RF Components Enabling Backhaul - Microwave & RF · PDF fileRF Component Technologies Enabling Affordable Wireless Backhaul Gorden Cook, Director of Business Development RF Micro Devices

RF Component Technologies Enabling Affordable Wireless Backhaul

Gorden Cook, Director of Business Development RF Micro Devices

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RF Micro Devices Overview

•  >$1B RF Wireless Components Supplier • Cell phone • Base Station • Backhaul • 802.11, other wireless markets

•  Scale Driven Cost • High volume, low cost capability

•  High Frequency, High Power • Broad portfolio of products

•  Internal Foundry Processes • GaAs, pHEMT, HBT • GaN

•  Performance • Robust, reliable devices designed to deliver optimal performance

Backhaul Options – Macro, Micro

Cable/DSL

Fiber

WiFi

Wireless PtP/PMP Small Cell

Wireless Backhaul Challenges

CapEx & OpEx TCO costs

Business Model …to enable small cell rollout

Capacity Requirements Mbps, Gbps, …

Siting and Installation Antenna size, alignment, etc

Spectrum •  NLoS <6GHz •  6-42GHz LoS •  60GHz V Band •  E band

Mixed Topologies and Equipment •  LOS •  NLOS •  Multiple bands •  PtP, PMP

…component innovations to impact all areas

Two Key Ingredients to the Wireless Backhaul Solution

LoS NLoS

V Band 60GHz

E Band 71-76, 81-86GHz

~6-42GHz <6GHz

•  Spectrum •  RF Component Technologies •  …

Rx In

Tx Out

Downconverter

Upconverter

Frac-N PLL

Tx In

Rx Out

TxVCO

PA

2nd IF Converter

Gain Block/DVGA

Gain Block/DVGA

RF Out

RF In

Freq

LO In

IFRxI

IFRxQ

LO In

IFTxI

IFTxQ

RxVCO

RF Component Technologies Enabling Backhaul

Core Semiconductor Components •  Up Converter •  Down Converter •  VCOs •  Driver, PA •  2nd IF Frequency Conversion •  Digital Baseband

Competing Enabler Processes •  GaAs •  GaN •  Silicon

Key Innovation Vectors •  Cost •  Integration •  Linearity •  Power Efficiency •  PA output power •  Multi-band Coverage

Rx In

Tx Out

Downconverter

Upconverter

Frac-N PLL

Tx In

Rx Out

TxVCO

PA

2nd IF Converter

Gain Block/DVGA

Gain Block/DVGA

RF Out

RF In

Freq

LO In

IFRxI

IFRxQ

LO In

IFTxI

IFTxQ

RxVCO

RF Component Innovations: Semiconductor Process

Rx In

Tx Out

Downconverter

Upconverter

Frac-N PLL

Tx In

Rx Out

TxVCO

PA

2nd IF Converter

Gain Block/DVGA

Gain Block/DVGA

RF Out

RF In

Freq

LO In

IFRxI

IFRxQ

LO In

IFTxI

IFTxQ

RxVCO

GaAs •  Incumbent legacy process for

high frequency components •  Moderate MMIC integration •  Good power density, efficiency •  High linearity, low noise

GaN •  High power density process •  Power Amp stage, >3W •  High power density, efficiency •  Good linearity, low noise

SiGe •  Silicon, low price for high

volumes •  Higher integration •  Higher noise process, lower

output power

RF Component Future Innovations: End Benefits

Rx In

Tx Out

Downconverter

Upconverter

Frac-N PLL

Tx In

Rx Out

TxVCO

PA

2nd IF Converter

Gain Block/DVGA

Gain Block/DVGA

RF Out

RF In

Freq

LO In

IFRxI

IFRxQ

LO In

IFTxI

IFTxQ

RxVCO

Cost •  Competing GaAs and SiGe solutions aggressively driving down component

pricing •  Ex: VCO pricing over last 2 years: $18à$11à$8 future •  Total RF BOM dropping 10%+ yr/yr •  Industry-wide developments in mm wave will drive substantially lower cost

components in a few years. Output Power •  Higher power components for traditional bands, enabling longer link lengths,

higher data rates •  Higher power components to enable longer links, higher data rates,

antennas considerations Bandwidth, Integration, Linearity

•  SiGe (silicon) trend towards integrated ‘system-on-chip’ parts •  SiGe has unit price cost advantage, but higher development investment and market scale challenge •  GaAs, GaN chips trending towards higher linearity, impacts to data rate, efficiency, … Power Consumption •  GaN has lead on power efficiency, currently limited to lower frequencies <20GHz in volume •  Higher linearity parts to enable more power efficient systems 5 Years Out, Key Expectations •  >50% reduction in components pricing, particularly in mm wave •  Increased integration in backhaul chipsets, but no all-in-one chip for all bands •  Substantial Increase in cost effective chipset solutions in all bands, increased R&D focus on V, E band. •  Increasing GaN portfolios at higher frequencies

Thank You