2009 International Symposium on Extreme Ultraviolet Lithography 1 Seite Optics for EUV lithography Peter Kuerz, Thure Boehm, Udo Dinger, Hans- Juergen Mann, Stephan Muellender, Manfred Dahl, Martin Lowisch, Michael Muehlbeyer, Oliver Natt, Siegfried Rennon, Wolfgang Seitz, Franz-Josef Stickel, Erik Sohmen, Thomas Stein, Gero Wittich, Christoph Zaczek, Bernhard Kneer, Ralf Arnold, Winfried Kaiser, Wolfgang Rupp 2009 International Symposium on EUV Technology 2009 International Symposium on Extreme Ultraviolet Lithography
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Optics for EUV lithography - Semantic Scholar€¦ · Symposium on Extreme Ultraviolet Lithography TWINSCAN EUV Product Roadmap 2006 NXE:3100 Resolution = 27 nm NA = 0.25, σ= 0.8
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2009 International Symposium on Extreme Ultraviolet Lithography 1Seite
Optics forEUV lithography
Peter Kuerz, Thure Boehm, Udo Dinger, Hans-Juergen Mann, Stephan Muellender, Manfred Dahl, Martin Lowisch, Michael Muehlbeyer, Oliver Natt, Siegfried Rennon, Wolfgang Seitz, Franz-Josef Stickel, Erik Sohmen, Thomas Stein, Gero Wittich, Christoph Zaczek, Bernhard Kneer, Ralf Arnold, Winfried Kaiser, Wolfgang Rupp
2009 International Symposium on EUV Technology
2009 International Symposium on Extreme Ultraviolet Lithography
Page 22009 International Symposium on Extreme Ultraviolet Lithography
Overview
EUV enters the production phase
» Setup of an EUV infrastructure complete» Progress in key technology areas
- Optics metrology and fabrication- Coatings- System metrology
» Production of first systems accomplished
The future: high NA EUV tools enable resolutions down to 11 nm
Page 32009 International Symposium on Extreme Ultraviolet Lithography
EUV Production Tools – Introduction
Reticle-stage
Wafer stage
Source-ModuleDesign Example
Intermediate focus
illuminator
Projection optics
Collector
Technical challenges:Optics fabricationCoating of EUV mirrorsEUV system metrology
Slide 4 |2009 International Symposium on Extreme Ultraviolet Lithography
Main improvements1) New EUV platform :NXE 2) Improved low flare optics 3) New high σ illuminator4) New high power LPP source5) Dual stages
Main improvements1) New high NA 6 mirror lens2) New high efficiency illuminator3) Off-Axis illumination option4) Source power increase5) Reduced footprint
Main development phase started
Main improvements1) New EUV platform :NXE 2) Improved low flare optics 3) New high σ illuminator4) New high power LPP source5) Dual stages
Main improvements1) New high NA 6 mirror lens2) New high efficiency illuminator3) Off-Axis illumination option4) Source power increase5) Reduced footprint
Shipped
J. Stoeldraijer et al.: this conferenceS. Lok et al: this conference
Page 52009 International Symposium on Extreme Ultraviolet Lithography
First 3100 illuminators shipped
Uniformity
Ellipticity
Telecentricity
Transmission
EUV qualification
Page 62009 International Symposium on Extreme Ultraviolet Lithography
Computer ControlledPolishing for Deterministic Processes