Revision of EUV Mask ITRS Roadmap (LITH6) Long He (SMT/INTC), Frank Goodwin (SMT), Patrick Kearney (SMT), Greg McIntyre IBM, Emily Gallagher (IBM), Pei-yang Yan (Intel), Brian Cha (Samsung), Obert Wood (GF), Pawitter Mangat (GF), Jim Wiley (ASML), John Zimmerman (ASML), Kazuya Ota (Nikon), Shusuke Yoshitake (Nuflare), Yoshiaki Ikuta (AGC), Patrick Naulleau (LBNL), Naoya Hayashi (DNP), Franklin Kalk (Toppan Photomask) October 6, 2013, Toyama, Japan
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Revision of EUV Mask ITRS
Roadmap (LITH6)
Long He (SMT/INTC), Frank Goodwin (SMT), Patrick Kearney (SMT),
Greg McIntyre IBM, Emily Gallagher (IBM), Pei-yang Yan (Intel),
Brian Cha (Samsung), Obert Wood (GF), Pawitter Mangat (GF), Jim Wiley (ASML),
John Zimmerman (ASML), Kazuya Ota (Nikon), Shusuke Yoshitake (Nuflare),
Yoshiaki Ikuta (AGC), Patrick Naulleau (LBNL), Naoya Hayashi (DNP),
Franklin Kalk (Toppan Photomask)
October 6, 2013, Toyama, Japan
2011 LITH6 EUVL Mask Requirements
Summary of 2013 LITH6 Revision
Row Description Revision / Addition
1 8x magnification (new) 8x mask itrs’d for 2019 insertion
2 Soft defect (new) Requirement identical to hard defect
3 Maximum blank defect size with
mitigation (new)
Values of the spec = Minimum primary
feature size
4 ML roughness (new) RSM = 0.05 nm for all years
5 Alternating PSM phase MTT and
uniformity (new)
Requirement identical to optical mask
6 Attenuated PSM absorber thickness
MTT and uniformity (new)
Targeted to be consistent with optical
mask, but leakage and phase specified
through absorber thickness
7 CD uniformities Relaxed by ~25% (back to optical mask)
8 Absorber thickness uniformity Tightened by 20%
9 Substrate defect Specified to 20 nm for all years
10 Updated / added notes Updated for clarity and simplicity
Summary of 2013 LITH6 Revision
Other Items Visited Consensus
1 EUV pellicle Not included: Pellicle is in its feasibility study
phase. Pellicle-less protection remains to be the
primary approach.
2 Double / multiple patterning No need: No EUV-specific requirement beyond
timeline
3 Backside defect Not included: Impact to overlay may be
implementation-specific
4 Data volume No significant change needed at this time, but
revisit in future revisions
Mask Related Litho Chapter Revision
Four mask topics will be discussed in the Chapter: