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Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion
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Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Dec 20, 2015

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Page 1: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Organic Optoelectronics

Nir Tessler

EE Dept. Microelectronic Center & Nanoelectronic Center

Technion

Page 2: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

The material:

Organic semiconductors = molecular materials

small molecules to long polymer chains.

Length scale: Typical layer thickness – 50-100nm Inter chain distance ~ 0.5nm

Semiconducting Organic Polymers

Soluble Optoelectronic materials

Page 3: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

New Functional Materials New/Improved Devices

Chemically madeQuantum Dots

Semiconducting-polymer devices

Chemical SynthesisOf semiconductingMolecules/polymers

BiologyGenetic engineering

Uri Banin Nir Tessler Yoav Eichen Gad Schuster

New Methods for

Material Assembly

Molecular SizeDevices

Libraries & precisionIn Polymersynthesis

Macro- Devices

New Functionalities“plastic” emitting at

1.3-1.5m

Nano Science and Technology Interdisciplinary Collaboration

Chem. Dept Chem. Dept Biology DeptEE Dept

Page 4: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

New Functionalities

Polymers emit visible light only! But optical communication elements operate with near infrared light can’t use polymers?

OK – Lets mix

ZnSe

0.99

1.26

CdSe

InAs

Shell

0.46

V

Eg

0.92

5 nm

U. Banin, Hebrew University,Jerusalem

Functional

Page 5: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Glass

Ca\Al (cathode)

PEDOT/ITO (Anode)

nMeO

O

nMeO

O

Polymer

nanocrystal

V-

+

Current/Energy is first injected into the polymer

Energy/ChargeTransfer to the nanocrystal

Light Emission

What do we hope to achieve by mixing

Page 6: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Composite Emission in the NIR(>20V%NC)

1000 1200 1400 1600 1800

Lum

ines

cenc

e (

a.u

.)

Wavelength (nm)

Size A Size B Size C~1% electroluminescence external efficiency.

N. Tessler et. al., Science, 2002

Page 7: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Tessler et. al.,Science, 2002

Plastics for telecomm

The potential Impact

Page 8: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

We are not yet capable to accurately predict the optoelectronic properties associated with a given chemical structure

A Known Solution:Make many structures (libraries)Screen and cross correlate properties structure

A TIP:In biology, Peptide synthesis, is a fully developed automatic method.

Libraries

Page 9: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Libraries of -Conjugated Polymersfrom Fiction to Science?

Page 10: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

S

O

O

S

SO2NNH

O

O

NH

S

O

O

NH

SO2N

O

Trimer

Dimer

SNO

O H

H

fmoc

(4)

Solid State Peptide SynthesisFirst Attempt

S. Tal, Y. Eichen

will the material remain a semiconductor when such unit is used as a linker?

Page 11: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Peptide synthesis valid for conjugated molecules/polymers

Gate voltage dependence

5 10-10

1 10-9

1.5 10-9

2 10-9

2.5 10-9

3 10-9

3.5 10-9

-30 -20 -10 0 10 20 30

I D (

A)

VGS

(V)

VDS

=10

ID IS

VG

Peptide

SiO2

Au Au

Au

Field Effect Transistor

=0VG > 0

Page 12: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

What Do we (in EE) contribute to this

material/chemistry dominated field?

• Investigate the internal processes.

• Learn how the material property affect the device performance.

• Know how to extract the material properties as manifested in a working device.

• Provide feedback to materials/chemistry

Page 13: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Level 1

• The material is made of discrete molecules.• Charge is hopping between sites that are

distributed in space and energy.

Charge Transport

Monte-Carlo Simulation

Gaussian Density of States(width )

E

Y. Bar

Page 14: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.
Page 15: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

What do we extract from it?

• Can we apply statistics to describe the motion.

• Can we use Fermi-Dirac Statistics?

• Can we define a quasi-equilibrium?

Can we use the notion of: mobility () diffusivity (D)

If yes we can use/create device models

Page 16: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Assume:1. Yes, we can use D and 2. Energy distribution of sites- Gaussian

What value/function (E,n) should we use in a device model?

Page 17: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Ratio Between D and (Einstein relation)

The semiconductor is degenerate for (almost) every practical density

Built-in charge density dependence of the transport phenomena

LED device

FET device

0

2

4

6

8

10

12

14

10 10 10 10 10 1015 16 17 18 19 20

Charge Density (cm-3)

Ein

stei

n R

elat

ion

(q

/kT

)

=10 kT

=5 kT=3 kT

Y. Roichman

Page 18: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Use the Physical picture to study A very practical problem

HOMO Level(Valence “band”)

LUMO Level(Conduction)

Metal

Energy

E

Standard text book Model :

kT

E

e

Page 19: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Contact region Bulk region

x

Hot carriers thermalization

Cold carriers thermalization

Carriers diffusion at potential

Organic LED transport in the presence of energy disorder

B

Device Model of a contact region

3-10nm

Y. Preezant

Page 20: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

The contact as simulated within a DEVICE model

Introducing the effect of the Einstein Relation Only

=4kT

=2kT

<<kT

Using text book analysis:

1. E is temperature dependent

2. Contact phenomena is unpredictable

1012

1013

1014

1015

1016

1017

1018

1019

1020

0 20 40 60 80 100

Ca

rrie

rs c

on

cen

tra

tio

n [

cm

-3]

Distance From Metalic Contact [nm]

Using the NEW model:

1. Good Agreement between Theory and Experiment

2. Contact phenomena is predictable

(As was shown on the poster)

Page 21: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

The contact phenomena(Through 2D modeling of Field Effect Transistor)

polymer

Cha

rge

Den

sity

(10

18cm

-3)

Insulator

Length (m)

Depth (m)

Drain Source

S’D’

t=t

D’ S’

Page 22: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Cha

rge

Den

sity

(10

18cm

-3)

Length (m)

Depth (m)

polymer Insulator

Drain

Source

Channel Charge at steady state VS = 0VVD = -3VVG = -5V

D’S’

Track the charges, Potential drops (associated with the structure), ….

Know how to translate Device performance to Material Performance

Close the loop with the Material/Chemistry part

Page 23: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Chemistry/Materials

Device Modeling

Device Design & measure

Analysis and extraction ofproperties

New Functionalities Novel Materials

Page 24: Organic Optoelectronics Nir Tessler EE Dept. Microelectronic Center & Nanoelectronic Center Technion.

Thanks To

Yoav EichenShay Tal

Uri BaninMiri KazesShi-hi Kan

Vlad MedvedevYevgeni PreezantYhoram BarYohai RoichmanNoam RapaportOlga SolomeshchAlexey RazinYair GanotSagi Shaked

Avecia Chemicals

Israel Science Foundation

European Union FW-6$