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PBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240X. 1.2 Features and benefits Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency due to less heat generation 1.3 Applications DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CEO collector-emitter voltage open base - - -40 V I C collector current - - -2 A I CM peak collector current - - -3 A R CEsat collector-emitter saturation resistance I C = -1 A; I B = -100 mA; pulsed; t p ≤ 300 µs; δ ≤ 0.02 ; T amb = 25 °C - - 310 I CRM repetitive peak collector current t p ≤ 20 ms; δ ≤ 0.33 ; pulsed - - -2.5 A
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PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

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Page 1: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor19 October 2012 Product data sheet

1. Product profile

1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:PBSS4240X.

1.2 Features and benefits• Low collector-emitter saturation voltage VCEsat• High collector current capability IC and ICM• High efficiency due to less heat generation

1.3 Applications• DC-to-DC conversion• Supply line switching• Battery charger• LCD backlighting• Driver in low supply voltage applications (e.g. lamps and LEDs)• Inductive load driver (e.g. relays, buzzers and motors)

1.4 Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit

VCEO collector-emittervoltage

open base - - -40 V

IC collector current - - -2 A

ICM peak collector current - - -3 A

RCEsat collector-emittersaturation resistance

IC = -1 A; IB = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - 310 mΩ

ICRM repetitive peakcollector current

tp ≤ 20 ms; δ ≤ 0.33 ; pulsed - - -2.5 A

Page 2: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 2 / 12

2. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol

1 E emitter

2 C collector

3 B base3 2 1

SOT89sym132

E

C

B

3. Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

PBSS5240X SOT89 plastic surface-mounted package; die pad for good heat transfer;3 leads

SOT89

4. MarkingTable 4. Marking codesType number Marking code

PBSS5240X S48

5. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - -40 V

VCEO collector-emitter voltage open base - -40 V

VEBO emitter-base voltage open collector - -5 V

IC collector current - -2 A

ICRM repetitive peak collector current δ ≤ 0.33 ; tp ≤ 20 ms; pulsed - -2.5 A

ICM peak collector current - -3 A

IB base current - -300 mA

IBM peak base current - -1 A

[1] - 0.5 WPtot total power dissipation

[2] - 0.95 W

Page 3: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 3 / 12

Symbol Parameter Conditions Min Max Unit

[3] - 1.35 W

Tj junction temperature - 150 °C

Tamb ambient temperature -65 150 °C

Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

Tamb (°C)-75 17512525 75-25

006aac675

0.5

1.0

1.5

Ptot(W)

0.0

(1)

(2)

(3)

(1) FR4 PCB, mounting pad for collector 6 cm2

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig. 1. Power derating curves

6. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit

[1] - - 250 K/W

[2] - - 132 K/W

Rth(j-a) thermal resistancefrom junction toambient

in free air

[3] - - 93 K/W

Rth(j-sp) thermal resistancefrom junction to solderpoint

- - 16 K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

Page 4: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 4 / 12

006aac680

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.01

0.020.05

0.10.2

0.330.5

0.75

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values006aac681

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.01

0.020.05

0.10.2

0.330.5

0.75

FR4 PCB, mounting pad for collector 1 cm2

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

Page 5: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 5 / 12

006aac682

10

1

102

103

Zth(j-a)(K/W)

10- 110- 5 1010- 210- 4 10210- 1

tp (s)10- 3 1031

0

duty cycle = 1

0.01

0.05

0.10.2

0.330.5

0.75

0.02

FR4 PCB, mounting pad for collector 6 cm2

Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

7. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

VCB = -40 V; IE = 0 A; Tamb = 25 °C - - -100 nAICBO collector-base cut-offcurrent VCB = -40 V; IE = 0 A; Tj = 150 °C - - -50 µA

ICEO collector-emitter cut-offcurrent

VCE = -30 V; IB = 0 A; Tamb = 25 °C - - -100 nA

IEBO emitter-base cut-offcurrent

VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA

VCE = -5 V; IC = -1 mA; Tamb = 25 °C 300 - -

VCE = -5 V; IC = -500 mA; Tamb = 25 °C 215 - -

VCE = -5 V; IC = -1 A; Tamb = 25 °C 145 - -

hFE DC current gain

VCE = -5 V; IC = -2 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

55 - -

IC = -100 mA; IB = -5 mA; Tamb = 25 °C - - -140 mV

IC = -500 mA; IB = -50 mA;Tamb = 25 °C

- - -170 mV

IC = -1 A; IB = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -310 mV

VCEsat collector-emittersaturation voltage

IC = -2 A; IB = -200 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -630 mV

RCEsat collector-emittersaturation resistance

IC = -1 A; IB = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - 310 mΩ

Page 6: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 6 / 12

Symbol Parameter Conditions Min Typ Max Unit

VBEsat base-emitter saturationvoltage

IC = -1 A; IB = -100 mA; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -1.2 V

VBEon base-emitter turn-onvoltage

VCE = -5 V; IC = -1 A; pulsed;tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C

- - -1.1 V

fT transition frequency VCE = -10 V; IC = -50 mA; f = 100 MHz;Tamb = 25 °C

150 - - MHz

Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A;f = 1 MHz; Tamb = 25 °C

- - 12 pF

006aaa794

400

200

600

800

hFE

0

IC (mA)- 1 - 104- 103- 10 - 102

(1)

(2)

(3)

VCE = -5 V(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 5. DC current gain as a function of collectorcurrent; typical values

VCE (V)0 - 5- 4- 2 - 3- 1

006aaa799

- 0.8

- 1.6

- 2.4

IC(A)

0

IB (mA) = - 24- 21.6- 19.2- 16.8- 14.4

- 9.6- 7.2

- 4.8

- 2.4

- 12

Tamb = 25 °C

Fig. 6. Collector current as a function of collector-emitter voltage; typical values

Page 7: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 7 / 12

006aaa795

- 0.6

- 0.4

- 0.8

- 1.0

VBE(V)

- 0.2

IC (mA)- 10- 1 - 104- 103- 1 - 102- 10

(1)

(2)

(3)

VCE = -5 V(1) Tamb = −55 °C(2) Tamb = 25 °C(3) Tamb = 100 °C

Fig. 7. Base-emitter voltage as a function of collectorcurrent; typical values

006aaa798

- 0.6

- 0.8

- 0.4

- 1.0

- 1.2VBEsat

(V)

- 0.2

IC (mA)- 10- 1 - 104- 103- 1 - 102- 10

(1)

(2)

(3)

IC/IB = 20(1) Tamb = -55 °C(2) Tamb = 25 °C(3) Tamb = 150 °C

Fig. 8. Base-emitter saturation voltage as a function ofcollector current; typical values

006aaa796

IC (mA)- 10- 1 - 104- 103- 1 - 102- 10

- 10- 1

- 1

VCEsat(V)

- 10- 2

(1)(2)(3)

IC/IB = 20(1) Tamb = 100 °C(2) Tamb = 25 °C(3) Tamb = −55 °C

Fig. 9. Collector-emitter saturation voltage as a function of collector current; typical values

Page 8: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 8 / 12

8. Package outline

06-08-29Dimensions in mm

4.64.41.81.4

1.61.4

1.20.8

31.5

0.480.35

0.440.23

0.530.40

2.62.4 4.25

3.75

1 2 3

Fig. 10. Package outline SOT89

9. Soldering

solder lands

solder resist

occupied area

solder paste

sot089_fr

1.21.9

2

2.25

4.75

1(3×)

0.7(3×)

0.6(3×)

1.1(2×)

1.2

0.85 0.2

0.5

1.7

4.85

3.95

4.6

1.51.5

Dimensions in mm

Fig. 11. Reflow soldering footprint for SOT89

Page 9: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 9 / 12

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot089_fw

0.7

5.3

6.6

2.4

3.5

0.5

1.8(2×)

1.5(2×)

7.6

1.9 1.9

Dimensions in mm

Fig. 12. Wave soldering footprint for SOT89

10. Revision historyTable 8. Revision historyData sheet ID Release date Data sheet status Change notice Supersedes

PBSS5240X v.1 20121019 Product data sheet - -

Page 10: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 10 / 12

11. Legal information

11.1 Data sheet statusDocumentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1] Please consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.

11.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

11.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, Nexperia does not giveany representations or warranties, expressed or implied, as to the accuracyor completeness of such information and shall have no liability for theconsequences of use of such information. Nexperia takes noresponsibility for the content in this document if provided by an informationsource outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.

Notwithstanding any damages that customer might incur for any reasonwhatsoever, Nexperia’s aggregate and cumulative liability towardscustomer for the products described herein shall be limited in accordancewith the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.

Suitability for use — Nexperia products are not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.

Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.

Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or the

Page 11: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 11 / 12

grant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expresslystates that this specific Nexperia product is automotive qualified,the product is not suitable for automotive use. It is neither qualified nortested in accordance with automotive testing or application requirements.Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without Nexperia’s warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondNexperia’s specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies Nexperia for anyliability, damages or failed product claims resulting from customer design anduse of the product for automotive applications beyond Nexperia’sstandard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

11.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.

Page 12: PBSS5240X - NexperiaPBSS5240X 40 V, 2 A PNP low VCEsat (BISS) transistor 19 October 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In

© Nexperia B.V. 2017. All rights reserved

Nexperia PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor

PBSS5240X All information provided in this document is subject to legal disclaimers.

Product data sheet 19 October 2012 12 / 12

12. Contents1 Product profile ....................................................... 11.1 General description .............................................. 11.2 Features and benefits ...........................................11.3 Applications .......................................................... 11.4 Quick reference data ............................................ 12 Pinning information ...............................................23 Ordering information .............................................24 Marking ................................................................... 25 Limiting values .......................................................26 Thermal characteristics .........................................37 Characteristics .......................................................58 Package outline ..................................................... 89 Soldering ................................................................ 810 Revision history .....................................................911 Legal information .................................................1011.1 Data sheet status ............................................... 1011.2 Definitions ...........................................................1011.3 Disclaimers .........................................................1011.4 Trademarks ........................................................ 11

© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 19 October 2012