Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September Submicron Scaling of III-V HBTs for 40-200 GHz Analog & Digital ICs Mark Rodwell University of California, Santa Barbara [email protected]805-893-3244, 805-893-3262 fax
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Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September Submicron Scaling of III-V HBTs for.
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Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
Submicron Scaling of III-V HBTs for 40-200 GHz Analog & Digital ICs
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
State-of-art in HBTs, 2000: cutoff frequencies
Si / SiGe have significantly poorer material parameters …but are much better scaled in size and current density
0 50 100 150 200 250 300 350
Frequency, GHz
SiGe
InP
AlGaAs/GaAs & GaInP/GaAs
ft
fmax
ft
ft
fmax
fmax
~1 um emitters
~1 um emitters(0.4 um)
~0.1 um emitters
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
State-of-Art in HBTs, 2000: small-scale circuits
0 20 40 60 80 100
Frequency, GHz
A
SiGe
InP
amplifiers
logic
logic
amplifiers
Si / SiGe has rough parity in logic with InP despite lower ft, fmaxdue to higher current density, better emitter contacts
Si/SiGe has significantly slower amplifiers due to lower ft, fmax
Si/SiGe has much better scales of integration, etc
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
160 Gb/s is more than possible ! UCSB
160 Gb/s LIA simulations using UCSB HBT model
Zach Griffith
PortinNum=1
PortinnNum=2
PortoutnNum=3
PortoutNum=4
V_DCSRC1Vdc=Vee1 V
V_DCSRC2Vdc=Vee2 V
RR3R=Rf Ohm
RR4R=Rf Ohm
SHBT_594_modelX5Area=Area_ inAvia=Avia_ in
SHBT_594_modelX6Area=Area_ inAvia=Avia_ in
SHBT_594_modelX7Area=Area_ inAvia=Avia_ in
SHBT_594_modelX8Area=Area_ inAvia=Avia_ in
SHBT_594_modelX2Area=Area_2Avia=Avia_2
RR9R=Re1 Ohm
I_ProbeI_P robe_FBn
I_P robeI_P robe_CS1
I_P robeI_P_R2n
RR2R=Re2 Ohm
I_ProbeI_P robe_CS2
RR8R=Re1 Ohm
I_ProbeI_P robe_FB
I_P robeI_P_R2
SHBT_594_modelX1Area=Area_2Avia=Avia_2
RR1R=Re2 Ohm
I_ProbeI_P robe_ in
SHBT_594_modelX3Area=Area_1Avia=Avia_1
I_P robeI_P robe_ inn
SHBT_594_modelX4Area=Area_1Avia=Avia_1
RR7R=Rcs2 Ohm
RR10R=Rcs1 Ohm
RR11R=Ree Ohm
RR12R=Ree Ohm
RR5R=Rl Ohm
RR6R=Rl Ohm
PortinNum=1
PortinnNum=2
PortoutnNum=3
PortoutNum=4
V_DCSRC1Vdc=Vee1 V
V_DCSRC2Vdc=Vee2 V
RR3R=Rf Ohm
RR4R=Rf Ohm
SHBT_594_modelX5Area=Area_ inAvia=Avia_ in
SHBT_594_modelX6Area=Area_ inAvia=Avia_ in
SHBT_594_modelX2Area=Area_2Avia=Avia_2
RR9R=Re1 Ohm
I_P robeI_P robe_FBn
I_P robeI_P robe_CS1
I_P robeI_P_R2n
RR2R=Re2 Ohm
I_P robeI_P robe_CS2
RR8R=Re1 Ohm
I_P robeI_P robe_FB
I_P robeI_P_R2
SHBT_594_modelX1Area=Area_2Avia=Avia_2
RR1R=Re2 Ohm
I_P robeI_P robe_ in
SHBT_594_modelX3Area=Area_1Avia=Avia_1
I_P robeI_P robe_ inn
SHBT_594_modelX4Area=Area_1Avia=Avia_1
RR7R=Rcs2 Ohm
RR11R=Ree Ohm
RR10R=Rcs1 Ohm
RR12R=Ree Ohm
RR5R=Rl Ohm
RR6R=Rl Ohm
SHBT_594_modelX7Area=Area_ inAvia=Avia_ in
SHBT_594_modelX8Area=Area_ inAvia=Avia_ in
0 1 2 3 4 5 6 7 8 9 10 11 12 13
time, psec
-0.22
-0.20
-0.18
-0.16
-0.14
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
out_
diff
0 1 2 3 4 5 6 7 8 9 10 11 12 13
time, psec
-0.22
-0.20
-0.18
-0.16
-0.14
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
out_
diff
AgilentConexant
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
for x 2 improvement of all parasitics: ft, fmax, logic speed…base 2: 1 thinnercollector 2:1 thinneremitter, collector junctions 4:1 narrowercurrent density 4:1 higheremitter Ohmic 4:1 less resistive
Scaling Laws for fast HBTs
Challenges with Scaling:Collector mesa HBT: collector under base Ohmics. Base Ohmics must be one transfer lengthsets minimum size for collector Emitter Ohmic: hard to improve…how ?Current Density: dissipation, reliabilityLoss of breakdownavalanche Vbr never less than collector Egap (1.12 V for Si, 1.4 V for InP) ….sufficient for logic, insufficient for power
emitterbase contact
collectorcontact
SI substrate
InGaAs subcollector
InP collector
InGaAscollector
InP subcollector
InGaAs base
undercutcollector junction
base contactemitter
base contact
SI substrate
base
sub collector
base contact pad
collectorcontact
polymer polymer
collector-base junction
Narrow-mesa with 1E20 carbon-doped base
undercut-collector
transferred-substrate
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
Submicron Transferred-Substrate HBT
0
5
10
15
20
25
30
10 100 1000
Gai
ns,
dB
Frequency, GHz
fmax
= 1.1 THzft = 204 GHz
Mason's gain, U
H21
MSG
emitter, 0.4 x 6 mm2
collector, 0.4 x 6 mm2
Ic = 6 mA, V
ce = 1.2 V
UCSBMichelle Lee
3000 Å collector400 Å base with 52 meV gradingAlInAs / GaInAs / GaInAs HBT
(?)
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
Record ft HBT UCSBYoram Betser
Emitter 1 x 8 mm2, Collector 2 x 8.5 mm2.0
10
20
30
40
50
1 10 102
Gai
ns
(dB
)
Frequency (GHz)
h21
U
VCE
= 1 V, JC = 1.5 mA/um2
fMAX
= 295 GHz
f t = 295 GHz
2000 Å collector300 Å base with 52 meV gradingAlInAs / GaInAs / GaInAs HBT
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
1E9 1E10 1E11 1E12
freq, Hz
-20
-15
-10
-5
0
5
10
15
20
dB(h
21)
UdB
(sho
rt..S
(2,1
))
m1freq=303.0GHzdB(short..S(2,1))=0.000
m1
m2freq=165.0GHzdB(short..S(2,1))=0.000
m2
0
1
2
3
4
5
6
7
8
0 1 2 3 4 5 6
Ic - V
ce characteristics
I c (m
A)
Vce
(volts)
IB in steps
of 20 uA 105 A/cm2
High Speed, High Breakdown DHBTs
ft = 165 GHz; fmax = 303 GHz
5 V breakdown at 105 A/cm2
UCSBpk SundararajanM Dahlstrom
0
5000
1 104
1.5 104
2 104
0 2 4 6 8 10
J c (A
/cm
2)
Vce
(volts)
BVCEO>9 V
1x 8 micron emitter, 2x 10 micron collector
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September
High Speed Amplifiers
18 dB, DC-50 GHz
UCSBDino Mensa
PK Sundararajan
8.2 dB, DC-80 GHz
-20
-15
-10
-5
0
5
10
15
20
0 10 20 30 40 50
397 GHz gain x bandwidth from 2 HBTs
S22
S11
S21
Rodwell et al, UCSB: Keynote talk, 2000 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, September