R-SOA-EAM-1550 —Semiconductor Optical Amplifier · PDF fileThe R-SOA-EAM-1550 is a reflective optical device that provides optical gain and high-speed optical

www.ciphotonics.com ……..photonic solutions CIP Ltd, Adastral Park, Martlesham Heath, Ipswich, IP5 3RE, UK Tel: +44 (0) 1473 663210 [email protected] rev A

PRELIMINARY INFORMATION | R-SOA-EAM-1550

Description The R-SOA-EAM-1550 is a reflective optical device that provides optical gain and high-speed optical modulation in a single monolithically integrated InP chip. The device uses an advanced MQW semicon-ductor structure to achieve high performance and low power requirements. Typical SOA bias currents are =100mA and the EAM is operated at a reverse bias up to –3V with ~3Vpp RF drive voltage. It has a fibre with an Angled Polished Connector (APC).

R-SOA-EAM-1550 —Semiconductor Optical Amplifier (SOA) and Reflective Electroabsorption Modulator (REAM) at 1.55µm

Features • 1.55µm C-band operation • High performance SOA

• Low polarisation sensitivity (~0.5dB) • >15dB optical gain on chip • Optical mode converter for low loss • Low coupling loss to optical fibre (<1dB) • Low reflectivity facet (R <10-5) • Low drive current for SOA (<100mA)

• High performance REAM • 18GHz EO bandwidth • 9dB dynamic ER • Low chirp • 10Gb/s long reach, 80km transmission over SMF • 20Gb/s modulation capabilities

Application Examples • Colourless transmitters • WDM-PON, 10G EPON • Metro networks • Long reach high speed Access • High-speed optical interconnects • Optical sensors/transmitters

Optical and electrical characteristics All specifications are at case temperature = 20°C and 1550nm unless stated otherwise. Pin= Input optical power, VDC = EAM Bias voltage, VPP = EAM RF drive, ISOA= SOA current

Parameter Test condition Typ. Unit

Modulation depth PIN = 0dBm, ISOA=50mA, VDC in [0;-3]V 11 dB

Polarisation dependent loss PIN = 0dBm, ISOA=50mA, VDC=0V 0.5 dB

Small signal 3dBe RF bandwidth PIN = 0dBm, ISOA=50mA, VDC~-1.5V 18 GHz

Small input power device gain PIN =-15dBm, VDC=60mA, VDC ~ -2.7V, VPP = 2.9V 15 dB

Average modulated Output Power at 10Gb/s PIN = 0dBm, ISOA=60mA, VDC~-2V, VPP =3V 5 dBm

Dynamic extinction ratio under NRZ modulation at 10Gb/s

PIN =0dBm, ISOA=60mA, VDC~-2V, VPP =3V 9 dB

Dispersion penalty over 80 km smf-28 optical fibre (1320ps/nm) under NRZ modulation at 10Gb/s PIN =-10dBm, ISOA=100mA, VDC~-2V, VPP =3V 0.5 dB

www.ciphotonics.com ……..photonic solutions CIP Ltd, Adastral Park, Martlesham Heath, Ipswich, IP5 3RE, UK Tel: +44 (0) 1473 663210 [email protected] rev A

PRELIMINARY INFORMATION | R-SOA-EAM-1550

Item Rating Unit Maximum EAM DC Reverse Bias 3 V

Maximum EAM DC Forward Bias 0.6 V

Maximum RF Voltage (peak to peak) 4 V

Maximum Input Optical Power +5 dBm

Case operating Temperature 0 - 70 °C

Storage temperature 0 - 85 °C

Fibre type SMF-28 900µm tight buffer, >1m - PM fibre option avail-able on request

Maximum DC SOA Current Bias 125 mA

Maximum DC SOA Voltage Forward bias 3 V

Maximum DC SOA Voltage Reverse bias 2 V

Maximum TEC voltage 3.6 V

Maximum TEC current 2 A

Absolute maximum ratings

Parts of this product are manufactured under one or more of the following patents licensed from British Telecommunications PLC : European 143000;384764;416879;531377;890129;156566;227783;218344;279680;261943;390614;174729;228435;228435;242084;245085;746887;767923;830721;1181591; 93527.3; 1183561;170457;225015;247834;292328;320305;537237;624257;647327;94905188.2;691044;772924;782713;822425;822426;813761;97900375.3;97908417.5; 97908417.5;865124 US 4826295;5426312;5481397;5202897;6008926;4734387;4728628;4935936;4754459;4964134;5242857;53329542;4736164;4817207;4981814;5015964; 844929;5852696; 6188511;6625371;6571037;959329/09;4744619;4793690;4879761;4969704;4973122;4995100;5216237;5371820;5656507;6075625;6229945;6097512;5719974; 5832011;5917636; 5841928;5978400; 6104852;6052213;5974073;6178280: Canada 297211;1284683;2182591;2193095;2221693;2372581;2372401;2373546;1255485;1244519; 1281802; 1296887; 1293996;2085596;2117682; 2280472;2153798;2155528;2185132;2199513;2367133;2212736;2240519;2248042;1268848;2047196;2065247;2082939;2243279; 1236554;1228936;1261483;265604;1295722;1332341; 2049356: Japan 2837265;2968335;1000942;2134710;2547001;2935415;2140794;2708165;2984365;2018663;1868104; 2670519;2128400; 2764141;1957418;2664457;2081567;3117708; 3404040;3556665;3346570;95-525482;97-525789;97-534136

Wiring Diagram and Dimensions

CIP reserves the right to make changes in the design, specifications and other information at any time, and without prior notice. The information contained within the Data Sheet is believed to be accurate. However, no responsibility is assumed for possible inaccuracy or omission. Any information contained herein shall legally bind CIP only if it is specifically incorporated in the terms

Ordering Information— Part Number R-SOA-EAM-1550 For Custom products please contact CIP Technologies Sales on +44 1473 663210 or e-mail [email protected]. For details of your local agent, visit www.ciphotonics.com

CIP Technologies is the trading name of The Centre for Integrated Photonics Ltd Registered Office - Phoenix House, Adastral Park, Martlesham Heath, Ipswich, Suffolk IP5 3RE Registered in England No: 4905488 VAT Reg No: 824 6260 36 GB

Pin Connection 1 Peltier (+ve) 2 Peltier (-ve) 3 SOA +ve 4 EAM DC bias 5 Ground 6 Thermistor 10kΩ 7 Thermistor 10kΩ SMA Centre pin anode, package case cathode

www.ciphotonics.com ……..photonic solutions CIP Ltd, Adastral Park, Martlesham Heath, Ipswich, IP5 3RE, UK Tel: +44 (0) 1473 663210 [email protected] rev A

PRELIMINARY INFORMATION | R-SOA-EAM-1550

0.5

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1

1530 1535 1540 1545 1550 1555 1560 1565

wavelength (nm)

Pen

atly

ove

r 80

km (

dB)

Penalty over 80km, DC fixed,Pin=0dBm, SOA at 75mA

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-10

-8

-6

-4

-2

0

2

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6

8

10

10 20 30 40 50 60 70 80 90 100

SOA bias current (mA)

10G

b/s

Ou

tpu

t p

ow

er (

dB

m) 1560nm

1550nm

1540nm

1530nm

CIP reserves the right to make changes in the design, specifications and other information at any time, and without prior notice. The information contained within the Data Sheet is believed to be accurate. However, no responsibility is assumed for possible inaccuracy or omission. Any information contained herein shall legally bind CIP only if it is specifically incorporated in the terms and conditions of a sales agreement.

-6

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-9

-10-11-12

-35.0 -34.0 -33.0 -32.0 -31.0 -30.0 -29.0

Received Power (dBm)

Lo

g(B

ER

)

10Gb/s performance (231-1 PRBS)

Back to back: -10dBm input, SOA Bias=100mA, EAM DC=-1.5V, RF=3Vp2p , 4dBm output power (10Gb/s)

10G

b/s

mod

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t po

wer

(0d

Bm in

put

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er)

BER over 80km SMF-28 (10Gb/s)

Back to back: -10dBm input, SOA Bias=75mA, EAM DC=-1.5V, RF=3Vp2p, 1dBm output (20Gb/s)

20Gb/s performance (27-1 PRBS)

Penalty over 80km SMF-28 versus wavelength