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PZT Thin-film Processing Technology for Piezo-MEMS Manufacturingg
Koukou SuuULVAC, Inc.
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Page 2
Outline
1. Megatrend - “Smart Society”1. Megatrend Smart Society
➢“Smart Phone” as a Key Enabler of “Smart Society” y y
2. Enabling Technologies for “Smart Phone”
➢ Piezo-MEMS to Enable Advanced Functionality
3. ULVAC’s Manufacturing Solution for Piezo-MEMS Devices
4. Summary
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Megatrend – “Smart Society”by “Smart Information & Smart Communication”
Cloud Computing
(Smart Communication)
Home Network
(Smart Home)( ) ( )Cloud PowerInformation
Home NetworkInternet
New ICT (Information and Communication Technologies) such asInternet
Ubiquitous (Mobile) Devices
New ICT (Information and Communication Technologies) such as “Cloud computing” and “Ubiquitous network” are realizing “whenever, wherever, high-speed, high-volume, safe and secured,
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low-power-consumption, wireless” SMART SOCIETY.
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Megatrend – “Smart Society” by “Smart Energy”I f ti d C i ti T h l (ICT)
Smart CityInformation and Communication Technology (ICT)
Smart Grid
EV Charger
Smart BuildingPower Plants
EnergySolar Cell
Smart
Energy Storage
EVSmart Home
SmartMeterPV
“Energy-saving, resource-saving, disaster-resistant, renewable, safe and clean” New Energy Technologies integrated with New ICTare realizing “SMART ENERGY” thus “SMART SOCIETY”
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are realizing SMART ENERGY thus SMART SOCIETY .
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Key Enabling Technologies for Smart PhoneGyro/Acceleration sensor Tunable device
Micro mirror(Pananonic Inc )(Pananonic,Inc.)
Auto Focus lens
MEMS microphoneFront Display etc.(Jian Cai ,etc. Tsinghua Uni.)
(poLight,Inc.)f
New material(Ferroelectrics), Thin films
Yole Development 2011 with modification
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Piezo-MEMS and PZT Films
Piezoelectric effectInversed
Piezo-MEMS applications basing on Piezoelectricity
Pb(Zr,Ti)O3 (PZT) Piezoelectric effectForce => Electric charge
Force
Piezoelectric effectVoltage => Displacement
Displacement01)
( , ) 3 ( )
+
Displacement
-axi
s (0
0
Force-
Displacementa-axis (100)
c-
a axis (100)
:Pb2+ :O2- :Zr4+/Ti4+
Sensor / Energy Harvestor ActuatorPZT is the best material to realize high-performance Piezo-MEMS
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PZT is the best material to realize high-performance Piezo-MEMS
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Key Technologies and Technical Challenges forPiezo-MEMS Manufacturing g
ResistResistPatterningPatterning
ElectrodeElectrodeSputteringSputtering
Advanced PZT Advanced PZT SputteringSputtering
PZTPZTEtchingEtching
ElectrodeElectrodeSputteringSputtering
Pt/Ti
PatterningPatterningPt
PZT PZT
SputteringSputtering SputteringSputtering EtchingEtching
PZTPZT
SputteringSputtering
SiO2/Si Sub.
SiO2/Si Sub.
SiO2/Si Sub.
SiO2/Si Sub.
SiO2/Si Sub.
◆Key TechnologiesPZT S tt i Pl Et hiPZT Sputtering, Plasma Etching
◆Technical Challenges1. How to Realize Reliable PZT Sputtering?2. How to Obtain High-performance PZT Film?3 H t F b i t PZT Pi MEMS D i ?
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3. How to Fabricate PZT Piezo-MEMS Device?
Page 8
PZT-film-based Piezo-MEMS
Gyro /Accelerometer
MEMS Lens
Device Smart Phone
Material Pb(Zr,Ti)O3
Requirements1.High Reliable Manufacturability
2.High Piezo-performance
Solutions
1. Reliable PZT Sputtering Module 2. High Oriented PZT film Sputtering Process
Solutions3. Reliable PZT Capacitor Etching Module
4. High Selectivity and Uniformity Etching Process
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1. How to Realize Reliable PZT Sputtering ULVAC Original Reliable PZT Sputtering Module
(b) Novel Sputtering Module(a) Conventional Sputtering Module
SSDM2012
SolutionsIssues*Patent: US6521105, EU, JP, KR, CH, TW
High density targetNew cathode design C t l f hi ld t ti l
Target crack (Low density, Arc)Arc on shield (For charge up on shield)B d t bilit (F h hi ld) Control of shield potential
Novel anode adoption (Good reliability) New wafer stage (Good uniformity)
Bad stability (For charge up on shield)Composition gap of volatile materialBad Uniformity (WIW, WTW)
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g ( y)De-facto Standard Manufacturing Tool for Non-volatile memory and MEMS devices.
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1. How to Realize Reliable PZT Sputtering Repeatability Comparison
1.5 1.5
u.)
(b) Novel Sputtering Module(a) Conventional Sputtering Module
1.0
tent
(a.u
.)
1.0
nten
t (a.
u
0.5Pbco
nt
RF power: 2.0 kWAr pressure: 1 0 Pa
0.5Pb c
o
RF power: 2.0 kWAr pressure: 1 0 Pa
00 2 4 6 8 10
Sputtering time (hour)
Ar pressure: 1.0 PaDeposition time: 6 min
00 2 4 6 8 10
Sputtering time (hour)
00 2 4 6 8 10
Sputtering time (hour)
Ar pressure: 1.0 PaDeposition time: 6 min
Solution;
Sputtering time (hour)Sputtering time (hour) Sputtering time (hour)
Solution;Shield; Potential control & Novel AnodeStage; Potential control & High efficient cooling stage
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g ; & g g g
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1. How to Realize Reliable PZT Sputtering Repeatability of PZT Sputtering Process @8inch
12 06 0 4 01 6Deposition rate Pb composition
8 0
10.0
12.0
4 0
5.0
6.0
±%)
(µm
/h)
3.0
4.0
1.2
1.4
1.6
(±%
)
ent (
a.u)
◆PZT thickness:2 µm◆Target Life Total:400 wafers
◆PZT thickness:2 µm◆Target Life Total:400 wafers
4 0
6.0
8.0
2 0
3.0
4.0
mity
; WIW
(±
osito
n R
ate
2.0
0.6
0.8
1.0
rmity
; WIW
(
zed
Pb
cont
e
WTW: ±1.4% WTW: ±0.6%
0.0
2.0
4.0
0.0
1.0
2.0
Uni
form
Dep
o
0.0
1.0
0.0
0.2
0.4
Uni
for
Stan
dard
iz
<±3%
<±0.6%
0 100 200 300 400Number of 2µm-PZT wafers (pcs)
0 100 200 300 400Number of 2µm-PZT wafers (pcs)
◆PZT Target Life : 400pcs ◆PZT Target Life : 400pcs◆PZT Target Life : 400pcs◆Deposition Rate (WTW) : ±1.4%◆Deposition Rate (WIW) : <±3.0%
◆PZT Target Life : 400pcs◆Pb content (WTW) : ±0.6%◆Pb content (WIW) : <±0.6%
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2. How to Obtain High-performance PZT FilmPZT Film Crystalline Orientation Control
111)
0) PZT(001)/(100) 12.0
Measurement Freq.; 250 HzCantilever length ; 25.5 mm
※Young’s Module of PZT film:70GPa
a.u)
Pt(1
111)
T(00
1)/(1
0
002)
/(200
)( ) ( )preferably oriented
8.0 nt (μ
m)
e31= -12.9 C/m2
(d31=-184 pm/V)
※Young s Module of PZT film:70GPa
tens
ity (a
PZT(
1
PZT
PZT(
0
4 0
8 0
acem
en
Int
PZT(111) preferably oriented 0 0
4.0
Dis
pl
e31= - 7.8C/m2
(d31=-111 pm/V)
20 25 30 35 40 45 50
preferably oriented 0.0 0 10 20 30 40
Applied Vpp (V)
Piezoelectric coefficient e31,f of PZT(001)/(100) preferably orientedis twice larger than that of PZT(111) preferably oriented
2theta (deg.)pp
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is twice larger than that of PZT(111) preferably oriented.
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2. How to Obtain High-performance PZT FilmToward Higher PZT Performance
250V) (C
/m2 )25
PZT@2 µm200
tage
(V
nt |e
31| (20
17 2 17 3
99100
150
wn
Volt
coef
ficie
10
15
14.7
17.2 17.3
12 9
30 3161
50
100
eakd
ow
lect
ric c10
5
12.9
30 31
0
50
Bre
Piez
oel
0
5
We also can provide advanced process:
0 process.#2
process.#3
process.#4
process.#1
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higher piezoelectric constant and higher breakdown voltage.
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2. How to Obtain High-performance PZT Film Electric Fatigue of 2.0 µm-PZT film
1 6
1.8
2.0
x (a
.u)
Conventional Process
1.2
1.4
1.6 tio
n;Pm
ax
Advanced Process
0.8
1.0
Pola
rizat
0.2
0.4
0.6
orm
aliz
ed
0.0
0.2
1E+0 1E+1 1E+2 1E+3 1E+4 1E+5 1E+6 1E+7 1E+8 1E+9 1E+101E+11
No
CyclesProcess Condition Cycles
Conventional 0 to +30 V @100kHz 2E+7Advanced 0 to +30 V @100kHz Up to 4E+10
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Advanced 0 to +30 V @100kHz Up to 4E+10
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3. How to Fabricate PZT Piezo-MEMS DevicePiezo-MEMS Etching Module
ISM(inductively Super Magnetron)
STAR ELECTRODERF Antenna
Permanent magnet
High Density Plasma L P O ti Low Pressure Operation High Etching Uniformity
ESC StageWafer
The most important feature of Etching module is the so called “ STAR ELECTRODE” which is necessary to realize process
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y prepeatability.
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3. How to Fabricate PZT Piezo-MEMS DeviceEtching Repeatability
1.4 1.5
e 200nm-Ir film Etching
Rat
e
1.11.2 1.3
tch
Rat
e
RF導入窓デポ抑制機構あり
g
with “STAR Electrode”chin
g R
0 80.9 1.0 1.1
mal
ized
E RF導入窓デポ抑制機構あり
zed
Etc
0.6 0.7 0.8
Nor
m
RF導入窓デポ抑制機構なしwithout “STAR Electrode”
Nor
mal
iz
0.5 0 5 10 15 20 25
ウエハ枚数[wafers]
抑
Wafers
N
ウエハ枚数[wafers]Wafers
The advantage of our tool with “STAR Electrode” is f
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repeatability of stable Ir metal etching.
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3. How to Fabricate PZT Piezo-MEMS DeviceSmart Process
204060
μC/c
m2 )
51015
t (nm
)PD
φ50 µm
40-20
020
rizat
ion
(μ
10-505
plac
emen
t
-60-40
-150 -100 -50 0 50 100 150Applied field (kV/cm)
Pola
r
-15-10
Dis
p
Selectivity vs. BE pp ( )
Film SelectivityPZT(sputter) to PR 0.45
y
PZT(sputter) to Pt 50
Material Etch Rate(nm/min)
UniformityE.E.10mm(%)
Wafer Size(inch)( ) ( ) ( )
Pt 160 ≦±5 8PZT 170 ≦±5 8
U if it d Hi h l ti it hi d b S t P
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Uniformity and High-selectivity are achieved by Smart Process.
Page 18
ULVAC’s Manufacturing Solution forPiezo-MEMS Devices
ResistResistpatterningpatterning
Pt
ElectrodeElectrodeSputteringSputtering
Advanced PZT Advanced PZT SputteringSputtering
PZTPZTetchingetching
ElectrodeElectrodeSputteringSputtering
Pt/Ti
Pt
PZT PZT PZTPZT
SiO2/Si Sub.
SiO2/Si Sub.
SiO2/Si Sub.
SiO2/Si Sub.
SiO2/Si Sub.
SMESME--200 series200 series NENE--SeriesSeries
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Page 19
Summary
ULVAC has Established Mass Production Capability
as well as Advanced Process Capability on bothas well as Advanced Process Capability on both
PZT Thin-film Sputtering and Etching Technologies.
We therefore can Provide Manufacturing Solution
for Piezo MEMS Devices which is becoming a mostfor Piezo-MEMS Devices, which is becoming a most
Important Key Enabler of Our Modern “Smart Society.”
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