Electric Field Effect in Organic Semiconductors DMR 0405208 PI: Michael Gershenson The single-crystal organic field-effect transistors (OFETs), developed for the first time at Rutgers, allow the exploration of fundamentals of organic electronics and development of novel applications. Due to dramatic reduction of the density of surface defects, the intrinsic (not limited by static disorder) charge transport was realized for the first time on the surface of organic semiconductors. V. Podzorov et al., PRL 93, 086602 (2004) V. Sundar et al., Science 303, 1644 (2004) Development of a novel class of single- crystal OFETs, the so-called “air-gap” devices, enables the realization of a very high room-temperature mobility of charge carriers (~ 20 cm 2 /Vs), an order of magnitude greater than that in the best thin-film organic transistors. E. Menard et al., Adv. Materials 16, 2097 (2004) Novel light-induced effects have been observed in the single-crystal OFETs; these effects can be used for development of the Rubrene single crystal 1 mm Molecular resolution STM image of rubrene surface “air-gap” organic single-crystal field- effect transistor The first review on single-crystal OFETs: R. de Boer, M. Gershenson, A. Morpurgo, and V. Podzorov, Phys. Stat. Sol . A 201, 1302