-
Recombination-induced stacking fault degradation of 4 H -SiC
merged- P i N -SchottkydiodesJ. D. Caldwell, R. E. Stahlbush, E. A.
Imhoff, K. D. Hobart, M. J. Tadjer, Q. Zhang, and A. Agarwal
Citation: Journal of Applied Physics 106, 044504 (2009); doi:
10.1063/1.3194323 View online: http://dx.doi.org/10.1063/1.3194323
View Table of Contents:
http://scitation.aip.org/content/aip/journal/jap/106/4?ver=pdfcov
Published by the AIP Publishing Articles you may be interested in
On the driving force for recombination-induced stacking fault
motion in 4H–SiC J. Appl. Phys. 108, 044503 (2010);
10.1063/1.3467793 Propagation of stacking faults from surface
damage in SiC PiN diodes Appl. Phys. Lett. 88, 062101 (2006);
10.1063/1.2172015 Properties and origins of different stacking
faults that cause degradation in SiC PiN diodes J. Appl. Phys. 95,
1485 (2004); 10.1063/1.1635996 Recombination-enhanced extension of
stacking faults in 4H-SiC p-i-n diodes under forward bias Appl.
Phys. Lett. 81, 883 (2002); 10.1063/1.1496498 Structure of
recombination-induced stacking faults in high-voltage SiC p–n
junctions Appl. Phys. Lett. 80, 749 (2002); 10.1063/1.1446212
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
http://scitation.aip.org/content/aip/journal/jap?ver=pdfcovhttp://oasc12039.247realmedia.com/RealMedia/ads/click_lx.ads/www.aip.org/pt/adcenter/pdfcover_test/L-37/884760910/x01/AIP-PT/Asylum_JAPArticleDL_121014/AIP-JAD-Cypher1.jpg/47344656396c504a5a37344142416b75?xhttp://scitation.aip.org/search?value1=J.+D.+Caldwell&option1=authorhttp://scitation.aip.org/search?value1=R.+E.+Stahlbush&option1=authorhttp://scitation.aip.org/search?value1=E.+A.+Imhoff&option1=authorhttp://scitation.aip.org/search?value1=K.+D.+Hobart&option1=authorhttp://scitation.aip.org/search?value1=M.+J.+Tadjer&option1=authorhttp://scitation.aip.org/search?value1=Q.+Zhang&option1=authorhttp://scitation.aip.org/search?value1=A.+Agarwal&option1=authorhttp://scitation.aip.org/content/aip/journal/jap?ver=pdfcovhttp://dx.doi.org/10.1063/1.3194323http://scitation.aip.org/content/aip/journal/jap/106/4?ver=pdfcovhttp://scitation.aip.org/content/aip?ver=pdfcovhttp://scitation.aip.org/content/aip/journal/jap/108/4/10.1063/1.3467793?ver=pdfcovhttp://scitation.aip.org/content/aip/journal/apl/88/6/10.1063/1.2172015?ver=pdfcovhttp://scitation.aip.org/content/aip/journal/jap/95/3/10.1063/1.1635996?ver=pdfcovhttp://scitation.aip.org/content/aip/journal/apl/81/5/10.1063/1.1496498?ver=pdfcovhttp://scitation.aip.org/content/aip/journal/apl/80/5/10.1063/1.1446212?ver=pdfcov
-
Recombination-induced stacking fault degradation of
4H-SiCmerged-PiN-Schottky diodes
J. D. Caldwell,1,a� R. E. Stahlbush,1 E. A. Imhoff,1 K. D.
Hobart,1 M. J. Tadjer,2
Q. Zhang,3 and A. Agarwal31Naval Research Laboratory, 4555
Overlook Ave., S.W., Washington, DC 20375, USA2Department of
Electrical Engineering, University of Maryland, College Park,
Maryland 20740, USA3Cree, Inc., 3026 E Corwallis Rd., Research
Triangle Park, North Carolina 27709, USA
�Received 13 April 2009; accepted 7 July 2009; published online
21 August 2009�
The increase in the forward voltage drop observed in 4H-SiC
bipolar devices due torecombination-induced stacking fault �SF�
creation and expansion has been widely discussed in theliterature.
It was long believed that the deleterious effect of these defects
was limited to bipolardevices. Recent reports point to similar
degradation in 4H-SiC DMOSFETs, a primarily unipolardevice, which
was thought to be SF-related. Here we report similar degradation of
both unipolar andbipolar operation of merged-PiN-Schottky diodes, a
hybrid device capable of both unipolar andbipolar operation.
Furthermore, we report on the observation of the
temperature-mediation of thisdegradation and the observation of the
current-induced recovery phenomenon. These observationsleave little
doubt that this degradation is SF-induced and that if SFs are
present, that they willadversely affect both bipolar and unipolar
characteristics. © 2009 American Institute of Physics.�DOI:
10.1063/1.3194323�
I. INTRODUCTION
Silicon carbide is a desirable material for high powerand
temperature bipolar and unipolar electronic devices,such as high
blocking voltage PiN and Schottky diodes, re-spectively. However,
electron-hole pair �ehp� recombinationat basal plane dislocations
�BPDs� in the drift layer of SiCbipolar devices induces the
nucleation and expansion ofrecombination-induced stacking faults
�SFs�. Continued ehpinjection typically causes the SFs to expand,
which inducesan increase in the forward voltage drop �Vf�.
1 Recently,Agarwal et al.2 determined that when the body diode
of aDMOSFET was forward biased, an increase in the Vf similarto the
Vf drift observed in 4H-SiC PiN diodes was observed.Furthermore,
this drift was coupled with a reduction in themajority-carrier
conduction current when the diffused metaloxide semiconductor field
effect transistor �DMOSFET� wasoperated in unipolar mode and also
led to an increase in theleakage current when the DMOSFET was
operated in block-ing mode. From these results, the authors implied
that thisdegradation was possibly due to the creation and
expansionof SFs induced via the ehp injection that occurred during
theforward biasing of the body diode. Further investigations
byCaldwell et al.3 illustrated that annealing of the
degradedDMOSFETs for 48 h in nitrogen atmosphere at 300 °C ledto an
almost complete recovery of the Vf drift in the bodydiode I-V
characteristics and of the majority-carrier conduc-tion current.
Such observations are consistent with theannealing-induced recovery
effects previously reported in4H-SiC PiN diodes.4 These results
both support the observa-tion that SFs could be the cause for the
induced degradationof not only minority carrier electrical
characteristics but alsoin the majority-carrier electrical
characteristics in unipolar
SiC devices. While the evidence is certainly indicative
ofSF-induced degradation, conclusive evidence is still lacking.In
order to determine the validity of this hypothesis, we re-port on
electrical stressing and annealing studies from4H-SiC
merged-PiN-Schottky �MPS� diodes, studying thecharacteristic
features of this degradation in comparison tothose of the better
understood degradation effects found in4H-SiC PiN diodes, as well
as the annealing-induced,temperature-mediated, and current-induced
Vf drift recover-ies that have been reported in 4H-SiC bipolar
devices byCaldwell et al.,4,5 which conclusively illustrate the
predomi-nant role that SFs play in this degradation phenomenon.
II. EXPERIMENT
The devices studied were 10 kV, 0.04 cm2 4H-SiC MPSdiodes �Fig.
1�a��, which were fabricated by Cree, Inc. A full3 in. wafer of
alternating MPS and PiN diodes was fabri-cated. The wafer consisted
of an epitaxially grown 125 �mthick, ND=5–6�10
14 cm−3 drift layer, followed by alumi-num ion implanted p+
��5�1019 cm−3� junctions, boronjunction termination extensions
�JTEs�, and nitrogen-dopedchannel stops. Following a �1600 °C, 5
min implant acti-vation, a 0.6 �m high-temperature field oxide was
depos-ited. Prior to the p+ implantation, but following a
shallowreactive ion etching etching of the zero-level mask, a
UVphotoluminescence �UV-PL� image map was acquired usingthe
technique reported by Stahlbush et al.,6 using a 780 nmlong pass
filter to highlight the BPDs and threading disloca-tions present
within the various device regions. This alloweddirect comparison
between the individual device electricalcharacteristics and their
response to electrical stressing withthe BPD density within the
device. Contact to the device wasenabled through the 1000 Å Ni
backside Ohmic contact, a400 Å Al/Ni anode contact to the p+
�annealed at 1000 °C�a�Electronic mail:
[email protected].
JOURNAL OF APPLIED PHYSICS 106, 044504 �2009�
0021-8979/2009/106�4�/044504/6/$25.00 © 2009 American Institute
of Physics106, 044504-1
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
http://dx.doi.org/10.1063/1.3194323http://dx.doi.org/10.1063/1.3194323http://dx.doi.org/10.1063/1.3194323
-
and a Ti Schottky contact. An anode overlayer of 1500 Å Ti,4 �m
Al and 2 �m Au was subsequently deposited andsurface passivation
was accomplished via polyimide deposi-tion.
Pulsed I-V measurements were recorded at 30, 60, 100,150, and
200 °C following each successive stressing or an-nealing procedure
to monitor any changes in the electricalcharacteristics that were
induced. All I-V measurements wereperformed using a Tektronix 371B
high-power curve tracer,operated in pulsed-current mode. This
instrument providesshort �250 �s� current pulses at a duty cycle of
0.75%, si-multaneously monitoring the voltage at each applied
current.In this article, each trace represents the average of three
con-secutive I-V traces, with each of the three curves being
com-pared to verify that no instabilities were present.
Controlexperiments illustrated that the process of acquiring
thepulsed I-V curves did not induce any observable change inthe
device electrical characteristics, therefore all changes ob-served
can be attributed to the stressing procedures illus-trated
below.
The MPS diodes were stressed at 3 A dc �75 A /cm2�using an HP
6024A 200 W power supply and a high powerpogo-pin probe for the
current-source contact at nominallyroom temperature. In the case of
current-induced recoverymeasurements that involve ehp injection at
elevated tempera-tures, a standard hot chuck was used and
subsequent I-Vmeasurements at room temperature were collected
followingthe removal of the forward-bias and the cooling of the
de-vice. For annealing experiments, the samples were heatedwithin a
nitrogen gas atmosphere in a Centurion VPM NEYvacuum furnace. A
further discussion of these proceduresmay be found in the
literature.4,5,7
III. DISCUSSION
Until recently, it was believed that SFs were the ener-getically
favorable state of the native 4H-SiC lattice. How-ever, following
the reports of Miyanagi et al.8 and Caldwellet al.,4,7 which
illustrated the ability to induce contraction ofSFs via annealing
at temperatures in excess of 300 °C, thishypothesis was clearly no
longer valid. In the case of thelatter work, it was also determined
that a complete and re-peatable recovery of the Vf drift was
observed following an-
nealing at 700 °C for �5 h. Furthermore, it was also ob-served
that if a current was maintained within a heavilyfaulted PiN diode
at an elevated temperature ��250 °C�, acurrent-induced recovery of
the Vf drift occurred.
5 This re-covery was drastically enhanced, both in the magnitude
andin the speed of the recovery, in comparison to the
annealing-induced recovery at that same temperature in the absence
ofinjected ehps. The annealing and current-induced recoveriesof the
Vf drift, most especially the latter, are characteristic ofthe
SF-induced degradation and are not easily explained byannealing of
other types of degradation. A model discussinga possible driving
force for SF motion that is consistent withthese observations is
discussed in the literature.9 Therefore,the observation of these
two effects in electrically degradedunipolar devices would provide
substantial evidence support-ing the Agarwal’s hypothesis.2
Figure 1�a� schematically shows the structure of theMPS diodes.
There is a single anode contact to both theinterdigitated p+
implanted junctions and the n− epitaxy tocreate a hybrid device
providing a low on-state voltage drop,low off-state leakage, fast
switching capabilities and goodhigh temperature characteristics. At
low forward biases andtemperatures, they exhibit minimal
minority-carrier injec-tion, with the electrical properties showing
Schottky-diodebehavior. However, as the temperature and/or forward
bias isincreased, the minority-carrier injection efficiency
improves;therefore the device begins to perform more like a PiN
di-ode. This behavior is clearly illustrated in Fig. 1�b�, whereI-V
traces from a unstressed MPS diode are presented as afunction of
temperature. The knee in the I-V trace that ischaracteristic of MPS
conduction is only pronounced at150 °C and above. At lower
temperatures it is not clearlydelineated as is typical for
implanted p+ anodes.
In order to decipher what role SFs play in the forwardbias
degradation of MPS diodes, three diodes from the PL-mapped wafer
were chosen to provide devices with low,moderate and high BPD
densities. Since SFs are due to fault-ing BPDs, it would be
expected that devices with higherBPD densities would exhibit
significantly increased degrada-tion if SFs were the cause. UV-PL
images of the three diodeschosen are presented in Figs. 2�a�–2�c�,
respectively. TheBPDs may be identified as long white lines6 and
the densities
FIG. 1. �Color online� �a� Cross-sectional schematic of the MPS
diode. �b� I-V curves collected from the MPS diode with the
moderate density of BPDs atvarious temperatures as labeled.
044504-2 Caldwell et al. J. Appl. Phys. 106, 044504 �2009�
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
-
for the three diodes can be estimated as �25, �1000, and�1000
cm−2, respectively. To ensure that the assignment ofthese features
within the UV-PL images was correct, similarimaging and subsequent
electroluminescence imaging �notshown� of the adjacent PiN diodes
at 1 A /cm2 followingforward bias stressing was performed. These
efforts clearlyshowed this assignment to be correct with the long
white linedefects faulting and forming expanding SFs following
con-tinued ehp injection. The white dots in the UV-PL images
arethreading dislocations �both screw and edge�, which do notplay a
significant role in the forward-bias-induced electricaldegradation
discussed here.
Initial pulsed I-V�T� traces were collected as a functionof
temperature from the three MPS diodes prior to stressing,with the
results from the moderate BPD density diode havingbeen presented in
Fig. 1�b�. The diodes were then stressed at75 A /cm2 dc at 30 °C
for periods of 1, 1, 1, 1, 2, 2, 4, and8 min �20 min total�, with
pulsed I-V�T� curves collectedfollowing each successive period.
Presented in Figs.2�d�–2�f� are the corresponding pulsed I-V curves
collectedat 30 °C following each of these stressing periods for
eachof the diodes presented in Figs. 2�a�–2�c�, respectively. It
isclear that the initial Vf and the degree of Vf drift inducedwere
heavily dependent upon the initial BPD density. Pre-sented in Fig.
3 is the change in Vf as a function of injectiontime for the three
diodes at �a� 25 A /cm2 and T=30 °C and�b� 100 A /cm2 and T=200 °C.
These two current densitiesand temperatures were monitored because
the behavior of the
diodes at these conditions was indicative of low and
highminority-carrier injection levels, respectively, as shown
inFig. 1 �the dashed lines designates the 25 and 100 A
/cm2thresholds�. It is evident that there is a strong dependence
ofthe magnitude of the Vf drift on the initial BPD density,which is
indicative of a direct dependence of this degradationon the
creation and expansion of SFs.
In an effort to test this SF-induced degradation further,the MPS
diode wafer was annealed for 288 h at 300 °C,followed by an
additional 96 h at 400 °C, with I-V�T� mea-surements being recorded
at various time intervals �follow-ing the first 96 h 300 °C, after
192 h 300 °C, after additional96 h 400 °C�. Presented in Figs. 4�a�
and 4�b� are I-V tracesrecorded at 30 °C and 200 °C, respectively,
for the diodewith moderate BPD density prior to electrical
stressing�black, solid line�, following 20 min of stressing at75 A
/cm2 dc �blue, dashed line� and following the entireannealing cycle
�red, dash-dotted line�. The blue and redcurved arrows denote the
direction of the shift in the I-Vcurve with electrical stressing
and annealing, respectively. Asshown in Fig. 4�a�, these extended
periods of annealing in-duced a significant, and very close to a
complete, recovery ofthe forward-bias-induced electrical
degradation at room tem-perature �majority carrier
characteristics�. However, in thecase of the I-V measurements at
200 °C, a complete recov-ery in the low injection regime was
observed, while somenonzero shift in the Vf drift in the bipolar
injection regimeremained. This incomplete recovery at high
injection levels
FIG. 2. �Color online� PL images collected from MPS diodes with
�a� low, �b� moderate, and �c� high BPD densities. The images were
collected using a 780nm long-pass filter. ��d�–�f�� Corresponding
I-V traces collected following each subsequent 75 A /cm2 dc
stressing period. The curved arrows indicate thedirection of Vf
drift.
044504-3 Caldwell et al. J. Appl. Phys. 106, 044504 �2009�
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
-
may be due to contact degradation due to the annealing
treat-ments, or may have been due to incomplete annealing of theSFs
due to the lower annealing temperatures used in theseexperiments
�400 °C� in comparison to those in PiN diodes�700 °C� where
complete recovery is observed at all currentlevels. The observation
that such annealing induces a recov-ery of the stressing-induced
electrical degradation of theMPS diodes in both the unipolar and
bipolar injection re-gimes is consistent with the behavior of
4H-SiC bipolar de-vices, such as PiN diodes, where annealing
treatments in N2atmosphere at temperatures as low as 300 °C have
been re-ported to induce a recovery of the SF-induced Vf drift.
4,7,10
The time dependence of the �Vf drift measured at25 A /cm2 and 30
°C and at 100 A /cm2 and 200 °C duringboth the stressing and
annealing procedures discussed aboveis presented in Figs. 5�a� and
5�b�, respectively. From thisfigure, it is clear in both cases that
as the annealing tempera-ture was raised the Vf-drift recovery rate
also increased.From Figs. 5�a� and 5�b� it is clear that in both
the unipolarand bipolar injection regimes that the degradation and
recov-ery occurred in a similar fashion, however, there does
appearto be an additional knee in the bipolar regime early on in
the
stressing procedure. These observations are all consistentwith
the degradation and recovery phenomena reported in4H-SiC PiN
diodes, where again such phenomena have beenclearly linked to SF
expansion and contraction processes.
More conclusive evidence in support or in contradictionof
Agarwal’s hypothesis2 can be established by stressing thedegraded
MPS diodes at elevated temperatures while main-taining the same
current density. Such experiments in PiNdiodes were reported by
Caldwell et al.,5,9–11 and as shown inFig. 6�a�, illustrated that
following an extended period ofstressing at room temperature a
saturation of the Vf drift at avalue denoted as �Vf
sat was observed that correlated with asaturation of the SF
expansion process. However, upon heat-ing the device to 242 °C and
reinitiating the stressing pro-cess at the same current density
actually led to a partial re-covery of the Vf drift and a partial
contraction of the SFs.This phenomenon was referred to as the
“current-inducedrecovery effect.” As shown in Fig. 6�b�, a similar
phenom-enon was observed in the MPS diodes under similar
condi-tions. In this case, the MPS diode with the high initial
BPDdensity was stressed at 75 A /cm2 from its initially unde-graded
state at room temperature for a number of successive
FIG. 3. �Color online� Change in the forward voltage drift ��Vf�
as a function of injection time during successive periods of
forward bias operation of thediodes at 75 A /cm2 for the high
�green triangles�, moderate �red circles�, and low �black boxes�
basal plane dislocation �BPD� densities �a� monitored at30 °C and
25 A /cm2 and �b� 200 °C and 100 A /cm2.
FIG. 4. �Color online� I-V curves of the moderate BPD density
MPS diode prior to �solid, black line� and following 20 min of
electrical stressing at 75 A /cm2�blue, dashed line�, and following
a 244 h 300 °C anneal and a subsequent 96 h 400 °C anneal �red,
dotted line� collected at �a� 30 and �b� 200 °C. Thearrows indicate
the direction of the Vf drift.
044504-4 Caldwell et al. J. Appl. Phys. 106, 044504 �2009�
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
-
periods as described above. As in the PiN diodes, followingsuch
extended periods of electrical injection, the degradationof the
forward voltage response of the diode appears to haveslowed and
possibly begun to approach such a saturationcondition. In any case,
the shapes of the degradation curveswere quite similar to those
observed in PiN diodes. Further,upon heating the MPS diode to 200
°C and then reinitiatingthe 75 A /cm2 injection condition, the MPS
diode, ratherthan continuing to degrade, actually began to recover,
just asin PiN diodes. The large variations in time scales on
whichthese phenomena occurred between the PiN and the MPSdevices
could be attributed to the large variations in the BPDdensities,
significant differences in the conduction mecha-nisms between the
two device types and the large differencesin current injection
levels used for the measurements re-ported here. The observation of
the similar general degrada-tion behavior as a function of
stressing time, the apparentapproaching of the saturation condition
and finally the obser-vation of the current-induced recovery effect
in the MPSdiodes within the majority carrier injection regime
provideextremely strong support for Agarwal’s model.
IV. CONCLUSIONS
We have presented results indicative of SF-induced deg-radation
within MPS diodes. Such degradation was observed
to influence the electrical behavior of the diodes in
regimeswhere both minimal �unipolar� and high �bipolar� levels
ofminority carrier injection are induced. Such observations
areconsistent with those reported by Agarwal et al.,2 where
deg-radation of both minority and majority carrier electrical
char-acteristics of 4H-SiC DMOSFETs were observed followingextended
periods of minority carrier injection into the bodydiode of the
device. Our measurements illustrated that mi-nority carrier
injection into MPS diodes induces a dramaticincreases in the Vf in
both the majority and minority carrierinjection regimes of the I-V
curve. We also illustrated thatannealing of these devices at T�300
°C induced a recoveryof the Vf drift in both regimes. Further it
was reported thatfollowing extended periods of minority carrier
injection thatthe degradation in the forward voltage drift slowed,
similarto the saturation of the Vf drift reported in PiN diodes
andthat the current-induced recovery effect was observed whenthe
heavily degraded MPS diode was stressed at elevatedtemperatures.
This current-induced recovery effect has beenobserved in highly
degraded 4H-SiC PiN diodes and is in-dicative of the SF-induced
electrical changes. These obser-vations leave very little doubt
that SFs are the predominantcause for the observed degradation of
the majority carrierelectrical characteristics that occurs
following extended peri-ods of bipolar injection into primarily
unipolar devices suchas DMOSFETs and MPS diodes.
1M. Skowronski and S. Ha, J. Appl. Phys. 99, 011101 �2006�.2A.
Agarwal, H. Fatima, S. Haney, and S.-H. Ryu, IEEE Electron
DeviceLett. 28, 587 �2007�.
3J. D. Caldwell, R. E. Stahlbush, E. A. Imhoff, O. J. Glembocki,
K. D.Hobart, M. J. Tadjer, Q. C. Zhang, M. K. Das, and A. Agarwal,
2008Spring Meeting of the Materials Research Society �AIP, New
York, 2008�,p. 195.
4J. D. Caldwell, R. E. Stahlbush, K. D. Hobart, O. J. Glembocki,
and K. X.Liu, Appl. Phys. Lett. 90, 143519 �2007�.
5J. D. Caldwell, O. J. Glembocki, R. E. Stahlbush, and K. D.
Hobart, Appl.Phys. Lett. 91, 243509 �2007�.
6R. E. Stahlbush, K. X. Liu, Q. Zhang, and J. J. Sumakeris,
Mater. Sci.Forum 556–557, 295 �2007�.
7J. D. Caldwell, K. X. Liu, M. J. Tadjer, O. J. Glembocki, R. E.
Stahlbush,K. D. Hobart, and F. Kub, J. Electron. Mater. 36, 318
�2007�.
8T. Miyanagi, H. Tsuchida, I. S. Kamata, T. Nakamura, K.
Nkayama,
FIG. 5. �Color online� Change in Vf as a function of stressing
�blue, squares� and annealing �red, circles� times. The temperature
of the corresponding annealsare marked in the figure. The lines
provide a guide to the eyes.
FIG. 6. �Color online� Change in Vf as a function of stressing
time duringcurrent-induced recovery measurements performed on a �a�
PiN diode and�b� the high BPD density MPS diode. Initially, the
diodes were stressed at25 °C at 13.9 and 75 A /cm2, respectively,
�blue circles�. The diodes werethen stressed at the same current at
242 �red squares� and 200 °C, respec-tively �magenta squares�. The
lines provide a guide to the eyes.
044504-5 Caldwell et al. J. Appl. Phys. 106, 044504 �2009�
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
http://dx.doi.org/10.1063/1.2159578http://dx.doi.org/10.1109/LED.2007.897861http://dx.doi.org/10.1109/LED.2007.897861http://dx.doi.org/10.1063/1.2719650http://dx.doi.org/10.1063/1.2824391http://dx.doi.org/10.1063/1.2824391http://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.295http://dx.doi.org/10.4028/www.scientific.net/MSF.556-557.295http://dx.doi.org/10.1007/s11664-006-0038-8
-
R. Ishii, and Y. Sugawara, Appl. Phys. Lett. 89, 062104
�2006�.9J. D. Caldwell, R. E. Stahlbush, M. G. Ancona, O. J.
Glembocki, and K.D. Hobart, “On the Driving Force for
Recombination-Induced StackingFault Formation in 4H-SiC,” Phys.
Rev. B �in press�.
10J. D. Caldwell, R. E. Stahlbush, O. J. Glembocki, K. D.
Hobart, K. X. Liu,and M. J. Tadjer, Mater. Sci. Forum 600–603, 273
�2008�.
11J. D. Caldwell, O. J. Glembocki, R. E. Stahlbush, and K. D.
Hobart, J.Electron. Mater. 37, 699 �2008�.
044504-6 Caldwell et al. J. Appl. Phys. 106, 044504 �2009�
[This article is copyrighted as indicated in the article. Reuse
of AIP content is subject to the terms at:
http://scitation.aip.org/termsconditions. Downloaded to ] IP:
202.28.191.34 On: Tue, 23 Dec 2014 16:08:21
http://dx.doi.org/10.1063/1.2234740http://dx.doi.org/10.4028/0-87849-357-3.273http://dx.doi.org/10.1007/s11664-007-0311-5http://dx.doi.org/10.1007/s11664-007-0311-5
-
本文献由“学霸图书馆-文献云下载”收集自网络,仅供学习交流使用。
学霸图书馆(www.xuebalib.com)是一个“整合众多图书馆数据库资源,
提供一站式文献检索和下载服务”的24 小时在线不限IP
图书馆。
图书馆致力于便利、促进学习与科研,提供最强文献下载服务。
图书馆导航:
图书馆首页 文献云下载 图书馆入口 外文数据库大全 疑难文献辅助工具
http://www.xuebalib.com/cloud/http://www.xuebalib.com/http://www.xuebalib.com/cloud/http://www.xuebalib.com/http://www.xuebalib.com/vip.htmlhttp://www.xuebalib.com/db.phphttp://www.xuebalib.com/zixun/2014-08-15/44.htmlhttp://www.xuebalib.com/