1 n D. Cressler, 6/14/07 Radiation Effects in SiGe Devices Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler School of Electrical and Computer Engineering 77 Atlantic Drive, N.W., Georgia Institute of Technology Atlanta, GA 30332-0250 USA [email protected]Tel (404) 894-5161 / http://users.ece.gatech.edu/~cressler/
Radiation Effects in SiGe Devices Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler MURI Review: Vanderbilt University, Nashville, TN June 14, 2007. School of Electrical and Computer Engineering - PowerPoint PPT Presentation
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1John D. Cressler, 6/14/07
Radiation Effects in SiGe Devices
Akil Sutton, Marco Bellini, Ryan Diestelhorst, Anuj Madan, Tom Cheng, Bongim Jun, and John D. Cressler
Other Candidate Techniques to Be Measured Next Week – Stay Tuned!
21John D. Cressler, 6/14/07
• New Latch-Level Circuit Hardening Scheme Introduced • Low Area / Power / Speed Overhead vs. Previous RHBD Designs
New RHBD Latches
Capable of > 20 Gbps Operation with RHBD!
22John D. Cressler, 6/14/07
• Some Updates from the SiGe World
• New Avenues for RHBD in Bulk SiGe HBTs
• Probing the TID Damage Physics of SiGe HBTs
• Radiation Effects in Complementary SiGe HBTs
• Radiation Effects in SiGe MODFETs
• Progress / Plans
Outline
23John D. Cressler, 6/14/07
Mixed-Mode Stress
• Simultaneous High Current + High Voltage Stress (JE + VCB)- very complex damage response: 3 different mechanisms (at least)
- damages both EB spacer and STI edge (just like radiation) - complex dependence on VCB, JE, area, temperature, etc.
Q: Can Mixed-Mode Stress Shed Light on Radiation Damage?
24John D. Cressler, 6/14/07
Mixed-Mode Annealing
• Certain Stress Conditions Can Remove Radiation Damage - induced forward + inverse mode base leakage current is removed - high voltage + high current self-heating plays a role - effect observed in multiple SiGe technology platforms / nodes
• IHP’s Complementary SiGe HBT Technology- low RC and CCS collector construction (no STI between E and C)
- highly-tuned vertical doping profile
- reduced phosphorus diffusion in the C-doped base
[1] B. Heinemann, et al, IEDM, pp. 117-120, 2003
npn SiGe HBT
pnp SiGe HBT
33John D. Cressler, 6/14/07
IHP C-SiGe Technology
• Record Performance for a C-SiGe HBT Process
- 170 GHz npn SiGe HBT + 90 GHz pnp SiGe HBT!
34John D. Cressler, 6/14/07
TID Effects in C-SiGe
• pnp SiGe HBTs Appear More Radiation Tolerant Than npn’s
Q: Are the Damage Mechanisms Fundamentally Different?
35John D. Cressler, 6/14/07
• Some Updates from the SiGe World
• New Avenues for RHBD in Bulk SiGe HBTs
• Probing the TID Damage Physics of SiGe HBTs
• Radiation Effects in Complementary SiGe HBTs
• Radiation Effects in SiGe MODFETs
• Progress / Plans
Outline
36John D. Cressler, 6/14/07
SiGe n-MODFETs
Collaboration with S. Koester at IBM
37John D. Cressler, 6/14/07
• Impact of Radiation-Induced Damage on RF Characteristics– 10 keV X-ray irradiation degrades fmax but not fT
– degradation dependent on LSD rather than LG (S/D Resistance)
SiGe n-MODFETs
We Now Have SiGe p-MODFETs in Hand – Stay Tuned!
38John D. Cressler, 6/14/07
• Many Issues in SiGe Still Need Attention - improved understanding of basic damage mechanisms (TID + SEE)- understand the effects of temperature on damage mechanisms / SEE- need to assess SET in analog/mixed-signal SiGe circuits- explore other SiGe HBT variants (SiGe HBT on SOI, C-SiGe, etc.) - explore other (new) SiGe-based devices (SiGe MODFETs, photonics, etc.) - develop new RHBD approaches (device + circuit) for SEE mitigation- need improved 3D TCAD for understanding SEE (and TID)
Progress / Plans
• Lots of Leverage for SiGe Hardware / Testing Activity - many SiGe tapeouts (IBM, IHP, TI, Jazz, ST): devices + circuits- DTRA / NASA-NEPP (Paul Marshall)- NASA SiGe ETDP Project (RHESE)- CFDRC SBIR (DTRA) for Improved TCAD for SEU / Cryo-T, etc.- excellent collaboration between Georgia Tech and Vanderbilt teams
• SiGe Offers Great Potential for Many DoD Applications- SiGe HBT + Si CMOS (RF to mm-wave + analog + digital for SoC / SoP)
39John D. Cressler, 6/14/07
Publications
[1] A. Madan, B. Jun, R.M. Diestelhorst, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, T. Isaacs-Smith, J.R. Williams, and S.J. Koester, “Radiation Tolerance of Si/SiGe n-MODFETs,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-8, 2007.
[2] M. Bellini, B. Jun, A.C. Appaswamy, P. Cheng, J.D. Cressler, P.W. Marshall, B. El-Kareh, S. Balster, and H. Yasuda, “The Effects of Proton Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-7, 2007.
[3] R.M. Diestelhorst, S. Finn, B. Jun, A.K. Sutton, P. Cheng, P.W. Marshall, J.D. Cressler, R.D. Schrimpf, D.M. Fleetwood, H. Gustat, B. Heinemann, G.G. Fischer, D. Knoll, and B. Tillack, “The Effects of X-Ray and Proton Irradiation on a 200 GHz / 90 GHz Complementary (npn + pnp) SiGe:C HBT Technology,” IEEE Nuclear and Space Radiation Effects Conference, paper F-5, 2007.
[4] L. Najafizadeh, B. Jun, J.D. Cressler, A.P.G. Prakash, P.W. Marshall, and C.J. Marshall, “A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References,” IEEE Nuclear and Space Radiation Effects Conference, paper PF-6, 2007.
[5] J.A. Pellish, R.A. Reed, R.A. Weller, M.H. Mendenhall, P.W. Marshall, A.K. Sutton, R. Krithivasan, J.D. Cressler, S.M. Currie, R.D. Schrimpf, K.M. Warren, B.D. Sierawski, and G. Niu, “On-Orbit Event Rate Calculations for SiGe HBT Shift Registers,” IEEE Nuclear and Space Radiation Effects Conference, paper H-3, 2007.
[6] A.K. Sutton, J.P. Comeau, R. Krithivasan, J.D. Cressler, J.A. Pellish, R.A. Reed, P.W. Marshall, M. Varadharajaperumal, G. Niu, and G. Vizkelethy, “An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs,” IEEE Nuclear and Space Radiation Effects Conference, paper C-6, 2007.
[7] P. Cheng, B. Jun, A.K. Sutton, C. Zhu, A. Appaswamy, J.D. Cressler, R.D. Schrimpf, and D.M. Fleetwood, “Probing Radiation- and Hot Electron-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress,” IEEE Nuclear and Space Radiation Effects Conference, paper PA-4, 2007.
[8] T.S. Mukherjee, K.T. Kornegay, A.K. Sutton, R. Krithivasan, J.D. Cressler, G. Niu, and P.W. Marshall, “A Novel Circuit-Level SEU-Hardening Technique For Low-Voltage, Ultra-High-Speed SiGe HBT Logic Circuits,” IEEE Nuclear and Space Radiation Effects Conference, paper PC-6, 2007.
[9] M. Varadharajaperumal, G. Niu, X. Wei, J.D. Cressler, R.A. Reed, and P.W. Marshall, “3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector,” IEEE Nuclear and Space Radiation Effects Conference, paper H-4, 2007.