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Short Term Mobility 2016 Cefarin Nicola
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POROUS PEROVSKITE NANOCRYSTALS FOR
PHOTOVOLTAIC APPLICATION
Cefarin Nicola, PhD student
DIPARTIMENTO DI SCIENZE FISICHE E TECNOLOGIA DELLA MATERIA
CNR-IOM - Istituto Officina dei Materiali
Headquarters (Trieste, TASC)
c/o Area Science Park - Basovizza
Strada Statale 14 km 163,5 - 34149 Trieste
Final report
Thanks to the support of the Short Term Mobility (STM), I have
performed my research activity in the
group of Francesca Toma at the Joint Center for Artificial
Photosynthesis (JCAP),in the Chemical Sciences
Division at the Lawrence Berkeley National Laboratories (LBNL).
My project has focused on the synthesis
and characterization of i) a new deposition process called Low
Pressure Vapor Assisted Solution Process
(LP-VASP), previously developed at LBNL20, and ii) of porous
polycrystalline perovskites synthesized at
our laboratories (TASC, Trieste).
Introduction:
Hybrid organic-inorganic lead halide perovskites (CH3NH3PbX3, X
= I, Br, Cl) are a new class of
semiconductors that has emerged rapidly within the last few
years. This material class shows excellent
semiconductor properties, such as high absorption coefficient1,
tunable bandgap2, long charge carrier
diffusion length3, high defect tolerance4, and high
photoluminescence quantum yield5,6. The unique
combination of these characteristics makes lead halide
perovskites very attractive for application in
optoelectronic devices, such as single junction7,8 and
multijunction photovoltaics9,10, lasers5,11, and
LEDs12.
CH3NH3PbX3 films can be fabricated by a variety of synthetic
methods13, which aim at improving the
efficiency of this semiconducting material for energy
applications14. However, optimization of
photovoltaic devices relies on the quality of the halide
perovskite active layer, as well as its interfaces
with charge selective contacts (i.e. electron and hole transport
layers), which facilitate photocarrier
collection in these devices. Specifically, continuous,
pinhole-free active layers are necessary to minimize
shunt resistance, thereby improving device performance.
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Among the most widespread methods for fabricating halide
perovskite thin films are solution-based and
vacuum-based processes. The most common solution process uses
equimolar ratios of lead halide and
methylammonium halide dissolved in dimethylformamide (DMF),
dimethylsulfoxide (DMSO), or γ-
butyrolactone (GBL), or mixtures of these solvents.2,15,16
Precursor molarity and solvent type, as well as
annealing temperature, time and atmosphere, must be precisely
controlled to obtain continuous and
pinhole-free films.15 For example, to improve surface coverage,
a solvent-engineering technique was
demonstrated to yield dense and extremely uniform films.16 In
this technique, a non-solvent (toluene) is
dripped onto the perovskite layer during the spinning of the
perovskite solution.16 These approaches are
usually well suited for mesoscopic heterojunctions, which employ
mesoporous TiO2 as an electron
selective contact with increased contact area and reduced
carrier transport length.
However, planar heterojunctions, which use selective contacts
based on thin (usually TiO2) films, are
more desirable because they provide a simple and scalable
configuration that can be more easily
adopted in solar cell technology. Therefore, the development of
halide perovskite active layers that
show high efficiency and stability under operation for planar
heterojunctions may lead to technological
advancements in this field. However, one of the main challenges
to fabricate planar heterojunctions is
still represented by the homogeneity of the active layer. A few
attempts, based on vacuum processes,
have been made to prepare uniform layers on thin TiO2 films. For
example, Snaith and collaborators
have demonstrated a dual evaporation process, which yield highly
homogenous perovskite layers with
high power conversion efficiencies for photovoltaic
applications.17 While this work represents a
significant advancement in the field, the use of high vacuum
systems and the lack of tunability of the
composition of the active layer limit the applicability of this
method.
i) Synthesis and characterization of low pressure vapor-assisted
solution process (LP-VASP)
Motivation: Interestingly, extremely high uniformity has been
achieved with the vapor-assisted solution
process (VASP)18 and modified low pressure VASP (LP-VASP)6,19.
While the VASP, proposed by Yang and
collaborators18, requires higher temperatures and the use of a
glove box, the LP-VASP is based on the
annealing of a lead halide precursor layer in the presence of
methyl ammonium halide vapor, at reduce
pressure and relatively low temperature in a fume hood. These
specific conditions enable access mixed
perovskite compositions, and fabrication of pure MAPbI3,
MAPbI3-xClx, MAPbI3-xBrx, and MAPbBr3 can be
easily achieved. Specifically, CH3NH3PbI3-xBrx films over the
full composition space can be synthesized
with high optoelectronic quality and reproducibility6,19. In the
LP-VASP, formation of CH3NH3PbX3 films
consists of a two-step procedure that comprises i) the
spin-coating of the PbI2/PbBr2 (or PbI2, or
PbI2/PbCl2) precursor on glass substrate or fluorine-doped tin
oxide (FTO) coated glass substrate with
planar TiO2, as electron transport layer, and ii) the low
pressure vapor-assisted annealing in mixtures of
CH3NH3I and CH3NH3Br that can be finely adjusted depending on
the desired optical band gap (1.6 eV
Eg 2.3 eV). Under these conditions, the methylammonium halide
molecules present in the vapor phase
slowly diffuse into the lead halide thin film yielding
continuous, pinhole-free halide perovskite films. This
process yields a two-fold volume expansion from the starting
lead halide precursor layer to the
completed organic-inorganic lead halide perovskite. The standard
thickness of the perovskite film is
about 400 nm. It is possible to vary this thickness between
100-500 nm by changing the speed of the
second spin coating step. The presented technique results in
films of high optoelectronic quality, which
translates to photovoltaic devices with power conversion
efficiencies of up to 19% using a Au/spiro-
OMeTAD /CH3NH3PbI3-xBrx/compact TiO2/FTO/glass solar cell
architecture.19
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Methodology and results: In detail, before the perovskite
deposition several conducting and
semiconducting materials need to be processed and deposited for
the fabrication of a complete solar
cell. On cleaned glass coated with fluorine-doped tin oxide
(FTO),a compact TiO2 layer is deposited by e-
beam evaporation while the substrate is kept at the temperature
of 350°C.E-beam deposited TiO2 layers
have native defects due to the presence of an oxygen-deficient
environment during the electron beam
evaporation. Therefore, the deep-level hole traps introduced in
the TiO2 layer contribute to a high
power conversion efficiencies of and enhanced long-term
stability.19
Once the TiO2 layer is deposited on the glass/FTO substrate it
is possible to start with the LP-VASP
process which could be divided in two sequential steps:
1. Deposition of the lead halide (PbX2)precursor;
2. Conversion of the PbX2layer into perovskite with
methylammonium halideCH3NH3X(also called
MAX).
The lead halide precursor (PbI2 or PbBr2 or a mix of both)
dissolved in N,N-dimethylformamide (DMF) is
spin coated on the glass/FTO/TiO2substrateand dried on a hot
plate for 15’ at 110ᵒC. The setup (fig 1a)
for the second step comprises a Schlenk line equipped with a
vacuum pump and with Schlenk tubes. In
these tubes, we place the MAX powder on the bottom, and the
glass/FTO/TiO2/PbX2 substrates slightly
above the MAX precursor powder. The tubes (fig 1b) are immersed
in an oil bath at 120°C and kept at a
reduced pressure (0.185 torr) for 2 hours. The lead halide
precursor thin film starts converting into the
perovskite material due to the MAX incorporation: at this
temperature and pressure the MAX powder
sublimates and saturates the atmosphere inside the tube and
slowly diffuses in the lead halide film.
Figure 1 a) LP-VASP setup
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Figure 1 b) Tube immersed in oil bath at 120ᵒC; c) Tube with
sample during the process.
During this time, it is possible to observe the color change of
the sample from yellow due to
PbI2/PbBr2layer to dark brown for CH3NH3PbI3 and again from
yellow to orange
forCH3NH3PbBr3perovskite.After 2h the sample is carefully
removed from the tube, rinsed in isopropyl
alcohol (IPA) to wash away the non-reacted MAX form the surface
and finally dried with the N2 flow. By
using different PbX2 (PbI2 or PbBr2) precursors and MAX (CH3NH3I
or CH3NH3Br) for the conversion, it is
possible to tune the final composition of the perovskite from
pure CH3NH3PbI3 (through several
CH3NH3PbI3-XBrX mixed perovskites) to pure CH3NH3PbBr3.
Accessing different perovskite composition is
key to tune the band gap of this material.
After this step ,the Spiro-OMeTAD hole transport material (HTM)
and the gold back electrode are
sequentially deposited through spin coating and thermal
evaporation, respectively. Figure 2shows an
example of a complete solar cell that I fabricated during my
stay at LBNL.
Figure 2: LP-VASP perovskite based solar cells with different
photoactive layers:
on leftCH3NH3PbBr3 while on the right CH3NH3PbI3.
Once the solar cell is complete, it is possible to characterize
the device with JV curve measurements
(Plot1). In this type of measurement, the current density (J) is
measured as a function of the applied
voltage (V). From this data, the relevant figures of merit of
the solar cell (VOC, ISC and FF) can be extracted
and used to calculate the power conversion efficiency (η).
Substrate
Powder
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Plot 1: I-V curve of one of the solar cells with CH3NH3PbI3 as
perovksite photoactive layer.
This device shows η= 9.02% that is a good value compared with
the best efficiencies reached at the IOM-
CNR laboratories (around 6%). The characterization reported
represents my first attempt of synthesizing
and characterizing a solar cell with this new technique. This
measurement proves that LP-VASP is easy to
manage also for non-expert users. Once the same setup will be
reproduced at the IOM-CNR
laboratories, I will acquire more experience with it and it will
be possible to obtain high efficient devices.
ii) Synthesis and characterization of porous polycrystalline
perovskites
Motivation: Through the LP-VASP, it has been demonstrated that
thin film crystallographic texture (i.e.
preferential grain orientation) can have a significant impact on
photovoltaic performance.6By probing
the photovoltaic properties at the nanoscale, it has been found
that there exists facet-dependent defect
concentrations that lead to significant photovoltage
inhomogeneity within.20 This research points to new
ways to engineer interfaces and synthesis conditions of halide
perovskites to obtain higher efficiency.
Despite rapid progress in the field, a number of fundamental
questions remain in order to understand
the optoelectronic and transport properties of halide
perovskite-based photovoltaic devices and to
determine the role of local inhomogeneity on electronic
properties correlated with specific
crystallographic orientations.
While in Trieste, I developed a synthetic methodology to obtain
well-faceted perovskite cubes, which
are particularly suitable for understanding how electronic
properties correlate with crystallographic
orientation through advance photoconductive atomic force
microscopy characterization. The perovskite
cubes I can produce show defined orientation and facets and
allow to more precisely correlate local
property variations with macroscopic characteristics. In
addition, the achieved control over the structure
and crystallographic orientation allow us to better understand
roles of grain boundaries, local
compositional disorder, and fundamental charge separation and
transport mechanisms in this materials
system.
Methodology and results: Since the perovskite material is
moisture sensitive it was necessary to prepare
the samples at the hosting facility (LBNL). There I had to adapt
my methodology to the infrastructure
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and available equipment, as the perovskite crystal growth is
heavily dependent on the conditions used
for the process. I was eventually able to reproduce the
synthesis and to achieve a better understanding
of the process and on the parameters that determine the
formation of the desired structure.
For this experiment, I have first synthesized theCH3NH3I and
CH3NH3Br precursors. These molecules have
been characterized with 1H-NMR (Plot 2a and 2b)and 13C-NMR
techniques.
Plot 2: a) 1H-NMR of synthesized CH3NH3I and b)
1H-NMR of synthesized CH3NH3Br.
The porous polycrystalline perovskite film is obtained in
N2filled glove bag by spin coating the PbI2 (1.0
M in DMF) precursor and annealing it at 95ᵒC for 15 min. The
sample is first dipped in isopropyl alcohol
(IPA) for 10” to pre-wet the layer, then immersed in MABr
solution (5 mg/mL in IPA) for 45”, and finally
rinsed in IPA to wash the MABr excess from the top of the film.
After this first step a layer of well shaped
cubic crystals is obtained (fig3a). The samples is then immersed
in MAI solution (8 mg/mL in IPA) for 90”,
rinsed in IPA, and annealed at 95ᵒC for 15 min to yield the
final porous material (fig 3b).In addition to
understand and correlate electronic properties with crystal
facets, this unique morphology could be
exploited to increase the surface contact between the perovskite
and the hole transporting material
(HTM) such as Spiro-OMeTAD in order to enhance the holes
extraction rate from the photoactive layer.
Figure 3: a) SEM image of the polycrystalline perovskite after
the first dipping in MABr/IPA solution;
b) SEM image of the porous perovskite layer after the second
dipping in MAI/IPA solution.
Once I have obtained the layer, I have first characterized its
morphology by SEM images.
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Then, I have characterized these films by X-ray
diffraction(XRD), after the first (Plot 3a) and the second
dipping steps (Plot3b). In the XRD pattern in Plot3a, it is
possible to notice that the peak at 2 Theta
12.68°,assigned to PbI2, is intense as well as the perovskite
peak at 14.58°, thereby showing that the
perovskite formation is not still complete. In the second XRD
pattern, while the perovskite peak
increases, the PbI2 peak decreases in intensity, there by
indicating the conversion is almost complete.
Plot 3: a) XRD of the polycrystalline perovskite after the first
dipping in MABr/IPA solution;
b)XRD of the porous perovskite layer after the second dipping in
MAI/IPA solution.
In order to test the efficiency of this material, I have
fabricated a solar cell with the porous
polycrystalline perovskite.100 nm of TiO2 were e-beam evaporated
on cleaned glass-FTO coated
substrate. The perovskite layer was then deposited as described.
To complete the device, Spiro-
OMeTAD HTL was spin coated, then a gold back contact thermally
evaporated. Unfortunately the so
fabricated device was not working as expected, and more
optimization is needed. From the J-V
characterization, it was possible to observe that both series
resistance (1.8E+7 Ω) and shunt resistance
(8.1E+6Ω) are very high meaning that the device has shunt
pathways due to the presence of pinholes.
The total coverage of the perovskite layer is necessary to have
high efficient solar cells.
Plot 4: I-V curve porous polycrystalline perovksite based solar
cell.
However, these perovskite structure are now going to be
characterized by PC-AFM, as a result of this
collaboration.
0,00
200,00
400,00
600,00
800,00
10,00 12,00 14,00 16,00Inte
nsi
ty [
arb
un
its]
2 Theta [ᵒ]
PbI2/MABr
0,00
400,00
800,00
1200,00
10,00 12,00 14,00 16,00
Inte
nsi
ty [
arb
. un
its]
2 Theta [ᵒ]
PbI2/MABr/MAI
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Summary and outcome: To summarize it was possible to learn the
LP-VASP process that I will reproduce
at the IOM-CNR laboratory. This process could be exploited to
reach high efficient solar cell and to
combine our know-how on nano-fabrication with the more specific
perovskite experience of the Toma’s
group.
A secondary aspect that will be taken in consideration is the
deposition of the TiO2 layer through the e-
beam evaporation. It seems to be highly reproducible and allows
to reach high VOC. At the IOM-CNR it is
possible to deposit the layer with this technique but an upgrade
is needed to keep the sample at the
desired temperature (350ᵒ).
The porous polycrystalline perovskite even if promising needs a
further optimization if it would be used
for a solar cell. The next steps will be focused on the
improving of crystal size control and coverage
uniformity in order to obtain a suitable layer for the
photovoltaic device.
This project has allowed me to start a new collaboration between
my supervisor Dr. Massimo
Tormen(IOM-CNR) and Francesca Toma (JCAP-LBNL), in order to
merge our knowledge and fabricate
high efficient solar cells.
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