Radiation Effects on Emerging Electronic Materials and Devices Ron Schrimpf Vanderbilt University Institute for Space and Defense Electronics.

Radiation Effects on Emerging Electronic Materials and Devices

Ron Schrimpf

Vanderbilt University

Institute for Space and Defense Electronics

Team Members

• Vanderbilt University– Electrical Engineering: Dan Fleetwood, Marcus Mendenhall, Lloyd

Massengill, Robert Reed, Ron Schrimpf, Bob Weller

– Physics: Len Feldman, Sok Pantelides

• Arizona State University– Electrical Engineering: Hugh Barnaby

• University of Florida– Electrical and Computer Engineering: Mark Law, Scott Thompson

• Georgia Tech– Electrical and Computer Engineering: John Cressler

• North Carolina State University– Physics: Gerry Lucovsky

• Rutgers University– Chemistry: Eric Garfunkel, Evgeni Gusev

Institute for Space and Defense Electronics

Resource to support national requirements in radiation effects analysis and rad-hard design

Bring academic resources/expertise and real-world engineering to bear on system-driven needs

ISDE provides:• Government and industry radiation-effects resource

– Modeling and simulation– Design support: rad models, hardening by design– Technology support: assessment, characterization

• Flexible staffing driven by project needs– Faculty– Graduate students– Professional, non-tenured engineering staff

Radiation Effects on Emerging Electronic Materials and Devices

• More changes in IC technology and materials in past five years than previous forty years– SiGe, SOI, strained Si, alternative dielectrics, new

metallization systems, ultra-small devices…

• Future space and defense systems require understanding radiation effects in advanced technologies– Changes in device geometry and materials affect

energy deposition, charge collection, circuit upset, parametric degradation…

Approach

• Experimental analysis of radiation response of devices and materials fabricated in university labs and by industrial partners

• First-principles quantum mechanical analysis of radiation-induced defects physically based engineering models

• Development and application of a fundamentally new multi-scale simulation approach

• Validation of simulation through experiments

Virtual Irradiation

• Fundamentally new approach for simulating radiation effects

• Applicable to all tasks

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are needed to see this picture.

Physically Based Simulation of Radiation Events

• High energy protons incident on advanced CMOS integrated circuit

• Interaction with metallization layers dramatically increases energy deposition

Device Description Radiation Events

Hierarchical Multi-Scale Analysis of Radiation Effects

Materials

Device Structure

Device Simulation Circuit Response

IC DesignEnergy

Deposition

Defect Models

Current Joint Program of ISDE/VU and CFDRC

Geant4- accurate model of radiation event

3D device simulation

n

e-

Blue = + ions

p

“Improved Understanding of Space Radiation Effects in Exploration Electronics by Advanced Modeling of Nanoscale Devices and Novel Materials”

STTR Phase I Project, sponsored by NASA Ames (2005):

Program Objectives:

Couple Vanderbilt Geant4 and CFDRC NanoTCAD 3D Device Solver

Adaptive/dynamic 3D meshing for multiple ion tracks

Statistically meaningful runs on a massively parallel computing cluster

Integrated and automated interface of Geant4 and CFDRC NanoTCAD

0.13um NMOS, Vd = 1.2 V, Vg = 0V

Two different ion strikesPsub Contact / No-Contact

0.E+00

2.E-04

4.E-04

6.E-04

8.E-04

1.E-03

1.E-12 1.E-11 1.E-10 1.E-09 1.E-08 1.E-07 1.E-06

Time (s)

Drain Current

(A)

ion strike C ion, LET=5.06, R=0.06umHe ion, LET=1.18, R=0.02um C ion, P-sub ContactHe ion, P-sub Contact

- Adaptive 3D meshing - 3D Nanoscale transport - Physics based

transient response

Research Plan

• Tasks defined and scheduled

Organization by Task

• Radiation response of new materials– NCSU, Rutgers, Vanderbilt

• Impact of new device technologies on radiation response– ASU, Florida, Georgia Tech, Vanderbilt

• Single-event effects in new technologies and ultra-small devices– Florida, Georgia Tech, Vanderbilt

• Displacement-damage and total-dose effects in ultra-small devices– ASU, Vanderbilt

Radiation Response of New Materials

• HfO2-based dielectrics and emerging high-k materials• Metal gates• Interface engineering (thickness & composition)• Hydrogen and nitrogen at SiON interfaces (NBTI)• Substrate engineering (strained Si, Si orientations,

Si/SiGe, SOI)• Defects in nanoscale devices• Energy deposition via Radsafe/MRED

Impact of new device technologies on radiation response

• SiGe HBTs• Strained Si CMOS• Ultra-small bulk CMOS• Mobility in ultra-thin film SOI MOSFETs• TID response in scaled SOI CMOS• Multiple gate/FinFET devices• Multi-scale hierarchical analysis of single-event effects

Single-event effects in new technologies and ultra-small devices

• Development/application of integrated simulation tool suite– Applications in all tasks

• Effects of passivation/metallization on SEE• Tensor-dependent transport for SEE• Extreme event analysis• Spatial and energy distribution of e-h pairs• Energy deposition in small device volumes

Displacement-damage and total-dose effects in ultra-small devices

• Physical models of displacement single events• Microdose/displacement SEE in SiGe and CMOS devices• Single-transistor defect characterization• Link energy deposition to defects through DFT molecular

dynamics • Multiple-device displacement events• Dielectric leakage/rupture

Collaborators

• IBM– SiGe, CMOS, metal gate,

high-k

• Intel– Strained Si and Ge

channels, tri-gate, high-k, metal gate

• Texas Instruments– CMOS

• Freescale– BiCMOS and SOI

• Jazz– SiGe

• National– SiGe

• SRC/Sematech– CMOS, metal gate, high-k,

FinFETs

• Sandia Labs– Alternative dielectrics,

thermally stimulated current

• NASA/DTRA– Radiation-effects testing

• Oak Ridge National Laboratory– Atomic-scale imaging

• CFDRC– Software development