Phase Change Technology in optical and electrical memory applications. Giuliano Marcolini Bologna 28-05-2012
Feb 16, 2016
Phase Change Technology
inoptical and electrical memory
applications.
Giuliano MarcoliniBologna 28-05-2012
Classification of memories
• Data type– Analogic memories– Digital memories
• Data retention– Volatile memories– Non-volatile memories
• Data access– Sequental access memories– Random access memories
Classification of memories
Analogic
Memories
Classification of memories
Digital
Analogic
Memoriesvolatile SRAM, DRAM
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
ROM,PROM,E(E)PROM
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
ROM,PROM,E(E)PROM
Memory Card, SSD
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
ROM,PROM,E(E)PROM
Magnetic disk
Memory Card, SSD
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
ROM,PROM,E(E)PROM
Memory Card, SSD
Magnetic disk
Optical memory
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
ROM,PROM,E(E)PROM
Memory Card, SSD
Magnetic disk
Optical memory
Optical storage:CD-rom
Optical storage:CD-rom
Phase change materials:
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Phase change materials:
Tmelt
Tglass
TroomTime [sec]
T [K]
Optical storage:CD-RW
Optical storage:DVD &Blu Ray
CD vs DVD vs Blu-ray Writing
400 nm 700 nm
CD vs DVD vs Blu-ray Writing
400 nm 700 nm
CD vs DVD vs Blu-ray Writing
400 nm 700 nm
Blu-Ray vs HD-DVD
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
ROM,PROM,E(E)PROM
Memory Card, SSD
Magnetic disk
Optical memory
Falsh Memory
Phase Change Memories
PCM
Phase Change Memories
R [Ω]
≈ 109 Ω
≈ 105 Ω
Phase Change Memories:memory cell
Top electrode
Phase Change Materials
Resistor(heater)
Bottom electrode
Phase Change Memories:memory cell
I [A]
time
Amorphous
Cristalline
Phase Change Memories:cross-point array
Phase Change Memories
Classification of memories
Digital
Analogic
Memoriesvolatile
Non-volatile
SRAM, DRAM
Magnetic disk
Optical memory
Falsh Memory
PCM
Brief overview:Static and Dynamic RAM
SRAM DRAM
Flash memory cell: Floating gate transistor
Vg
Vs Vd
Brief overview:Flash memory cell
Vg
Vs Vd
PCM vs Flash
• Electric charge • Physical phases
• Write time ≈ 10 µs • Write time ≈ 0.1 µs
• Endurance ≈ 5000 cycle p.s. • Endurance ≈ 107 cycle
• Retention ≈ 50,10,5,2 yr • Retention ≈ 300 yr (at 85°)
• Low radiation res. • High radiation res.
PCMFlash
Questions ?
Thank you and
goodbye !