4-475 Product Description Ordering Information Typical Applications Features Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Optimum Technology Matching® Applied Si BJT GaAs MESFET GaAs HBT Si Bi-CMOS SiGe HBT Si CMOS InGaP/HBT GaN HEMT SiGe Bi-CMOS 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 EGSM900 IN PCS1900 IN DCS1800 IN NC GAIN SELECT PCS1900 GND L2 DCS1800 GND DCS1900 OUT 1819 VCC PCS1800 OUT EGSM900 OUT BIAS VCC GSM900 GND 900 VCC L1 Bias and Logic RF2417 TRI-BAND LOW NOISE AMPLIFIER • Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets The RF2417 is a highly-integrated, low-power and low- cost tri-band LNA for EGSM-based multi-band handset applications. All input and output ports include on-chip matching, thus minimizing external components. The device supports the worldwide EGSM and DCS bands and the North American PCS band. A 20dB gain reduc- tion mode is provided. Three mode-control pins control gain and band selection. Unused functions are powered down for the lowest power consumption. The RF2417 is packaged in a 3mmx3mm, 16-pin leadless chip carrier, and is manufactured in the Silicon Germanium (SiGe HBT) process technology. • On-Chip Matching • Gain Reduction Mode • 2.7V Supply Voltage • Low Noise Figure • Supports Tri-Band Applications RF2417 Tri-Band Low Noise Amplifier RF2417 PCBA Fully Assembled Evaluation Board 0 Rev A5 040908 0.70 0.65 0.05 C 0.90 0.85 -C- SEATING PLANE 12° MAX 0.05 0.00 0.50 0.30 0.50 0.60 0.24 TYP PIN 1 ID R.20 1.45 1.15 SQ. 0.10 C AB M 0.30 0.18 2 -B- 3.00 3.00 -A- 0.10 C A 2 PLCS 0.10 C B 2 PLCS 0.10 C A 2 PLCS 0.10 C B 2 PLCS 1.37 TYP 1.50 TYP 2.75 SQ NOTES: 1. Shaded pin is lead 1. Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional. 2 Package Style: QFN, 16-Pin, 3x3 Preliminary
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4-475
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.7628 Thorndike RoadGreensboro, NC 27409, USA
Tel (336) 664 1233Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® AppliedSi BJT GaAs MESFETGaAs HBT
Si Bi-CMOS SiGe HBT Si CMOS
InGaP/HBT GaN HEMT SiGe Bi-CMOS
16 15 14 13
12
11
10
9
1
2
3
4
5 6 7 8
EGSM900 IN
PCS1900 IN
DCS1800 IN
NC
GA
IN S
ELE
CT
PC
S19
00 G
ND L2
DC
S18
00 G
ND
DCS1900 OUT
1819 VCC
PCS1800 OUT
EGSM900 OUT
BIA
S V
CC
GS
M90
0 G
ND
900
VC
C
L1
Bias andLogic
RF2417TRI-BAND LOW NOISE AMPLIFIER
• Tri-Band EGSM/DCS/PCS Handsets • Dual-Band EGSM/DCS Handsets
The RF2417 is a highly-integrated, low-power and low-cost tri-band LNA for EGSM-based multi-band handsetapplications. All input and output ports include on-chipmatching, thus minimizing external components. Thedevice supports the worldwide EGSM and DCS bandsand the North American PCS band. A 20dB gain reduc-tion mode is provided. Three mode-control pins controlgain and band selection. Unused functions are powereddown for the lowest power consumption. The RF2417 ispackaged in a 3mmx3mm, 16-pin leadless chip carrier,and is manufactured in the Silicon Germanium (SiGeHBT) process technology.
• On-Chip Matching
• Gain Reduction Mode
• 2.7V Supply Voltage
• Low Noise Figure
• Supports Tri-Band Applications
RF2417 Tri-Band Low Noise AmplifierRF2417 PCBA Fully Assembled Evaluation Board
0
Rev A5 040908
0.700.65
0.05 C
0.900.85
-C- SEATING PLANE
12°MAX
0.050.00
0.500.30
0.50
0.600.24TYP
PIN 1 IDR.20
1.451.15
SQ.
0.10 C A BM
0.300.18
2
-B-
3.00
3.00-A-
0.10 C A2 PLCS
0.10 C B2 PLCS
0.10 C A
2 PLCS
0.10 C B
2 PLCS 1.37 TYP
1.50 TYP
2.75 SQ
NOTES:1. Shaded pin is lead 1. Pin 1 identifier must exist on top surface of package by identification mark or feature on the package body. Exact shape and size is optional.
2
Package Style: QFN, 16-Pin, 3x3
Preliminary
Preliminary
4-476
RF2417
Rev A5 040908
Absolute Maximum RatingsParameter Rating Unit
Supply Voltage -0.5 to +5.0 VDC
Input RF Power +6 dBmOperating Ambient Temperature -40 to +85 °CStorage Temperature -40 to +150 °C
ParameterSpecification
Unit ConditionMin. Typ. Max.
EGSM900MHz ModeLNA Parameters TAMBIENT=25°C, VCC=2.7V to 2.86V
Frequency Range (fIN) 925 960 MHz L1=0; L2=1
Input Impedance (ZI) 50 Ω High Gain; GS=1
50 Ω Low Gain; GS=0Output Impedance (ZO) 50 Ω High Gain; GS=1
50 Ω Low Gain; GS=0Noise Figure (NF) 1.6 1.7 dB High Gain; GS=1
6 dB Low Gain; GS=0Gain (GTYP) 17 18 19 dB High Gain; GS=1
Gain Variation Over Temperature Range (GTEMP)
0.5 dB -40°C to +85°C
Gain Variation Over Frequency Band (GFREQ)
±0.75 dB
Low Gain (GLOW) -6 -3 dB Low Gain; GS=0
Input IP3 -5 dBm High Gain; GS=115 dBm Low Gain; GS=0
Input 1dB Compression Point (ICP1dB)
-22 -20 dBm High Gain; GS=1
-15 dBm Low Gain; GS=0Isolation 22 dB RFOUT to RFIN
Turn-On Settling Time 10 uSRise and Fall Time (trtf) 10 uS
Power Supply ParametersSupply Voltage (VCC) 2.7 3.3 V
Current Consumption (ICC) 5.0 6.0 mA High Gain@25°C; GS=1
0.5 mA Low Gain@25°C; GS=0Standby Current (ICC) 10 uA L1=0; L2=0
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Preliminary
4-477
RF2417
Rev A5 040908
ParameterSpecification
Unit ConditionMin. Typ. Max.
DCS1800MHz ModeLNA Parameters TAMBIENT=25°C, VCC=2.7V to 2.86V
Frequency Range (fIN) 1805 1880 MHz L1=1; L2=0
Input Impedance (ZI) 50 Ω High Gain; GS=1
50 Ω Low Gain; GS=0Output Impedance (ZO) 50 Ω High Gain; GS=1
50 Ω Low Gain; GS=0Noise Figure (NF) 1.9 dB High Gain; GS=1
6 dB Low Gain; GS=0Gain (GTYP) 17 19 20 dB High Gain; GS=1
Gain Variation Over Temperature Range (GTEMP)
±1.0 dB -40°C to +85°C
Gain Variation Over Frequency Band (GFREQ)
0.5 dB
Low Gain (GLOW) -7 -5 -3 dB Low Gain; GS=0
Input IP3 -5 dBm High Gain; GS=115 dBm Low Gain; GS=0
Input 1dB Compression Point (ICP1dB)
-20 -18 dBm High Gain; GS=1
-15 dBm Low Gain; GS=0Isolation 33 dB RFOUT to RFIN
Turn-On Settling Time 10 uSRise and Fall Time (trtf) 10 uS
Power Supply ParametersSupply Voltage (VCC) 2.7 3.3 V
Current Consumption (ICC) 5.5 7.0 mA High Gain@25°C; GS=1
0.5 mA Low Gain@25°C; GS=0Standby Current (ICC) 10 uA L1=0; L2=0
Preliminary
4-478
RF2417
Rev A5 040908
ParameterSpecification
Unit ConditionMin. Typ. Max.
PCS1900MHz ModeLNA Parameters TAMBIENT=25°C, VCC=2.7V to 2.86V
Frequency Range (fIN) 1930 1990 MHz L1=1; L2=1
Input Impedance (ZI) 50 Ω High Gain; GS=1
50 Ω Low Gain; GS=0Output Impedance (ZO) 50 Ω High Gain; GS=1
50 Ω Low Gain; GS=0Noise Figure (NF) 1.9 2.0 dB High Gain; GS=1
6 dB Low Gain; GS=0Gain (GTYP) 16 17 19 dB High Gain; GS=1
Gain Variation Over Temperature Range (GTEMP)
±1.25 dB -40°C to +85°C
Gain Variation Over Frequency Band (GFREQ)
1.0 dB
Low Gain (GLOW) -7 -5 -3 dB Low Gain; GS=0
Input IP3 -3 dBm High Gain; GS=115 dBm Low Gain; GS=0
Input 1dB Compression Point (ICP1dB)
-20 -18 dBm High Gain; GS=1
-15 dBm Low Gain; GS=0Isolation 35 dB RFOUT to RFIN
Turn-On Settling Time 10 uSRise and Fall Time (trtf) 10 uS
Logic LevelsInput Low 0.5 VInput High 2 VInput Current 10 100 uAInput Impedance 40 kΩPower Supply ParametersSupply Voltage (VCC) 2.7 3.3 V
Current Consumption (ICC) 5.5 7.0 mA High Gain@25°C; GS=1
0.5 mA Low Gain@25°C; GS=0Standby Current (ICC) 10 uA L1=0; L2=0
Preliminary
4-479
RF2417
Rev A5 040908
Logic Control
Pin Function Description Interface Schematic1 EGSM900
INEGSM 900MHz LNA input. Requires DC blocking cap.
2 PCS1900 IN PCS 1900MHz LNA input. Requires DC blocking cap.
3 DCS1800 IN DCS 1800MHz LNA input. Requires DC blocking cap. See pin 2.
4 NC Connect to die flag.
5 DCS1800 GND
DCS 1800MHz LNA ground connect to die flag.
6 PCS1900 GND
PCS 1900MHz LNA ground connect to die flag.
7 Gain Select Gain select pin. Requires AC-coupling capacitor to ground (Logic 1: High Gain; Logic 0: Low Gain)
8 L2 Logic pin 2. Requires AC-coupling capacitor to ground. See pin 7.
9 DCS1800 OUT
DCS 1800MHz output. Internally matched to 50Ω.
10 1819 VCC DCS 1800MHz/PCS 1900MHz supply pin. This requires immediate AC-coupling to ground.
11 PCS1900 OUT
PCS 1900MHz output. Internally matched to 50Ω. See pin 9.
12 EGSM900 OUT
EGSM 900MHz output. Internally matched to 50Ω. See pin 9.
13 L1 Logic pin 1. Requires AC-coupling capacitor to ground. See pin 7.
14 900 VCC EGSM 900MHz supply pin. This requires immediate AC-coupling to ground.
15 Bias VCC Bias supply. Requires AC-coupling capacitor to ground.
16 EGSM900 GND
EGSM 900MHz ground.
Mode L1 L2 GSStandby 0 0 XEGSM900 High Gain 0 1 1
Low Gain 0 1 0DCS1800 High Gain 1 0 1
Low Gain 1 0 0PCS1900 High Gain 1 1 1
Low Gain 1 1 0
IN
GSM900 GND
IN
VCC
OUT
Preliminary
4-480
RF2417
Rev A5 040908
Application Schematic
BiasVCC
EGSM IN
PCS IN
DCS INGain
Select
100 pF
L2
DCS OUT
4 pF
PCS OUT
EGSM OUT
L1900 VCC
16 15 14 13
12
11
10
9
1
2
3
4
5 6 7 8
Bias andLogic
100 pF
33 nF
33 nF
33 nF
4.7 nH
5.6 nH
8.2 nH
100 pF 100 pF
100 pF
1819 VCC
Preliminary
4-481
RF2417
Rev A5 040908
Evaluation Board Schematic(Download Bill of Materials from www.rfmd.com.)
BiasVCC
GainSelect
C5100 pF
L2
C44 pF
L1
16 15 14 13
12
11
10
9
1
2
3
4
5 6 7 8
Bias andLogic
C6100 pF
C1133 nF
C1033 nF
C933 nF
L54.7 nH
L35.6 nH
L48.2 nH
C1100 pF
C2100 pF
C3100 pF
J4DCS OUT
50 Ω µstrip
1819 VCC
50 Ω µstrip J6PCS OUT
50 Ω µstrip J5EGSM OUT
900VCC
50 Ω µstripJ3EGSM IN
50 Ω µstripJ1PCS IN
50 Ω µstripJ2DCS IN
12
Header 2
JP1
VCC
C131 nF
C141 nF
C151 nF
C161 nF
C171 nF
C181 nF
GSBIAS VCC900 VCCL11819 VCCL21
3579
11
2468
1012
Header6x2
JP2
VCC
C191 nF
+ C121 uF
Preliminary
4-482
RF2417
Rev A5 040908
Evaluation Board LayoutBoard Size 1.5" x 1.6"
Board Thickness 0.58”, Board Material FR-4, Multi-Layer
Preliminary
4-483
RF2417
Rev A5 040908
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
EGSM High Gain Mode Input Impedance (S11)Swp Max
6GHz
Swp Min0.01GHz
6 GHz
4 GHz
2 GHz
1 GHz 750 MHz
500 MHz
10 MHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.04.
0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
EGSM High Gain Mode Output Impedance (S22)Swp Max
6GHz
Swp Min0.01GHz
3 GHz
2 GHz
1 GHz
500 MHz
10 MHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.04.
0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
EGSM Bypass Mode Input Impedance (S11)Swp Max
6GHz
Swp Min0.01GHz
6 GHz
4 GHz
2 GHz
1 GHz
3 GHz
500 MHz
10 MHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
EGSM Bypass Mode Output Impedance (S22)Swp Max
6GHz
Swp Min0.01GHz
3 GHz
2 GHz
1 GHz
500 MHz
10 MHz
Preliminary
4-484
RF2417
Rev A5 040908
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
DCS High Gain Mode Input Impedance (S11)Swp Max
6GHz
Swp Min0.01GHz
4 GHz
3 GHz
6 GHz
500 MHz
10 MHz
2 GHz
1 GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.04.
0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
DCS High Gain Mode Output Impedance (S22)Swp Max
6GHz
Swp Min0.01GHz
4 GHz
3 GHz
6 GHz
500 MHz
10 MHz
2 GHz
1 GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.04.
0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
DCS Bypass Mode Input Impedance (S11)Swp Max
6GHz
Swp Min0.01GHz
4 GHz 3 GHz
6 GHz
500 MHz
10 MHz
2 GHz
1 GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
DCS Bypass Mode Output Impedance (S22)Swp Max
6GHz
Swp Min0.01GHz
4 GHz3 GHz
6 GHz
500 MHz
10 MHz
2 GHz
1 GHz
Preliminary
4-485
RF2417
Rev A5 040908
NOTES:1. All plots shown were taken at VCC=2.8V and room ambient temperature.2. All S11 and S22 plots shown were taken from an RF2417 assembled on a 2417310 evaluation board. The data wasextracted without the external input or output tuning components in place and the reference points at the RF IN andRFOUT pins of the device.
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
PCS High Gain Mode Input Impedance (S11)Swp Max
6GHz
Swp Min0.01GHz
3 GHz
2 GHz1 GHz
500 MHz
10 MHz
6 GHz
4 GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.04.
0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
PCS High Gain Mode Output Impedance (S22)Swp Max
6GHz
Swp Min0.01GHz
3 GHz
2 GHz
1 GHz
500 MHz
10 MHz6 GHz
4 GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.04.
0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
PCS Bypass Mode Input Impedance (S11)Swp Max
6GHz
Swp Min0.01GHz
3 GHz 2 GHz
1 GHz 500 MHz
10 MHz
6 GHz
4 GHz
0 1.0
1.0
-1.0
10.0
10.0
-10.0
5.0
5.0
-5.0
2.0
2.0
-2.0
3.0
3.0
-3.0
4.0
4.0
-4.0
0.2
0.2
-0.2
0.4
0.4
-0.4
0.6
0.6
-0.6
0.8
0.8
-0.8
PCS Bypass Mode Output Impedance (S22)Swp Max
6GHz
Swp Min0.01GHz
3 GHz
2 GHz
1 GHz
500 MHz
10 MHz
6 GHz
4 GHz
Preliminary
4-486
RF2417
Rev A5 040908
EGSM Gain versus FrequencyHigh Gain Mode, PIN=-35dBm, VCC=2.8V
14.0
15.0
16.0
17.0
18.0
19.0
20.0
920.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 965.0
Frequency (MHz)
Gai
n (d
B)
+25°C Gain-40°C Gain+85°C Gain
EGSM Input IP3 versus Supply VoltageHigh Gain Mode, -35dBm per tone, 1MHz Separation, 940MHz
-10.0
-9.0
-8.0
-7.0
-6.0
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
IIP3
(dB
m)
+25°C IIP3-40°C IIP3+85°C IIP3
EGSM Gain versus Supply VoltageHigh Gain Mode, PIN=-35dB, 940MHz
14.0
15.0
16.0
17.0
18.0
19.0
20.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Gai
n (d
B)
+25°C Gain
-40°C Gain
+85°C Gain
EGSM Noise Figure versus FrequencyHigh Gain Mode, VCC=2.7V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
920.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 965.0
Frequency (MHz)
Noi
se F
igur
e (d
B)
+25°C NF
-40°C NF
+85°C NF
EGSM Noise Figure versus Supply VoltageHigh Gain Mode, 940MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Noi
se F
igur
e (d
B)
+25°C NF
-45°C NF
+85°C NF
EGSM Input IP3 versus FrequencyHigh Gain Mode, -35dBm per tone, 1MHz Separation, VCC=2.8V
-10.0
-9.0
-8.0
-7.0
-6.0
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
920.0 925.0 930.0 935.0 940.0 945.0 950.0 955.0 960.0 965.0
Frequency (MHz)
IIP3
(dB
m)
+25°C IIP3
-40°C IIP3+85°C IIP3
Preliminary
4-487
RF2417
Rev A5 040908
DCS Gain versus FrequencyHigh Gain Mode, PIN=-35dBm, VCC=2.8V
15.0
16.0
17.0
18.0
19.0
20.0
21.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Gai
n (d
B)
+25°C Gain
-40°C Gain
+85°C Gain
DCS Input IP3 versus FrequencyHigh Gain Mode, -35dBm per tone, 1MHz Separation, VCC=2.8V
-8.0
-7.0
-6.0
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
IIP3
(dB
m)
+25°C IIP3
-40°C IIP3
+85°C IIP3
DCS Input IP3 versus Supply VoltageHigh Gain Mode, -35dBm per tone, 1MHz Separation, 1845MHz
-8.0
-7.0
-6.0
-5.0
-4.0
-3.0
-2.0
-1.0
0.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
IIP3
(dB
m)
+25°C IIP3
-40°C IIP3
+85°C IIP3
DCS Gain versus Supply VoltageHigh Gain Mode, PIN=-35dBm, 1845MHz
15.0
16.0
17.0
18.0
19.0
20.0
21.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Gai
n (d
B)
+25°C Gain
-40°C Gain
+85°C Gain
DCS Noise Figure versus FrequencyHigh Gain Mode, VCC=2.7V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Noi
se F
igur
e (d
B)
+25°C NF
-40°C NF
+85°C NF
DCS Noise Figure versus Supply VoltageHigh Gain Mode, 1845MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Noi
se F
igur
e (d
B)
+25°C NF
-45°C NF
+85°C NF
Preliminary
4-488
RF2417
Rev A5 040908
PCS Gain versus FrequencyHigh Gain Mode, PIN=-35dBm, VCC=2.8V
14.0
15.0
16.0
17.0
18.0
19.0
20.0
1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0
Frequency (MHz)
Gai
n (d
B)
+25°C Gain
-40°C Gain
+85°C Gain
PCS Input IP3 versus FrequencyHigh Gain Mode, -35dBm per tone, 1MHz Separation, VCC=2.8V
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0
Frequency (MHz)
IIP3
(dB
m)
+25°C IIP3
-40°C IIP3
+85°C IIP3
PCS Input IP3 versus Supply VoltageHigh Gain Mode, -35dBm per tone, 1MHz Separation, 1960 MHz
-3.0
-2.0
-1.0
0.0
1.0
2.0
3.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
IIP3
(dB
m)
+25°C IIP3
-40°C IIP3
+85°C IIP3
PCS Gain versus Supply VoltageHigh Gain Mode, PIN=-35dBm, 1960MHz
14.0
15.0
16.0
17.0
18.0
19.0
20.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Gai
n (d
B)
+25°C Gain
-40°C Gain
+85°C Gain
PCS Noise Figure versus Supply VoltageHigh Gain Mode, 1960MHz
0.0
0.5
1.0
1.5
2.0
2.5
3.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Noi
se F
igur
e (d
B)
+25°C NF
-45°C NF
+85°C NF
PCS Noise Figure versus FrequencyHigh Gain Mode, VCC=2.7V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1920.0 1930.0 1940.0 1950.0 1960.0 1970.0 1980.0 1990.0 2000.0
Frequency (MHz)
Noi
se F
igur
e (d
B)
+25°C NF
-40°C NF
+85°C NF
Preliminary
4-489
RF2417
Rev A5 040908
PCS Current versus Supply VoltageHigh Gain Mode, PIN=-35dBm, 1960MHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
X Axis Label (units)
Cur
rent
(m
A)
+25°C Current
-40°C Current
+85°C Current
DCS Current versus Supply VoltageHigh Gain Mode, PIN=-35dBm, 1845MHz
2.0
3.0
4.0
5.0
6.0
7.0
8.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Cur
rent
(m
A)
+25°C Current
-40°C Current
+85°C Current
EGSM Current versus Supply VoltageHigh Gain Mode, PIN=-35dBm, 940MHz
1.0
2.0
3.0
4.0
5.0
6.0
7.0
2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
Supply Voltage (V)
Cur
rent
(m
A)
+25°C Current-40°C Current+85°C Current
Preliminary
4-490
RF2417
Rev A5 040908
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