Opracowanie technologii cienkich warstw ZnO i optymalizacja parametrów elektrycznych do złącz Schottky’ego ZnO/metal ElŜbieta Guziewicz, Marek Godlewski T. Krajewski, Ł. Wachnicki, G. Łuka, K. Kopalko, M. Łukasiewicz, E. Łusakowska, E. Przeździecka, I. Kowalik, W. Paszkowicz, P. Kruszewski, P. DłuŜewski Institute of Physics Polish Academy of Sciences NANOBIOM 3 luty 2009
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Opracowanie technologii cienkich
warstw ZnO i optymalizacja
parametrów elektrycznych do złącz
Schottky’ego ZnO/metal
ElŜbieta Guziewicz, Marek GodlewskiT. Krajewski, Ł. Wachnicki, G. Łuka, K. Kopalko,
M. Łukasiewicz, E. Łusakowska, E. Przeździecka, I. Kowalik, W. Paszkowicz, P. Kruszewski, P. DłuŜewski
Institute of PhysicsPolish Academy of Sciences
NANOBIOM 3 luty 2009
Outline
� Atomic Layer Deposition
� ALD laboratory at IF PAN
� ZnO by ALD (precursors, growth rate, structural properties)
� Electrical properties of ZnO-ALD
� Summary
NANOBIOM 3 luty 2009
Atomic Layer Deposition
NANOBIOM 3 luty 2009
� ALD guarantees flat, uniform and reproducible thickness, low stress, uniform stoichiometry and low defect density.
� Besides the industrial silicon platforms, ALD has proven essential to create gate dielectrics on device substrates without native oxides, such as high mobilityGaAs/AlGaAs heterostructures, organic transistors, nanotubes and many more. Examples of materials include HfO2, ZrO2, Al2O3, LaAlO, GdScO3, their nanolaminates, and others.
Intel has recently announced that their 45 nm generation processors will include a high-k HfO 2 gate dielectric made by ALD .
ALD laboratory at IFPAN
NANOBIOM 3 luty 2009
F-120, Microchemistry, FinlandSavannah-100Cambridge NanoTech, USA
ZnO: TMZnO: REII-VI (ZnSe, ZnS,CdS)
ZnOAl2O3HfO2
Zinc precursors:DMZnzinc acetate
Zinc precursor:DEZn
ALD laboratory at IFPAN
NANOBIOM 3 luty 2009
Sputtering system Kurt Lesker Co.
Hall effect (RT & LN)
Interferometer(thickness measurement)
Spectrofluorimeter (RT PL)
Access to:
• Nomarski microscope
• X-ray diffractometer
• AFM microscope
•SEM microscope
ZnO grown by ALD
NANOBIOM 3 luty 2009
� Atomic Layer Deposition
� ALD laboratory at IF PAN
� ZnO by ALD (precursors, growth rate, structural properties)