Performance Status of EUV Resist;euvlsymposium.lbl.gov/pdf/2009/poster/P029_Koh_SEMATECH.pdf · Resist at PPT for M1/CNT, etc Resist at PPT for Active, etc 27nm HP, 15mJ/cm2, LWR
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Performance Status of EUV Resist;24nm HP CNT at MET, and 27nm HP PWA at ADT1
Chawon Koh*, Jacque Georger, Liping Ren, Frank Goodwin, Stefan Wurm, Dominic Ashworth, and Warren Montgomery (SEMATECH)Joo-on Park (Samsung Electronics),Bill Pierson (ASML), Patrick Naulleau (LBNL)
17 October 2009 2EUVL Symposium 2009
Outline
• Strategic Approach for EUV resist readiness
• Progress and current status of EUV resists
• Key technical gasps for 22nm HP patterning
• Sub 30nm HP contact hole results at MET
• Process window at 27nm HP patterning at ADT1
• LWR Improvement with underlayer and rinse material
• Summary
• Acknowledgement
17 October 2009 3EUVL Symposium 2009
Strategic Approach for EUV Resist Readiness
• Black : Moderate performanceRequired timing for EUV resist readiness in case of pilot line and HVM.
• Green : Good performance
*R L S
R L S
R L S
Resist at PPT for M1/CNT, etc
Resist at PPT for Active, etc27nm HP, 15mJ/cm2, LWR 4nm
27nm HP, 7.5mJ/cm2, LWR 5.5nm for M1, etc27nm HP, 15mJ/cm2 for contact hole
2009 2010 2011 2012 2013
Resist for HVM 22nm HP, 10.0mJ/cm2, LWR 1.4nm
• We need a strategic approach to meet resist requirements for pilot linewhen considering RLS trade-off: Develop two kinds of resists.
• LWR Improvement by rinse material, and pattern transfer
17 October 2009 4EUVL Symposium 2009
Sub 30nm Patterning Fidelity of EUV Resists22nm HP 24nm HP 26nm HP 20nm HP28nm HP
1) LBNL MET, 0.3 NA, Rotated dipole, 2) Average of 1:1 30 nm, 32 nm, 34 nm, and 36 nm HP features3) LBNL / 2.0, 4) 50 nm resist thickness, A/R without resist collapse*) The number in brackets gives LWR for DRAM hp with 8% spec.
• 2.9nm LWR (34%) improvement was demonstrated with using a spin-on underlayer and rinse material.
17 October 2009 14EUVL Symposium 2009
Summary
• Resist suppliers focus on resist development for pilot line usage requiring high sensitivity, and optimization of resist performance at fullfield ADT1. - No improvement in champion resolution at MET - Little improvement in LWR - Good progress in sensitivity
• Resolution of 24nm 1:1 dense contact hole were demonstrated with PHS based CAR. Contact CD non-uniformity need to be improved for sub 30nm HP
• Resist collapse, LWR, defect, and pattern transfer with sub 40nm resist pattern height need to be improved for 22nm HP patterning.
• Demonstrated measurable process window at 27nm HP patterning. (DOF; ~70nm @ Best Dose, EL; 8% @ Best Focus)
• 2.9nm(34%) LWR Improvement was achieved using a spin-on undrlayer and rinse material.
17 October 2009 15EUVL Symposium 2009
Acknowledgement
• Dongjin ; Jung-Youl Lee, Jaehyun Kim • Dow ; Su Jin Kang, James W Thackeray• Fujifilm ; Katsuhiro Yamashita, Shinji Tarutani• JSR ; Yoshi Hishiro, Shalini Sharma• Shinetsu ; Jun Hatakeyama, Yoshio Kawai• Sumitomo ; Nobuo Ando, Yuko Yamashita• TOK ; Rick Uchida, Taku Hirayama
• AMD ; Tom Wallow, Bruno La Fontaine• ASML ; Kevin Cummings• CNSE ; Corbet Johnson, Brian N Martinick, Martin Rodgers• IBM ; Karen Petrillo• Intel ; Ernisse Steve Putna• Lawrence Berkeley National Laboratory ; Gideon Jones,
Brian Hoef, Paul Denham, Jerrin Chiu • Samsung Electronics ; Subramanya Mayya• SEMATECH ; Cecilia Montgomery, Dave Amedure, Khurshid Anwar