22 Bd Benoni Goullin 44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected]www.systemplus.fr OPPO’s GaN - based and silicon - based SuperVOOC in - box fast chargers Competitive analysis of Power Integrations’ GaN and silicon technology used in OPPO’s high power chargers. SP20547 - POWER report by Taha AYARI Physical Analysis by Peggy Gallois February 2020– Sample REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
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OPPO’s GaN-based and silicon-based SuperVOOC in …...Physical and Technological Comparison Cost comparison GaN component impact Feedback 123 System Plus Consulting Services 125
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OPPO’s GaN-based and silicon-based SuperVOOC in-box fast chargersCompetitive analysis of Power Integrations’ GaN and silicon technology usedin OPPO’s high power chargers.
SP20547 - POWER report by Taha AYARIPhysical Analysis by Peggy Gallois
February 2020– Sample
REVERSE COSTING® – STRUCTURAL, PROCESS & COST REPORT
In order to further develop its fast charging technology, OPPO has featured the Reno Ace smartphone with a GaN-based 65 W SuperVOOC2.0 charger. The OEM claims that its new fast charger has the ability to fully charge a 4000mAh battery in just 30 minutes. To support suchhigh power and speed while keeping sufficient cost-competitiveness, the charger is featured by a GaN-based device from Power Integrations(PI) which is one of the main power device’s providers for the wall-charger market. It appears that the move from the Si technology to theGaN technology is crucial to deliver power as high as 65 W.
In this report, System Plus Consulting presents a deep analysis of two inbox fast chargers from OPPO. The 65 W GaN-based charger thatcomes with the Reno Ace and the 50 W Si-based charger featured in the Rx17 pro. A technical and cost comparison is provided betweenthese two chargers and Anker PowerPort PD1 30 W charger which also uses a power device from PI. The impact of the GaN component ishighlighted through the comparison.
This report provides a detailed bill of material and manufacturing analysis for the OPPO’s chargers. Moreover, it presents the supply chainand the technical choices. The report gives a detailed physical analysis of the PI’s power devices and the fast charging ICs used in eachcharger.
The report also estimates the production cost of all the components of each charger, including the printed circuit boards, integrated circuitsand packages, in detail. It includes exhaustive technology and cost comparisons of materials, package assembly, power devices and theirimpact on the final manufacturing cost of the three chargers.
The reverse costing analysis is conducted in 3 phases:
Teardown analysis
• Package is analyzed and measured• The dies are extracted in order to get overall data: dimensions, main blocks, pad number and pin out, die marking• Setup of the manufacturing process.
Costing analysis
• Setup of the manufacturing environment• Cost simulation of the process steps
Selling price analysis
• Supply chain analysis• Analysis of the selling price
report “GaN-Based Wall Charger Comparison 2019”. All three chargers use power switches supplied by Power Integrations (PI). The images are not at scale
MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT
POWER ELECTRONICS & COMPOUND SEMI• Compound Semiconductor Service – Compound Research• Power GaN 2019: Epitaxy, Devices, Applications & Technology
Trends• Power Management IC: Technology, Industry and Trends 2019
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
POWER SEMICONDUCTORS & COMPOUND• GaN-on-Sapphire HEMT Power IC by Power Integrations• GaN-Based Wall Charger Comparison 2019 • Navitas 650V GaNFast Power IC Family• GaN-on-Silicon Transistor Comparison 2018• Texas Instruments’ LMG5200 GaN Power Stage• EPC2045 100V GaN-on-Silicon Transistor• Panasonic PGA26E19BA 600V GaN MOSFET• GaN Systems GS61004B GaN HEMT• Transphorm GaN-on-Silicon HEMT TPH3206PS