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Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492 and A. Núñez , M. Abolfath and A. H. MacDonald Department of Physics, University of Texas at Austin
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Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Dec 21, 2015

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Page 1: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier,

Department of Applied Physics, University of Alicante (SPAIN)

CECAM June 2003, Lyon (FR)

cond-mat/0304492

andA. Núñez , M. Abolfath and A. H. MacDonald

Department of Physics, University of Texas at Austin

Page 2: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

•Optical control of magnetization dynamics •Optical injection of electrons and holes in GaAs:Mnwith spin perpendicular to magnetization•Spin transfer in GaAs:Mn

Main Ideas

Page 3: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Current Induced Magnetization

Switching (CIMS)

E.B. Myers et al.,Science 285, 867 (1999).

Current

Magnetization dynamics under electrical spin injection

Co Cu Co

Page 4: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Oiwa et al., PRL 88, 137203 (2001)

Magnetization dynamics under c.w. optical spin injection

GaAs(Ga,Mn)As GaAs

Light Induced Magnetization tilt (LIMT)

Page 5: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Questions•Effect of non-equilibrium quasiparticles on magnetization dynamics?

•SPIN TRANSFER (Slonczewski)

•Spin transfer explains CIMS

•Does spin transfer explain LIMT?

No, low carrier fluency in cw

•Optical Spin transfer with laser pulses?

Page 6: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

)( HM

Hdt

d

s

Magnetization Dynamics:

Damping

][E

H

Spin orbit + shape + applied field

Effective field

))((

ntPM s

B

Spin transfer

Quasiparticle spin orientation

Page 7: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Spin Transfer

n

Initiallyn

Recombination orSpin decoherence

The transfer !!

))((

ntPMdt

d

s

B

ST

Photo-carriers/(time volume)

Page 8: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Abolfath, et al. PRB (2001)

Band structure depends on direction of impurity-spin polarization

001

100 110

Anisotropy energy

E [m

eV/n

m3 ]

0.000

0.005

0.010

0.015

001 100 110 001

Effective Field, magnetic anisotropy

][E

H

x=0.055; strain=-0.29%

Page 9: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Time scales:•Electron precession: 0.1 ps•Recombination: 2-20 ps•Electron Spin decoherence: 5-20 ps•Laser pulse duration: 2-20 ps•Ferromagnetic resonance: 60 ps

Optical Spin transfer with laser pulses

Page 10: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Results 1

Energy per pulse: 0.1 mJ/cm2

tL: 3 ps; tR= 2ps, p= n= 1.2 1018 cm3

Weak pumping: ‘FMR’

z

x

z

xz

x

Page 11: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

My,Mz

Mx

Energy per pulse: 4.0 mJ/cm2

tL: 3 ps; tR= 2ps, p= n= 5 1019 cm3

z

x

Strong pumping: Switching

z

x

z

x

Page 12: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Spin relaxation time

K K+Q

SPIN WAVE EMISSION

Page 13: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Take Home Message

Optical Spin transfer allows Laser Control of magnetization in

ferromagnetic (III,Mn)-V

E-mail:[email protected]: www.ua.es/personal/jfrossier

Page 14: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Coherent vs Incoherent Rotation

Page 15: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.
Page 17: Optical spin transfer in GaAs:Mn Joaquin Fernandez-Rossier, Department of Applied Physics, University of Alicante (SPAIN) CECAM June 2003, Lyon (FR) cond-mat/0304492.

Magnetization dynamics under spin injection

1) Current Induced Magnetization Switching in metals

Electrical Spin injectionCIMS E.B. Myers et

al.,Science 285, 867 (1999).

Oiwa et al., PRL 88, 137203 (2001)GaAs:Mn

2) Light Induced Magnetization tilt in GaAs:Mn

GaAs Optical Spin injectionLIMT