Features Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Fast Switching Simple Drive Requirements Hermetically Sealed Ceramic Package Light Weight Surface Mount ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Pre-Irradiation Symbol Parameter Value Units I D1 @ V GS = 12V, T C = 25°C Continuous Drain Current 56* A I D2 @ V GS = 12V, T C = 100°C Continuous Drain Current 49 I DM @ T C = 25°C Pulsed Drain Current 224 P D @ T C = 25°C Maximum Power Dissipation 250 W Linear Derating Factor 2.0 W/°C V GS Gate-to-Source Voltage ±20 V E AS Single Pulse Avalanche Energy 283 mJ I AR Avalanche Current 56 A E AR Repetitive Avalanche Energy 25 mJ dv/dt Peak Diode Recovery dv/dt 7.5 V/ns T J Operating Junction and -55 to + 150 °C T STG Storage Temperature Range Lead Temperature 300 (for 5s) Weight 3.3 (Typical) g IRHNS67164 JANSR2N7581U2A 1 2020-04-13 Part Number Radiation Level RDS(on) I D QPL Part Number IRHNS67164 100 kRads(Si) 0.01856A* JANSR2N7581U2A IRHNS63164 300 kRads(Si) 0.01856A* JANSF2N7581U2A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD) PD-97880B Description For Footnotes, refer to the page 2. Product Summary IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm 2 ). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SupIR-SMD * Current is limited by package International Rectifier HiRel Products, Inc. R 6 150V, N-CHANNEL REF: MIL-PRF-19500/760 TECHNOLOGY
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RADIATION HARDENED CHANNEL POWER MOSFET REF: MIL PRF ... · dv/dt Peak Diode Recovery dv/dt 7.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Lead
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SupIR-SMD)
PD-97880B
Description
For Footnotes, refer to the page 2.
Product Summary
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 90 (MeV/(mg/cm
2). The combination of low RDS(on) and low
gate charge reduces the power losses in switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
SupIR-SMD
* Current is limited by package
International Rectifier HiRel Products, Inc.
R 6
150V, N-CHANNEL REF: MIL-PRF-19500/760
TECHNOLOGY
2 2020-04-13
IRHNS67164 JANSR2N7581U2A
Pre-Irradiation
International Rectifier HiRel Products, Inc.
Source-Drain Diode Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
IS Continuous Source Current (Body Diode) ––– ––– 56* A
ISM Pulsed Source Current (Body Diode) ––– ––– 224
VSD Diode Forward Voltage ––– ––– 1.2 V TJ=25°C, IS = 56A, VGS=0V
trr Reverse Recovery Time ––– ––– 370 ns TJ=25°C, IF = 56A,VDD ≤ 25V
VSD Diode Forward Voltage ––– 1.2 V VGS = 0V, IS = 56A
IR HiRel radiation hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR Hirel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For Footnotes, refer to the page 2.
Radiation Characteristics
1. Part numbers IRHNS67164 (JANSR2N7581U2A) and IRHNS63164 (JANSF2N7581U2A)
Fig a. Typical Single Event Effect, Safe Operating Area
Table 2. Typical Single Event Effect Safe Operating Area