Diode Rapid Switching Emitter Controlled Diode IDV08E65D2 FullPAK with Emitter Controlled Diode Data sheet Industrial Power Control
DiodeRapid�Switching�Emitter�Controlled�Diode
IDV08E65D2FullPAK�with�Emitter�Controlled�Diode
Data�sheet
Industrial�Power�Control
2
IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
Rapid�Switching�Emitter�Controlled�Diode�Features:
•�Electrically�isolated�FullPAK�for�efficient�assembly•�650�V�Emitter�Controlled�technology•�Fast�recovery•�Soft�switching•�Low�reverse�recovery�charge•�Low�forward�voltage•�Qualified�according�to�JESD-022�for�target�applications•�Pb-free�lead�plating;�RoHS�compliant•�Halogen�free�(according�to�IEC�61249-2-21)•�Complete�product�spectrum�and�PSpice�Models:http://www.infineon.com/diode/
Applications:
•�Boost�diode�in�CCM�PFC
A
C
CA
Key�Performance�and�Package�ParametersType Vrrm If Vf,�Tvj=25°C Tvjmax Marking PackageIDV08E65D2 650V 8A 1.6V 175°C E08ED2 PG-TO220-2-22 FP
3
IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
Table�of�Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
Maximum�RatingsFor�optimum�lifetime�and�reliability,�Infineon�recommends�operating�conditions�that�do�not�exceed�80%�of�the�maximum�ratings�stated�in�this�datasheet.
Parameter Symbol Value UnitRepetitive peak reverse voltage VRRM 650 V
Diode�forward�current,�limited�by�TvjmaxTC�=�25°CTC�=�100°C
IF 8.04.0
A
Diode�pulsed�current,�tp�limited�by�Tvjmax IFpuls 24.0 A
Diode surge non repetitive forward currentTC�=�25°C,�tp�=�8.3ms,�sine�halfwave IFSM 60.0 A
Power�dissipation�TC�=�25°C Ptot 27.3 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
Thermal�Resistance
Parameter Symbol Conditions Max.�Value UnitCharacteristic
Diode thermal resistance,1)
junction - case Rth(j-c) 5.50 K/W
Thermal resistancejunction - ambient Rth(j-a) 65 K/W
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Static�Characteristic
Diode forward voltage VF
IF�=�8.0ATvj�=�25°CTvj�=�175°C
--
1.601.65
2.20-
V
Reverse leakage current IRVR�=�650VTvj�=�25°CTvj�=�175°C
--
--
40.02000.0
µA
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Dynamic�Characteristic
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 7.0 - nH
1) Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
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IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Diode�Characteristic,�at�Tvj�=�25°C
Diode reverse recovery time trr - 23 - ns
Diode reverse recovery charge Qrr - 0.11 - µC
Diode peak reverse recovery current Irrm - 7.4 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -3300 - A/µs
Tvj�=�25°C,VR�=�400V,IF�=�8.0A,diF/dt�=�1000A/µs,Lσ�=�35nH,Cσ�=�32pF,switch IPW60R045CP
Diode reverse recovery time trr - 40 - ns
Diode reverse recovery charge Qrr - 0.08 - µC
Diode peak reverse recovery current Irrm - 2.5 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -1300 - A/µs
Tvj�=�25°C,VR�=�400V,IF�=�8.0A,diF/dt�=�200A/µs,Lσ�=�35nH,Cσ�=�32pF,switch IPW60R045CP
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Diode�Characteristic,�at�Tvj�=�175°C/125°C
Diode reverse recovery time trr - 30 - ns
Diode reverse recovery charge Qrr - 0.20 - µC
Diode peak reverse recovery current Irrm - 10.0 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -2200 - A/µs
Tvj�=�175°C,VR�=�400V,IF�=�8.0A,diF/dt�=�1000A/µs,Lσ�=�35nH,Cσ�=�32pF,switch IPW60R045CP
Diode reverse recovery time trr - 58 - ns
Diode reverse recovery charge Qrr - 0.13 - µC
Diode peak reverse recovery current Irrm - 3.8 - A
Diode peak rate of fall of reverserecovery�current�during�tb dirr/dt - -2200 - A/µs
Tvj�=�125°C,VR�=�400V,IF�=�8.0A,diF/dt�=�200A/µs,Lσ�=�35nH,Cσ�=�32pF,switch IPW60R045CP
6
IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
Figure 1. Power�dissipation�as�a�function�of�casetemperature(Tvj≤175°C)
TC,�CASE�TEMPERATURE�[°C]
Ptot ,�POWER�DISSIPATION�[W
]
25 50 75 100 125 150 1750
5
10
15
20
25
30
Figure 2. Diode�transient�thermal�impedance�as�afunction�of�pulse�width(D=tp/T)
tp,�PULSE�WIDTH�[s]
Zth(j -c
) ,�TR
ANSIENT�TH
ERMAL�RESISTA
NCE�[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
15.5E-33.3E-6
20.139883.1E-5
31.17913.1E-4
41.024142.4E-3
50.529490.02313464
60.892840.3541141
71.58212.438381
80.1301328.31257
Figure 3. Typical�reverse�recovery�time�as�a�function�ofdiode�current�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
trr,�R
EVERSE�RECOVERY�TIME�[ns]
0 500 1000 1500 2000 2500 3000 3500 40000
10
20
30
40
50
60
70
80Tj=25°C, IF = 8ATj=175°C, IF = 8A
Figure 4. Typical�reverse�recovery�charge�as�a�functionof�diode�current�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
Qrr,�R
EVERSE�RECOVERY�CHARGE�[µC]
0 500 1000 1500 2000 2500 3000 3500 40000.00
0.05
0.10
0.15
0.20
0.25
0.30Tj=25°C, IF = 8ATj=175°C, IF = 8A
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IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
Figure 5. Typical�peak�reverse�recovery�current�as�afunction�of�diode�current�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
Irrm,�R
EVERSE�RECOVERY�CURRENT�[A]
0 500 1000 1500 2000 2500 3000 3500 40000
5
10
15
20
25
30Tj=25°C, IF = 8ATj=175°C, IF = 8A
Figure 6. Typical�diode�peak�rate�of�fall�of�reverserecovery�current�as�a�function�of�diodecurrent�slope(VR=400V)
diF/dt,�DIODE�CURRENT�SLOPE�[A/µs]
dIrr/dt,�diode�peak�rate�of�fall�of�I
rr�[A
/µs]
0 500 1000 1500 2000 2500 3000 3500 4000-7000
-6000
-5000
-4000
-3000
-2000
-1000
0Tj=25°C, IF = 8ATj=175°C, IF = 8A
Figure 7. Typical�diode�forward�current�as�a�function�offorward�voltage
VF,�FORWARD�VOLTAGE�[V]
IF ,�FORWARD�CURRENT�[A]
0.0 0.5 1.0 1.5 2.0 2.50
2
4
6
8
10
12
14
16
18Tj=25°CTj=175°C
Figure 8. Typical�diode�forward�voltage�as�a�function�ofjunction�temperature
Tvj,�JUNCTION�TEMPERATURE�[°C]
VF ,�FO
RWARD�VOLTAGE�[V
]
0 25 50 75 100 125 150 1750.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50IF=4AIF=8AIF=16A
8
IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
9
IDV08E65D2Emitter�Controlled�Diode
Rev.�2.2,��2014-08-28
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10
IDV08E65D2
Emitter Controlled Diode
Rev. 2.2, 2014-08-28
Revision History
IDV08E65D2
Revision: 2014-08-28, Rev. 2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2013-03-13 Preliminary data sheet
2.1 2013-12-16 Final DS / New Marking Pattern
2.2 2014-08-28 Value VFmax limit according BE test
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Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2014 Infineon Technologies AGAll Rights Reserved.
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