General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights. Users may download and print one copy of any publication from the public portal for the purpose of private study or research. You may not further distribute the material or use it for any profit-making activity or commercial gain You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Downloaded from orbit.dtu.dk on: Jun 08, 2020 Reversible hysteresis inversion in MoS2 field effect transistors Kaushik, Naveen; Mackenzie, David M. A.; Thakar, Kartikey; Goyal, Natasha; Mukherjee, Bablu; Bøggild, Peter; Petersen, Dirch Hjorth; Lodha, Saurabh Published in: Npj 2d Materials and Applications Link to article, DOI: 10.1038/s41699-017-0038-y Publication date: 2017 Document Version Early version, also known as pre-print Link back to DTU Orbit Citation (APA): Kaushik, N., Mackenzie, D. M. A., Thakar, K., Goyal, N., Mukherjee, B., Bøggild, P., Petersen, D. H., & Lodha, S. (2017). Reversible hysteresis inversion in MoS 2 field effect transistors. Npj 2d Materials and Applications, 1(1), [334]. https://doi.org/10.1038/s41699-017-0038-y
12
Embed
Reversible hysteresis inversion in MoS2 field effect transistors · Supplementary Information Reversible Hysteresis Inversion in MoS 2 Field E ect Transistors Naveen Kaushik,1 David
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.
Users may download and print one copy of any publication from the public portal for the purpose of private study or research.
You may not further distribute the material or use it for any profit-making activity or commercial gain
You may freely distribute the URL identifying the publication in the public portal If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.
Downloaded from orbit.dtu.dk on: Jun 08, 2020
Reversible hysteresis inversion in MoS2 field effect transistors
Kaushik, Naveen; Mackenzie, David M. A.; Thakar, Kartikey; Goyal, Natasha; Mukherjee, Bablu; Bøggild,Peter; Petersen, Dirch Hjorth; Lodha, Saurabh
Published in:Npj 2d Materials and Applications
Link to article, DOI:10.1038/s41699-017-0038-y
Publication date:2017
Document VersionEarly version, also known as pre-print
Link back to DTU Orbit
Citation (APA):Kaushik, N., Mackenzie, D. M. A., Thakar, K., Goyal, N., Mukherjee, B., Bøggild, P., Petersen, D. H., & Lodha,S. (2017). Reversible hysteresis inversion in MoS
2 field effect transistors. Npj 2d Materials and Applications,