MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 235 Phase Formation and Modification by Beam-Solid Interactions Symposium held Decmber 2-6, 1991, Boston, Massachusetts, U.S.A. EDITORS: Gary S. Was University of Michigan, Ann Arbor, Michigan, U.S.A. Lynn E. Rehn Argonne National Laboratory, Argonne, Illinois, U.S.A. David M. Follstaedt Sandia National Laboratories, Albuquerque, New Mexico, U.S.A. llVrlT? 1^1 MATERIALS RESEARCH SOCIETY |1V1|1\|D| Pittsburgh, Pennsylvania
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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 235
Phase Formation and Modification byBeam-Solid Interactions
Symposium held Decmber 2-6, 1991, Boston, Massachusetts, U.S.A.
EDITORS:
Gary S. Was
University of Michigan, Ann Arbor, Michigan, U.S.A.
Lynn E. Rehn
Argonne National Laboratory, Argonne, Illinois, U.S.A.
David M. Follstaedt
Sandia National Laboratories, Albuquerque, New Mexico, U.S.A.
llVrlT? 1^1 MATERIALS RESEARCH SOCIETY
|1V1|1\|D| Pittsburgh, Pennsylvania
Contents
PREFACE xvii
ACKNOWLEDGMENTS xix
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS xx
PART I: AMORPHOUS SILICON
RADIATION-ENHANCED PLASTIC FLOW OF COVALENT MATERIALSDURING ION IRRADIATION 3
C.A. Volkert and A. Polman
PICOSECOND PHOTOCARRIER LIFETIMES IN ION-IRRADIATEDAMORPHOUS AND CRYSTALLINE SILICON 15
P.A. Stolk, L. Calcagnile, S. Roorda, H.B. van Linden van den Heuvell,and F.W. Saris
DYNAMICS OF CHANGE IN ELECTRICAL CONDUCTIVITY OF IONIRRADIATED AMORPHOUS SILICON 21
Jung H. Shin, J.S. Im, and H.A. Atwater
ENERGETIC ELECTRON BEAM INDUCED RECRYSTALLIZATIONOF ION IMPLANTATION DAMAGE IN SEMICONDUCTORS 27
M.W. Bench, I.M. Robertson, and M.A. Kirk
STUDY OF AMORPHIZATION PROCESS IN SILICON IRRADIATED
BY DIFFERENT IONS USING IN SITU STRESS-MEASUREMENTAND TEM TECHNIQUES 33
Jianzhong Yuan, Igor V. Verner, Sergei K. Maksimov, andJames W. Corbett
VACANCY-TYPE AND ELECTRICAL DEFECTS IN AMORPHOUSSILICON PROBED BY POSITRONS AND ELECTRONS 39
S. Roorda, R.A. Hakvoort, A. van Veen, P.A. Stolk, and F.W. Saris
A NEW METHOD FOR MEASURING ION IMPLANTATION AMORPHOUSDOSE IN SITU 45
Jianzhong Yuan, Igor V. Verner, and James W. Corbett
PHOTOLUMINESCENCE OF ERBIUM IN AMORPHOUS SILICON:
STRUCTURAL RELAXATION AND OPTICAL DOPING 51J.S. Custer, E. Snoeks, and A. Polman
SOLID PHASE EPITAXIAL REGROWTH OF IMPLANTATION AMORPHIZED
Si0 7Ge„ 3GROWN ON (100) SILICON 57
C. Lee and K.S. Jones
NON-LINEAR AND TIME-DEPENDENT DIFFUSION OF GOLD INAMORPHOUS SILICON 65
A.V. Wagner, D.T. Wu, and F. Spaepen
IN-SITU TEM OBSERVATION OF DEFECTS AND AMORPHOUS PHASE
CHARACTERIZATION OF ION IRRADIATED ZIRCONIA-YTTRIA FILMS 357
N.K. Huang, Z.R. Feng, Z.K. Xiong, D.Z. Wang, and P.L. Wang
DISTRIBUTION AND CHARACTERIZATION OF IRON IN IMPLANTEDSILICON CARBIDE 363
J. Bentley, L.J. Romana, L.L. Horton, and C.J. McHargue
MeV SELF ION BEAM INDUCED AMORPHISATION OF SILICONCARBIDE SURFACES AND ITS EFFECT ON THEIR TRIBOMECHANICALPROPERTIES 369
D.K. Sood, V.C. Nath, and Yang Xi
ERBIUM-DEFECT INTERACTIONS IN SILICA FILMS IMPLANTEDWITH MeV Er IONS 377
A. Polman, D.C. Jacobson, and J.M. Poate
OPTICAL AND INFRARED SPECTROSCOPY OF LASER IRRADIATED
Bi IMPLANTED Si02 GLASSES 383
R.H. Magruder, III, D.O. Henderson, S.H. Morgan, and R.A. Zuhr
FORMATION OF Au COLLOID PARTICLES IN SILICA GLASS BY IONIMPLANTATION 389
K. Fukumi, A. Chayahara, M. Adachi, K. Kadono, T. Sakaguchi,M. Miya, Y. Horino, N. Kitamura, J. Hayakawa, H. Yamashita,K. Fujii, and M. Satou
DYNAMIC REDISTRIBUTION OF EXCESS CHARGE DURING
PHOTOEMISSION IN AN ELECTRON BOMBARDED GLASS-CERAMIC 395
D.L. Carroll, D.L. Doering, and B.S Blais
THE ROLE OF BALLISTIC, ELECTRONIC, AND THERMAL PROCESSESIN ELECTRON IRRADIATION DAMAGE OF MAXIMUM VALENCETRANSITION METAL OXIDE SURFACES 401
M.I. Buckett and L.D. Marks
COLLISIONAL ENERGY DEPOSITION THRESHOLD FOR EXTENDED
DAMAGE DEPTHS IN ION-IMPLANTED SILICATES 407
G.W. Arnold, G. Battaglin, A. Boscolo-Boscoletto, F. Caccavalle,G. De Marchi, and P. Mazzoldi
PLASTIC DEFORMATION AND MICRO-FRACTURE IN SiO, INDUCED
BY ELECTRON BEAM IRRADIATION 413
P.M. Ajayan and Sumio Iijima
ANNEALING OF Pb-IMPLANTED SrTiO, IN THE PRESENCE OF WATERVAPOUR: A STUDY USING D2180 LABELLING 419
J.C. McCallum, T.W. Simpson, I.V. Mitchell, J. Rankin,and L.A. Boatner
EXAMINATION OF ION BEAM-TARGET ANGLE EFFECTS BY OPTICAL
SPECTROSCOPIC PROFILING 425
J.D. Klein and A. Yen
ix
PULSED LASER ANNEALING OF BURIED DAMAGE IN ION IMPLANTEDDIAMOND 431
Steven Prawer, D.N. Jamieson, S.P. Dooley, P. Spizzirri,K.P. Ghiggino, and R. Kalish
THE BEHAVIOR OF INTERSTITIALS IN IRRADIATED GRAPHITE 437
D.F. Pedraza
HARDENING IN A1N INDUCED BY POINT DEFECTS 445
H. Suematsu, T.E. Mitchell, T. Iseki, and T. Yano
PART VI: IRRADIATION OF METALS/INTERMETALLICS
*IN SITU TRANSMISSION ELECTRON MICROSCOPE STUDIES OF ION
IRRADIATION-INDUCED AND IRRADIATION-ENHANCED PHASE CHANGES 451Charles W. Allen
IRRADIATION DAMAGE IN Zr3Fe 461
L.M. Howe, M.H. Rainville, and D. Phillips
STABILITY OF URANIUM SILICIDES DURING HIGH ENERGYION IRRADIATION 467
R.C. Birtcher and L.M. Wang
ROLE OF CHROMIUM IN HIGH-DOSE, HIGH-RATE, ELEVATED
TEMPERATURE NITROGEN IMPLANTATION OF AUSTENITICSTAINLESS STEELS 473
D.L. Williamson, I. Ivanov, R. Wei, and P.J. Wilbur
PHASE TRANSFORMATIONS BY YTTRIUM IMPLANTATION INTO
PURE ALUMINUM 479
X.G. Ning, C.Z. Ji, and H.Q. Ye
SMALL LEAD AND INDIUM INCLUSIONS IN ALUMINIUM 485E. Johnson, K. Hjemsted, B. Schmidt, K.K. Bourdelle, A. Johansen,H.H. Andersen, and L. Sarholt-Kristensen
IMPLANTATION OF NITROGEN INTO Ti/Al, Ni/Ti, AND Ni/AlBILAYERS 491
D.O. Boerma and T. Corts
RBS/CHANNELING DIFFUSION STUDIES OF HIGH ENERGY AuIMPLANTED Mg SINGLE CRYSTALS 497
R.C. da Silva, M.F. da Silva, L. Thom6, A.A. Melo, and J.C. Soares
ANALYSIS OF EXPERIMENTS IN HELIUM MICROBEAM MIXING 503John B. Davis, R.E. Benenson, and David Peak
MOSSBAUER STUDY OF THE ROLE OF ALUMINUM AND CHROMIUM
IN NITROGEN IMPLANTED IRON 509M. Kopcewicz, J. Jagielski, A. Turos, and D.L. Williamson
METASTABLE PHASE FORMATION IN THE Y-Ti SYSTEM BY ION MIXING 515S.L. Lai, Z.J. Zhang, J.R. Ding, and B.X. Liu
Al-Yb AMORPHOUS ALLOYS PRODUCED BY ION MIXING ORSOLID STATE REACTION 521
B.X. Liu, J.R. Ding, D.Z. Che, and H.B. Zhang
Invited Paper
x
RADIATION ENHANCED TRACER DIFFUSION IN INTERMETALLICALLOYS 527
Y.S. Lee, R.S. Averback, and CP. Flynn
MOLECULAR DYNAMICS SIMULATIONS OF LOW ENERGYDISPLACEMENT CASCADES IN THE ORDERED COMPOUND CuTi 533
H. Zhu, N.Q. Lam, R. Devanathan, and M.J. Sabochick
MOLECULAR DYNAMICS SIMULATION OF ELECTRON IRRADIATION-INDUCED AMORPHIZATION OF THE ORDERED COMPOUND NiZr 539
R. Devanathan, N.Q. Lam, M.J. Sabochick, P.R. Okamoto, and M. Meshii
THE EFFECT OF ION IRRADIATION ON INERT GAS BUBBLE MOBILITY 545Dale E. Alexander and R.C. Birtcher
STRUCTURE TRANSFORMATIONS OF THE DECAGONAL ANDICOSAHEDRAL PHASES IN QUATERNARY ALLOYS 551
R. Perez, J. Reyes-Gasga, and M. Jose-Yacaman
INTERDIFFUSION AND GRAIN-BOUNDARY MIGRATION INAu/Cu BILAYERS DURING ION-IRRADIATION 559
Dale E. Alexander, L.E. Rehn, and Peter M. Baldo
THE EFFECT OF THERMAL SPIKE ON THE ION IRRADIATION INDUCEDGRAIN GROWTH 565
TEM STUDY OF FLUX PINNING DEFECTS IN YBa2Cu307H5PRODUCED BY 580 MeV Sn ION IRRADIATION 683
R. Wheeler, M.A. Kirk, R. Brown, A.D. Marwick, L. Civale, andF.H. Holtzberg
IRRADIATION EFFECT OF SLOW NEUTRONS ON MECHANICAL
BEHAVIOUR RELATED TO FLUX PINNING IN YBaXuoO,, 689
J.S. Zhu, J. Li, Y.N. Wang, J.R. Jin, M. Gu, S.Y. Ding, X. Jin,P.C.W. Fung, and Z.M. Liu
ENHANCEMENT OF PINNING ENERGY AND CRITICAL CURRENT DENSITYIN T^CaBajCujOg FILMS BY PROTON IRRADIATION 695
M.E. Reeves, B.D. Weaver, G.P. Summers, R.J. Soulen, Jr.,W.L. Olson, M.M. Eddy, T.W. James, and E.J. Smith
*Invited Paper
xii
ORIENTATION DEPENDENCE OF FLUX PINNING IN A LAYERED
Bi2Sr2Ca!Cu208 + 10% Ag COMPOSITE 701
Maria Foldeaki and Hassel Ledbetter
NANOSCALE Y,03 PHASE DISPERSION IN YBajCihO, _THIN
FILMS PRODUCED BY PLASMA-ENHANCED METALORGANIC
CHEMICAL VAPOR DEPOSITION 707
P. Lu, J. Zhao, C.S. Chern, Y.Q. Li, G.A. Kulesha, B. Gallois,P. Norris, B. Kear, and F. Cosandey
PART IX: ION-ASSISTED AND PLASMA DEPOSITION
STRESS AND PHASE CHANGES IN ION-ASSISTED EVAPORATION OF THIN
TANTALUM FILMS 715
R.A. Roy and Philip Catania
ION BEAM ASSISTED DEPOSITION OF CUBIC BORON NITRIDE
THIN FILMS 721
Daniel J. Kester and Russell Messier
COPPER-CARBON ALLOY FILMS BY METHANE BEAM ASSISTEDEPITAXIAL COPPER DEPOSITION 729
David W. Brown, Edward P. Donovan, Catherine M. Cotell, and
Kenneth S. Grabowski
INFLUENCE OF ENERGY DEPOSITED BY ENERGETIC PARTICLE
BOMBARDMENT ON THIN FILM CHARACTERISTICS 735
Harold F. Winters, W. Eckstein, and H.J. Coufal
SIMULATIONS OF LOW-ENERGY ION BOMBARDMENT AND EPITAXIAL
GROWTH 743
E. Chason, P. Bedrossian, J.Y. Tsao, B.W. Dodson, and S.T. Picraux
*EPITAXY AND CHEMICAL REACTIONS DURING THIN FILM
FORMATION FROM LOW ENERGY IONS: NEW KINETIC PATHWAYS,NEW PHASES AND NEW PROPERTIES 749
Nicole Herbots, O.C. Hellman, and O. Vancauwenberghe
IN SITU OBSERVATION OF GROWING PROCESS OF PARTICLES
IN SILANE PLASMAS AND THEIR EFFECTS ON AMORPHOUS
SILICON DEPOSITION 763
Masaharu Shiratani and Yukio Watanabe
ATOMIC OXYGEN PLASMA EFFECTS ON CVD DEPOSITED
DIAMOND-LIKE CARBON FILMS 769
Jeffrey S. Hale, R.A. Synowicki, S. Nafis, and John A. Woollam
HYDROGEN IN DIELECTRIC FILM FORMATION FROM AN
ELECTRON CYCLOTRON RESONANCE PLASMA 775
J.C. Barbour and H.J. Stein
LOW TEMPERATURE SILICON OXIDATION WITH ELECTRON
CYCLOTRON RESONANCE OXYGEN PLASMA 781
K.T. Sung and S.W. Pang
LOW ENERGY ION BEAM MODIFICATION OF HIGH PERFORMANCE
POLYMER 787
Hyo-Soo Jeong and R.C. White
*Invited Paper
xiii
LOW-ENERGY Ar+ IMPLANTATION OF UHMW-PE FIBERS: EFFECT ON
SURFACE ENERGY, CHEMISTRY, AND ADHESION CHARACTERISTICS
R. Schalek, M. Hlavacek, and D.S. Grummon
Si-N BONDING AT THE Si02/Si INTERFACES DURINGDEPOSITION OF Si02 BY THE REMOTE PECVD PROCESS
Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky
LOW TEMPERATURE SILICON EPITAXIAL GROWTH BY PLASMA
ENHANCED CHEMICAL VAPOR DEPOSITION FROM SiH4/He/H2Yung-Jen Lin, Ming-Deng Shieh, Chiapying Lee, and Tn-Rung Yew
GROWTH AND HIGH RESOLUTION TEM CHARACTERIZATION OF
GexSi, X/Si HETERO-STRUCTURES BY REMOTE PLASMA-ENHANCED
CHEMICAL VAPOR DEPOSITIONR. Qian, I. Chung, D. Kinosky, T. Hsu, J. Irby, A. Mahajan,S. Thomas, S. Banerjee, A. Tasch, L. Rabenberg, C. Grove,and C. Magee
PART X: PULSED LASER DEPOSITION
CHARACTERIZATION OF THE DEPOSITING FLUX IN LASER ABLATION
DEPOSITION (LAD)Jacques C.S. Kools and Jan Dieleman
DYNAMICS OF GRAPHITE PHOTOABLATION
P.T. Murray, D.T. Peeler, and D.V. Dempsey
GROWTH MECHANISM AND FILM PROPERTIES IN PULSED
LASER-PLASMA DEPOSITIONS. Metev and K. Meteva
IN-SITU ELLIPSOMETRY STUDY OF PULSED LASER DEPOSITED
ZnO FILMS
Shakil Pittal, L.A. McConville, N.J. Ianno, and P.G. Snyder
EFFECTS OF PROCESSING PARAMETERS ON KrF EXCIMER LASER
ABLATION DEPOSITED Zr02 FILMS
Gary A. Smith, Li-Chyong Chen, and Mei-Chen Chuang
SYNTHESIS AND CHARACTERIZATION OF PbO FILMS GROWN BY
PULSED LASER DEPOSITION
J.S. Zabinski, M.S. Donley, V.J. Dyhouse, R. Moore, and
N.T. McDevitt
PROCESSING OF Y.BaXujO, _
SUPERCONDUCTING THIN FILMS ON
GaAs SUBSTRATES WFTH DOUBLE BUFFER LAYERS
Sang Yeol Lee, Quanxi Jia, Wayne A. Anderson, and David T. Shaw
CHARACTERIZATION OF HIGH TEMPERATURE SUPERCONDUCTINGTHIN FILM GROWN BY LASER ABLATION METHOD
K. Shimizu, H. Nobumasa, N. Nagai, T. Matsunobe, and T. Kawai
IN SITU CHARACTERIZATION OF THE PULSED LASER DEPOSITION