ISSN 1738-3935 New & Renewable Energy 2017. 9 Vol. 13, No. 3 https://doi.org/10.7849/ksnre.2017.9.13.3.004 [2017-9-PV-001] 선택적 캐리어 수집을 위한 터널 산화막을 이용한 결정질 실리콘 태양전지 한상욱 1) ㆍ심경배 1) ㆍ박수영 1) ㆍ안시현 1) ㆍ박철민 2) ㆍ조영현 1) ㆍ김현후 3) ㆍ이준신 1)* A Study on Crystalline Silicon Solar Cells Using Tunnel Oxide Layer for Carrier Selective Contacts Sanguk Han 1) ㆍGyungbae Shim 1) ㆍSooyoung Park 1) ㆍShihyun Ahn 1) ㆍCheolmin Park 2) ㆍ Hyunhoo Kim 3) ㆍYounghyun Cho 1) ㆍJunsin Yi 1)* Received 25 May 2017 Revised 19 September 2017 Accepted 20 September 2017 ABSTRACT In silicon solar cells, the doping process is performed to form a Back Surface Field (BSF) layer and is followed by many other processes. In this study, phosphorus doped a-Si:H doped at a high concentration in the tunnel oxide layer was crystallized through furnace annealing and Excimer Laser Annealing (ELA), in order to apply it to the Polycrystalline (Poly) - BSF layer in the Tunnel Oxide Passivated Contact (TOPCon) structure. In the excimer laser annealing fabrication process, an XeCl excimer laser with a wavelength of 308 nm was used, and the thickness of the a-Si layer and energy density of the laser were varied from 20 to 40 nm and from 390 to 450 mJ/cm 2 , respectively. The highest carrier lifetime and implied VOC were found to be 588 ㎲ and 697 mV, respectively, at an a-Si thickness of 20 nm and energy density of the laser of 450 mJ/cm 2 . The TOPCon cell was fabricated using wet oxidation and plasma oxidation. Its efficiency and FF were found to be higher when fabricated using the wet process, with values of 19.41% and 74.8%, respectively, while its VOC and JSC values were higher when it was fabricated using plasma oxidation, with values of 41.04 mJ/cm 2 and 644 mV, respectively. Therefore, if the conditions providing for a high implied VOC and carrier lifetime and sufficient crystallization were found, the efficiency of n-type TOPCon solar cells could be increased. Key words BSF(후면전계층), ELA(엑시머레이저어닐링), Crystallization(결정화), TOPCon(전하선택적수집), Crystalline silicon solar cell(실리콘태양전지) 1) College of Information and Communication Engineering, Sungkyunkwan University 2) Department of Energy Science, Sungkyunkwan University 3) Department of Display Engineering, Doowon Technical University *Corresponding author: [email protected]Tel: +82-31-290-6571 Fax: +82-31-290-6570 Copyright ⓒ2017 by the New & Renewable Energy This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited. 1. 서 론 화석 연료 (석유 , 석탄 및 천연가스 )는 현재 세계 에너지 생산의 80% 이상을 차지하는 주요 에너지원이다 [1] . 하지만 화석 연료는 지구 온난화와 기후 변화의 주요 원인인 온실 가스의 배출로 인해 공급이 제한되고 환경에 매우 유해하 다 . 그러므로 미래에는 환경에 유해하지 않으면서 화석 연 료를 대체할 수 있는 에너지 개발이 필수적이다 [2] . 태양광 에너지는 환경에 유해한 영향이 없이 태양빛을 전기로 변환 하기 때문에 주요한 대체 에너지로 성장하고 있다 [3] . 고효 율의 실리콘 태양전지를 제작하기 위해서는 조사된 빛에 의 해 생성된 Electron-Hole Pair(EHP) 의 재결합손실을 최소 화 하는 것이 필수적이다 . 25% 의 효율을 달성한 Passivated Emitter, Rear Locally diffused(PERL) 태양전지는 열 산화공정을 이용하여 전후면 passivation 을 상승시키고 선
This document is posted to help you gain knowledge. Please leave a comment to let me know what you think about it! Share it to your friends and learn new things together.
Transcript
ISSN 1738-3935
New & Renewable Energy 2017. 9 Vol. 13, No. 3 https://doi.org/10.7849/ksnre.2017.9.13.3.004
[2017-9-PV-001]
선택적 캐리어 수집을 위한 터널 산화막을
이용한 결정질 실리콘 태양전지
한상욱1)ㆍ심경배
1)ㆍ박수영
1)ㆍ안시현
1)ㆍ박철민
2)ㆍ조영현
1)ㆍ김현후
3)ㆍ이준신
1)*
A Study on Crystalline Silicon Solar Cells Using Tunnel Oxide Layer for Carrier Selective ContactsSanguk Han
1)ㆍGyungbae Shim
1)ㆍSooyoung Park
1)ㆍShihyun Ahn
1)ㆍCheolmin Park
2)ㆍ
Hyunhoo Kim3)ㆍYounghyun Cho
1)ㆍJunsin Yi
1)*
Received 25 May 2017 Revised 19 September 2017 Accepted 20 September 2017
ABSTRACT In silicon solar cells, the doping process is performed to form a Back Surface Field (BSF) layer and is followed by many
other processes. In this study, phosphorus doped a-Si:H doped at a high concentration in the tunnel oxide layer was crystallized
through furnace annealing and Excimer Laser Annealing (ELA), in order to apply it to the Polycrystalline (Poly) - BSF layer in the
Tunnel Oxide Passivated Contact (TOPCon) structure. In the excimer laser annealing fabrication process, an XeCl excimer laser with
a wavelength of 308 nm was used, and the thickness of the a-Si layer and energy density of the laser were varied from 20 to 40 nm and
from 390 to 450 mJ/cm2, respectively. The highest carrier lifetime and implied VOC were found to be 588 ㎲ and 697 mV, respectively,
at an a-Si thickness of 20 nm and energy density of the laser of 450 mJ/cm2. The TOPCon cell was fabricated using wet oxidation and
plasma oxidation. Its efficiency and FF were found to be higher when fabricated using the wet process, with values of 19.41% and
74.8%, respectively, while its VOC and JSC values were higher when it was fabricated using plasma oxidation, with values of 41.04
mJ/cm2 and 644 mV, respectively. Therefore, if the conditions providing for a high implied VOC and carrier lifetime and sufficient
crystallization were found, the efficiency of n-type TOPCon solar cells could be increased.
Key words BSF(후면전계층), ELA(엑시머레이저어닐링), Crystallization(결정화), TOPCon(전하선택적수집), Crystalline silicon
solar cell(실리콘태양전지)
1) College of Information and Communication Engineering,
Sungkyunkwan University
2) Department of Energy Science, Sungkyunkwan University
3) Department of Display Engineering, Doowon Technical University
This is an Open Access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0)
which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.