Quantum Electronic Structure of Atomically Uniform Pb Films on Si(111) Tai C. Chiang, U of Illinois at Urbana-Champaign, DMR-0203003 Miniaturization of.

Quantum Electronic Structure of Atomically Uniform Pb Films on Si(111)

Tai C. Chiang, U of Illinois at Urbana-Champaign, DMR-0203003

Miniaturization of materials to the nanoscale brings up two issues: one is the emergence of quantum mechanical effects associated with confinement and interference; the other is an increased sensitivity of properties to atomic-scale variations in size. Thin films are widely employed in device designs. A change in film thickness by just one atomic layer can result in interesting and important property variations, as demonstrated by this work on atomically uniform films of Pb films on Si(111). Even-odd-atomic-layer quantum oscillations in electronic structure and properties (e.g. thermal stability) are observed.

Phys. Rev. Lett. (in press), Appl. Phys. Lett. (in press), Phys. Rev. Lett. (submitted).

Photoemission intensity as a function of Pb film thickness and binding energy. Three major quantum well peaks are seen at thicknesses N = 5, 7, and 9 monolayers (ML). But such peaks are absent for films consisting of even numbers of monolayers. The results prove that the films are atomically uniform.

0.00.51.0

5

6

7

8

9

Binding Energy (eV)

Th

ickn

ess

N (

ML

)

Atomically uniform lead (Pb) films are successfully prepared on a silicon (Si) substrate. This is highly unusual and surprising, as growth of films involves random deposition of atoms, and atomic steps and defects are generally unavoidable, which leads to a film roughness that gets worse as more atoms are deposited. The successful creation of atomically smooth films in this case can be attributed to a clever growth process that involves low temperature deposition followed by thermal annealing to bypass the usual defect forming stages. Angle-resolved photoemission measurements of these highly prefect films using synchrotron radiation at the Synchrotron Radiation Center, a NSF funded national user facility, reveals electronic states corresponding to electrons trapped in the lead films. Such states are known as quantum well states. (The film acts as a potential well for trapping. Since the well width is small, quantum effects are dominant. The potential well is thus called a quantum well.) It is interesting that in the present case quantum well states are seen only for odd film thicknesses N = 5, 7, and 9 atomic layers, but not for the intervening even film thicknesses, N = 6 and 8, as shown in the figure. A separate measurement of the thermal stability shows that the even film thicknesses are much more stable at high temperatures. These results are a consequence of the detailed electronic structure of the silicon substrate and the lead film, and are in good accord with theoretical calculations. Silicon is the most important electronic substrate widely employed in commercial electronics and computer chips. Such electronic devices are getting progressively smaller, and will soon be working in the quantum regime and require the highest level of structural perfection. The present results are of importance to a fundamental understanding of the workings of electronics in this regime and how the film thickness might affect the thermal stability – a subject matter of great importance for the survivability of devices under harsh environments.

Education:This program supports graduate student Mary Upton, postdoctoral associate Shu-Jung Tang, and research faculty member Tom Miller. Much of the work is performed at the Synchrotron Radiation Center, which is supported by the National Science Foundation (DMR-0084402). Tom Miller serves on the Users Advisory Committee.

Societal Impact:The ability to create and characterize atomically uniform metal films on Si, the most important and widely used electronic substrate material, is important for the development of future generations of nanoscale devices operating on quantum principles. It may help the development of quantum computers and new standards for precision measurements.

Quantum Electronic Structure of Atomically Uniform Pb Films on Si(111)

Tai C. Chiang, U of Illinois at Urbana-Champaign, DMR-0203003

0 10 200 10 20

0

1

2

3

k|| (Å-1)

-0.2 0.0 0.2 0.4 0.6 0.8 1.0

Bin

ding

Ene

rgy

(eV

)

-2

-1

0

1

2

3

ModelExpt

(deg)

(a) (b)

(c)

Measured sub-band dispersions for a 5 ML Pb film on Si(111) compared to a model calculation assuming a constant phase shift.

The best way to describe the electronic structure of a solid is the band structure, as shown in the figure for the results from a film of a thickness of N = 5 atomic layers, as measured by angle-resolved photoemission. The curves, known as band dispersion relations, tell us how electrons move in the film, which is the basic information needed for understanding the performance of such systems as electronic devices. While lead films are not yet incorporated in commercial devices, this study of lead on silicon as a model system is of great value for understanding the fundamentals and key issues related to electronics at the nanoscale operating in the quantum regime.