Photodiodes • APDs • Photoreceivers • LRF Receivers Electro-Optical Instruments 2015CATALOG V.5
P h o t o d i o d e s • A P D s • P h o t o r e c e i v e r s • L R F R e c e i v e r s
E l e c t r o - O p t i c a l I n s t r u m e n t s
2 0 1 5 C A T A L O G V.5
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Voxtel is at the forefront of technology for high-sensitivity infrared sensing. Our products are providing our customers with improved solutions for a variety of commercial, scientific, and military sensing applications, and are providing the performance to make new applications possible.
The company was founded in 1999 with a strong focus on innovation and on bringing advanced electo-optics technologies to market, quickly and efficiently. We anticipate and translate application needs into innovative and cost-effective solutions, which we deliver to the market on time and with exceptional quality, allowing both Voxtel and our channel partners an optimal return on investment and rate of growth.
©2015 Voxtel, Inc.
Voxtel Headquarters:
15985 NW Schendel Ave. #200
Beaverton, OR 97006
LEGAL DISCLAIMER
Information in this catalog is subject to change without notice. It may contain technical inaccuracies or typographical errors.
Voxtel, Inc. may make improvements and/or changes in the products described in this information at any time, without notice.
Voxtel, Inc. reserves the right to dicontinue or change product specifications and prices without prior notice. Inadvertent errors
in advertised prices are not binding on Voxtel, Inc.
INFORMATION IN THIS CATALOG IS PROVIDED “AS IS” WITHOUT WARRANTY OF ANY KIND, EITHER EXPRESS OR IMPLIED, INCLUDING,
BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR APPLICATION,
OR NON-INFRINGEMENT.
Voxtel strives to be the industry’s first-choice solution for
electro-optical devices, subsystems, and instrumentation.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Contents
APD Product Guide 4
Voxtel APDs 7
Introduction 7
Product Series 7
Responsivity vs. Noise 9
Comparison Table 10
APD Product Listings 13
APD Die and Submounts 13
Packaged APDs 22
APD Photoreceivers 36
APD Receiver Support Electronics Modules 51
APD Laser Rangefinder Receivers 52
APD Laser Rangefinders 56
References 63
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Product Guide
APD Die Packaged APDsPart # Description Page # Part # Description Page #
Deschutes FSI™
Bare APD die APD in hermetic TO-46 can
VFI1-DAZA 25-µm dia. 13 VFI1-DCAA 25-µm dia. 23
VFI1-JAZA 75-µm dia. 14 VFI1-JCAA 75-µm dia. 24
VFI1-NAZA 200-µm dia. 15 VFI1-NCAA 200-µm dia. 25
APD with 3-stage TEC in hermetic TO-8 can
VFI1-JKAB 75-µm dia. 26
VFI1-NKAB 200-µm dia. 27
Deschutes BSI™
APD Die on submount APD in hermetic TO-46 can
VFC1-EBZA 30-µm dia. 16 VFC1-JCAA 75-µm dia. 28
VFC1-JBZA 75-µm dia. 17 VFC1-NCAA 200-µm dia. 29
VFC1-NBZA 200-µm dia. 18 APD with 3-stage TEC in hermetic TO-8 can
VFC1-JKAB 75-µm dia. 30
VFC1-NKAB 200-µm dia. 31
Siletz™
APD Die on submount APD in hermetic TO-46 can
VFP1-EBZA 30-µm dia. 19 VFP1-JCAA 75-µm dia. 32
VFP1-JBZA 75-µm dia. 20 VFP1-NCAA 200-µm dia. 33
VFP1-NBZA 200-µm dia. 21 APD with 3-stage TEC in hermetic TO-8 can
VFP1-JKAB 75-µm dia. 34
VFP1-NKAB 200-µm dia. 35
Notes on APD Die and PackagesDeschutes BSI™ and Siletz™ APDs are backside-illuminated devices that are provided on flip-chip submounts, ready for wirebonding.
Packaged APDs are available standard with AR coating, and are optionally available with a variety of coatings and lenses, as well as fiber coupling options for the Deschutes BSI™ and Siletz™ series. We look forward to your inquiries on custom orders.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Product Guide
APD PhotoreceiversPart # Bandwidth Description Page #
Deschutes FSI™
Window-coupled Receivers in hermetic TO-8 can
RDI1-NJAF 200 MHz 200-µm dia. APD 38
RDI1-JJAF 580 MHz 75-µm dia. APD 39
Deschutes BSI™
Window-coupled Receivers in hermetic TO-8 can
RYC1-NJAF 200 MHz 200-µm dia. APD 40
RDC1-NJAF 300 MHz 200-µm dia. APD 41
RIC1-JJAF 2 GHz 75 µm dia. APD 43
Fiber-coupled Receivers, TO-8 package
RIC1-JJQF 2 GHz 62.5/125 µm FO, others available 44
Siletz™
Window-coupled Receivers in hermetic TO-8 can
RIP1-NJAF 1 GHz 200-µm dia. APD 45
RIP1-JJAF 2.1 GHz 75-µm dia. APD 46
Fiber-coupled Receivers, TO-8 package
RIP1-JJQF 2.1 GHz 62.5/125 µm FO, others available 47
Ball-lens-coupled Receivers, TO-46 package
R2P1-JCAF 1.5 GHz 300-µm dia. (effective) APD 48
Notes on PhotoreceiversA variety of custom options and optical fiber connections are available, and we continue to add standard products to our photoreceiver lines. We look forward to your inquiries on custom orders and new products.
Many customers who order our photoreceivers use our APD Receiver Support Modules for fast and easy inte-gration into their laboratory tests and product prototypes. See page 51 for more information on our support modules.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Product Guide
APD Laser Rangefinder ReceiversPart # Bandwidth Description Page #
ROX™ Rx Series
Window-coupled Receivers in hermetic TO-8 can
RVC1-JIAC 100 MHz LRF Receiver w/ 75-μm Deschutes BSI R-APD 54
RVC1-NIAC 100 MHz LRF Receiver w/ 200-μm Deschutes BSI R-APD 55
Notes on Laser Rangefinder (LRF) ReceiversROX™ performance allows system cost advantages by reducing laser power requirements, which also reduces system size, weight, and power.
The ROX Rx series of high-sensitivity LRF receivers (Rx) integrates Voxtel’s high-performance APDs, custom-designed CMOS application specific integrated circuits (ASICs), and processing circuits to provide flexible system integration and reliable performance, all in a small TO-8 package. We look forward to your inquiries on custom orders.
APD Laser RangefindersPart # Bandwidth Description Page #
ROX™ OEM Series
Window-coupled Receivers in hermetic TO-8 can
EVKE-NABC 100 µJ Eye-safe LRF device w/ 200-µm Deschutes BSI R-APD 57
ROX™ µLRF Series
Window-coupled Receivers in hermetic TO-8 can
FVKE-NCBC 100 µJ, 3 km Eye-safe LRF module w/ 200-μm Deschutes BSI R-APD 61
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Voxtel APDs — Introduction to Avalanche Photodiodes
Voxtel’s avalanche photodiodes (APDs) offer superior response and linear-mode, low-light-level detection capabilities that conventional telecommunications APDs and Geiger-mode APDs can’t offer.
Customers with applications that are presently served by NIR photodiodes or low-gain telecom APDs will often prefer the Deschutes FSI™ or Deschutes BSI™ APDs and photoreceivers for their modest price and low-noise performance at gains up to M = 25. A variety of high-performance and low-light-level applications are best served by our Siletz™ line of high-gain, high-responsivity products.
Voxtel’s single-element devices are available as bare die, on submounts (for our backside-illuminated prod-ucts), in hermetic packages, and integrated into photoreceivers, with a variety of options for packaging and optical input.
Voxtel’s APD Product Series
Silicon vs Voxtel’s InGaAs APDs
Voxtel produces a number of high-performance InGaAs APDs, and each is best suited for a particular range of applications. This guide discusses the differences between Voxtel’s products and related products for NIR detection, as well as the differences among Voxtel’s product lines.
Voxtel’s APDs are replacing silicon APDs in many applications. Silicon APDs are typically used for the 300–1100 nm spectral band, while InGaAs APDs normally cover the 900–1700 nm band. Their response overlaps in the 900–1100 nm spectral region, which includes the ubiquitous 1064 nm Nd:YAG solid-state laser line that is used in many systems for range finding and target designation.
Voxtel’s InGaAs APDs are often an attractive alternative to silicon APDs in designing new systems where a fast signal rise time is required, and have served many users of silicon APDs in migrating to eye-safe systems at e.g. 1550 nm while maintaining backwards compatibility with legacy 1064 nm illuminators. However, the detector specifications can be considerably different for the two types of APDs, so depending on the application, it may not be feasible to use an InGaAs APD as a drop-in-replacement for legacy systems using a silicon APD.
Voxtel’s InGaAs APDs are often the best choice for low-light-level and/or high-bandwidth applications, though understanding the differences between our detectors is important in order to choose the right Voxtel APD for a particular application.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Choosing a Voxtel APD: Three product lines
Excess Noise Comparisons
Initial considerations: FSI vs. BSI spectral response and mechanical differences
Voxtel sells three InGaAs APD product lines: the Deschutes FSI™, Deschutes BSI™, and Siletz™ series. The Deschutes FSI™ series of APDs are front-side-illuminated (FSI), while the Deschutes BSI™, and Siletz™ series APDs are back-side-illuminated (BSI). The most important difference between FSI and BSI configuration is that the FSI APDs are able to absorb wavelengths below 950 nm, but for applications at 950 nm and above, the BSI APDs offer higher spectral responsivity and lower detector capacitance.
Voxtel’s BSI APDs are supplied on flip-chip ceramic submounts, ready for wire bonding. The submount increases footprint and height, but also reduces parasitic capacitance between the BSI APD’s submount bond pads relative to the bond pads situated directly on an FSI APD. Also, all of Voxtel’s fiber-coupled assemblies are designed for use with our BSI APDs.
For these reasons, our Deschutes FSI™ line is preferred by customers who require spectral response superior to silicon in the ~800–950 nm range, or who require our smallest APD.
1 10 100 1000
10
20
30
1
Gain (M)
Exce
ss N
oise
Fac
tor (F)
Competitor’s APDVoxtel Deschutes FSI™
Voxtel Deschutes BSI™
Voxtel Siletz™Voxtel Siletz UHG™
k = 0.40 k = 0.20 k = 0.02
k = 0
Measured excess noise factor vs. gain for Voxtel’s APDs and competitor’s APD (log scales), including McIntyre excess noise factor model for various impact ionization ratios k.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Responsivity vs noise in high-performance applications: Deschutes BSI™ vs Siletz™
The Deschutes BSI™ and Siletz™ lines are preferred for applications requiring the highest possible sensitivity for high-speed, low-light level applications that cannot be served by PIN photodiodes or Geiger APDs. These high-gain-bandwidth products address a balance of tradeoffs for engineering NIR systems in high-speed, weak-signal regimes that include cutting-edge applications in 3D imaging (including eye-safe LIDAR), long-range optical communications, and science-grade NIR detection.
The choice of a Deschutes™ or Siletz™ APD depends on the other noise sources in the planned receiver system. The Deschutes BSI™ line offers a high-quality APD with superior response relative to competing commercial InGaAs APDs, as well as performance superior to InGaAs PIN photodiodes in most conditions. Siletz™ APD products offer superior avalanche gain and low excess noise factors, with the tradeoff of higher dark current.
These products are the most effective in high-performance applications where higher system noise is unavoid-able; in these conditions, high gain is needed and the APD’s additional noise contribution is less important. Because faster systems typically require the use of noisier amplifiers, the Siletz™ APD is optimal for high-bandwidth NIR sensing.
System noise vs. transimpedance amplifier (TIA) noise and photodetector selection. Calculated noise levels and approximate TIA noise regimes in which each product type is most sensitive. Noise levels and rated low-capacitance speeds* of a few commercial TIAs are marked on the x-axis to illustrate the tradeoff between speed and amplifier noise. See also these Voxtel photoreceiver products:
*Combinations of these TIAs and Voxtel APDs may not operate at the full rated speed of the TIA, which is usually quoted for a PIN photodiode. In
particular, the higher capacitance of 200-µm APDs reduces receiver speed considerably.
Siletz™ RIP1-NJAF, 1 GHz p 45
Siletz™ RIP1-JJAF, -JJQF, 2 1 GHz pp 46, 47
Deschutes BSI™ RYC1-NJAF, 200 MHz p 40
Deschutes BSI™ RDC1-NJAF, 300 MHz p 41
Deschutes BSI™ RIC1-JJAF, -JJQF, 2 GHz pp 43, 44
TIA Noise [pA/Hz1/2]
Noi
se E
quiv
alen
t Pow
er [f
W/H
z1/2 ]
0.001 0.01 0.1 1 10
100
10
1
75-µmSiletz™Deschutes BSI™PIN
165 MHz580 MHz
1 GHz 2.7 GHz1.7 GHz
TIA Noise [pA/Hz1/2]
Noi
se E
quiv
alen
t Pow
er [f
W/H
z1/2 ]
0.001 0.01 0.1 1 10
100
10
1
200-µmDeschutes BSI™ Siletz™PIN
165 MHz580 MHz
1 GHz 2.7 GHz1.7 GHz
Voxtel’s APD Product Series
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Voxtel’s APD Product Series — Comparison Table
Deschutes FSI™
Deschutes BSI™ Siletz™
Spectral Range, λ
Min suggested <800 nm 950 nm 950 nm
Typical range800 to
1550 nm1064 to 1550 nm 1064 to 1550 nm
Max suggested 1750 nm 1700 nm 1700 nm
Operating Gain, M
Minimum 1 1 1
Typical range 5–20 5–20 5–40
Maximum 20 20 50
Responsivity at M = 10, [A/W]
λ = 1550 nm 7.2 10.1 10.1
λ = 1064 nm 6.8 7.3 7.3
Excess Noise Factor, F(M, k)
keffective [A] ~0.2 ~0.2 ~0.02
M = 10 3.4 3.4 2.0
M = 15 4.3 4.3 2.2
M = 20 5.2 5.2 2.3
M = 50 — — 3
M = 1000 — — —
Dark Current at M = 1 of 75-µm APD, [nA] 0.56 [B] 1.9 [B] 23.4 [B]
Capacitance of 75-µm APD, [fF] 450 540 350
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10
The following table provides typical specifications for Voxtel’s three series of APD products, to aid you in choosing the series that may best fit your needs. More information can be found on the following pages, and in the listings for individual products; see the Product Guide on pages 4 and 5.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Spectral Response Comparisons
Deschutes FSI™ Deschutes BSI™, Siletz™
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
800 1000 1200 1400 1600 1800
Wavelength [nm]
Resp
onsi
vity
[A/W
]
0.0
0.2
0.4
0.6
0.8
1.0
900 1100 1300 1500 1700
Wavelength [nm]
Resp
onsi
vity
[A/W
],
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Backside-Illuminated APD Submount Layouts
APD Die and Submounts
Mechanical Information
Frontside-Illuminated APD Die Layouts
Deschutes FSI™ frontside-illuminated APDs are delivered as bare die. From left: 30-, 75-, and 200-µm APDs.
Backside-illuminated APDs are delivered on submounts. Left: Deschutes BSI™, Siletz™. Right: Siletz-UHG™) .
735 µm
860 µm
150 μm
APD
Anode
Cathode
25 μm
80 μ
m
175 μm 113 μm
350 μm
Ø 28 μm
Ø 75 μm
175
μm
350
μm
25 μ
m16
0 μm
25 μm
80 μ
m
175 μm 113 μm
350 μm
Ø 76 μm
Ø 75 μm
175
μm
350
μm
25 μ
m16
0 μm
25 μm
65 μm
65 μ
m
175 μm
350 μm
Ø 200 μm
Anode Ø 75 μm
175
μm
350
μm
25 μ
m
E EBC
1.52 mm
940 µm
Temp.Sense
150 μm
APD
100 μm
E EBC
Ano
de
Cath
ode
Cath
ode
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Deschutes FSI™ APD Die and Submounts
Deschutes FSI™ VFI1-DAZA 25 µm, 6-GHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 25 µm
Bandwidth 6 GHz
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.15 pA/Hz1/2
Dark Current [A] 2.2 2.6 nA
Dark Current Dependence on Temperature [B] 0.22 dB/K
Capacitance [C] 0.23 pF
Breakdown Voltage, VBR [D] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 298 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Die and Submounts Deschutes FSI™
Deschutes FSI™ VFI1-JAZA 75 µm, 2-GHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 75 µm
Bandwidth 2 GHz
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.25 pA/Hz1/2
Dark Current [A] 5.6 7 nA
Dark Current Dependence on Temperature [B] 0.24 dB/K
Capacitance [C] 0.45 pF
Breakdown Voltage, VBR [D] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Deschutes FSI™ APD Die and Submounts
Deschutes FSI™ VFI1-NAZA 200 µm, 200-MHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 200 µm
Bandwidth 200 MHz
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.47 pA/Hz1/2
Dark Current [A] 6 20 24 nA
Dark Current Dependence on Temperature [B] 0.19 dB/K
Capacitance [C] 4.2 pF
Breakdown Voltage, VBR [D] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Die and Submounts Deschutes BSI™
Deschutes BSI™ VFC1-EBZA 30 µm, 6-GHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 30 µm
Bandwidth 6 GHz
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.34 pA/Hz1/2
Dark Current [A] 8.0 10.8 12.5 nA
Dark Current Dependence on Temperature [B] 0.24 dB/K
Submounted Capacitance [C] 0.28 pF
Breakdown Voltage, VBR [D] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 3 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Deschutes BSI™ APD Die and Submounts
Deschutes BSI™ VFC1-JBZA 75 µm, 2.5-GHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Bandwidth 2.5 GHz
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.45 pA/Hz1/2
Dark Current [A] 5 19 24 nA
Dark Current Dependence on Temperature 0.24 dB/K
Submounted Capacitance [C] 0.35 0.54 0.57 pF
Breakdown Voltage, VBR [D] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 3 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Die and Submounts Deschutes BSI™
Deschutes BSI™ VFC1-NBZA 200 µm, 550-MHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Bandwidth 550 MHz
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.94 pA/Hz1/2
Dark Current [A] 60 81 96 nA
Dark Current Dependence on Temperature 0.24 dB/K
Submounted Capacitance [C] 2.2 pF
Breakdown Voltage, VBR [D] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Siletz™ APD Die and Submounts
Siletz™ VFP1-EBZA 30 µm, 2.3-GHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 30 µm
Bandwidth 2.3 GHz
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at M = 10 0.43 pA/Hz1/2
Dark Current at M = 1 [B] 6.6 nA
Dark Current Dependence on Temperature [C] 0.11 dB/K
Submounted Capacitance 60 fF
Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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APD Die and Submounts Siletz™
Siletz™ VFP1-JBZA 75 µm, 2.3-GHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Bandwidth 2.3 GHz
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at M = 10 0.80 pA/Hz1/2
Dark Current at M = 1 [B] 12 23.4 40 nA
Dark Current Dependence on Temperature [C] 0.11 dB/K
Submounted Capacitance 350 fF
Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
21
Siletz™ APD Die and Submounts
Siletz™ VFP1-NBZA 200 µm, 350-MHz Avalanche Photodiode
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Bandwidth 350 MHz
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at M = 10 2.13 pA/Hz1/2
Dark Current at M = 1 [B] 90 165 195 nA
Dark Current Dependence on Temperature [C] 0.11 dB/K
Submounted Capacitance 1.5 pF
Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
22
Packaged APDs
Mechanical Information
TO-46 Package
TO-8 Package
Pinout 1) TEC – 4) TEC + 9) Temp Sense – 10) Temp Sense + 11) APD Anode (P) 12) APD Cathode (N)
Ø 15.24
5.72
2.87
1.91
9.53
Ø 0.460.79
0.79 1 4
12 11 10 9
25.40 ± 0.64
9.91
7.16 mm
5.38
2.24 ± 0.31
APD Plane
Active area Ø 1.52
Pinout1) APD Cathode2) APD Anode3) Ground, T Sense –4) T Sense +
SIDE VIEWwith cap
TOP VIEWheader only
Ø .019Ø .016
Ø .171Ø .161
Ø .100
.700
.500
.043
.031
.045
.037
Ø .026Ø .020
.072 in183 mm
Ø .212Ø .209
Ø .048Ø .046.010
.007
.006
.000
45° ± 0.5°
.118
.114
.012
.009
.046
.042
.010 max.
1
2
3
4
Packaged APDs
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
23
Deschutes FSI™ Packaged APDs
Deschutes FSI™ VFI1-DCAA 25 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 25 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.15 pA/Hz1/2
Dark Current [A] 2.2 2.6 nA
Dark Current Dependence on Temperature [B] 0.22 dB/K
Total Capacitance [C] 0.52 pF
Bandwidth 6 GHz
Breakdown Voltage, VBR [D] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 298 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
24
Packaged APDs Deschutes FSI™
Deschutes FSI™ VFI1-JCAA 75 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 75 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.25 pA/Hz1/2
Dark Current [A] 5.6 7 nA
Dark Current Dependence on Temperature [B] 0.24 dB/K
Total Capacitance [C] 1.3 pF
Bandwidth 2 GHz
Breakdown Voltage, VBR [D] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
25
Deschutes FSI™ Packaged APDs
Deschutes FSI™ VFI1-NCAA 200 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 200 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.47 pA/Hz1/2
Dark Current [A] 6 20 24 nA
Dark Current Dependence on Temperature [B] 0.19 dB/K
Total Capacitance [C] 4.5 pF
Bandwidth 200 MHz
Breakdown Voltage, VBR [D] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
26
Packaged APDs Deschutes FSI™
Deschutes FSI™ VFI1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 75 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at 200 K [A] 16 fA/Hz1/2
Dark Current [B] 5.6 7 nA
Dark Current Dependence on Temperature [C] 0.24 dB/K
Total Capacitance [D] 1.4 pF
Bandwidth 2 GHz
Rated Package Temperature [E] 218 K
TEC Maximum Heat Transfer, Qmax [F] 0.4 W
TEC Maximum Cooling, ΔTmax 110 K
TEC Maximum Current, Imax 1.4 A
TEC Maximum Voltage, Vmax 1.9 V
Breakdown Voltage, VBR [G] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10 [B] M = 10, T = 298 K [C] 250 K < T < 300 K [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
27
Deschutes FSI™ Packaged APDs
Deschutes FSI™ VFI1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 200 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 7.0 7.2 8.0
A/Wλ = 1064 nm 6.0 6.8 7.7
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at 200 K [A] 55 fA/Hz1/2
Dark Current [B] 6 20 24 nA
Dark Current Dependence on Temperature [C] 0.19 dB/K
Total Capacitance [D] 4.9 pF
Bandwidth 200 MHz
Rated Package Temperature [E] 218 K
TEC Maximum Heat Transfer, Qmax [F] 0.4 W
TEC Maximum Cooling, ΔTmax 110 K
TEC Maximum Current, Imax 1.4 A
TEC Maximum Voltage, Vmax 1.9 V
Breakdown Voltage, VBR [G] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
Absolute Reverse Current 3 mA
Absolute Forward Current 5 mA
Absolute Operating Temperature−200
73
0–30
273–303
52
325
°C
K
[A] M = 10 [B] M = 10, T = 298 K [C] 250 K < T < 300 K [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
28
Packaged APDs Deschutes BSI™
Deschutes BSI™ VFC1-JCAA 75 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.45 pA/Hz1/2
Dark Current [A] 5 19 24 nA
Dark Current Dependence on Temperature [B] 0.24 dB/K
Total Capacitance [C] 0.76 pF
Bandwidth 2.5 GHz
Breakdown Voltage, VBR [D] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 3 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
29
Deschutes BSI™ Packaged APDs
Deschutes BSI™ VFC1-NCAA 200 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at M = 10 0.94 pA/Hz1/2
Dark Current [A] 60 81 96 nA
Dark Current Dependence on Temperature [B] 0.24 dB/K
Total Capacitance [C] 2.45 pF
Bandwidth 550 MHz
Breakdown Voltage, VBR [D] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 3 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10, T = 298 K [B] 250 K < T < 300 K [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
30
Packaged APDs Deschutes BSI™
Deschutes BSI™ VFC1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at 200 K [A] 30 fA/Hz1/2
Dark Current [B] 5 19 24 nA
Dark Current Dependence on Temperature [C] 0.24 dB/K
Total Capacitance [D] 0.76 pF
Bandwidth 2.5 GHz
Rated Package Temperature [E] 218 K
TEC Maximum Heat Transfer, Qmax [F] 0.4 W
TEC Maximum Cooling, ΔTmax 110 K
TEC Maximum Current, Imax 1.4 A
TEC Maximum Voltage, Vmax 1.9 V
Breakdown Voltage, VBR [G] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 3 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10 [B] M = 10, T = 298 K [C] 250 K < T < 300 K [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
31
Deschutes BSI™ Packaged APDs
Deschutes BSI™ VFC1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Operating Gain, M 1 15 20
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Spectral Density at 200 K [A] 63 fA/Hz1/2
Dark Current [B] 60 81 96 nA
Dark Current Dependence on Temperature [C] 0.24 dB/K
Total Capacitance [D] 2.45 pF
Bandwidth 550 MHz
Rated Package Temperature [E] 218 K
TEC Maximum Heat Transfer, Qmax [F] 0.4 W
TEC Maximum Cooling, ΔTmax 110 K
TEC Maximum Current, Imax 1.4 A
TEC Maximum Voltage, Vmax 1.9 V
Breakdown Voltage, VBR [G] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
Absolute Optical Input 5 dBm
Absolute Reverse Current 3 mA
Absolute Forward Current 3 mA
Absolute Operating Temperature−75
198
0–30
273–303
75
348
°C
K
[A] M = 10 [B] M = 10, T = 298 K [C] 250 K < T < 300 K [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
32
Packaged APDs Siletz™
Siletz™ VFP1-JCAA 75 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at M = 10 0.80 pA/Hz1/2
Dark Current at M = 1 [B] 12 23.4 40 nA
Dark Current Dependence on Temperature [C] 0.11 dB/K
Total Capacitance [D] 0.62 pF
Bandwidth 2.3 GHz
Breakdown Voltage, VBR [E] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] 250 K < T < 300 K [D] M > 3 [E] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
33
Siletz™ Packaged APDs
Siletz™ VFP1-NCAA 200 µm APD in hermetic TO-46 can
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at M = 10 2.13 pA/Hz1/2
Dark Current at M = 1 [B] 90 165 195 nA
Total Capacitance [C] 1.86 pF
Bandwidth 350 MHz
Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [C] M > 3 [D] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
34
Packaged APDs Siletz™
Siletz™ VFP1-JKAB 75 µm APD in hermetic TO-8 can with 3-stage TEC
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at 200 K [B] 227 fA/Hz1/2
Dark Current at M = 1 [C] 12 23.4 40 nA
Total Capacitance [D] 0.62 pF
Bandwidth 2.3 GHz
Rated Package Temperature [E] 218 K
TEC Maximum Heat Transfer, Qmax [F] 0.4 W
TEC Maximum Cooling, ΔTmax 110 K
TEC Maximum Current, Imax 1.4 A
TEC Maximum Voltage, Vmax 1.9 V
Breakdown Voltage, VBR [G] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] M = 10 [C] Referenced from M = 10 [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
35
Siletz™ Packaged APDs
Siletz™ VFP1-NKAB 200 µm APD in hermetic TO-8 can with 3-stage TEC
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Operating Gain, M 1 5–40 50
Responsivity at M = 10λ = 1550 nm 9.1 10.1 10.4
A/Wλ = 1064 nm 6.6 7.3 7.8
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Spectral Density at 200 K [B] 603 fA/Hz1/2
Dark Current at M = 1 [C] 90 165 195 nA
Total Capacitance [D] 1.86 pF
Bandwidth 350 MHz
Rated Package Temperature [E] 218 K
TEC Maximum Heat Transfer, Qmax [F] 0.4 W
TEC Maximum Cooling, ΔTmax 110 K
TEC Maximum Current, Imax 1.4 A
TEC Maximum Voltage, Vmax 1.9 V
Breakdown Voltage, VBR [G] 70 74 80 V
ΔVBR/ΔT 29 mV/K
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] M = 10 [C] Referenced from M = 10 [D] M > 3 [E] Guaranteed minimum; colder operation may be possible with caution [F] All TEC data @ T = 300 K [G] T = 294 K; Idark > 0 1 mA
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
36
APD Photoreceivers
Voxtel’s line of APD photoreceivers achieve industry-leading sensitivity with bandwidth ranging from the MHz to GHz scales. These receivers are hermetically sealed in TO-8 and TO-46 packages, and integrate a Voxtel APD with a transimpedance amplifier (TIA) to provide wideband, low-noise preamplification of signal current from the APD. The APD and TIA are integrated on a ceramic submount, lowering parasitic capacitance and thereby maximizing bandwidth and minimizing noise.
The receivers integrate a calibrated temperature sensor, capacitive decoupling, separate package and cir-cuit grounding, and include differential output to allow users easy integration into their system electronics. Photoreceivers in TO-8 packages can also include thermoelectric cooling to stabilize the APD gain over the range of application environments.
Typical Voxtel Photoreceiver
Typical Block Diagram
TSense+ (B/C)
TSense– (E)
VCC +3.3V
TEC–
TEC++APD
Gnd
Gnd
N/C
Out+
Out–
N/C
TSense
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
37
APD Photoreceivers: Mechanical InformationTO-8 Package, Rev. C
TO-8 Package, Rev. F
Fiber Optic Package, Rev. C
Ø 15.25 mm
10.16 mm
Ø 0.45 mm
Ø 1.50 mm
1) Gnd
2) +APD
3) TEC–
4) TSense–
5) TEC+
6) TSense+
Pinout (from boom)
7) Out–
8) Gnd
9) Out+
10) VCC +3.3V
11) N/C
12) N/C
0.80 mm
5.08
mm
2.54
mm
0.80 mm
1 2 3
122.09 mm Acve area4.06 mm
0.38 mm
SIDE VIEWwith cap
BOTTOM VIEW
1 2 3
12
10.16 mm
Ø 15.25 mm
Ø 0.45 mm
Ø 1.50 mm
0.80 mm
5.08
mm
2.54
mm
0.80 mm
Ø 16.50 mm
Ø 8.00 mm
11.30 mm 7.00 mm 1000 mm
0.70 mm
6.35 mm
Ø 3.81 mm
Ø 16.50 mm
BOTTOM VIEW TOP VIEWSIDE VIEW
See also page 49.
2.39 ±0.15mm
6.65 ±0.14mm
0.38 ±0.03mm
6.35 mm
Ø 15.25 mm
10.16 mm
Ø 0.45 mm
Ø 1.50 mm
1) Gnd2) +APD3) TEC+4) TSense–5) TEC–6) TSense+
7) Out–8) Gnd9) Out+10) VCC +3.3V11) N/C12) N/C
0.80 mm
5.08
mm
2.54
mm
0.80 mm
1 2 312
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
38
APD Photoreceivers Deschutes FSI™
Deschutes FSI™ RDI1-NJAF 200 µm, 200-MHz Photoreceiver
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 200 µm
Bandwidth 200 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M = 10
λ = 1550 nm 132kV/W
λ = 1064 nm 125
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Equivalent Power at M = 20
λ = 1550 nm 3.1nW
λ = 1064 nm 3.3
APD Dark Current at M = 10 6 20 24 nA
Low-Frequency Cutoff [A] 30 kHz
APD Breakdown Voltage, VBR [B] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
TEC Power 0.8 A @ 2.2 V
TEC Cooling, ΔTmax 43 K
TIA Power 20 mA @ 3.3 V
Thermal Load 66 mW
Output Impedance [C] 60 75 90 Ω
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] −3 dB, 1 µA input [B] T = 295 K [C] Single-ended; 150 Ω differential
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
39
Deschutes FSI™ APD Photoreceivers
Deschutes FSI™ RDI1-JJAF 75 µm, 580-MHz Photoreceiver
Min Typical Max Units
Spectral Range, λ 800 1064–1550 1750 nm
Active Diameter 75 µm
Bandwidth 580 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M = 10
λ = 1550 nm 132kV/W
λ = 1064 nm 125
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Equivalent Power at M = 20
λ = 1550 nm 3.1nW
λ = 1064 nm 3.3
APD Dark Current at M = 10 5.6 7 nA
Low-Frequency Cutoff [A] 30 kHz
APD Breakdown Voltage, VBR [B] 30 37 40 V
ΔVBR/ΔT 15 17 19 mV/K
TEC Power 0.8 A @ 2.2 V
TEC Cooling, ΔTmax 43 K
TIA Power 20 mA @ 3.3 V
Thermal Load 66 mW
Output Impedance [D] 60 75 90 Ω
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] −3 dB, 1 µA input [B] T = 295 K [C] Single-ended; 150 Ω differential
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
40
APD Photoreceivers Deschutes BSI™
Deschutes BSI™ RYC1-NJAF 200 µm, 200-MHz Photoreceiver
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Bandwidth 200 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M = 20
λ = 1550 nm 372kV/W
λ = 1064 nm 228
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Equivalent Power at M = 20
λ = 1550 nm 1.8nW
λ = 1064 nm 2.3
APD Dark Current at M = 10 60 81 96 nA
Low-Frequency Cutoff [A] 30 kHz
APD Breakdown Voltage, VBR [B] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
TEC Power 0.8 A @ 2.2 V
TEC Cooling, ΔTmax 43 K
TIA Power 20 mA @ 3.3 V
Thermal Load 66 mW
Output Impedance [D] 60 75 90 Ω
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
Temperature Sensor Sensitivity 2.18 mV/K
[A] −3 dB, 1 µA input [C] at T = 298 K [B] T = 295 K [D] Single-ended; 150 Ω differential
See also page 42.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
41
Deschutes BSI™ APD Photoreceivers
Deschutes BSI™ RDC1-NJAF 200 µm, 300-MHz Photoreceiver
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Bandwidth 300 MHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M = 20
λ = 1550 nm 372kV/W
λ = 1064 nm 228
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Equivalent Power at M = 20
λ = 1550 nm 3.2nW
λ = 1064 nm 4.1
APD Dark Current at M = 10 60 81 96 nA
Low-Frequency Cutoff [A] 30 kHz
APD Breakdown Voltage, VBR [B] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
TEC Power 0.8 A @ 2.2 V
TEC Cooling, ΔTmax 43 K
TIA Power 20 mA @ 3.3 V
Thermal Load 66 mW
Output Impedance [D] 60 75 90 Ω
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
Temperature Sensor Sensitivity 2.18 mV/K
[A] −3 dB, 1 µA input [C] at T = 298 K [B] T = 295 K [D] Single-ended; 150 Ω differential
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
42
APD Photoreceivers Deschutes BSI™
Deschutes BSI™ RYC1-NJAF
Deschutes BSI™ RDC1-NJAF
250
200
150
100
50
0
0.1 0.30.2 0.5 1 32
Signal Power [µW]
Resp
onsi
vity
[kV/
W] Avg.
95%90%
Avg.95%90%M=10
M=20
Linearity of Response
Linearity of response in the RYC1-NJAF receiver; applies also to RDC1-NJAF. 20-MHz modulated signal, 1064 nm.
20 25 30 35 40 45 50
100
10
1
Light + Dark Current
Dark Current
Avalanche Gain
Reverse Bias [V]
Out
put C
urre
nt [A
]
Gai
n
10–5
10–6
10–7
10–8
10–9
10–10
278 K293 K
Output and Gain: RDC1-NJAC 300-MHz
Output current and gain vs. bias for cooled and uncooled photoreceivers at ~100 nW light power.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
43
Deschutes BSI™ APD Photoreceivers
Deschutes BSI™ RIC1-JJAF 75 µm, 2-GHz Photoreceiver
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Bandwidth 2 GHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M = 20
λ = 1550 nm 66kV/W
λ = 1064 nm 41
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Equivalent Power at M = 20
λ = 1550 nm 13.6nW
λ = 1064 nm 18.8
APD Dark Current at M = 10 5 19 24 nA
Low-Frequency Cutoff [A] 65 kHz
APD Breakdown Voltage, VBR [B] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
TEC Power 0.8 A @ 2.2 V
TIA Power 25 mA @ 3.3 V
Thermal Load 83 mW
Output Impedance [C] 42.5 50 57.5 Ω
Data Output Swing 220 300 500 mVP–P
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] −3 dB, 40 µA input [C] Single-ended; 100 Ω differential [B] T = 295 K
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
44
APD Photoreceivers Deschutes BSI™
Deschutes BSI™ RIC1-JJQF 75 µm, 2-GHz Photoreceiver
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
MM Fiber-Optic Connection Multimode 62.5/125, FC connector [A] µm
Bandwidth 2 GHz
APD Operating Gain, M 1 15 20
Receiver Responsivity at M = 20
λ = 1550 nm 66kV/W
λ = 1064 nm 41
Excess Noise Factor, F(M, k)
M = 5 2.1
M = 10 3.4
M = 15 4.3
Noise Equivalent Power at M = 20
λ = 1550 nm 13.6nW
λ = 1064 nm 18.8
APD Dark Current at M = 10 5 19 24 nA
Low-Frequency Cutoff [B] 65 kHz
APD Breakdown Voltage, VBR [C] 45 50 55 V
ΔVBR/ΔT 34 37 40 mV/K
TEC Power 0.8 A @ 2.2 V
TIA Power 25 mA @ 3.3 V
Thermal Load 83 mW
Output Impedance [D] 42.5 50 57.5 Ω
Data Output Swing 220 300 500 mVP–P
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] Other sizes/connectors available [B] −3 dB, 40 µA input [C] T = 295 K [D] Single-ended; 100 Ω differential
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
45
Siletz™ APD Photoreceivers
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 200 µm
Bandwidth 1 GHz
APD Operating Gain, M 1 5–40 50
Receiver Responsivity at M = 40
λ = 1550 nm 133kV/W
λ = 1064 nm 96
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Equivalent Power at M = 40
λ = 1550 nm 12.1nW
λ = 1064 nm 15.4
APD Dark Current at M = 1 [B] 90 165 195 nA
Low-Frequency Cutoff [C] 65 kHz
APD Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
TEC Power 0.8 A @ 2.2 V
TIA Power 25 mA @ 3.3 V
Thermal Load 83 mW
Output Impedance [E] 42.5 50 57.5 Ω
Data Output Swing 220 300 500 mVP–P
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [D] T = 294 K [C] −3 dB, 1 µA input [E] Single-ended; 100 Ω differential
Siletz™ RIP1-NJAF 200 µm, 1-GHz Photoreceiver
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
46
APD Photoreceivers Siletz™
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active Diameter 75 µm
Bandwidth 2.1 GHz
APD Operating Gain, M 1 5–40 50
Receiver Responsivity at M = 40
λ = 1550 nm 133kV/W
λ = 1064 nm 96
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Equivalent Power at M = 40
λ = 1550 nm 8.2nW
λ = 1064 nm 10.5
APD Dark Current at M = 1 [B] 12 23.4 40 nA
Low-Frequency Cutoff [C] 65 kHz
APD Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
TEC Power 0.8 A @ 2.2 V
TIA Power 25 mA @ 3.3 V
Thermal Load 83 mW
Output Impedance [E] 42.5 50 57.5 Ω
Data Output Swing 220 300 500 mVP–P
TIA AC Overload 2.0 mAP–P
Window Thickness 0.5–0.8 mm
Window Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [D] T = 294 K [C] −3 dB, 1 µA input [E] Single-ended; 100 Ω differential
Siletz™ RIP1-JJAF 75 µm, 2.1-GHz Photoreceiver
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
47
Siletz™ APD Photoreceivers
Siletz™ RIP1-JJQF 2.1-GHz Fiber-Coupled Photoreceiver
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
MM Fiber-Optic Connection Multimode 62.5/125, FC connector [A] µm
Bandwidth 2.1 GHz
APD Operating Gain, M 1 5–40 50
Receiver Responsivity at M = 40
λ = 1550 nm 133kV/W
λ = 1064 nm 96
Excess Noise Factor, F(M, k)
keffective [B] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Equivalent Power at M = 40
λ = 1550 nm 8.2nW
λ = 1064 nm 10.5
APD Dark Current at M = 1 [C] 12 23.4 40 nA
Low-Frequency Cutoff [D] 65 kHz
APD Breakdown Voltage, VBR [E] 70 74 80 V
ΔVBR/ΔT 29 mV/K
TEC Power 0.8 A @ 2.2 V
TIA Power 25 mA @ 3.3 V
Thermal Load 83 mW
Output Impedance [F] 42.5 50 57.5 Ω
Data Output Swing 220 300 500 mVP–P
TIA AC Overload 2.0 mAP–P
[A] Other sizes/connectors available [B] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [C] Referenced from M = 10 [D] −3 dB, 1 µA input [E] T = 294 K [F] Single-ended; 100 Ω differential
See also page 50.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
48
APD Photoreceivers Siletz™
Min Typical Max Units
Spectral Range, λ 950 1064–1550 1700 nm
Active DiameterActual 75
µmEffective 300
Bandwidth 1.5 GHz
APD Operating Gain, M 1 5–40 50
Receiver Responsivity at M = 40
λ = 1550 nm 311kV/W
λ = 1064 nm 225
Excess Noise Factor, F(M, k)
keffective [A] <0.02
M = 10 2.0
M = 20 2.3
M = 50 2.9
Noise Equivalent Power at M = 30
λ = 1550 nm 11.0nW
λ = 1064 nm 14.1
Noise Equivalent Power at M = 40
λ = 1550 nm 12.5nW
λ = 1064 nm 15.8
APD Dark Current at M = 1 [B] 12 23.4 40 nA
Low-Frequency Cutoff [C] 30 kHz
APD Breakdown Voltage, VBR [D] 70 74 80 V
ΔVBR/ΔT 29 mV/K
TIA Power 20 mA @ 3.3 V 24 mA @ 4.5 V
Thermal Load 66 108 mW
Output Impedance [E] 50 Ω
Data Output Swing 140 270 mVP–P
TIA AC Overload [F] 8 mAP–P
Lens Transparencyλ = 1550 nm 98%
λ = 1064 nm 95%
[A] i e , k fit to McIntyre’s excess noise model F(M, k) = k × M + (1 − k) × (2 − M−1) See p 63/Ref 1 [B] Referenced from M = 10 [E] Single-ended; 100 Ω differential [C] −3 dB, 1 µA input [F] At RTIA input [D] T = 294 K
Siletz™ R2P1-JCAF 75 µm, 1.5-GHz Ball-Lens-Coupled Photoreceiver
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
49
Siletz™ APD Photoreceivers
Siletz™ R2P1-JCAF
Mechanical Information
Impulse Response Spatial Response with Ball Lens
Pinout1) DOUT2) VDD3) V+ APD4) DOUT B5) GND
111
Ø 5.31
1.4
Ø 4.22 mm
±0.038
5
123
4
57°57°
82° 82°
Ø 2.54
2.55
4.705.38
BOTTOM VIEW SIDE VIEWwith cap
TOP VIEWheader only
0 5 10 15 20 25
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
−0.1
Time [ns]
Resp
onse
[V]
−400 −300 −200 −100 0 100 200 300 400
1
0.8
0.6
0.4
0.2
0
Position [µm]
Nor
mal
ized
Res
pons
e
Voxtel Catalog, rev. 03, 04/2013 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
50
APD Photoreceivers Siletz™
2.488 Gb/s
622 Mb/s
156 Mb/s
2.125 Gb/s
Bit Rate
–50 –45 –40 –35
10–1
10–2
10–3
10–4
10–5
10–6
10–7
10–8
10–9
10–10
10–11
10–12
Bit
Err
or R
ate
Optical Power [dBm]
Siletz™ RIP1-JJAF
Siletz™ RIP1-JJQF
Bit Error Rate
Bit error rate (BER) vs. input optical power for the RIP1-JJAF receiver; applies also to RIP1-JJQF. 20-MHz modulated signal, 1064 nm.
Voxtel Catalog, rev. 03, 04/2013 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
51
APD Receiver Support Electronics ModulesVoxtel’s Receiver Support Electronics Modules provide an easy way to operate our TO-8–packaged receivers without having to design and build custom optics. They can be used as optical receiver modules (ORMs) for system prototyping, or for incoming inspection, test, and characterization of APD receivers.
These modules include a 5 V AC–DC converter to provide power and grounding, and a grounding plug for additional optional grounding. The bias supplied to the receiver can be monitored through a BNC connection on the back plate, and is adjustable if necessary using a potentiometer. When the module is ordered together with a receiver, the module will be shipped with the supply voltage adjusted optimally for that receiver.
VCC +3.3 or +5V
TEC –
TEC +
APD-TIA Receiver (TO-8)
APD Receiver Support Module
RTIA Bias
APD Bias
APD Bias Monitor
APD Bias Control
5V, 3A in; GND
Out 1
GND
Out 2
TEC ControlTSense+
TSense–
+APD
Gnd
Gnd
N/C
Out+
Out–
N/C
TSense
4x Ø .089 Thru All4–40 UNC –2B Thru All
User-available holes 2x Ø .281 Thru All
2.08
9
.750 0
.750
2.08
9
1.166
1.181
4x Rubber Feet
1.1051.041
0
1.105
0 .380
.468
3.45
0
4.22
2
5.0005.500
0
.474
1.522
2.147
2.772
3.4603.847
Support Module: Functional Diagram
Support Module: Mechanical Information
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
52
APD Laser Rangefinder (LRF) ReceiversThe ROX Rx series of LRF receivers integrates Voxtel’s Deschutes VFC1 Series of InGaAs APD. The Deschutes APDs are sensitive over the 950 nm to 1700 nm spectral range and have stable avalanche gain up to M=25. To avoid the power draw, cost, and complexity of a thermoelectric cooler (TEC), the ROX Rx series of receivers uses a temperature-dependent bias compensation scheme where gain is slightly reduced at high temperatures to mitigate the deleterious effects of APD dark current, and gain is allowed to increase at low temperatures.
The Voxtel ROX ASIC performs signal amplification, conditioning, pulse detection, pulse generation and dif-ferential output. A user-supplied VCMOS1 bias (+1.8 VDC) powers the ASIC. The ROX ASIC includes a two-stage resistive transimpedance amplifier (TIA) with a 100 MHz bandwidth. The ASIC is designed to convert the cur-rent output of the APD into an amplified voltage signal that can be detected by the pulse detection circuits.
Typical LRF Receiver
Functional Diagram: APD LRF ReceiversThe ROX Rx series of LRF receivers includes six primary components: (1) Voxtel’s Deschutes™ NIR APD, (2) a custom-designed ROX™ amplification and pulse processing ASIC, (3) a bias supply and conditioning circuit, (4) a microcontroller and (5) an EEPROM; all are mounted on a circuit board integrated in (6) a hermetic TO-8 package.
Block Diagram
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53
Mechanical Information: APD LRF ReceiversThe ROX Rx series of receiver cap consists of a fused silica flat window (Schott D273T) with a wideband NIR anti-reflection coating on both sides. Inside the package, the APD is mounted directly onto the ASIC, minimiz-ing capacitance and improving reliability. The TO-8 package has 12-pins, which include: six user-required inputs, a differential signal output pair, two optional LRFR monitor points (bias and buffered signal), and two pins for factory calibration and servicing.
TO-8 Package
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
54
ROX™ Rx Series LRF Receivers Deschutes BSI™
RVC1-JIAC 100 MHz ROX Rx Series Receiver w/ 75-μm Deschutes BSI™ R-APD
in a TO-8 Package
Parameter Min Typical Max Units
Spectral Response, λ 950 1535 1700 nm
Optically Active Diameter 75 μm
Bandwidth 100 MHz
Low Frequency Cutoff 100 300 kHz
APD Operating Gain, M 1 5 - 20 25
Pulse Pair Resolution 70 100 ns
Linear Dynamic Range 25 dB
Total Dynamic Range 70 dB
Comparator Threshold Level (VCOMP) 0 0.48 - 0.78 1.8 V
Optional Comparator Decay Time (VHI to VCOMP)
3 μs
Operational Performance
Small Signal Responsivity1 890 89001 71200 kV/W
Temporal Resolution1,2,3,4 206 ps RMS
Noise Equivalent Power1,2,4 0.2 0.3 0.5 nW
Signal Sensitivity1,4,5 0.8 1.2 2.0 nW
Maximum Instantaneous Optical Power4 6 MW/cm2
Power Requirements
Low Voltage Current Draw Threshold Level
1.8 V APD supply 20 mA
5 V APD supply 10 mA
High Voltage Current Draw Threshold Level < 63 V APD supply 5 mA
Environmental
Operational Temperature Range -40 80 °C
1 Assumes 2-ns pulse width
2 M =10 gain
3 20-nW signal
4 1535-nm spectral response
5 0.1% false alarm rate
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
55
Deschutes BSI™ ROX™ Rx Series LRF Receivers
RVC1-NIAC 100 MHz ROX Rx Series Receiver w/ 200-μm Deschutes BSI™ R-APD
in a TO-8 Package
Parameter Min Typical Max Units
Spectral Response, λ 950 1535 1700 nm
Optically Active Diameter 200 μm
Bandwidth 100 MHz
Low Frequency Cutoff 100 300 kHz
APD Operating Gain, M 1 10 25
Pulse Pair Resolution 70 100 ns
Linear Dynamic Range 25 dB
Total Dynamic Range 70 dB
Comparator Threshold Level (VCOMP) 0 0.48 - 0.78 1.8 V
Optional Comparator Decay Time (VHI to VCOMP)
3 μs
1 2-ns pulse width
2 M =10 gain
3 20-nW signal
4 1535-nm spectral response
5 0.1% false alarm rate
Operational Performance
Small Signal Responsivity1 890 89001 71200 kV/W
Temporal Resolution1,2,3,4 206 ps RMS
Noise Equivalent Power1,2,4 0.3 0.5 1.0 nW
Signal Sensitivity1,4,5 1.2 2.0 4.0 nW
Maximum Instantaneous Optical Power4 6 MW/cm2
Power Requirements
Low Voltage Current Draw Threshold Level
1.8 V APD supply 20 mA
5 V APD supply 10 mA
High Voltage current Draw Threshold Level
< 63 V APD supply
5 mA
Environmental
Operational Temperature Range -40 80 °C
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
56
APD Laser Rangefinders (LRFs)Voxtel’s Deschutes VFC1 Series of InGaAs APDs enable low-power high-performance ranging in our eye-safe micro-miniature laser rangefinders (µLRFs), including:
• ROX OEM Series: A compact eye-safe uLRF module for original equipment manufacturers.
• ROX uLRF Series: A compact eye-safe uLRF delivering the highest performance in its class
.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
57
Deschutes BSI™ ROX™ OEM Series LRF Modules
• Survey and 3D Building Rendering
• Mapping & Altimetry
• Sports & Recreation
• Police & Paramilitary
Applications
ROX™ OEM Series−Compact, High Performance uLRF Modules for OEMs
Safely enabling acquisition of the most detailed, timely, and ac-curate data—at the lowest size, weight, power and cost
The compact ROX OEM series μLRF module is a low-cost easy-to-integrate, easy-to-operate micro-laser rangefinder (μLRF) module custom-designed for original equipment manufacturers (OEMs) of compact ranging systems for commercial, industrial and military applications.
• Eye-safe Laser: Many ranging devices use near-infrared lasers or LEDs that are not eye-safe at the power levels required to generate sufficient return pulses from long-range targets, under all weather conditions. Our custom-developed compact monolithic, passively Q-switched, eye-safe 1535-nm laser—with 100-µJ 2-ns FWHM laser pulses of near diffraction-limited beam quality at 40 kW of peak power—allows the ROX OEM series µLRF, with a 25-mm optic, to image up to 7.5 km in single-pulse mode and over 10 km when multiple pulses accumulate. A diffraction-limited laser beam with the highest power in its weight-price class, provides class-leading range and accuracy.
• Industry-leading Performance with Reduced Size, Weight, Power and Cost: Measuring precisely at long range previously required inefficient laser sources with large collection optics, resulting in large, heavy ranging systems—too large for most consumer and size-sensitive commercial applications. By tightly coupling our proprietary laser and high-performance APD photoreceiver with our control and processing electronics, Voxtel makes possible a new class of ultra-miniature rangefinders that can be embedded in a wide variety of products. With the Class-1M laser and low-noise APD photoreceiver, tightly integrated with programmable functionality, the μLRF achieves noise equivalent power (NEP) of 0.5 nW, with linear dynamic range of 25 dB and total dynamic range of 70 db, while maintaining excellent damage threshold levels of 6 MW/cm2. The compact cost-effective design—which eliminates the need for power-hungry thermoelectric coolers—allows for smaller, more affordable active systems.
• Flexible Operation: The photoreceiver has programmable modes to stabilize gain over a wide temperature range, to optimize ranging performance over the full temperature range, and to implement other user-programmable or factory-configured functions. Range-programmable threshold and gain features allow maintained sensitivity over a large range and optimized false alarm rates (FARs) for a wide variety of operating scenarios.
• Eye-safe: Class-1M, 1535-nm laser transmitter
• Unsurpassed Sensitivity: < 0.5 nW NEP
• Long Range: 7.5 km single-shot with 25-mm receive optics
• Simple: Serial interface with programmable control over threshold and gain
• High Precision: 150-mm accuracy single-shot variance
• High Beam Quality: Diffraction-limited beam, M2 < 1.2
• Excellent Repetition Rate: Up to 10-Hz single-shot repetition rate
• Low Power Consumption: 800 mW while ranging
• Long Lifetime: > 100 million shots
• Robust: Qualified to guns and other extreme environments
• Lightweight: 32 grams
• Option: Up to 1-mm hemispheric lens on APD
Features
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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ROX™ OEM Series LRF Modules Deschutes BSI™
Min Typical Max Conditions
Transmitter
Wavelength 1535 nm
Pulse Energy 85 μJ 100 μJ 150 μJ
Pulse Width 2 ns FWHM
Peak Power 40 kW
Pulse Repetition Frequency 1 Hz 10 Hz
Beam Diameter 0.7 mm
Beam Divergence 4.2 mrad
Beam Quality (M2) 1 1.1 1.2
Receiver
Diameter 200 µm
Noise Equivalent Power 500 pW
Ranging Performance
Timing Resolution 60 ps
Range Precision 150 mm single pulseRange Distance 10 m 10 m - 7.5 km 25-mm receive optics, clear
conditions, single pulse, FAR = 60 Hz (0.1%)
Electrical
Power Consumption 800 mW 1.7 W 10-Hz repetition rate
Mechanical
Weight 32 g
Environmental
Operating Temperature -40oC to +60oC
Shock 1500 g, 0.5 ms
Vibration 20 – 2000 Hz, 20 g
Lifetime > 100 million shots mean time to failure (MTTF)
Specifications: Model EVKI-NABC
Class I Invisible Laser Radiaon Present
Avoid long-term viewing of laser.
CAUTION
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Deschutes BSI™ ROX™ OEM Series LRF Modules
37.1
48.3
Component Dimensions: Model EVKI-NABCR e c e i v e r
S y s t e m B o a r d
T r a n s m i t t e r
27.6
8.6(radius)
[0.3
94
]1
0
[1.080]
27.4
[0.536]13.613
[0.5
74
]1
4.5
75
[0.144]3.660
mounting screws 2X 2mm SHCS
[0.3
15
]8
[0
.21
1]
5.3
50
beam exit
[0.3
54
]9
[0.1
97
]5
[0.0
00
]0
[0.1
97
]5
[0.3
54
]9
[0.1
58
]4
.02
0
[mm]
inches
[mm]
inches
[mm]
inches
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
60
ROX™ OEM Series LRF Modules Deschutes BSI™
Class I Invisible Laser Radiaon Present
Avoid long-term viewing of laser.
CAUTION
Electrical Specifications: Model EVKI-NABC
Connector Pin Description
J9 5, 9, 11, 13, 15, 17, 19, 21, 23, 25 DC Ground
J9 10, 12 1.8 V DC
J9 18, 20 3.3 V DC
J9 22, 24, 26 5 V DC
J12 3 Transmit
J12 5 Receive
J12 9 DC Ground
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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Deschutes BSI™ ROX™ µLRF Series
• Hunting and Sporting
• Survey
• Mapping and Altimetry
• Robotics and Autonomous Navigation
• UAV-Mounted Ranging and Surveillance
• Police and Paramilitary Surveillance
Applications
ROX™ µLRF Series−Eye-Safe Micro-Laser Range-finders
• Eye-safe: Class-1M, 1535-nm laser transmitter
• Long Range: 3 km
• Hih Precision: 100-mm accuracy single-shot variance
• High Beam Quality: Diffraction-limited beam, M2 < 1.2
• Unsurpassed Sensitivity: < 0.5 nW NEP
• High Repetition Rate: Up to 10-Hz single-shot
• Long-life Battery: > 200 thousand shots with rechargeable LIPO
• Long Lifetime: > 100 million shots
• Robust: Qualified to IP65
Features
Delivering the highest performance in its class
The ROX µLRF series of micro-laser rangefinder (µLRF) is a new class of high-performance, eye-safe laser rangefinder in an extremely compact, lightweight package.
Designed for use by high-performance consumer, commercial and industrial system integrators, the ROX µLRF, combines low-divergence diffraction-limited laser pulses with Voxtel’s state-of-the-art APD receiver to achieve the most sensitive, highest performing rangefinder in its size and weight class.
The ROX µLRF includes:
• ROX Rx, a highly sensitive InGaAs APD receiver (Rx).
• ROX Tx, a small-form-factor eye-safe diode-pumped solid-state laser transmitter (Tx) operating at 1535 nm, with a beam expander that provides 0.5 mrad of laser divergence with near diffraction-limited beam quality.
• Visible boresight aiming laser operating at 650 nm.
• Custom pulse-processing and time-to-digital circuits.
• Micro-USB serial interface compatible with bluetooth converters.
The waterproof ROX µLRF series delivers reliable ranging of targets under direct sunlight, at night and in low visibility conditions, including fog, rain and snow. Communication is performed over the bluetooth-compatible micro-USB connector. The ROX µLRF series comes factory-configued with a variety of operating modes and is easily user-programmed. It is designed for flexible integration with user systems.
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
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ROX™ Rx Series LRF Receivers ROX™ µLRF Series
General
Eye Safety Class 1M
Measurement Range1 3 km
Minimum Range 10 m
Range Accuracy 100 mm
Range Resolution 50 mm
Multiple Target Detection 5 returns per shot with 10-m separation
Measurement Rate 10 Hz
LRF Transmitter
Laser Type DPSS
Operating Wavelength 1535 nm
Beam Divergence 0.5 mrad
Transmitter Optic Diameter 12 mm
Pulse Energy 100 µJ
Pulse Width (FWHM) 2 ns
Laser Classification 1M (EN 60825-1: 2007)
Lifetime > 100 million shots
LRF Ceceiver
Detector Type InGaAs APD
Receiver Optic Diameter 15 mm1 2.3-m x 2.3-m target, albedo 0.3, visibility 10 km
Boresight Aiming Laser
Operating Wavelength 650 nm
Power 5 mW
Eye Safety Class IIIa
Range: Day / Night 30 m / 450 m
Electrical
Data Interface
• RS232 3.3 V TTL Level
• Bluetooth v21.1 (optional)
Power Supply 3.3 V to 12 V (LIPO)
Power Consumption
• Standby 80 mW
• Max Mea- sure Rate 1.7 W
Mechanical
Weight 145 g
Dimensions (LxWxH, mm) 75 x 50 x 20
Environmental
Operating Temperature -40 to 60 oC
Storage Temperature -45 to 80 oC
Waterproof IP65
Specifications: Model FVKE-NCBC
Dimensions:
Class I Invisible Laser Radiaon Present
Avoid long-term viewing of laser.
CAUTION
Voxtel Catalog, rev. 06, 8/2015 © Voxtel makes no warranty or representation regarding its products’ specif ic application suitability and may make changes to the products described without notice.
63
[1] R. J. McIntyre, “Multiplication Noise in Uniform Avalanche Diodes,” IEEE Transactions on Electron Devices 13(1), 164–168 (1966).
[A] G. M. Williams, “GHz-Rate Single-Photon-Sensitive Linear-Mode APD Receivers,” Proceedings of SPIE 7222, 72221L (2009).
[B] G. M. Williams, M. A. Compton, and A. S. Huntington, “High-Speed Photon Counting with Linear-Mode APD Receivers,” Proceedings of SPIE 7320, 732012 (2009).
References
Single-Photon Counting: Voxtel Publications
References
©Voxtel, Inc 2015
Voxtel, Inc.
15985 NW Schendel Ave., #200
Beaverton, OR 97006
www.voxtel-inc.com
T: (971) 223-5646 F: (503) 296-2862