PPM Surface Plasmon Presentation 2005

8/2/2019 PPM Surface Plasmon Presentation 2005

1/27

Surface plasmon nanophotonics:opt ics below the dif fract ion limit

Albert Polman

Center for nanophotonicsFOM-Inst itute AMOLF, Amsterdam

Jeroen KalkmanHans MertensJoan PenninkhofRene de Waele

Teun van Dillen

Jen DionneLuke Sweat lockHarry Atwater

Arj en VredenbergChristina GrafAlfons van Blaaderen

PPM conference, Ut recht, 10-2-2005


2/27

Optical fiber: long distance communication


3/27

Photonic integrated circuits on silicon

1 mm

SiO2/Al2O3/SiO2/Si

with C. van Dam, M.K. Smit, TUD


4/27

The worlds smallest erbium-doped optical amplifier

1.53 m signal, 1.48 m pump, 10 mW, gain: 2.3 dB

Waveguide spiral size: 1 mm2

minimum bending radius > 50 mAppl. Phys. Lett. 68, 1886 (1996)


5/27

From a FOM/ PPM prototype to a 40 M$ company

SymmorphixSunnyvaleCA, USA


6/27

The first Er laser on Si fully made with CMOS technology

1500 1550 1600

-60

-50

-40

-30

-20

Signal(dBm)

Wavelength (nm)

Single-mode lasing

with K. Vahala group, CALTECHAppl. Phys. Lett. 84, 1037 (2004)Phys. Rev. A 70, 033803 (2004)

Nanophoto

nicmaterials

group


7/27

Surface plasmon: EM wave at metal-dielect ric interface

z

x

( )tzkxki zxeEtzxE= 0),,(

rr

2/1

"'

+=+=

dm

dmxxx

cikkk

=

ck


8/27

Dielect ric constants for silver: = + i

200 400 600 800 1000 1200 1400 1600 1800-150

-100

-50

0

50

Measured data:

'

"Drude model:

'"

Modified Drude model:

'

"

Wavelength (nm)

'

bound SP mode: m < -d

-d


9/27

Re kx

d

xck

Surface plasmons dispersion:

large k

small wavelength

Ar laser:

vac = 488 nmdiel = 387 nm

SP= 100 nmAg/ SiO2

X-ray wavelengthsat optical frequencies

2/1

+=

dm

dm

xc

k

3.4 eV(360 nm)


10/27

SPs can have very long propagat ion distance

100 m

High lossin regionof small SP

Tune SPdispersionwith index

dielectric


11/27

Photonic integrated circuits on silicon

1 mm

SiO2/Al2O3/SiO2/Si

Plasmonic

Al

Opto-electronic integration, (e.g. interconnects)Plamonic nanolithography

10 m


12/27

Surface plasmons can improve solid state lighting

interaction between plasmon and radiating dipole

1450 1500 1550 1600 16500.0

0.2

0.4

0.6

0.8

1.0

0 5 10 15 20 25

e-3

e-2

e-1

e0

Energy (eV)

NormalizedPLintensity

Wavelength (nm)

0.84 0.82 0.8 0.78 0.76

4I

15/2

4I

13/2

Silver

Air

= 1.0 Er/cm2

Normalized

intensity

Time (ms)

500 keV Er

silver

glass

glass


13/27

far-fieldemission

metal

Wrad

WSP

Coupling to surface plasmons

Wtot = Wrad + WSP


14/27

10-1

100

101

102

103

104

105

106

1E-3 0.01 0.1 1 1010

-1

100

101

102

103

104

105

0 250 500 750 1000 1250 15000.0

0.5

1.0

1.5

Wnr

WSP

Wrad

Wtotal

Er distribution

Glass

Silv

er

Glass

Air

Distance (nm)

Normal

ize

ddecayra

te

0.6

0.8

1.0

Wrad

P

ower

k (kglass

)

Decay rate as a function of distance to metal

=1535 nm

0.0 10.0 20.0 30.0

0.13534

0.36788

1

2.71828

Air

=9.3 ms

Ag

=5.8 ms

ln(normalizedintensity)

time (ms)

Decay near Agis faster thanin air

Appl. Phys. Lett . in press (2005)


15/27

Si quantum dots at dif ferent depths: theory & experiment

0 200 400 600

1xe-4

1xe-3

1xe

-2

1xe-1

1xe0

Ag

Air

PLint

ens

ity

Time (s)

=750 nm, d=40 nm

0 100 200 300 400 500 600 7000.0

1.0

2.0

3.0

4.0

ExcessSi(1021Si/cm

3)

Depth (nm)

0.8

1.0

1.2

1.4

1.6

em=750 nm

silver-glass interface

air-glass interface

Norma

lizeddecayrate

0 100 200 300 4000

1

2

3

Depth (nm)

em

=750 nm

Air

Ag

Decayrate(10

4s

-1)

Couplingto SPs


16/27

far-fieldemission

metal

recycling of anon-radiativedecay path!

Wrad

WSP

Wrad+WSP

QE 1

Turning a slow emitter into a fast emitter

Applications:

Fast modulat ion of Er LEDs, Si quantum dot LEDSIncreased quantum eff iciency of solid state emit ters


17/27

Ag

Erbium ions implanted in silica glass subst rate

Grat ing etched in sil ica Ag f ilm deposit ed

SiO2

Herasil glass - 250 m thick

350 keV keV Er, 1.21015 cm-2 , 77 KThermal anneal 800 C, 1 hr

e-beam lithography, dry etchinggrating: p=10701 nm, d=230 nmAg sputter evaporation (t=300 nm)

pump=488 nm

Er


18/27

PL intensity as a function of angle (=1534 nm)

0 20 40 60 80Angle (

o)

's'

's'

Angle (o)

0 20 40 60 80

0

2

4

6

'p'

'p'

PL

Intensity

Appl. Phys. Lett. 83, 4137 (2003)


19/27

Dispersion of thin-film surface plasmons

Two surface plasmon modes

L-

L-(symm)

Thinner film:Shorter SPwavelength

Example:

HeNe = 633 nmSP = 60 nm

L+(asymm)


20/27

Thin-f ilm surface plasmons: propagat ion length

More loss forthinner f ilms

Less loss forthinner f ilms

L-(symm)

L+(asymm)

Challenge: fabricate smooth thin metal f ilms


21/27

Dispersion-controlled plasmonic devices

0 200 4 00 600 80 0 1000

-1.0

-0.5

0.0

0.5

1.0

Y

Ax

isTitle

Distance (nm)

Plasmonic concentrator

Si

Ag

NC

Small SPLarge field

enhancementvgroup=0

Elect rically pumpedsingle-mode SP source

Plasmonic lens

thin section Surface plasmon laser

Si

Ag

NC

Th l i f i f l i h


22/27

m= 2.2

Low frequency

Er

On resonance

Er

The ult imate confinement of light :surface plasmons in metal nanoparticles

Electromagnet ic energy

t ransfer well below dif fract ionlimit high int egrat ion densit y:

t rue nanophot onics

Surface-enhanced Raman scat t eringSurface-enhanced f luorescencesingle molecule det ect ion

(S. A. Maier et al .)

Metal nanopart icles

Molecules

SiO2

nm


23/27

Tuning the plasmon resonance by shape: core-shell colloids

30 MeV Cu

31014 cm-2

Adv. Mater. 16, 235 (2004)

Au/ SiO2

500 nm

400 600 800 1000 1200 1400 1600

0.6

0.7

0.8

0.9

1.0

extinction

[a.u.]

[nm]

SiO2/ Ag

nm

Adv. Mater. In press (2005)


24/27

10 nm 30 MeV Si9x1014/ cm2

s-pol

p-pol

Modeling plasmon resonances in particle arrays

Phys. Rev. B., in press (2005)

5000-fold enhancementfield concentration: r=3 nm (3 dB)

Appl. Phys. Lett. 83, 4137 (2003)

nm


25/27

Nanophot

onicmaterials

group

Final goal: surface plasmon nanophotonic waveguides

500 nm

Plasmonics: energy t ransferand confinement of light

below the dif fract ion limit

500 nm

nm


26/27

Group leaders A. Polman K. Kuipers A. Lagendij k W.L. Vos J. Verhoeven

A. Tip NN (Philips)

Total staff 45 fte

Cente

rforNanophotonics

Fundamental Reseach & Innovat ionCenter for NanophotonicsFOM-Inst itute AMOLF

Nanophotonics is a unique field ofresearch because it combines

a wealth of scientific challengeswith a large variety of

near-term applications.

Fundamental

concept

Prototype

component

Materials

development

Transfer to

industry

www erbium nlC l i


27/27

www.erbium.nlConclusions

mkm mm

photonics

plasmonics

PPM Surface Plasmon Presentation 2005

Documents