REDUCING TSV INTEGRATION COST USING F.A.S.T. …semieurope.omnibooksonline.com/2016/semicon_europa/TechLounge/2… · reducing tsv integration cost using f.a.s.t. deposition solution

REDUCING TSV INTEGRATION COST USING

F.A.S.T. DEPOSITION SOLUTION

Julien Vitiello

C.E.O.

27/10/2016

KOBUS & F.A.S.T.An introduction

CONFIDENTIAL

KOBUS AT A GLANCE

Formerly Altatech Deposition division,

On the market since 2004, with more than 100 systems shipped

we develop advanced deposition system since 2007

We have developed patented technology called F.A.S.T.®

ALD film performances at CVD speed

Unique film properties

The solution when thick and conformal layers are required

Skilled team combining design manufacturing and service

> 80% Ph.D and Engineers

> 100 systems shipped

Hardware, software & process backgrounds from leading S/C equipment suppliers

or S/C manufacturer.

Our Facilities for manufacturing and application lab

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1200m² Class ISO 7 cleanroom Registered ISO 9001-2008 Assembly workshops Analysis area (SEM, optical test bench …) Location: Grenoble France

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FAST ATOMIC SEQUENTIAL TECHNOLOGY 1/2

At the crossroads of ALD and CVD deposition techniques

Unique process control

TEMPORAL CONTROL

• Better film properties

SEPARATE SPECIES INLET

• No parasitic reactions

HIGH REACTION RATE

• Lower precursor consumption

• Higher deposition rate

PRECISE VOLUME INTRODUCTION

• Repeatability

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UNIQUE PROCESS CAPABILITIES

CONFIDENTIAL

FAST ATOMIC SEQUENTIAL TECHNOLOGY 2/2

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ALD FILM PERFORMANCES AT CVD SPEED

TSV SOLUTIONWhere Thick & Conformal matters

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KOBUS TSV SOLUTION

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F.A.S.T.SiO2

F.A.S.T.TiN/Cu

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UNIQUE F.A.S.T. VALUE

Current market limitations

PVD is used to fill TSV but limited to 10:1 A/R due to poor conformity (%

Thickness at the bottom of TSV versus thickness at the top)

ALD delivers a conformal layer deposition process into TSV but is not

economically viable due to very low deposition rate

F.A.S.T. unique value

FAST is the only solution to deliver highly conformal thick layer into TSV with A/R

> 10:1

FAST is working for both Via Last and Via middle integration scheme (150˚C &

350˚C)

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CONFIDENTIAL

SILICON OXIDE LINER SOLUTION

- TEOS based deposition method

- Deposition at 350°C & 150°C

- Conformality adjustable

- Compatible with hardmask

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SiO2 HARDMASK

F.A.S.T.

SiO2

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SILICON OXIDE LINER SOLUTION

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> 3X THINNER LAYER > 10X FASTER

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TIN BARRIER & CU SEED SOLUTION

Based on TDEAT for TiN barrier and Cupraselect for Cu seed layer

Example with 10:1 aspect ratio vias (10µm wide, 100 µm high)

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Top: 200 nm Middle: 200 nm Bottom: ~190 nm

> 95% CONFORMALILTY ON 10:1 ASPECT RATIO

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TIN BARRIER & CU SEED SOLUTION

Patented in-situ Cu cleaning process

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Bottom chamberTop chamber

MANDATORY FOR PRODUCTION

EFFICIENT CHAMBER CLEANING

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TIN BARRIER & CU SEED SOLUTION

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÷10 THICKNESS FOR CMP

CONCLUSION

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CONCLUSION

Compatible with Via Last and Via Middle approach

STANDARD MATERIAL USED

150 & 350°C VERSION

With conformality management:

INSENSITIVE TO ETCH PROFILE

CMP TIME DRASTICALLY REDUCED

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DEDICATED SOLUTION TO TSV NEED

COST BREAKDOWN ON INTEGRATION

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ANY QUESTIONS ?

VISIT US - BOOTH #538

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