Reliability and Modeling in Harsh Environments for Space Applications Farzan Jazaeri Christian Enz Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL) MOS AK
Reliability and Modeling in Harsh Environments for Space Applications
Farzan Jazaeri Christian Enz
Integrated Circuits Laboratory (ICLAB), Ecole Polytechnique Fédérale de Lausanne (EPFL)
MOS AK
Outline
● Harsh Environments ● Radiation Effects on Electronics
● Physics-based modeling and characterization ● Ionizing and Non-ionizing Radiations ● Radiation Environment Close to Earth ● Radiation Effects on MOSFETs
● Low Temperature (Cryogenic) Electronics ● Physics-based modeling and characterization ● Compact models
Farzan Jazaeri | 2018
Outline
● Harsh Environments ● Radiation Effects on Electronics
● Physics-based modeling and characterization ● Ionizing and Non-ionizing Radiations ● Radiation Environment Close to Earth ● Radiation Effects on MOSFETs
● Low Temperature (Cryogenic) Electronics ● Physics-based modeling and characterization ● Compact models
Farzan Jazaeri | 2018
Extreme Harsh Environments [1]
Radiativestresses• CosmicraysandVanAllenbeltsTemperatureMechanicalstresses• Vibration,Shock,andpressureChemical• Saltwater,Moisture,Noxiousgases
CMS event ATLAS event
Colliding Galaxies
Supernova Active Galactic
Farzan Jazaeri | 2018
Khanna,VinodKumar,“Operatingelectronicsbeyondconventionallimits,”IOPPublishing,2017.
Images:NASA
Earth Orbiter Venus
Europa Mars Rover
Lifetime: min/hrs (on surface)
TID ~7 Mrad
– 145 º C
Lifetime: ~1 hr (on surface)
+470 º C TID ~7 krad
TID
0.1 - 0.3 krad
LEO: 1 - 3 yrs (500 - 1500 cycles)
GEO: 10 - 15 yrs (3500 - 5500 cycles)
10 - 15 krad
0 º C 50 º C
5 krad /yr
Lifetime: 90 days
– 125 º C +25 º C
Earth Orbiter Venus
Europa º
Lifetime: ~1 hr (on surface)
+470 º C TID ~7 krad
Lifetime: ~1 hr (on surface)
+470 º C TID ~7 krad
TID
0.1 - 0.3 krad
LEO: 1 - 3 yrs (500 - 1500 cycles)
GEO: 10 - 15 yrs (3500 - 5500 cycles)
10 - 15 krad
0 º C 50 º C
5 krad /yr
Lifetime: 90 days
– 125 º C +25 º C
Farzan Jazaeri | 2018
(Images:NASA)
Extreme Harsh Environments [2]
Outline
● Harsh Environment ● Radiation Effects on Electronics
● Physics-based modeling and characterization ● Ionizing and Non-ionizing Radiations ● Radiation Environment Close to Earth ● Radiation Effects on MOSFETs
● Low Temperature (Cryogenic) Electronics ● Physics-based modeling and characterization ● Compact models
Farzan Jazaeri | 2018
Non-ionizing and Ionizing Radiations
Non-ionizingiselectromagneticradiationthatdoesnotcarryenoughenergyperquantum(photonenergy)toionizeatomsormolecules.Ionizingradiationisradiationthatcarriesenoughenergytoliberateelectronsfromatomsormoleculesmadeupofenergeticsubatomicparticles,ionsoratomsmovingathighspeeds,andelectromagneticwaves.
Farzan Jazaeri | 2018
RadiationEffects:• TotalIonizingDose(TID)
• longtermfailure• timedependent,
• SingleEventEffects(SEE)• aninstantaneousfailure,• describedbyameantime,• Softandharderrors
• Canpartiallymitigatewithshielding
Radiation Effects on MOSFETs
Image for ATLAS from CERN: Higherleveloftotal ionizingdose(1Gradfortheinnermostcomponents)
1𝐺𝑟𝑎𝑑=1𝑒7𝐺𝑦=1𝑒7𝐽/𝑘𝑔
Farzan Jazaeri | 2018
- - - - - - - - -
G
Source Drain
Gate Drain Source
Substrate (p-type)
STI
Total Ionizing radiation effects on MOSFETs
IDleak.parIDleak.main
IDleak.par
SG
D
Pre
-irra
diat
ion
Dra
in C
urre
nt (L
og)
Gate Voltage
• Mobility Degradation • Subthreshold Swing Degradation • Shift in threshold Voltage • Leakage Current
EffectsofQotandQitinalloxides
Farzan Jazaeri | 2018
Farzan Jazaeri et al., ”Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs,” IEEE Journal of the Electron Devices Society, 2018
- - - - - - - - -
G
Source Drain
Gate Drain Source
Substrate (p-type)
STI
+ + + + + + + + + + + + + + + +
+ +
+ +
+ + + + + + +
+ +
+ +
+
+ + + + + + +
+ +
+ +
+
Total Ionizing radiation effects on MOSFETs
Pre
-irra
diat
ion
Dra
in C
urre
nt (L
og)
Gate Voltage
EffectsofQotandQitinalloxides
Farzan Jazaeri | 2018
Farzan Jazaeri et al., ”Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs,” IEEE Journal of the Electron Devices Society, 2018
IDleak.parIDleak.main
IDleak.par
SG
D
• Mobility Degradation • Subthreshold Swing Degradation • Shift in threshold Voltage • Leakage Current
- - - - - - - - -
G
Source Drain
Gate Drain Source
+ +
+ +
+ + + + + + +
+ +
+ +
+
Substrate (p-type)
STI
+ + + + + + + + + + + + + + + + + + + + + + +
+ +
+ +
+
Total Ionizing radiation effects on MOSFETs
Pre
-irra
diat
ion
Dra
in C
urre
nt (L
og)
Gate Voltage
EffectsofQotandQitinalloxides
Farzan Jazaeri | 2018
Farzan Jazaeri et al., ”Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs,” IEEE Journal of the Electron Devices Society, 2018
IDleak.parIDleak.main
IDleak.par
SG
D
• Mobility Degradation • Subthreshold Swing Degradation • Shift in threshold Voltage • Leakage Current
Ionizing radiation effects on 28nm MOSFETs
C.-M. Zhang Farzan Jazaeri et al., "Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28-nm Bulk MOSFETs," IEEE TNS, 2017.
Farzan Jazaeri | 2018
C.-M. Zhang, Farzan Jazaeri et al., "Impact of GigaRad Ionizing Dose on 28 nm Bulk MOSFETs for Future HL-LHC," in 2016 46th European Solid-State Device Research Conference (ESSDERC), 2016.
VGS=0 V Test chip under probes Bias for irra.: Vgs=Vds=1.2V
Ionizing radiation effects on 28nm MOSFETs
Farzan Jazaeri | 2018
Farzan Jazaeri et al., ”Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs,” IEEE Journal of the Electron Devices Society, 2018
Ionizing radiation effects on FinFETs
Farzan Jazaeri | 2018
Analyticalmodel(lines)andTCADsimulations(markers)
Ionizing radiation effects on FinFETs
Farzan Jazaeri | 2018
Uniformdistributionofinterfacetrapdensity(lines)andTCADsimulations(markers)
Farzan Jazaeri et al., ”Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs,” IEEE Journal of the Electron Devices Society, 2018
Outline
● Harsh Environments ● Radiation Effects on Electronics
● Physics-based modeling and characterization ● Ionizing and Non-ionizing Radiations ● Radiation Environment Close to Earth ● Radiation Effects on MOSFETs
● Low Temperature (Cryogenic) Electronics ● Physics-based modeling and characterization ● Compact models
Farzan Jazaeri | 2018
Introduction
● Cryo-characterization ● Physics-based Cryo-MOS model ● Compact models (EKV, BSIM6, UTSOI)
● Quantify cryogenic impact on circuit design Figures-of-Merit
Cryogenic MOS transistor models are essential to assess speed-power-noise trade-offs during design of cryogenic qubit control circuits.
Cryo?
Farzan Jazaeri | 2018
28 nm Bulk CMOS Characterization
Type W/L T[K]
nMOS 3μm/1μm 4.2,300
pMOS 3μm/1μm 4.2,77,300
nMOS 1μm/90nm 4.2,77,300
nMOS 3μm/28nm 4.2,300
nMOS 300nm/28nm 4.2,77,300
Measured devices (28 nm Bulk CMOS Process) Sample chip
Measured devices and Sample chip
Farzan Jazaeri | 2018
Arnout Beckers, Farzan Jazaeri, Christian Enz, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.
28 nm Bulk CMOS Characterization
Transfer characteristics
Farzan Jazaeri | 2018
Arnout Beckers, Farzan Jazaeri, Christian Enz, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.
28 nm Bulk CMOS Characterization
Transfer characteristics
Farzan Jazaeri | 2018
Arnout Beckers, Farzan Jazaeri, Christian Enz, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.
28 nm Bulk CMOS Characterization
Transfer characteristics
Farzan Jazaeri | 2018
Arnout Beckers, Farzan Jazaeri, Christian Enz, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.
Parameter Extraction: Subthreshold Swing
𝑆𝑆 (𝑚𝑉/𝑑𝑒𝑐)= 𝐾𝑇/𝑞 ×ln(10)×nn=(1+ 𝐶↓𝑑 /𝐶↓𝑜𝑥 )
Farzan Jazaeri | 2018
Parameter Extraction: Subthreshold Swing
Subthreshold swing
o ΔSSlong ~ 10 mV/dec at 4.2 K and 300 K
𝑆𝑆 (𝑚𝑉/𝑑𝑒𝑐)= 𝐾𝑇/𝑞 ×ln(10)×nn=(1+ 𝐶↓𝑑 /𝐶↓𝑜𝑥 )
Farzan Jazaeri | 2018
Parameter Extraction: Subthreshold Swing
Subthreshold swing
o ΔSSlong ~ 10 mV/dec at 4.2 K and 300 K
𝑆𝑆 (𝑚𝑉/𝑑𝑒𝑐)= 𝐾𝑇/𝑞 ×ln(10)×nn=(1+ 𝐶↓𝑑 /𝐶↓𝑜𝑥 )
Farzan Jazaeri | 2018
Parameter Extraction: Subthreshold Swing
Subthreshold swing
o ΔSSlong ~ 10 mV/dec at 4.2 K and 300 K o ΔSSshort ~ 30 mV/dec at 4.2 K and 300 K o Short channel effects (~ 20 mV/dec) T-
independent
Farzan Jazaeri | 2018
Cryogenic Physics-based Modeling
will affect the ● Subthreshold swing ● On-state current, leakage
current ● Threshold voltage ● Mobility
● Incomplete ionization, 𝑁↓𝐴↑− (𝑇)
100 mK − 77 K
● Decreased phonon scattering ● Hot-carrier effects
● Fermi–Dirac and Boltzmann statistics (𝑇) ● Intrinsic carrier concentration 𝑛↓𝑖 (𝑇) ● Band gap widening, 𝐸↓𝑔 (𝑇) ● Velocity saturation, Δφms, Thermal voltage (𝑇)
Important phenomena
● Quantum confinement
● Dominant impurity / surface roughness scattering
● Interface charge trapping, 𝐷↓𝑖𝑡
Farzan Jazaeri | 2018
A.Beckers,F.JazaeriandC.Enz,"CryogenicMOSTransistorModel,"inIEEETransactionsonElectronDevices,2018.FarzanJazaeriandJean-MichelSallese,“ModelingNanowireandDouble-GateJunctionlessField-EffectTransistors,”CambridgeUniversityPress,April2018.
Physics-based Modeling: Model Overview Interface charge traps Reduced phonon scattering
Mobility reduction f(VG)
Incomplete ionization
BCs: • Continuity of dielectric displacement vectors • Bulk charge neutrality
• Mobile charge:
• Current (linear regime):
• Maxwell-Boltzmann validity??
𝜵↑𝟐 𝜳=− 𝝔/𝜺↓𝑺𝒊
Farzan Jazaeri | 2018
Physics-based Modeling
Model
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Compact Modeling: BSIM6
BSIM6 Model Card Extraction at 4.2 K
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Compact Modeling: Simplified EKV
1. Long-channel model validated on 28-nm process at 4.2 K 2. Simple expressions 3. Few parameters 4. capture physical effects 5. Fitting parameters Arnout Beckers, et al, “Cryogenic Characterization of 28 nm Bulk CMOS
Technology for Quantum Computing,” ESSDERC2017.
Farzan Jazaeri | 2018
Compact Modeling: Simplified EKV
Arnout Beckers, et al, “Cryogenic Characterization of 28 nm Bulk CMOS Technology for Quantum Computing,” ESSDERC2017.
1. Short-channel model validated on 28-nm process at 4.2 K 2. Simple expressions 3. Few parameters 4. capture physical effects 5. Fitting parameters
Farzan Jazaeri | 2018
Farzan Jazaeri | 2018
Thankyouforyourattention!
References
1. FarzanJazaeriandJean-MichelSallese,“ModelingNanowireandDouble-GateJunctionlessField-EffectTransistors,”CambridgeUniversityPress,April2018.
2. A.Beckers,F.Jazaeri,etal."CharacterizationandModelingof28-nmFDSOICMOSTechnologydowntoCryogenicTemperatures,"Solidstateelectronics,2018.
3. A. Beckers, F. Jazaeri and C. Enz, "CryogenicMOS TransistorModel," in IEEE Transactions onElectronDevices,2018.
4. A. Beckers, F. Jazaeri, A. Ruffino, C. Bruschini, A. Baschirotto and C. Enz, "Cryogeniccharacterizationof28nmbulkCMOStechnologyforquantumcomputing,"201747thEuropeanSolid-StateDeviceResearchConference(ESSDERC),Leuven,2017,pp.62-65.
5. A. Beckers, F. Jazaeri and C. Enz, "Characterization and Modeling of 28 nm Bulk CMOSTechnologydownto4.2K,"inIEEEJournaloftheElectronDevicesSociety.
6. A.Beckers, F. Jazaeri,H. Bohuslavskyi, L.Hutin, S.De Franceschi andC. Enz, "Design-orientedmodelingof28nmFDSOICMOStechnologydownto4.2Kforquantumcomputing,"2018JointInternational EUROSOI Workshop and International Conference on Ultimate Integration onSilicon(EUROSOI-ULIS),Granada,2018,pp.1-4.
7. F.Jazaeri,C.-M.Zhang,A.Pezzotta,andC.Enz,”Charge-BasedModelingofRadiationDamageinSymmetricDouble-GateMOSFETs,”IEEEJournaloftheElectronDevicesSociety,2018.
8. C.-M. Zhang, F. Jazaeri, et al., ”CharacterizationofGigaRadTotal IonizingDose andAnnealingEffectson28-nmBulkMOSFETs,”IEEETransactionsonNuclearScience,2017.
Farzan Jazaeri | 2018
References
1. C.-M.Zhang,F.Jazaerietal.,”CharacterizationandModelingofGigaRad-TID-InducedDrainLeakageCurrentina28-nmBulkCMOSTechnology,”acceptedin2018IEEENuclearandSpaceRadiationEffectsConference(NSREC),2018.
2. C.-M.Zhang,F.Jazaeri,etal.,”Totalionizingdoseeffectsonanalogperformanceof28nmbulkMOSFETs,”in201747thEuropeanSolid-StateDeviceResearchConference(ESSDERC),2017.
3. C.-M.Zhang,F.Jazaeri,etal.,”GigaRadtotalionizingdoseandpost-irradiationeffectson28nmbulkMOSFETs,”in2016IEEENuclearScienceSymposium(NSS),2016.
4. A.Pezzotta,C.-M.Zhang,F.Jazaeri,C.Bruschini,G.Borghello,F.Faccio,S.Mattiazzo,A.Baschirotto,C.Enz,”ImpactofGigaRadIonizingDoseon28nmbulkMOSFETsforfutureHL-LHC,”in201646thEuropeanSolid-StateDeviceResearchConference(ESSDERC),2016.
5. Khanna,VinodKumar,“Operatingelectronicsbeyondconventionallimits,”IOPPublishing,2017.
Farzan Jazaeri | 2018
High Temperature Electronics
Farzan Jazaeri | 2018
Sourcesofionizingradiationininterplanetaryspace
Khanna,VinodKumar,“Operatingelectronicsbeyondconventionallimits,”IOPPublishing,2017. Image:NASA
SolarOrbiter
Impact on Analog Figures-of-Merit: Gm/ID
1. Simple model of current efficiency at 4.2 K validated on a 28-nm process 2. The 𝑮↓𝒎 ∕𝑰↓𝑫 -characteristic is the basis for additional analog metrics (noise, gain, linearity,
…), as well as transistor sizing and biasing.
22spec spec spec ox T TW kTI I I n C U UL q
µ= ⋅ = ⋅ ⋅ ⋅ =W Wwith and
Farzan Jazaeri | 2018
Compact Modeling: BSIM6
Cryo?
Farzan Jazaeri | 2018
Compact Modeling: BSIM6
Cryo?
28 nm, 4.2 K
BSIM6
BSIM6’s temperature scaling cannot catch SS at 4.2 K for 28 nm.
For long channel T-scaling works.
Farzan Jazaeri | 2018
Radiation Environment Close to Earth
Phoenix Mars Lander
Solar Orbiter
VanAllenbelts:ParticlestrappedintheVanAllenbeltsi.e.energeticchargedparticles,mostofwhichoriginatefromthesolarwind(protons,electrons,andheavyions).Cosmicrays:Galacticcosmicrayparticlesandparticlesfromsolarevents(massejectionsandsolarflares).
Farzan Jazaeri | 2018
ImagesCredit:NASA