Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) Outline: • Operation principle of MAPS • Radiation tolerance against ionising doses (update) • Radiation tolerance against non- ionising doses • Summary S. Amar, A. Besson, J. Baudot, G. Claus, C. Colledani, G. Deptuch, M.Deveaux, A. Dorokhov, W. Dulinski, A. Gay, M. Goffe, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, C. Hu, K. Jaaskelainen, C. Muentz, M. Pellicioli, N. Pillet, O. Robert, A. Shabetai, M. Szelezniak, J. Stroth, I. Valin, M. Winter (Project coordinator) Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux ([email protected])
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Radiation tolerance of Monolithic Active Pixel Sensors (MAPS) Outline: Operation principle of MAPS Radiation tolerance against ionising doses (update)
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Radiation tolerance of Monolithic Active Pixel Sensors (MAPS)
Outline:• Operation principle of MAPS• Radiation tolerance against ionising doses (update)• Radiation tolerance against non-ionising doses• Summary
S. Amar, A. Besson, J. Baudot, G. Claus, C. Colledani, G. Deptuch, M.Deveaux, A. Dorokhov, W. Dulinski, A. Gay, M. Goffe, Y. Gornushkin, D. Grandjean, F. Guilloux, S. Heini, A. Himmi, C. Hu, K.
Jaaskelainen, C. Muentz, M. Pellicioli, N. Pillet, O. Robert, A. Shabetai, M. Szelezniak, J. Stroth, I. Valin, M. Winter (Project coordinator)
Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux ([email protected])
Radiation tolerance against non-ionising doses
The measurement procedure:• Chips were irradiated and bonded consecutively• Comparisons were made between irradiated and new chips
Parameters measured were:• Leakage current of the pixels• Noise of the pixels• Charge Collection Efficiency (CCE) by means of a 55Fe-source• Detection efficiency in beam tests (~ 5 GeV e- and 120 GeV Pions)
Data was taken as function of:• The pixel pitch • The thickness of the sensitive volume• „Temperature“
Region of interest: 1011 – 1013 neq / cm²
MAPS are highly P-doped, not depleted => No problems with Neff. Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux ([email protected])
Leakage current of irradiated MAPS
Increase of leakage current after 1013 neq / cm² ?
An increase of leakage currentis observed. Reasonably lowat moderate cooling.
of the chip support
Resmdd 2006, 13. 0ct. 2006, Florence, Michael Deveaux ([email protected])
Really crucial? Will be studied with MIMOSA-18 (in Frankfurt). Expect results early next year.
SB-Pixels may adapt themselfes to slow fluctuations.But also to those ones?
Temperature Dependence of RTS
Cooling helps!
Summary and Conclusion
Non-Ionising radiation damage:
• Increases the leakage current of MAPS• Increases the (shot)-noise of MAPS• Reduces the collected charge !!! (Most crucial)• Generates Random Telegraph Signal
Cooling may:• Reduce leakage current and shot noise• Dimm amplitude of Random Telegraph Signalbut has no beneficial effect on charge collection.
Reducing the pixel pitch:• May substantially increase the charge collection(half the pixel pitch, roughly factor 5 more radiation hardness)