Toshihiko Baba Yokohama National University Photonic Crystals and Si Photonics Photonic Crystals and Si Photonics Toshihiko Baba [email protected] Yokohama National University http://www.dnj.ynu.ac.jp/baba-lab/babalabe.htm
Toshihiko Baba
Yokohama National University
Photonic Crystalsand Si Photonics
Photonic Crystalsand Si Photonics
Toshihiko Baba [email protected]
Yokohama National University http://www.dnj.ynu.ac.jp/baba-lab/babalabe.htm
Photonic Nanostructures
High Index Contrast Structure: HIC
n1
n0
n1
n0
Total reflection
Bragg reflection Bragg scattering
2D
Wire Disk Mesa
3D1D
1 m
Brillouinzone
X
X
UW
L
K
Γ
X
X
JΓ
1μm
1μm
1μm
Photonic Crystals: PC
0.2 μm
Holey fiber withsmall mode size
Mode size converter
MUX by super prismand superlens
Nanocavitydrop switch
Slowlightbuffer
Photonic crystal slowlight waveguide
Nanolaser, nanocavity, slow light waveguide,
negative refractive optics, etc. realize novel light
emitters and light control devices
Slowlightamplifier
Nanocavitycross-connect
Nanocavity-converter
Nanocavityadd switch
Nanolaser signal source
Integratedisolator
Electronics
Resonantphotodetector
Nanolaserfor -converter
Innovation in Photonic Integrationby Photonic Nanostructures
Innovation in Photonic Integrationby Photonic Nanostructures
Innovation in Photonic Integrationby Photonic Nanostructures
Photonic crystalnanocavity device
Silicon photonicsdevices
PC and HIC Silicon photonics allow densely
integrated advanced photonic chip
T. Baba, nature photonics 1, 22 (2007)
Photonic crystal slab
consisting of Airholes
Airbridge
membraneSubstrate
GaInAsP quantum well
active layer
Nozaki et al. EL 41, 15843 (2005); APL 88, 211101 (2006); OE 15, 7506 (2007)
Press released from OSA
Hz +–500 nm
Point shiftnanocavity
Laser Mode
Room Temperature CW Photonic Crystal NanolaserRoom Temperature CW Photonic Crystal NanolaserRoom Temperature CW Photonic Crystal Nanolaser
High Performance PC Nanolasers
RT, CW Lasing
Effective Pump Power Peff [μW]
Irradiated Power Pirr [μW]
Inte
nsity [
a.u
.]
Inte
nsity [
10
dB
/div
]
Wavelength [μm]1.57 1.631.60
Peff ~ 2.3 μW
40dB
0 50
0 1 2 3
(Nozaki, Kita and Baba, OE 15, 7506 (2007))
High Performance PC Nanolasers
RT, CW Lasing
Effective Pump Power Peff [μW]
Irradiated Power Pirr [μW]
Inte
nsity [
a.u
.]
Inte
nsity [
10
dB
/div
]
Wavelength [μm]1.57 1.631.60
Peff ~ 2.3 μW
40dB
0 50
0 1 2 3
(Nozaki, Kita and Baba, OE 15, 7506 (2007))
Single QD Lasing (LT)(Nomura et al., JSAP 31p-ZN-1 (2009))
1μm
Passive
Laser
WG
Active
Applications of Nanolaser
Light Source for Photonic IC
200 nm
PassiveActive
PC Slab
Air Clad.
Air Clad.
(Watanabe and Baba, OE 16, 2694 (2008))
Chemical and Bio-Sensing(Kita et al., OE 16, 8174 (2008); IPNRA, JMB3 (2009)) Cavity QED (Purcell enhancement, Rabi splitting,
single photon emission, quantum information)
1
0.1
0.3
0.2
0.7
0.5
Norm
aliz
ed Inte
nsity
0 1 2 3 4 5Time [ns]
Wafer
PC w/o cavity
Point-shiftnanocavity
@ = mode
RT, Pirr = 0.7Pth
(Baba et al. APL 85, 3989 (2004); Ota et al. APL 94, 033102 (2009))
Included in MEXT GCOE program operated by
YNU and collaborated with Univ. Oulu
Wavelength [nm]
No
rma
lize
d I
nte
nsity [
a.u
.]
1615 1625 1635
nenv
= 1.3061.315
1.3251.335
1.3451.355
5
4
3
2
1
0
< 26 pm
Wavelength [nm]
BSABinding
GlutaraldehydeModification
1586 1588 1590 1592
No
rma
lize
d I
nte
nsity [
a.u
.]
5
4
3
2
1
0
Micro-directionalcoupler with μmorder length
Micro-branchPhotonic crystalline defect waveguides
Point-defectmicrolaser
Micro-bend
High-Power Singlemode PC Bandedge Lasers
2D DFB PC allows over 30 W singlemode lasing
in large areas
Narrow beam profiles controllable by PC engineering
Ring shape FFP applicable to photon twizer and
tight focusing over the diffraction limit
(Noda et al., Science 293, 1123 (2001); Nature 441, 946 (2006); Science 319, 445 (2008); JSAP 31a-ZN-1 (2009))
Fabrication of 3D Photonic Crystals
Top Down Approach (Micromanipulation)(Aoki et al. Nat. Mat. 2, 117 (2003); Nat. Photon. 2, 688 (2008))
Bottom Up Approach (Lithographic Tech.)(Shoji et al. APL 76, 2668 (2000); Mizeikiz et al. OL 29, 2061 (2004))
Slow light inphotonic crystals
T. Baba, Nature Photonics 2, 465 (2008)
Si
Air
Si
Channel
(after Baba et al., EL 35, 654 (1999))
PC Line Defect Waveguide
(after Notomi et al., PRL 87, 253902 (2001))
Observation of slow light
1 μm
Wavelength [ m]
Gro
up Index n
g
1.550 1.555 1.560 1.5650
20
40
60
80
From F-Presonance
From modulationphase shift
1 μmL = 192 μm
Branch
Input
WG
Output
WG
ConfluenceCoupled Waveguide
2r1 = 0.24 0.26 μm
2r2 = 0.34 0.38 μm a = 0.46 μm
Photonic Crystal Coupled Waveguides (PCCW)
(Mori et al. OE 13, 9398 (2005); Kawasaki et al. OE 15, 10274 (2007))
Band shift in chirped structure
k k k0.29
0.30
a/2
c
0.3 0.4 0.5
Even
Odd
k [2 /a]
SlowLight
Lig
ht Lin
e
0 20 40 60 80 100Delay [ps]
Δτ [ps] = 3.2
2.3
2.1
2.2
3.3
3.3
3.4
4.1
2.2
2.3
3.0
3.26.4
4.7
5.24.5
4.1
3.5
2.3
P [mW], x [μm] = 7, 140
7, 151
6, 164
7, 169
31, 19
31, 26
35, 35
40, 37
12, 189
24, 171
37, 172
27, 163
27, 154
27, 151
37, 147
37, 144
38, 140
52, 140
58, 140
74 ps
No
rma
lize
d C
ross-C
orr
ela
tio
n I
nte
nsity [
a.u
.]
Δt
Δt
Inte
nsity
Inte
nsity
Δ
(Baba et al., OE 16, 9245 (2008);
Baba et al., Nature Photon. 2, 465 (2008);
Adachi et al., OSA SL, SWA1 (2009))
Δ
Δt
ΔT
Δt0 0
0 0
Slow chirp Fast chirp
Heating
Tunable Delay inSlow Light Pulse
Two Photon Absorption Self Phase Modulation
Optical Nonlinearity in LVLD Pulse
No Device
(Hamachi, Kubo, Baba, OL 34, 1072 (2009))
Nonlinearity is enhanced by SL pulse in LVLD waveguide (350 m length)
TPA scales with ng2 and >40-fold higher than Si photonic wire waveguide
eff [cm/GW] =3
0
10
25
50
00
0.5 1.0 1.5 2.0Input Peak Intensity Pin [W]
Outp
ut P
eak Inte
nsity P
ou
t [W
]
0.5
1.0
ng ~ 30
ng ~ 30
ng ~ 8
ng ~ 8
1.890.750.300.12
Tra
nsm
issio
n [5 d
B/d
iv]
Wavelength λ [μm]
1.5511.551 1.554
Pin [W] =
1.551 1.554 1.554
PC Nanocavity-Waveguide Coupled System
Ultrahigh-Q Nanocavity (Tanabe et al. Nat. Photon. 1, 49 (2007); Takahashi et al. OE 15, 17206 (2007))
Nonlinear bistable switching(Notomi et al. OE 13, 2678 (2005); OL 30, 2575 (2005)) Dynamic Tuning
(Tanaka et al. Nat. Mat. , 862 (2007))
Q factor up to 3,000,000 and photon storage of 2 ns
Carrier-induced bistability, τ=100ps, Wth=10fJ Stopping optical pulse observed
Negative Refraction inPhotonic Crystals
Negative Refraction inPhotonic Crystals
Functions Predicted from Dispersion Surfaces
(after Kosaka et al., PRB 58, 10096 (1998))
0.6
0.56
0.64
0.82
0.80.74
0.760.72
0.70.7
0.72
0.74
1 2 3
4 5 6
0.1
0.2
0.55
0.54
0.53
Isotropic Propagation
Superprism
Superlens
Slowlight
Super-Collimation
Observation of Negative Refraction
(Matsumoto et al., APL 91, 091117 (2007))
10 μm
De
fle
ctio
n A
ng
le θ
[º]
Wavelength λ [μm]
45
50
55
60
65
Plot: Experiment, Line: FDTD
1.50 1.601.55
2r =
0.3
0 μ
m
0.2
9 μ
m
0.2
7 μ
m
1 μm
24º
PC
Si Slab
InputWG
λ = 1.37 μm
PC
Si Slab
θ
1 μm
Light Focusing in PC Superlens
PC slab superlens
15
10
50
L [
m]
3 2 1 0
Position [ m]Inte
nsity [
a.u
.]
0
1
-10 0 10
2.0 m
(Matsumoto, et al. OL 31, 2776 (2006))
0.5 μm
= 1.305 μm
Intensity [a.u.]
Photonic Nanostructures
High Index Contrast Structure: HIC
n1
n0
n1
n0
Total reflection
Bragg reflection Bragg scattering
2D
Wire Disk Mesa
3D1D
1 m
Brillouinzone
X
X
UW
L
K
Γ
X
X
JΓ
1μm
1μm
1μm
Photonic Crystals: PC
0.2 μm
Photonic Wire Waveguide Elements
(Sakai et al. JJAP 40, L383 (2001)) (Yamada et al. IEEE JSTQE 12, 1371 (2006))
SEM NFP
(Sakai et al. IEICE Trans.E85-C, 1033 (2002); JJAP 41, L1461 (2002))
Y Branch and H-TreeBend
NFP = 1.55 m
(Fukazawa et al. JJAP 43, 646 (2004))
10.4 μm
1.6 μm
0.4 dB
30 dB
Intersection
MMI Coupler
MZ Interferometer
N = 50L = 17.2 m
5 m
(Ohno et al., JJAP 44, 5322 (2005))
Directional Coupler(Yamada et al., IEEE PTL 18, 585 (2005))
(Tsuchizawa et al. EL 38, 1669 (2002))
Spot Size Converter10 m = 1.55 m
(Xiao et al., JLT 26, 228 (2008))
Microring
(Bogaerts et al. OE 12, 1583 (2004))Grating Coupler
(Yamada et al. IEICE Trans.E87-C, 351 (2004))
Si Photonics Functional Devices
MUX/DEMUX (AWG)
10 μm1.50 1.55
Wavelength [μm]
Tra
nsm
issio
n [dB
]
10
20
30
0
1.60
(Fukazawa et al., JJAP 43, L673 (2004); JJAP 45, 6126 (2006))
(Liu et al. APL 87, 011110 (2005))
Epitaxial Ge Detector(Fang et al., OE 14, 9203 (2006))
III-V Hybrid Laser
20 GHz bandwidth
(Yamada et al., IEEE PTL 18, 1046 (2006))
Nonlinear Elements(FWM, Raman, TPA, SPM...)
Modulator
10 Gbps
Eye Pattern
(Liao et al., OE 13, 3129 (2005))
Delay Line and Optical Buffer (Xia et al., Nature Photon. 1, 65 (2007))
Open Foundry Now Available
Sept. ’08 May ’08 Sept. ’08 (pre. ’06-)
e-beam100 kV photo. 248 nm photo. 193 nm
WG width > 80 nm > 170 nm > 120 nm
fIber coupling facet with SSC
(< 2.5 dB/facet)
facet with SSC
(< 2.5 dB/facet)
facet with SSC,
grating coupler
(< 5.2 dB/facet)
NTT-ATN
(Japan)
JSPS Center of Si Photonics Prog.
Japan: U.Tokyo, Yokohama U., etc.
USA: MIT, Rochester, etc.
Europe: IMEC etc.
Test suttle run by NTT-ATN
8000 USD / 2 chips, 6 dB loss inc. lens coupling
started from
lithography
? available availablelithography
Silicon Photonics
MPW Prototyping/IME
(Singapole)
ePIXfab / IMEC
(Bergium)
Air SSC
PC Nanolaser
PC Negative refractive opticsFocusing, image formation, beam steering, collimating Compensation of aberration possible
HIC Silicon photonics deviceμ-components based on Si photonic wire waveguide Functional devices, applications to opt. interconnectsFoundry service now available
Topics
PC Slowlight waveguideWideband dispersion-free slow light pulse availableTunable delay available by TO effectDynamic control expected for more delay
Ultralow threshold RT CW lasing and Purcell effectA/P integation for photonic integrated chipHight resolution sensing available