1/3)

Prof. Sherief RedaDivision of Engineering, Brown University

Spring 2008

[sources: Weste/Addison Wesley – Rabaey/Pearson]

Page 2: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Circuit Families

1.Static CMOS2.Ratioed Circuits3.Cascode Voltage Switch Logic4.Dynamic Circuits5.Pass-transistor Circuits

Page 3: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

1. Static CMOS

• Start with network of AND / OR gates• Convert to NAND / NOR + inverters• Push bubbles around to simplify logic

– Remember DeMorgan’s Law

Y Y

Y

D

Y

(a) (b)

(c) (d)

Page 4: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Compound gates

• Logical Effort of compound gates

Page 5: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Input ordering delay effect

– Calculate parasitic delay for Y falling• If A arrives latest? 2• If B arrives latest? 2.33

6C

2C2

2

22

B

Ax

Y

If input arrival time is known–Connect latest input to inner terminal

Page 6: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Asymmetric gates

• Asymmetric gates favor one input over another• Ex: suppose input A of a NAND gate is most critical

– Use smaller transistor on A (less capacitance)– Boost size of noncritical input– So total resistance is same

• gA = 10/9

• gB = 2

• gavg = (gA + gB)/2 = 14/9

• Asymmetric gate approaches g = 1 on critical input• But total logical effort goes up

Page 7: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Symmetric gates

• Inputs can be made perfectly symmetric

A

B

Y2

1

1

2

1

1

Page 8: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Skewed gates

• Skewed gates favor one transition over another• Ex: suppose rising output of inverter is most critical

– Downsize noncritical nMOS transistor

• Calculate logical effort by comparing to unskewed inverter with same effective resistance on that edge.– gu = 2.5 / 3 = 5/6– gd = 2.5 / 1.5 = 5/3

Page 9: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Hi- and Lo-Skew

• Definition: Logical effort of a skewed gate for a particular transition is the ratio of the input capacitance of the skewed gate to the input capacitance of an unskewed inverter with equal drive for the same transition.

• Skewed gates reduce size of noncritical transistors– HI-skew gates favor rising output (small nMOS)– LO-skew gates favor falling output (small pMOS)

• Logical effort is smaller for favored direction• But larger for the other direction

Page 10: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Catalog of skewed gates

Page 11: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

What is the P/N ratio that gives the least delay?

• We have selected P/N ratio for unit rise and fall resistance ( = 2-3 for an inverter).

• Alternative: choose ratio for least average delay

• By sacrificing rise delay, pMOS transistors can be downsized to reduced input capacitance, average delay, and total area

Page 12: S. Reda EN160 SP’08 Design and Implementation of VLSI Systems (EN01600) Lecture 19: Combinational Circuit Design (1/3) Prof. Sherief Reda Division of Engineering,

S. Reda EN160 SP’08

Beware of PMOS

• pMOS is the enemy!– High input and diffusion capacitance for a given current

• Can we take the pMOS capacitance off the input?– Various circuit families try to do this…

B

A

11

4

4

Y