RF Power GaN on SiC Transistor Depletion Mode …cache.nxp.com/files/rf_if/doc/data_sheet/MMRF5015N.pdfMMRF5015N 1 RF Device Data Freescale Semiconductor, Inc. RF Power GaN on SiC
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MMRF5015N
1RF Device DataFreescale Semiconductor, Inc.
RF Power GaN on SiC TransistorDepletion Mode HEMTThis 125 W CW RF power GaN transistor is optimized for wideband operation
up to 2700 MHz and includes input matching for extended bandwidthperformance. With its high gain and high ruggedness, this device is ideallysuited for CW, pulse and wideband RF applications.This part is characterized and performance is guaranteed for applications
operating in the 1–2700 MHz band. There is no guarantee of performance whenthis part is used in applications designed outside of these frequencies.
1. Measured in 2500 MHz narrowband test circuit.2. Measured in 200–2500 MHz broadband reference circuit.
Features
• Decade bandwidth performance• Plastic package enables improved thermal resistance• Advanced GaN on SiC, offering high power density• Input matched for extended wideband performance• High ruggedness: > 20:1 VSWR
Applications• Ideal for military end--use applications,
including the following:
– Narrowband and multi--octavewideband amplifiers
– Radar
– Jammers
– EMC testing
• Also suitable for commercial applications,including the following:
– Public mobile radios, includingemergency service radios
– Industrial, scientific and medical
– Wideband laboratory amplifiers
– Wireless cellular infrastructure
Document Number: MMRF5015NRev. 0, 9/2015
Freescale SemiconductorTechnical Data
1–2700 MHz, 125 W CW, 50 VWIDEBAND
RF POWER GaN ON SiCTRANSISTOR
MMRF5015N
OM--270--2PLASTIC
Figure 1. Pin Connections
(Top View)
Drain2 1Gate
Note: Exposed backside of the package isthe source terminal for the transistor.
1. Continuous use at maximum temperature will affect MTTF.2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf and search for AN1955.3. Part internally input matched.
Note: Pulse performance achieved with device clamped into thereference circuit; similar CW performance can be achieved bysoldering the device to the heatsink.
Narrowband Performance and Impedance Information (TC = 25°C)The measured input and output impedances are presented to the input of the device at the package reference plane.
Measurements are performed in Freescale narrowband fixture tuned at 500, 1000, 1500, 2000 and 2500 MHz.
Figure 5. Power Gain and Drain Efficiencyversus Output Power
Pout, OUTPUT POWER (WATTS)
Gps,POWER
GAIN(dB)
12
32
0
26
30
28
Gps
20
24
22
0
80
ηD,DRAINEFFICIENCY(%)
40
16
32
48
641000 MHz
VDD = 50 Vdc, IDQ = 300 mA, CW
14
16
18
20 60 200
8
24
56
72
80 100 120 140 160 180
40
500 MHz
2000 MHz
1500 MHz
2500 MHz
1000 MHz
1500 MHz
2500 MHz
2000 MHz
ηD
500 MHz
fMHz
ZsourceΩ
ZloadΩ
500 0.7 + j2.9 6.0 + j3.3
1000 1.1 – j0.03 5.6 + j2.3
1500 0.9 – j1.2 3.3 + j3.0
2000 1.3 – j1.8 3.8 + j0.9
2500 3.5 – j4.0 3.1 + j0.3
Zsource = Test circuit impedance as measuredfrom gate to ground.
Zload = Test circuit impedance as measuredfrom drain to ground.
Figure 6. Narrowband Fixtures: Series Equivalent Source and Load Impedances
C13 220 μF, 100 V Electrolytic Capacitor EEV-FK2A221M Panasonic-ECG
R1 51 Ω, 1/8 W Chip Resistor SG732ATTD51R0F KOA Speer
— 18 AWG Teflon Wire, Total Wire Length = 4.0″/101.6 mm — —
PCB Rogers RO4350B, 0.030″, εr = 3.66 D68403 MTL
MMRF5015N
9RF Device DataFreescale Semiconductor, Inc.
Figure 8. PCB Pad Layout for OM--270--2
(11.94)0.470
(mm)Inches
2X Solder Pads
1. Slot dimensions are minimum dimensions and exclude milling tolerances.
(6.53)0.257(1)
(6.02)0.237(1)
(10.85)0.427(1)
(5.59)0.220
Figure 9. Product Marking
MRF5015ATYYWWB
10RF Device Data
Freescale Semiconductor, Inc.
MMRF5015N
PACKAGE DIMENSIONS
MMRF5015N
11RF Device DataFreescale Semiconductor, Inc.
12RF Device Data
Freescale Semiconductor, Inc.
MMRF5015N
MMRF5015N
13RF Device DataFreescale Semiconductor, Inc.
PRODUCT DOCUMENTATION AND TOOLS
Refer to the following resources to aid your design process.
Application Notes• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Development Tools• Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.freescale.com/rf
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0 Sept. 2015 • Initial Release of Data Sheet
14RF Device Data
Freescale Semiconductor, Inc.
MMRF5015N
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