Document Number: 91299 www.vishay.com S09-0057-Rev. A, 02-Feb-09 1 Power MOSFET IRL530, SiHL530 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive •R DS(on) Specified at V GS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 °C, L = 1.9 mH, R G = 25 Ω I AS = 15 A (see fig. 12). c. I SD ≤ 15 A, dI/dt ≤ 140 A/μs, V DD ≤ V DS , T J ≤ 175 °C. d. 1.6 mm from case. PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nC) 28 Q gs (nC) 3.8 Q gd (nC) 14 Configuration Single N-Channel MOSFET G D S TO-220 G D S Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 Lead (Pb)-free IRL530PbF SiHL530-E3 SnPb IRL530 SiHL530 ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 10 Continuous Drain Current V GS at 5.0 V T C = 25 °C I D 15 A T C = 100 °C 11 Pulsed Drain Current a I DM 60 Linear Derating Factor 0.59 W/°C Single Pulse Avalanche Energy b E AS 290 mJ Repetitive Avalanche Current a I AR 15 A Repetitive Avalanche Energy a E AR 8.8 mJ Maximum Power Dissipation T C = 25 °C P D 88 W Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T J , T stg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300 d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply
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Power MOSFET · 2019-10-13 · Power MOSFET IRL530, SiHL530 Vishay Siliconix FEATURES • Dynamic dV/dt Rating † Repetitive Avalanche Rated † Logic-Level Gate Drive †RDS(on)
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Document Number: 91299 www.vishay.comS09-0057-Rev. A, 02-Feb-09 1
Power MOSFET
IRL530, SiHL530Vishay Siliconix
FEATURES• Dynamic dV/dt Rating• Repetitive Avalanche Rated• Logic-Level Gate Drive• RDS(on) Specified at VGS = 4 V and 5 V• 175 °C Operating Temperature• Fast Switching • Ease of Paralleling• Lead (Pb)-free Available
DESCRIPTIONThird generation Power MOSFETs from Vishay provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and costeffectiveness.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220 contribute to its wideacceptance throughout the industry.
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. VDD = 25 V, starting TJ = 25 °C, L = 1.9 mH, RG = 25 Ω IAS = 15 A (see fig. 12).c. ISD ≤ 15 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.d. 1.6 mm from case.
PRODUCT SUMMARYVDS (V) 100
RDS(on) (Ω) VGS = 5.0 V 0.16
Qg (Max.) (nC) 28
Qgs (nC) 3.8
Qgd (nC) 14
Configuration Single
N-Channel MOSFET
G
D
S
TO-220
G D
S
Available
RoHS*COMPLIANT
ORDERING INFORMATIONPackage TO-220
Lead (Pb)-freeIRL530PbFSiHL530-E3
SnPbIRL530SiHL530
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise notedPARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100V
Gate-Source Voltage VGS ± 10
Continuous Drain Current VGS at 5.0 VTC = 25 °C
ID15
ATC = 100 °C 11
Pulsed Drain Currenta IDM 60
Linear Derating Factor 0.59 W/°C
Single Pulse Avalanche Energyb EAS 290 mJ
Repetitive Avalanche Currenta IAR 15 A
Repetitive Avalanche Energya EAR 8.8 mJ
Maximum Power Dissipation TC = 25 °C PD 88 W
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Mounting Torque 6-32 or M3 screw10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 912992 S09-0057-Rev. A, 02-Feb-09
IRL530, SiHL530Vishay Siliconix
Notesa. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGSPARAMETER SYMBOL TYP. MAX. UNIT
Document Number: 91299 www.vishay.comS09-0057-Rev. A, 02-Feb-09 7
IRL530, SiHL530Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91299.
P.W.Period
dI/dt
Diode recoverydV/dt
Ripple ≤ 5 %
Body diode forward dropRe-appliedvoltage
Reverserecoverycurrent
Body diode forwardcurrent
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D = P.W.Period
+
-
+
+
+-
-
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
RG
VDD
• dV/dt controlled by RG• Driver same type as D.U.T.• ISD controlled by duty factor "D"• D.U.T. - device under test
All product specifications and data are subject to change without notice.
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